公开(公告)号：US07524475B2

公开(公告)日：2009-04-28

申请号：US11514309

申请日：2006-09-01

申请人： Seung Beom Cho ,  Jun Seok Nho ,  Dong Mok Shin ,  Jong Pil Kim ,  Myoung Hwan Oh ,  Jang Yul Kim ,  Eun Mi Choi ,  Min Jin Ko

发明人： Seung Beom Cho ,  Jun Seok Nho ,  Dong Mok Shin ,  Jong Pil Kim ,  Myoung Hwan Oh ,  Jang Yul Kim ,  Eun Mi Choi ,  Min Jin Ko

IPC分类号： B01J23/10 ,  B22F9/00 ,  B24B1/00 ,  C01F17/00 ,  C09G1/02

CPC分类号： C09K3/1463 ,  B82Y30/00 ,  C01F17/0043 ,  C01P2002/60 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2006/12 ,  C01P2006/17

摘要： A cerium oxide powder for one-component CMP slurry, which has a specific surface area of 5 m2/g or more, and a ratio of volume fraction of pores with a diameter of 3 nm or more to that of pores with a diameter less than 3 nm of 8:2˜2:8, is disclosed. A method for preparing the same, a one-component CMP slurry comprising the same as an abrasive material, and a method of shallow trench isolation using the one-component CMP slurry are also disclosed. The CMP slurry causes no precipitation of the cerium oxide powder even if it is provided as a one-component CMP slurry, because the CMP slurry uses, as an abrasive material, cerium oxide powder that is obtained via a low-temperature calcination step, optionally a pulverization step, and a high-temperature calcination step and has a high pore fraction and low strength.

摘要翻译： 具有比表面积为5m 2 / g以上的单组分CMP浆料的氧化铈粉末，直径为3nm以上的孔的体积分率与直径小于 3nm为8：2〜2：8。 还公开了一种其制备方法，包含其作为研磨材料的单组分CMP浆料，以及使用单组分CMP浆料的浅沟槽隔离方法。 由于CMP浆料使用通过低温煅烧步骤得到的氧化铈粉末，因此CMP浆料不会由于作为单组分CMP浆料而被提供，因此不会沉淀氧化铈粉末 粉碎步骤和高温煅烧步骤，并且具有高孔隙率和低强度。

公开(公告)号：US20100009539A1

公开(公告)日：2010-01-14

申请号：US12309694

申请日：2007-07-26

申请人： Myoung Hwan Oh ,  Seung Beom Cho ,  Jun Seok Nho ,  Jong Pil Kim ,  Jang Yul Kim

发明人： Myoung Hwan Oh ,  Seung Beom Cho ,  Jun Seok Nho ,  Jong Pil Kim ,  Jang Yul Kim

IPC分类号： H01L21/465 ,  C09K13/00 ,  C01F17/00

CPC分类号： H01L21/31053 ,  B24B37/044 ,  B82Y30/00 ,  C01F17/0043 ,  C01P2002/72 ,  C01P2002/76 ,  C01P2004/03 ,  C01P2004/22 ,  C01P2004/51 ,  C01P2004/62 ,  C01P2004/64 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/76229

摘要： Disclosed is cerium oxide powder for a CMP abrasive, which can improve polishing selectivity of a silicon oxide layer to a silicon nitride layer and/or within-wafer non-uniformity (WIWNU) during chemical mechanical polishing in a semiconductor fabricating process. More particularly, the cerium oxide powder is obtained by using cerium carbonate having a hexagonal crystal structure as a precursor. Also, CMP slurry comprising the cerium oxide powder as an abrasive, and a shallow trench isolation method for a semiconductor device using the CMP slurry as polishing slurry are disclosed.

摘要翻译： 公开了用于CMP研磨剂的氧化铈粉末，其可以在半导体制造工艺中的化学机械抛光期间改善氧化硅层对氮化硅层的抛光选择性和/或晶片内不均匀性（WIWNU）。 更具体地说，通过使用具有六方晶系结构的碳酸铈作为前体来获得二氧化铈粉末。 此外，公开了包含作为研磨剂的氧化铈粉末的CMP浆料和使用CMP浆料作为研磨浆料的半导体器件的浅沟槽隔离方法。

公开(公告)号：US08372303B2

公开(公告)日：2013-02-12

申请号：US12309694

申请日：2007-07-26

申请人： Myoung Hwan Oh ,  Seung Beom Cho ,  Jun Seok Nho ,  Jong Pil Kim ,  Jang Yul Kim

发明人： Myoung Hwan Oh ,  Seung Beom Cho ,  Jun Seok Nho ,  Jong Pil Kim ,  Jang Yul Kim

IPC分类号： C09K13/00 ,  C03C15/00

CPC分类号： H01L21/31053 ,  B24B37/044 ,  B82Y30/00 ,  C01F17/0043 ,  C01P2002/72 ,  C01P2002/76 ,  C01P2004/03 ,  C01P2004/22 ,  C01P2004/51 ,  C01P2004/62 ,  C01P2004/64 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/76229

摘要： Disclosed is cerium oxide powder for a CMP abrasive, which can improve polishing selectivity of a silicon oxide layer to a silicon nitride layer and/or within-wafer non-uniformity (WIWNU) during chemical mechanical polishing in a semiconductor fabricating process. More particularly, the cerium oxide powder is obtained by using cerium carbonate having a hexagonal crystal structure as a precursor. Also, CMP slurry comprising the cerium oxide powder as an abrasive, and a shallow trench isolation method for a semiconductor device using the CMP slurry as polishing slurry are disclosed.

公开(公告)号：US20100133466A1

公开(公告)日：2010-06-03

申请号：US12591227

申请日：2009-11-12

申请人： Myoung Hwan Oh ,  Jun Seok Nho ,  Jong Pil Kim ,  Jang Yul Kim ,  Seung Beom Cho

发明人： Myoung Hwan Oh ,  Jun Seok Nho ,  Jong Pil Kim ,  Jang Yul Kim ,  Seung Beom Cho

IPC分类号： C01F17/00 ,  C09K13/00 ,  C01B31/24

CPC分类号： C01F17/0043 ,  C01F17/005 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/80

摘要： Disclosed is a method for preparing cerium carbonate powder by mixing a cerium precursor solution with a carbonate precursor solution to cause precipitation, wherein at least one solvent used in the cerium precursor solution and the carbonate precursor solution is an organic solvent. Cerium carbonate powder obtained from the method, cerium oxide powder obtained from the cerium carbonate powder, a method for preparing the cerium oxide powder, and CMP slurry comprising the cerium oxide powder are also disclosed. The method for preparing cerium carbonate using an organic solvent, allows the resultant cerium carbonate powder to have a size and shape controllable from the initial nucleation step. Additionally, it is possible to easily control the size and shape of cerium oxide powder obtained from the cerium carbonate powder.

摘要翻译： 公开了一种通过将铈前体溶液与碳酸酯前体溶液混合以制备沉淀来制备碳酸铈粉末的方法，其中用于铈前体溶液和碳酸酯前体溶液中的至少一种溶剂是有机溶剂。 还公开了从该方法得到的碳酸铈粉末，由碳酸铈粉末得到的氧化铈粉末，氧化铈粉末的制备方法和含有氧化铈粉末的CMP浆料。 使用有机溶剂制备碳酸铈的方法允许所得的碳酸铈粉末具有从初始成核步骤可控的尺寸和形状。 此外，可以容易地控制由碳酸铈粉末获得的氧化铈粉末的尺寸和形状。

公开(公告)号：US08361419B2

公开(公告)日：2013-01-29

申请号：US12591227

申请日：2009-11-12

申请人： Myoung Hwan Oh ,  Jun Seok Nho ,  Jong Pil Kim ,  Jang Yul Kim ,  Seung Beom Cho

发明人： Myoung Hwan Oh ,  Jun Seok Nho ,  Jong Pil Kim ,  Jang Yul Kim ,  Seung Beom Cho

IPC分类号： C01F17/00

CPC分类号： C01F17/0043 ,  C01F17/005 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/80

摘要： Disclosed is a method for preparing cerium carbonate powder by mixing a cerium precursor solution with a carbonate precursor solution to cause precipitation, wherein at least one solvent used in the cerium precursor solution and the carbonate precursor solution is an organic solvent. Cerium carbonate powder obtained from the method, cerium oxide powder obtained from the cerium carbonate powder, a method for preparing the cerium oxide powder, and CMP slurry comprising the cerium oxide powder are also disclosed. The method for preparing cerium carbonate using an organic solvent, allows the resultant cerium carbonate powder to have a size and shape controllable from the initial nucleation step. Additionally, it is possible to easily control the size and shape of cerium oxide powder obtained from the cerium carbonate powder.

摘要翻译： 公开了一种通过将铈前体溶液与碳酸酯前体溶液混合以制备沉淀来制备碳酸铈粉末的方法，其中用于铈前体溶液和碳酸酯前体溶液中的至少一种溶剂是有机溶剂。 还公开了从该方法得到的碳酸铈粉末，由碳酸铈粉末得到的氧化铈粉末，氧化铈粉末的制备方法和含有氧化铈粉末的CMP浆料。 使用有机溶剂制备碳酸铈的方法允许所得的碳酸铈粉末具有从初始成核步骤可控的尺寸和形状。 此外，可以容易地控制由碳酸铈粉末获得的氧化铈粉末的尺寸和形状。

公开(公告)号：US07736530B2

公开(公告)日：2010-06-15

申请号：US11657051

申请日：2007-01-24

申请人： Seung Beom Cho ,  Jong Pil Kim ,  Jun Seok Nho ,  Myoung Hwan Oh ,  Jang Yul Kim

发明人： Seung Beom Cho ,  Jong Pil Kim ,  Jun Seok Nho ,  Myoung Hwan Oh ,  Jang Yul Kim

IPC分类号： C09K13/04

CPC分类号： C09G1/02 ,  H01L21/3212

摘要： Disclosed is a CMP slurry in which a compound having a weight-average molecular weight of 30-500 and containing a hydroxyl group (OH), a carboxyl group (COOH), or both, is added to a CMP slurry comprising abrasive particles and water and having a first viscosity, so that the CMP slurry is controlled to have a second viscosity 5-30% lower than the first viscosity. Also disclosed is a method for polishing a semiconductor wafer using the CMP slurry. According to the disclosed invention, the agglomerated particle size of abrasive particles in the CMP slurry can be reduced, while the viscosity of the CMP slurry can be reduced and the global planarity of wafers upon polishing can be improved. Thus, the CMP slurry can be advantageously used in processes for manufacturing semiconductor devices requiring fine patterns and can improve the reliability and production of semiconductor devices through the use thereof in semiconductor processes.

摘要翻译： 公开了一种CMP浆料，其中将包含重均分子量为30-500并含有羟基（OH），羧基（COOH）或二者）的化合物加入到包含磨料颗粒和水的CMP浆料中 并且具有第一粘度，使得CMP浆料被控制为具有比第一粘度低5-30％的第二粘度。 还公开了使用CMP浆料来研磨半导体晶片的方法。 根据所公开的发明，可以减少CMP浆料中的磨料颗粒的聚集粒度，同时可以减少CMP浆料的粘度，并且可以提高抛光时晶片的全局平面性。 因此，CMP浆料可以有利地用于制造需要精细图案的半导体器件的工艺中，并且可以通过其在半导体工艺中的使用来提高半导体器件的可靠性和生产。

公开(公告)号：US07682584B2

公开(公告)日：2010-03-23

申请号：US11598100

申请日：2006-11-13

申请人： Myoung Hwan Oh ,  Jun Seok Nho ,  Jong Pil Kim ,  Jang Yul Kim ,  Seung Beom Cho

发明人： Myoung Hwan Oh ,  Jun Seok Nho ,  Jong Pil Kim ,  Jang Yul Kim ,  Seung Beom Cho

IPC分类号： C01F17/00

CPC分类号： C01F17/005 ,  B82Y30/00 ,  C01F17/0043 ,  C01P2002/60 ,  C01P2002/76 ,  C01P2004/03 ,  C01P2004/54 ,  C01P2004/62 ,  C01P2004/64 ,  C09K3/1409 ,  C09K3/1463

摘要： Method of preparing cerium carbonate powder by mixing a cerium precursor solution with a carbonate precursor solution and subjecting the mixture solution to a precipitation reaction, wherein the concentration of cerium in the cerium precursor solution ranges from 1M to 10M, the molar concentration ratio of the cerium precursor to the carbonate precursor ranges from 1:1 to 1:7, and the cerium precursor solution contains at least one additive selected from the group consisting of carbonate compounds, acrylic compounds, and sulfate ion-containing compounds. The cerium carbonate powder has an orthorhombic crystal structure, a particle size of 0.05 to 1 μm, and an aspect ratio of 1 to 5. Moreover, disclosed are cerium oxide powder prepared from said cerium carbonate powder as a precursor, a preparation method thereof, and a CMP slurry containing said cerium oxide powder as an abrasive.

摘要翻译： 通过将铈前体溶液与碳酸盐前体溶液混合并使混合溶液进行沉淀反应制备碳酸铈粉末的方法，其中铈前体溶液中铈的浓度范围为1M至10M，铈的摩尔浓度比 碳酸酯前体的前体的范围为1:1至1:7，并且铈前体溶液含有至少一种选自碳酸酯化合物，丙烯酸化合物和含硫酸根离子的化合物的添加剂。 碳酸铈粉末具有正交晶体结构，粒径为0.05〜1μm，长径比为1〜5。此外，作为前体的碳酸铈粉末制备的氧化铈粉末，其制备方法， 和含有所述氧化铈粉末作为研磨剂的CMP浆料。

公开(公告)号：US20120187333A1

公开(公告)日：2012-07-26

申请号：US13420815

申请日：2012-03-15

申请人： Gi Ra Yi ,  Jong Pil Kim ,  Jung Hee Lee ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

发明人： Gi Ra Yi ,  Jong Pil Kim ,  Jung Hee Lee ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

IPC分类号： C09K13/00

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/31053

摘要： Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a mixture of a linear polyelectrolyte having a weight average molecular weight of 2,000˜50,000 with a graft type polyelectrolyte that has a weight average molecular weight of 1,000˜20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed. The adjuvant comprising a mixture of a linear polyelectrolyte with a graft type polyelectrolyte makes it possible to increase polishing selectivity as compared to CMP slurry using the linear polyelectrolyte alone, and to obtain a desired range of polishing selectivity by controlling the ratio of the linear polyelectrolyte to the graft type polyelectrolyte.

摘要翻译： 公开了一种用于同时抛光阳离子充电材料和阴离子充电材料的助剂，其中助剂包含聚电解质盐，该聚电解质盐包含：（a）重均分子量为2,000〜50,000的线性聚电解质与 接枝型聚电解质，其重均分子量为1,000〜20,000，包含骨架和侧链; 和（b）基本材料。 还公开了包含上述助剂和磨料颗粒的CMP（化学机械抛光）浆料。 包含线性聚电解质与接枝型聚电解质的混合物的佐剂使得可以使用单独的线性聚电解质与CMP浆料相比提高抛光选择性，并且通过控制线性聚电解质与 接枝型聚电解质。

公开(公告)号：US08147711B2

公开(公告)日：2012-04-03

申请号：US12086155

申请日：2006-12-08

申请人： Jung Hee Lee ,  Jong Pil Kim ,  Gi Ra Yi ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

发明人： Jung Hee Lee ,  Jong Pil Kim ,  Gi Ra Yi ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

IPC分类号： C09K13/00

CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

摘要： Disclosed is an adjuvant for controlling polishing selectivity when polishing a cationically charged material simultaneously with an anionically charged material. CMP slurry comprising the adjuvant is also disclosed. The adjuvant comprises: (a) a polyelectrolyte that forms an adsorption layer on the cationically charged material in order to increase the polishing selectivity of the anionically charged material; (b) a basic material; and (c) a fluorine-based compound. when the adjuvant for controlling polishing selectivity of CMP slurry according to the present invention is applied to a CMP process, it is possible to increase the polishing selectivity of a silicon oxide layer, to obtain a uniform particle size of CMP slurry, to stabilize variations in viscosity under an external force and to minimize generation of microscratches during a polishing process. Therefore, the adjuvant for CMP slurry according to the present invention can improve reliability and productivity during the fabrication of very large scale integrated semiconductors.

摘要翻译： 公开了用于在与阴离子充电材料同时研磨阳离子充电材料时控制抛光选择性的佐剂。 还公开了包含佐剂的CMP浆料。 助剂包括：（a）在阳离子充电材料上形成吸附层的聚电解质，以增加阴离子充电材料的抛光选择性; （b）基本材料; 和（c）氟系化合物。 当将用于控制根据本发明的CMP浆料的抛光选择性的佐剂应用于CMP工艺时，可以增加氧化硅层的抛光选择性，以获得CMP浆料的均匀粒度，以稳定化 在外力下的粘度并且在抛光过程中最小化微细纹的产生。 因此，根据本发明的用于CMP浆料的助剂可以在制造非常大规模的集成半导体期间提高可靠性和生产率。

公开(公告)号：US20090267020A1

公开(公告)日：2009-10-29

申请号：US12086155

申请日：2006-12-08

申请人： Jung Hee Lee ,  Jong Pil Kim ,  Gi Ra Yi ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

发明人： Jung Hee Lee ,  Jong Pil Kim ,  Gi Ra Yi ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

IPC分类号： C09K3/14

CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

摘要： Disclosed is an adjuvant for controlling polishing selectivity when polishing a cationically charged material simultaneously with an anionically charged material. CMP slurry comprising the adjuvant is also disclosed. The adjuvant comprises: (a) a polyelectrolyte that forms an adsorption layer on the cationically charged material in order to increase the polishing selectivity of the anionically charged material; (b) a basic material; and (c) a fluorine-based compound. when the adjuvant for controlling polishing selectivity of CMP slurry according to the present invention is applied to a CMP process, it is possible to increase the polishing selectivity of a silicon oxide layer, to obtain a uniform particle size of CMP slurry, to stabilize variations in viscosity under an external force and to minimize generation of microscratches during a polishing process. Therefore, the adjuvant for CMP slurry according to the present invention can improve reliability and productivity during the fabrication of very large scale integrated semiconductors.

摘要翻译： 公开了用于在与阴离子充电材料同时研磨阳离子充电材料时控制抛光选择性的佐剂。 还公开了包含佐剂的CMP浆料。 助剂包括：（a）在阳离子充电材料上形成吸附层的聚电解质，以增加阴离子充电材料的抛光选择性; （b）基本材料; 和（c）氟系化合物。 当将用于控制根据本发明的CMP浆料的抛光选择性的佐剂应用于CMP工艺时，可以增加氧化硅层的抛光选择性，以获得CMP浆料的均匀粒度，以稳定化 在外力下的粘度并且在抛光过程中最小化微细纹的产生。 因此，根据本发明的用于CMP浆料的助剂可以在制造非常大规模的集成半导体期间提高可靠性和生产率。