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    Method for preparing cerium carbonate powder using urea
    1.
    发明授权
    Method for preparing cerium carbonate powder using urea 有权
    使用尿素制备碳酸铈粉末的方法

    公开(公告)号：US08303918B2

    公开(公告)日：2012-11-06

    申请号：US12531452

    申请日：2008-03-14

    申请人： Myoung-Hwan Oh ,  Seung-Beom Cho ,  Jun-Seok Nho ,  Jong-Pil Kim ,  Jang-Yul Kim ,  Dong-Mok Shin

    发明人： Myoung-Hwan Oh ,  Seung-Beom Cho ,  Jun-Seok Nho ,  Jong-Pil Kim ,  Jang-Yul Kim ,  Dong-Mok Shin

    IPC分类号： C01F17/00 ,  C09K3/14

    CPC分类号： C01F17/005 ,  C01P2002/72

    摘要： In a method for preparing cerium carbonate powder by mixing a cerium precursor solution with a urea solution and carrying out a precipitation reaction, wherein the cerium carbonate powder has a hexagonal crystal structure, by using at least one type of organic solvent as a solvent for either or both the cerium precursor solution and the urea solution, and adjusting temperature of the precipitation reaction within a range of 120° C. to 300° C. Also, the method can yield cerium carbonate powder, cerium oxide powder from the cerium carbonate powder, and CMP slurry including the cerium oxide powder as an abrasive. In the method, urea as a precipitant can improve the uniformity of a reaction, and thus it is possible to easily and inexpensively obtain cerium carbonate powder with a hexagonal crystal structure without the danger by high-temperature high-pressure and the need for an expensive system in hydrothermal synthesis.

    摘要翻译： 在通过将铈前体溶液与尿素溶液混合并进行沉淀反应制备碳酸铈粉末的方法中，其中所述碳酸铈粉末具有六方晶系结构，通过使用至少一种有机溶剂作为溶剂用于任一种 或铈前体溶液和尿素溶液两者，并将沉淀反应的温度调节在120℃至300℃的范围内。此外，该方法可以从碳酸铈粉末中得到碳酸铈粉末，氧化铈粉末， 和包括氧化铈粉末作为研磨剂的CMP浆料。 在该方法中，作为沉淀剂的尿素可以提高反应的均匀性，因此可以容易且廉价地获得六方晶系结构的碳酸铈粉末，而不会受到高温高压的危险，并且需要昂贵的 水热合成系统。

    Method for preparing cerium oxide powder using organic solvent and CMP slurry comprising the same
    2.
    发明授权
    Method for preparing cerium oxide powder using organic solvent and CMP slurry comprising the same 有权
    使用有机溶剂制备氧化铈粉末的方法和包含该方法的CMP浆料

    公开(公告)号：US08173039B2

    公开(公告)日：2012-05-08

    申请号：US12312601

    申请日：2007-11-20

    申请人： Jun-Seok Nho ,  Myoung-Hwan Oh ,  Seung-Beom Cho ,  Jong-Pil Kim ,  Jang-Yul Kim

    发明人： Jun-Seok Nho ,  Myoung-Hwan Oh ,  Seung-Beom Cho ,  Jong-Pil Kim ,  Jang-Yul Kim

    IPC分类号： C09K13/00

    CPC分类号： C09G1/02 ,  B82Y30/00 ,  C01F17/0043 ,  C01P2002/72 ,  C01P2002/76 ,  C01P2004/03 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2006/12 ,  C09K3/1409 ,  H01L21/31053 ,  Y10T428/2982

    摘要： Disclosed is a method for directly preparing cerium oxide powder in a solution phase by a) mixing a cerium precursor solution with a precipitant solution to cause a reaction; and b) performing oxidation treatment of the reacted solution, wherein at least one kind of pure organic solvent containing no water is used as a solvent for the cerium precursor solution as well as the precipitant solution to thereby prepare the cerium oxide powder, the particle size of which is adjusted to 50 nm to 3 μm. Cerium oxide powder obtained from the method and CMP slurry comprising the cerium oxide powder as a polishing agent are also disclosed. The method makes it possible to prepare cerium oxide powder with an average particle size of 50 nm or greater and high crystallinity, which is difficult to prepare by the conventional wet precipitation process, by using an organic solvent as a solvent in a wet precipitation process, and the so-prepared cerium oxide powder can be used as a polishing agent for CMP slurry even without being subjected to separate heat treatment.

    摘要翻译： 公开了一种通过以下步骤直接制备氧化铈粉末的方法：a）将铈前体溶液与沉淀剂溶液混合以引起反应; 和b）对反应溶液进行氧化处理，其中使用至少一种不含水的纯有机溶剂作为铈前体溶液的溶剂以及沉淀剂溶液，从而制备氧化铈粉末，其粒径 调整为50nm〜3μm。 还公开了由该方法获得的氧化铈粉末和包含氧化铈粉末作为抛光剂的CMP浆料。 该方法可以通过在湿沉淀法中使用有机溶剂作为溶剂来制备平均粒径为50nm以上的高结晶度的氧化铈粉末，这在常规的湿法沉淀法难以制备， 并且如此制备的氧化铈粉末即使不经过单独的热处理也可用作CMP浆料的抛光剂。

    Method for preparing cerium carbonate powder
    3.
    发明授权
    Method for preparing cerium carbonate powder 有权
    碳酸铈粉末的制备方法

    公开(公告)号：US07976810B2

    公开(公告)日：2011-07-12

    申请号：US12531450

    申请日：2008-03-14

    申请人： Myoung-Hwan Oh ,  Seung-Beom Cho ,  Jun-Seok Nho ,  Jong-Pil Kim ,  Jang-Yul Kim

    发明人： Myoung-Hwan Oh ,  Seung-Beom Cho ,  Jun-Seok Nho ,  Jong-Pil Kim ,  Jang-Yul Kim

    IPC分类号： C01B31/24

    CPC分类号： C01F17/0043 ,  C01F17/005 ,  C01P2002/72 ,  C01P2002/76 ,  C09K3/1409 ,  C09K3/1463

    摘要： In a method for preparing cerium carbonate powder by mixing a cerium precursor solution with a carbonate precursor solution and carrying out a precipitation reaction, wherein cerium carbonate is controlled to have an orthorhombic crystal structure, a hexagonal crystal structure or an orthorhombic/hexagonal mixed crystal structure, by using at least one type of organic solvent comprising at least two hydroxyl groups (OH) in molecular formula as a solvent for either or both the cerium precursor solution and the carbonate precursor solution, and varying a number of carbons or hydroxyl groups (OH) included in the molecular formula of the organic solvent. The method can easily and inexpensively obtain cerium carbonate powder with a desired crystal structure without the danger by high-temperature high-pressure and the need for an expensive system in hydrothermal synthesis.

    摘要翻译： 在通过将铈前体溶液与碳酸酯前体溶液混合并进行沉淀反应制备碳酸铈粉末的方法中，其中将碳酸铈控制为具有正交晶体结构，六方晶系结构或正交/六方晶系混合晶体结构 通过使用包含分子式中的至少两个羟基（OH）的至少一种类型的有机溶剂作为铈前体溶液和碳酸酯前体溶液中的任一种或两者的溶剂，并且改变多个碳或羟基（OH ）包括在有机溶剂的分子式中。 该方法可以容易且廉价地获得具有所需晶体结构的碳酸铈粉末，而没有高温高压的危险和需要昂贵的水热合成系统。

    Cerium carbonate powder, method for preparing the same, cerium oxide powder made therefrom, method for preparing the same, and CMP slurry comprising the same
    5.
    发明授权
    Cerium carbonate powder, method for preparing the same, cerium oxide powder made therefrom, method for preparing the same, and CMP slurry comprising the same 有权
    碳酸铈粉末，其制备方法，由其制成的氧化铈粉末，其制备方法以及包含其的CMP浆料

    公开(公告)号：US08361419B2

    公开(公告)日：2013-01-29

    申请号：US12591227

    申请日：2009-11-12

    申请人： Myoung Hwan Oh ,  Jun Seok Nho ,  Jong Pil Kim ,  Jang Yul Kim ,  Seung Beom Cho

    发明人： Myoung Hwan Oh ,  Jun Seok Nho ,  Jong Pil Kim ,  Jang Yul Kim ,  Seung Beom Cho

    IPC分类号： C01F17/00

    CPC分类号： C01F17/0043 ,  C01F17/005 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/80

    摘要： Disclosed is a method for preparing cerium carbonate powder by mixing a cerium precursor solution with a carbonate precursor solution to cause precipitation, wherein at least one solvent used in the cerium precursor solution and the carbonate precursor solution is an organic solvent. Cerium carbonate powder obtained from the method, cerium oxide powder obtained from the cerium carbonate powder, a method for preparing the cerium oxide powder, and CMP slurry comprising the cerium oxide powder are also disclosed. The method for preparing cerium carbonate using an organic solvent, allows the resultant cerium carbonate powder to have a size and shape controllable from the initial nucleation step. Additionally, it is possible to easily control the size and shape of cerium oxide powder obtained from the cerium carbonate powder.

    摘要翻译： 公开了一种通过将铈前体溶液与碳酸酯前体溶液混合以制备沉淀来制备碳酸铈粉末的方法，其中用于铈前体溶液和碳酸酯前体溶液中的至少一种溶剂是有机溶剂。 还公开了从该方法得到的碳酸铈粉末，由碳酸铈粉末得到的氧化铈粉末，氧化铈粉末的制备方法和含有氧化铈粉末的CMP浆料。 使用有机溶剂制备碳酸铈的方法允许所得的碳酸铈粉末具有从初始成核步骤可控的尺寸和形状。 此外，可以容易地控制由碳酸铈粉末获得的氧化铈粉末的尺寸和形状。

    CMP SLURRY AND A POLISHING METHOD USING THE SAME
    7.
    发明申请
    CMP SLURRY AND A POLISHING METHOD USING THE SAME 有权
    CMP浆料和使用其的抛光方法

    公开(公告)号：US20110008967A1

    公开(公告)日：2011-01-13

    申请号：US12921341

    申请日：2009-03-03

    申请人： Jong-Pil Kim ,  Seung-Beom Cho ,  Jun-Seok Noh ,  Jang-Yul Kim

    发明人： Jong-Pil Kim ,  Seung-Beom Cho ,  Jun-Seok Noh ,  Jang-Yul Kim

    IPC分类号： H01L21/306 ,  C09K13/06

    CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/76229

    摘要： The present invention relates to a CMP slurry that is able to reduce dishing generation, when it is applied to polishing or planarization of silicon oxide layer, for example, and a polishing method.The CMP slurry includes a polishing abrasive, a linear anionic polymer, a compound including a phosphoric acid group, and water, and the ratio of CMP polishing speed to a silicon oxide layer: CMP polishing speed to a silicon nitride layer is 30:1 to 50:1.

    摘要翻译： 本发明涉及当其用于例如氧化硅层的抛光或平面化时能够减少凹陷产生的CMP浆料，以及抛光方法。 CMP浆料包括抛光磨料，线性阴离子聚合物，包含磷酸基团和水的化合物，CMP抛光速度与氧化硅层的比例：CMP抛光速度与氮化硅层的比例为30:1至 50：1。

    CMP slurry and method for polishing semiconductor wafer using the same
    8.
    发明授权
    CMP slurry and method for polishing semiconductor wafer using the same 有权
    CMP浆料和使用其的抛光半导体晶片的方法

    公开(公告)号：US07736530B2

    公开(公告)日：2010-06-15

    申请号：US11657051

    申请日：2007-01-24

    申请人： Seung Beom Cho ,  Jong Pil Kim ,  Jun Seok Nho ,  Myoung Hwan Oh ,  Jang Yul Kim

    发明人： Seung Beom Cho ,  Jong Pil Kim ,  Jun Seok Nho ,  Myoung Hwan Oh ,  Jang Yul Kim

    IPC分类号： C09K13/04

    CPC分类号： C09G1/02 ,  H01L21/3212

    摘要： Disclosed is a CMP slurry in which a compound having a weight-average molecular weight of 30-500 and containing a hydroxyl group (OH), a carboxyl group (COOH), or both, is added to a CMP slurry comprising abrasive particles and water and having a first viscosity, so that the CMP slurry is controlled to have a second viscosity 5-30% lower than the first viscosity. Also disclosed is a method for polishing a semiconductor wafer using the CMP slurry. According to the disclosed invention, the agglomerated particle size of abrasive particles in the CMP slurry can be reduced, while the viscosity of the CMP slurry can be reduced and the global planarity of wafers upon polishing can be improved. Thus, the CMP slurry can be advantageously used in processes for manufacturing semiconductor devices requiring fine patterns and can improve the reliability and production of semiconductor devices through the use thereof in semiconductor processes.

    摘要翻译： 公开了一种CMP浆料，其中将包含重均分子量为30-500并含有羟基（OH），羧基（COOH）或二者）的化合物加入到包含磨料颗粒和水的CMP浆料中 并且具有第一粘度，使得CMP浆料被控制为具有比第一粘度低5-30％的第二粘度。 还公开了使用CMP浆料来研磨半导体晶片的方法。 根据所公开的发明，可以减少CMP浆料中的磨料颗粒的聚集粒度，同时可以减少CMP浆料的粘度，并且可以提高抛光时晶片的全局平面性。 因此，CMP浆料可以有利地用于制造需要精细图案的半导体器件的工艺中，并且可以通过其在半导体工艺中的使用来提高半导体器件的可靠性和生产。