利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

24 条记录 (耗时 0.018 秒)

    Polishing pad for chemical mechanical polishing apparatus
    2.
    发明授权
    Polishing pad for chemical mechanical polishing apparatus 有权
    化学机械抛光设备抛光垫

    公开(公告)号：US08920220B2

    公开(公告)日：2014-12-30

    申请号：US13233715

    申请日：2011-09-15

    申请人： Ah-Ram Kim ,  Byeong-In Ahn ,  Dong-Mok Shin

    发明人： Ah-Ram Kim ,  Byeong-In Ahn ,  Dong-Mok Shin

    IPC分类号： B24D11/00 ,  B24B37/22

    CPC分类号： B24B37/22

    摘要： This disclosure relates to a polishing pad for chemical mechanical polishing, having a shape where 3 or more semi-oval or semicircular curves that connect 2 valleys neighboring on the plane are connected, and including 2 or more modified patterns that are formed to a determined thickness on the polishing pad, wherein a peak of one modified pattern and a valley of another modified pattern neighboring thereto are sequentially located on the same line. The polishing pad may uniformly disperse slurry over the whole area during a polishing process to provide improved polishing uniformity, and appropriately control residence time of the slurry to increase polishing rate.

    摘要翻译： 本公开涉及一种用于化学机械抛光的抛光垫，其具有连接3个或更多个连接在平面上相邻的2个谷的半椭圆形或半圆形曲线的形状，并且包括形成为确定厚度的2个或更多个修改图案 在抛光垫上，其中一个修改图案的峰值和与其相邻的另一个修改图案的谷值依次位于同一行上。 抛光垫可以在抛光过程中将浆料均匀地分散在整个区域上，以提供改进的抛光均匀性，并适当地控制浆料的停留时间以提高抛光速率。

    SLURRY COMPOSITION FOR CMP, AND POLISHING METHOD
    5.
    发明申请
    SLURRY COMPOSITION FOR CMP, AND POLISHING METHOD 有权
    用于CMP和抛光方法的浆料组合物

    公开(公告)号：US20120270399A1

    公开(公告)日：2012-10-25

    申请号：US13502062

    申请日：2010-10-13

    申请人： Dong-Mok Shin ,  Eun-Mi Choi ,  Seung-Beom Cho

    发明人： Dong-Mok Shin ,  Eun-Mi Choi ,  Seung-Beom Cho

    IPC分类号： C09K13/00 ,  C09K13/06 ,  H01L21/306 ,  C09K13/02 ,  B82Y30/00

    CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1463

    摘要： The present invention relates to a CMP slurry composition comprising an abrasive particle; a dispersant; an ionic polymer additive; and a non-ionic polymer additive including a polyolefin-polyethylene glycol copolymer including at least two polyethylene glycol repeat unit as a backbone and at least a polyethylene glycol repeating unit as a side chain, and a polishing method with using the slurry composition. The CMP slurry composition shows a low polishing rate to a single-crystalline silicon layer or a polysilicon layer and a high polishing rate to a silicon oxide layer, resulting in having an excellent polishing selectivity.

    摘要翻译： 本发明涉及包含磨料颗粒的CMP浆料组合物; 分散剂; 离子聚合物添加剂; 以及包含至少包含两个聚乙二醇重复单元作为主链的聚烯烃 - 聚乙二醇共聚物和至少一个作为侧链的聚乙二醇重复单元的非离子聚合物添加剂和使用该浆料组合物的抛光方法。 CMP浆料组合物显示对单晶硅层或多晶硅层的低抛光速率和对氧化硅层的高抛光速率，导致具有优异的抛光选择性。

    POLISHING PAD FOR CHEMICAL MECHANICAL POLISHING APPARATUS
    6.
    发明申请
    POLISHING PAD FOR CHEMICAL MECHANICAL POLISHING APPARATUS 有权
    化学机械抛光设备抛光垫

    公开(公告)号：US20120071068A1

    公开(公告)日：2012-03-22

    申请号：US13233715

    申请日：2011-09-15

    申请人： Ah-Ram KIM ,  Byeong-In AHN ,  Dong-Mok SHIN

    发明人： Ah-Ram KIM ,  Byeong-In AHN ,  Dong-Mok SHIN

    IPC分类号： B24D11/00 ,  B24B53/017

    CPC分类号： B24B37/22

    摘要： This disclosure relates to a polishing pad for chemical mechanical polishing, having a shape where 3 or more semi-oval or semicircular curves that connect 2 valleys neighboring on the plane are connected, and including 2 or more modified patterns that are formed to a determined thickness on the polishing pad, wherein a peak of one modified pattern and a valley of another modified pattern neighboring thereto are sequentially located on the same line. The polishing pad may uniformly disperse slurry over the whole area during a polishing process to provide improved polishing uniformity, and appropriately control residence time of the slurry to increase polishing rate.

    摘要翻译： 本公开涉及一种用于化学机械抛光的抛光垫，其具有连接3个或更多个连接在平面上相邻的2个谷的半椭圆形或半圆形曲线的形状，并且包括形成为确定厚度的2个或更多个修改图案 在抛光垫上，其中一个修改图案的峰值和与其相邻的另一个修改图案的谷值依次位于同一行上。 抛光垫可以在抛光过程中将浆料均匀地分散在整个区域上，以提供改进的抛光均匀性，并适当地控制浆料的停留时间以提高抛光速率。

    SLURRY COMPOSITION FOR PRIMARY CHEMICAL MECHANICAL POLISHING AND CHEMICAL MECHANICAL POLISHING METHOD
    7.
    发明申请
    SLURRY COMPOSITION FOR PRIMARY CHEMICAL MECHANICAL POLISHING AND CHEMICAL MECHANICAL POLISHING METHOD 审中-公开
    主要化学机械抛光和化学机械抛光方法的浆料组合物

    公开(公告)号：US20100151684A1

    公开(公告)日：2010-06-17

    申请号：US12630556

    申请日：2009-12-03

    申请人： Eun-Mi CHOI ,  Dong-Mok SHIN ,  Seung-Beom CHO

    发明人： Eun-Mi CHOI ,  Dong-Mok SHIN ,  Seung-Beom CHO

    IPC分类号： H01L21/306 ,  C09K13/00 ,  C09K13/06

    CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/3212

    摘要： The present invention relates to a slurry composition for primary chemical mechanical polishing that can show more improved WIWNU (Within Wafer Non-Uniformity) while exhibiting excellent polishing rate and polishing selectivity, and a chemical mechanical polishing method. The slurry composition for primary chemical mechanical polishing comprises an abrasive; an oxidant, an organic acid; a specific corrosion inhibitor, and, a polymeric additive comprising polyvinylpyrrolidone having weight average molecular weight of about 3000 to 100000, and has polishing selectivity of polishing rates between a copper layer:a tantalum layer of about 30:1 or more.

    摘要翻译： 本发明涉及一种主要化学机械抛光的浆料组合物，其可以显示出更优异的WIWNU（晶片非均匀性），同时具有优异的抛光速率和抛光选择性，以及化学机械抛光方法。 用于初级化学机械抛光的浆料组合物包括研磨剂; 氧化剂，有机酸; 特定的腐蚀抑制剂，以及包含重均分子量为约3000至100000的聚乙烯吡咯烷酮的聚合物添加剂，并且在铜层：约30:1或更大的钽层之间具有抛光速率的抛光选择性。

    Method for modeling roadway and method for recognizing lane markers based on the same
    9.
    发明授权
    Method for modeling roadway and method for recognizing lane markers based on the same 失效
    巷道建模方法及其识别方法

    公开(公告)号：US6133824A

    公开(公告)日：2000-10-17

    申请号：US379594

    申请日：1999-08-24

    申请人： Suk-han Lee ,  Jae-won Lee ,  Dong-mok Shin ,  Woong Kwon ,  Dong-yoon Kim ,  Kyoung-sig Roh

    发明人： Suk-han Lee ,  Jae-won Lee ,  Dong-mok Shin ,  Woong Kwon ,  Dong-yoon Kim ,  Kyoung-sig Roh

    IPC分类号： G08G1/16 ,  B60Q1/52 ,  G01S13/93 ,  G06K9/46 ,  B60Q1/00

    CPC分类号： G06K9/00798 ,  B60Q9/008 ,  G01S13/931 ,  G06K9/4604 ,  G01S2013/9353

    摘要： A method for modeling a roadway and a method for recognizing lane markers based on the modeling method. The method for recognizing lane markers of roadway for a vehicle by getting image information about the roadway and information about the speed and steering angle using a camera and a sensor attached to the vehicle, includes the steps of modeling the actual roadway on which the vehicle travels, as a structure having a plurality of rectangular plates linked to each other. The modeled plates are overlayed onto the image information about the actual roadway, photographed by the camera, pixels forming the lane markers are extracted, and linear lane marker information is then obtained from the pixels forming the land markers. Then, the linear lane marker information is overlayed onto the modeled plates to recalculate lane marker information using the plates as a frame, and predetermined limitations of the features of the lane markers are applied to the plates onto which the linear lane marker information has been overlayed, to optimize the lane marker information. Then, the roadway on which the vehicle is traveling, is remodeled using the optimized lane marker information, the information about the speed and steering angle of the vehicle measured by the sensor, and the information about the modeled plates, and the position and orientation of the remodeled plates are calculated. Therefore, roadway recognition can be easily achieved using a modeled structure of the roadway, in which a plurality of rectangular plates are linked. Also, the model roadway is repeatedly mapped onto the actual roadway image, so that reliability in recognition of roadway increases.

    摘要翻译： 基于建模方法的道路建模方法和车道识别识别方法。 通过使用摄像机和安装在车辆上的传感器获取关于车道的图像信息和关于速度和转向角的信息来识别车辆道路车道标记的方法包括以下步骤：对车辆行进的实际道路进行建模 作为具有彼此连接的多个矩形板的结构。 将建模的板叠加在由相机拍摄的关于实际道路的图像信息上，提取形成车道标记的像素，然后从形成陆地标记的像素获得线性车道标记信息。 然后，将线性车道标记信息覆盖在建模的板上，以板为框重新计算车道标记信息，并且将车道标记的特征的预定限制应用于已经覆盖线性车道标记信息的板 ，以优化车道标记信息。 然后，使用优化的车道标记信息，由传感器测量的关于车辆的速度和转向角的信息以及关于模型板的信息，以及关于车辆行驶的道路的位置和方位 计算出改造后的板材。 因此，可以使用多个矩形板连接的道路的建模结构容易地实现道路识别。 此外，模型道路被重复地映射到实际的道路图像上，使得道路识别的可靠性增加。

    Method for preparing cerium carbonate powder using urea
    10.
    发明授权
    Method for preparing cerium carbonate powder using urea 有权
    使用尿素制备碳酸铈粉末的方法

    公开(公告)号：US08303918B2

    公开(公告)日：2012-11-06

    申请号：US12531452

    申请日：2008-03-14

    申请人： Myoung-Hwan Oh ,  Seung-Beom Cho ,  Jun-Seok Nho ,  Jong-Pil Kim ,  Jang-Yul Kim ,  Dong-Mok Shin

    发明人： Myoung-Hwan Oh ,  Seung-Beom Cho ,  Jun-Seok Nho ,  Jong-Pil Kim ,  Jang-Yul Kim ,  Dong-Mok Shin

    IPC分类号： C01F17/00 ,  C09K3/14

    CPC分类号： C01F17/005 ,  C01P2002/72

    摘要： In a method for preparing cerium carbonate powder by mixing a cerium precursor solution with a urea solution and carrying out a precipitation reaction, wherein the cerium carbonate powder has a hexagonal crystal structure, by using at least one type of organic solvent as a solvent for either or both the cerium precursor solution and the urea solution, and adjusting temperature of the precipitation reaction within a range of 120° C. to 300° C. Also, the method can yield cerium carbonate powder, cerium oxide powder from the cerium carbonate powder, and CMP slurry including the cerium oxide powder as an abrasive. In the method, urea as a precipitant can improve the uniformity of a reaction, and thus it is possible to easily and inexpensively obtain cerium carbonate powder with a hexagonal crystal structure without the danger by high-temperature high-pressure and the need for an expensive system in hydrothermal synthesis.

    摘要翻译： 在通过将铈前体溶液与尿素溶液混合并进行沉淀反应制备碳酸铈粉末的方法中，其中所述碳酸铈粉末具有六方晶系结构，通过使用至少一种有机溶剂作为溶剂用于任一种 或铈前体溶液和尿素溶液两者，并将沉淀反应的温度调节在120℃至300℃的范围内。此外，该方法可以从碳酸铈粉末中得到碳酸铈粉末，氧化铈粉末， 和包括氧化铈粉末作为研磨剂的CMP浆料。 在该方法中，作为沉淀剂的尿素可以提高反应的均匀性，因此可以容易且廉价地获得六方晶系结构的碳酸铈粉末，而不会受到高温高压的危险，并且需要昂贵的 水热合成系统。