Method of manufacturing a DRAM cell
    4.
    发明授权
    Method of manufacturing a DRAM cell 失效
    制造DRAM单元的方法

    公开(公告)号:US5332685A

    公开(公告)日:1994-07-26

    申请号:US82276

    申请日:1993-06-24

    CPC分类号: H01L27/10852 Y10S438/907

    摘要: Disclosed is a novel DRAM manufacturing method to reduce difficulties due to the high aspect ratio of contact hole for storage electrode. The method comprises the steps of formation of a contact plug on contact areas of bit line and storage electrode at the same time and then, formation of a bit line that is in contact with the contact plug for bit line and finally, making a storage electrode that is as high as the bit line contact with the contact plug for storage electrode.

    摘要翻译: 公开了一种新颖的DRAM制造方法,用于减少由于用于存储电极的接触孔的高纵横比引起的困难。 该方法包括以下步骤:同时在位线和存储电极的接触区域上形成接触塞,然后形成与位线的接触插塞接触的位线,最后制成存储电极 与存储电极的接触插塞的位线接触一样高。