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公开(公告)号：US10082715B2
公开(公告)日：2018-09-25
申请号：US15501396
申请日：2015-07-29
发明人： Kuniaki Okada , Seiichi Uchida
IPC分类号： G02F1/136 , G02F1/1343 , G02F1/1368 , G02F1/1333 , G02F1/1337 , G02F1/1362
CPC分类号： G02F1/1368 , G02F1/133345 , G02F1/133707 , G02F1/134363 , G02F1/1362 , G02F1/136227 , G02F2001/134318 , G02F2201/121 , G02F2201/123 , G02F2202/16
摘要： A conductive element includes: a first conductive film; a second conductive film connected to the first conductive film; a first insulating film covering the first conductive film and disposed in a layer below the second conductive film, the first insulating film having a contact hole exposing at least an edge face of the first conductive film and thereby connecting the second conductive film to the first conductive film; a second insulating film disposed in a layer above the second insulating film so as to straddle the contact hole; and a third conductive film disposed in a layer above the second conductive film with the second insulating film between the second and third conductive films, the third conductive film having a conductive film opening that contains a location overlapping the edge face of the first conductive film in a plan view.
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公开(公告)号：US20160358943A1
公开(公告)日：2016-12-08
申请号：US15117161
申请日：2015-02-12
发明人： Kuniaki Okada , Seiichi Uchida
IPC分类号： H01L27/12 , G02F1/1362 , G02F1/1368 , H01L29/423 , H01L29/786 , H01L29/24 , H01L29/66 , G02F1/1343 , G02F1/1333
CPC分类号： H01L27/1225 , G02F1/133345 , G02F1/134336 , G02F1/13439 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2001/134372 , G02F2001/136295 , G02F2201/121 , G02F2201/123 , H01L27/124 , H01L27/1248 , H01L27/1259 , H01L29/24 , H01L29/42356 , H01L29/66969 , H01L29/786 , H01L29/7869
摘要： Each pixel region of an active matrix substrate includes a thin-film transistor, an interlayer insulating layer that includes an organic insulating layer, a transparent connection layer formed on the interlayer insulating layer, an inorganic insulating layer formed on the transparent connection layer, and a pixel electrode formed on the inorganic insulating layer. The transparent connection layer contacts a drain electrode inside of a first contact hole formed in the interlayer insulating layer. The pixel electrode contacts the transparent connection layer inside of a second contact hole formed in the inorganic insulating layer. The first contact hole and the second contact hole do not overlap with one another when a substrate is viewed from a normal direction. Inside the first contact hole, a bottom surface and sidewalls of the first contact hole are covered by the transparent connection layer, the inorganic insulating layer, and the pixel electrode.
摘要翻译： 有源矩阵基板的每个像素区域包括薄膜晶体管，包括有机绝缘层的层间绝缘层，形成在层间绝缘层上的透明连接层，形成在透明连接层上的无机绝缘层，以及 形成在无机绝缘层上的像素电极。 透明连接层与形成在层间绝缘层中的第一接触孔内的漏电极接触。 像素电极与在无机绝缘层中形成的第二接触孔内部的透明连接层接触。 当从正常方向观察衬底时，第一接触孔和第二接触孔彼此不重叠。 在第一接触孔的内部，第一接触孔的底面和侧壁被透明连接层，无机绝缘层和像素电极覆盖。
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公开(公告)号：US11067843B2
公开(公告)日：2021-07-20
申请号：US16834279
申请日：2020-03-30
发明人： Kuniaki Okada , Hiromi Katoh , Keisuke Yoshida
IPC分类号： G02F1/1335 , G02F1/1339 , G02F1/1333 , G06F1/16
摘要： A display device for a head-mounted display includes a first display panel and a second display panel that are arranged in parallel. The first display panel and second display panel each include a pair of substrates having a plane sectioned into a display region and a non-display region, and a columnar spacer interposed between the substrates. The substrate includes a spacer lightproof portion placed over the spacer. The first display panel and second display panel do not coincide with each other with regard to a location where the spacer lightproof portion in the display region is disposed.
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公开(公告)号：US10698283B2
公开(公告)日：2020-06-30
申请号：US16147407
申请日：2018-09-28
发明人： Kuniaki Okada , Seiichi Uchida
IPC分类号： G02F1/1368 , G02F1/1335 , G02F1/1339 , H01L29/24 , H01L29/786 , H01L27/12
摘要： A liquid crystal display device includes a first substrate, a second substrate, a liquid crystal layer, and a plurality of columnar spacers. The pixel arrangement is a stripe arrangement including red, green and blue pixel columns. The first substrate includes TFTs, one for each pixel, wherein each TFT includes an oxide semiconductor layer. The second substrate includes a color filter layer and a light-blocking layer. The light-blocking layer includes a plurality of first shading portions extending along the column direction, and a plurality of second shading portions extending along the row direction. Each of the columnar spacers is aligned with one of the second shading portions. At least one of the red, green and blue pixel columns has first pixel boundaries, where one of the second shading portions is present, and second pixel boundaries, where none of the second shading portions present, alternating with each other in the column direction, and the second shading portions are arranged in a staggered arrangement.
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公开(公告)号：US09608008B2
公开(公告)日：2017-03-28
申请号：US15117161
申请日：2015-02-12
发明人： Kuniaki Okada , Seiichi Uchida
IPC分类号： H01L29/10 , H01L27/12 , G02F1/1368 , H01L29/786 , G02F1/1362 , G02F1/1333 , G02F1/1343 , H01L29/24 , H01L29/423 , H01L29/66
CPC分类号： H01L27/1225 , G02F1/133345 , G02F1/134336 , G02F1/13439 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2001/134372 , G02F2001/136295 , G02F2201/121 , G02F2201/123 , H01L27/124 , H01L27/1248 , H01L27/1259 , H01L29/24 , H01L29/42356 , H01L29/66969 , H01L29/786 , H01L29/7869
摘要： Each pixel region of an active matrix substrate includes a thin-film transistor, an interlayer insulating layer that includes an organic insulating layer, a transparent connection layer formed on the interlayer insulating layer, an inorganic insulating layer formed on the transparent connection layer, and a pixel electrode formed on the inorganic insulating layer. The transparent connection layer contacts a drain electrode inside of a first contact hole formed in the interlayer insulating layer. The pixel electrode contacts the transparent connection layer inside of a second contact hole formed in the inorganic insulating layer. The first contact hole and the second contact hole do not overlap with one another when a substrate is viewed from a normal direction. Inside the first contact hole, a bottom surface and sidewalls of the first contact hole are covered by the transparent connection layer, the inorganic insulating layer, and the pixel electrode.
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公开(公告)号：US10976626B2
公开(公告)日：2021-04-13
申请号：US16895114
申请日：2020-06-08
发明人： Kuniaki Okada , Keisuke Yoshida
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , H01L27/12
摘要： A display device includes: an active matrix substrate including a plurality of pixels arrayed in a matrix shape, wherein the active matrix substrate includes, in each of the plurality of pixels, a TFT, an insulating layer substantially covering the TFT, a pixel electrode formed of a transparent conductive material and electrically connected to the TFT, a color filter located between the TFT and the pixel electrode, and an intermediate layer electrode formed of a transparent conductive material, at least partially located between the insulating layer and the color filter, and electrically connecting a drain electrode of the TFT to the pixel electrode, the pixel electrode is connected to the intermediate layer electrode at a contact hole formed in the color filter, and when viewed in a normal direction of a display surface, the contact hole at least partially overlaps a gate electrode of the TFT.
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公开(公告)号：US10768496B2
公开(公告)日：2020-09-08
申请号：US15779103
申请日：2017-02-17
发明人： Seiichi Uchida , Kuniaki Okada , Naoki Ueda , Takahiro Sasaki
IPC分类号： G02F1/1368 , G09F9/30 , G02F1/1333 , G02F1/1362 , H01L29/786 , H01L27/12 , G02F1/1335 , H01L23/532 , H01L29/08 , H01L29/423
摘要： An array board 11b includes a gate line 19, a TFT 17, a pixel electrode 18, a display pixel PX, and a second interlayer insulation film 27. The TFT 17 includes a gate electrode 17a formed from a part of the gate line 19, a channel section 17d formed from an oxide semiconductor film 24, a source section 17b connected to one end of the channel section 17d, and a drain section 17c connected to another end of the channel section 17d and formed from the oxide semiconductor film 24 having resistance lower than the channel section 17d. The pixel electrode 18 is connected to the drain section 17c. The display pixel PX includes the TFT 17 and the pixel electrode 18. The second interlayer insulation film 27 has a second hole in a position overlapping the pixel electrode and the drain section 17c and not overlapping the gate electrode 17a.
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公开(公告)号：US10386670B2
公开(公告)日：2019-08-20
申请号：US15539888
申请日：2015-12-11
发明人： Seiichi Uchida , Kuniaki Okada , Naoki Ueda
IPC分类号： G02F1/1335 , G02F1/1368 , H01L27/12 , H01L29/24 , H01L29/786 , G02F1/1362
摘要： A first substrate of a display device includes a TFT provided for each pixel and including an oxide semiconductor layer. A second substrate includes a color filter layer and a light blocking layer. At least one of a first, second and third color filter included in the color filter layer has an average transmittance of 0.2% or less for visible light having a wavelength of 450 nm or less. In pixels provided with color filters having an average transmittance of 0.2% or less for visible light having a wavelength of 450 nm or less, the light blocking layer (a) includes a TFT shading portion extending along a channel length direction and having a width that is less than or equal to a length of the oxide semiconductor layer along a channel width direction; (b) includes a TFT shading portion extending along the channel width direction and having a width that is less than or equal to the length of the oxide semiconductor layer along the channel length direction; or (c) includes no TFT shading portion.
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公开(公告)号：US10243083B2
公开(公告)日：2019-03-26
申请号：US15778270
申请日：2016-11-14
发明人： Seiichi Uchida , Kuniaki Okada
IPC分类号： H01L29/66 , H01L29/786 , G02F1/1343 , G02F1/1368 , G09F9/30 , H01L21/28 , H01L29/41 , G02F1/1362 , H01L27/12 , H01L29/24
摘要： A semiconductor device (1001) includes: a thin film transistor (101) including an oxide semiconductor layer (16) including a channel region, and a source contact region and a drain contact region arranged on opposite sides of the channel region; an insulating layer arranged so as to cover the oxide semiconductor layer (16), the insulating layer having a contact hole (CH) through which the drain contact region is exposed; and a transparent electrode (24) to be in contact with the drain contact region in the contact hole (CH), wherein: as seen from a direction normal to the substrate, at least a part R of the drain contact region overlaps a gate electrode (12); and on an arbitrary cross section that extends in a channel width direction across the at least part (R) of the drain contact region, a width of the oxide semiconductor layer (16) is greater than a width of the gate electrode (12), and the gate electrode (12) is covered by the oxide semiconductor layer (16) with the gate insulating layer therebetween.
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10.发明授权公开(公告)号：US10386684B2
公开(公告)日：2019-08-20
申请号：US15534197
申请日：2015-12-14
发明人： Kuniaki Okada , Seiichi Uchida , Naoki Ueda , Sumio Katoh
IPC分类号： G02F1/1368 , G02F1/1362 , H01L29/786 , G02F1/1333 , G02F1/1337 , G02F1/1343 , H01L21/02 , H01L27/12 , H01L29/24 , H01L29/66
摘要： A semiconductor device (100A) includes a thin film transistor (10), an inter-layer insulation layer (22) covering the thin film transistor, and a transparent conductive layer (24) formed on the inter-layer insulation layer. The metal oxide layer (16) of the thin film transistor includes a first portion (16a) overlapping the gate electrode (12) via a gate insulation layer (14) and a second portion (16b) not overlapping the gate electrode (12). The second portion (16b) crosses a different edge (e2) different from an edge (e1) of the drain electrode (18d) on a side of the first portion when viewed in the normal direction of the substrate (11). The inter-layer insulation layer has a contact hole (22a) disposed to overlap a part of the drain electrode (18d) and at least a part of the second portion (16b) of the metal oxide layer when viewed in the normal direction of the substrate. The transparent conductive layer (24) comes into contact with the drain electrode (18d), the second portion (16b), and the gate insulation layer (14) in the contact hole (22a).
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