摘要:
An apparatus for displaying sub page content includes a display unit, a storage unit, and a processing unit. The apparatus communicates with a network server. The processing unit obtains a webpage from the network server and one or more sub pages linked to the webpage. The display unit displays a first window for displaying label of each sub page designating a type which is binding with each sub page. The processing unit controls the display unit to display a second window for displaying the sub page content of the label displayed on the first window which is determined to be selected according to whether operation position of user's operation performed on the first window is on the area of the label of sub page displayed. A related method is also provided.
摘要:
The present invention belongs to the technical field of optical interconnection and relates to a photo detector, in particular to a photo detector consisting of tunneling field-effect transistors.
摘要:
A stabilizer bar assembly for an automotive vehicle includes a stabilizer bar, a bushing mounted to the stabilizer bar that has a first stiffness in a first radial plane, and a second stiffness in a second radial plane approximately perpendicular to the first radial plane, a bushing retainer in mechanically compressive engagement with the bushing such that the bushing is in frictional engagement with the stabilizer bar, thereby preventing relative movement of the bushing and the stabilizer bar, and a mounting bracket adapted to connect the stabilizer bar to the automotive vehicle.
摘要:
The present invention belongs to the technical field of optical interconnection and relates to a photo detector, in particular to a photo detector consisting of tunneling field-effect transistors.
摘要:
The invention belongs to the technical field of high-voltage, large-power devices and in particular relates to a method for manufacturing a semiconductor substrate of a large-power device. According to the method, the ion implantation is carried out on the front face of a floating zone silicon wafer first, then a high-temperature resistant metal is used as a medium to bond the back-off floating zone silicon wafer, and a heavily CZ-doped silicon wafer forms the semiconductor substrate. After bonding, the floating zone silicon wafer is used to prepare an insulated gate bipolar transistor (IGBT), and the heavily CZ-doped silicon wafer is used as the low-resistance back contact, so the required amount of the floating zone silicon wafers used is reduced, and production cost is lowered. Meanwhile, the back metallization process is not required after bonding, so the processing procedures are simplified, and the production yield is enhanced.
摘要:
A stabilizer bar for an automotive vehicle is provided having an end link mounted to at least one end thereof. One end of the end link includes a bore in which is received a spherical bearing, such that forces transferred directly from the stabilizer bar to the end link are transferred through the spherical bearing. The second end of the end link is adapted to connect to a component of the vehicle's suspension system.
摘要:
The present invention belongs to the technical field of optical interconnection and relates to a photo detector, in particular to a photo detector consisting of tunneling field-effect transistors.
摘要:
The present invention belongs to the technical field of semiconductors and specifically relates to a method for manufacturing a vertical-channel tunneling transistor. In the present invention, the surrounding gate gate structure improves the control capacity of the gate and the source of narrow band gap material can enhance the device driving current. The method for manufacturing a vertical-channel tunneling transistor put forward by the present invention capable of controlling the channel length precisely features simple process, easy control and reduction of production cost.
摘要:
The present invention belongs to the technical field of semiconductor device manufacturing, and specifically discloses a method for manufacturing a gate-control diode semiconductor storage device. The present invention manufactures gate-control diode semiconductor memory devices through a low-temperature process featuring a simple process, low manufacturing cost and capacity of manufacturing gate-control diode memory devices with a high driving current and small sub-threshold swing. The method for manufacturing a gate-control diode semiconductor memory device proposed by the present invention is especially applicable to the manufacturing of flat panel displays and phase change memories and memory devices based on flexible substrate.
摘要:
A hybrid yoke for a vehicle driveshaft assembly includes a cast iron portion having a pair of opposed yoke arms at a first end. The hybrid yoke also includes a steel portion having a yoke end and a shaft end, the shaft end for coupling to the driveshaft assembly and the yoke end for insertion into a second end of the cast iron portion.