公开(公告)号：US06352875B1

公开(公告)日：2002-03-05

申请号：US09176258

申请日：1998-10-21

申请人： Shinichi Hayashi ,  Akira Funakoshi ,  Akira Tago ,  Satoshi Okada ,  Shinichi Takeda ,  Eiichi Takami ,  Masakazu Morishita ,  Chiori Mochizuki ,  Tadao Endo ,  Toshikazu Tamura

发明人： Shinichi Hayashi ,  Akira Funakoshi ,  Akira Tago ,  Satoshi Okada ,  Shinichi Takeda ,  Eiichi Takami ,  Masakazu Morishita ,  Chiori Mochizuki ,  Tadao Endo ,  Toshikazu Tamura

IPC分类号： H01L310203

CPC分类号： H01L27/14618 ,  H01L24/14 ,  H01L27/14634 ,  H01L27/14676 ,  H01L31/0203 ,  H01L31/02322 ,  H01L2924/12042 ,  H01L2924/351 ,  Y10T156/1077 ,  Y10T156/1092 ,  H01L2924/00

摘要： In a photoelectric conversion apparatus obtained by arranging and fixing a plurality of semiconductor element substrates onto a base with an adhesive, the levels of the upper surfaces of the substrates are adjusted with a desired thickness of the adhesive so as to set the upper surfaces within the same plane while the distance from the upper surface of the base to the semiconductor element surface of each substrate is kept to a design value, thereby realizing a photoelectric conversion apparatus constituted by a plurality of substrates arranged two-dimensionally, which eliminates level gaps between the substrates, and hence is free from problems such as a decrease in resolution, a deterioration in sensitivity, and peeling of a phosphor and the like.

摘要翻译： 在通过使用粘合剂将多个半导体元件基板布置并固定到基底上而获得的光电转换装置中，以期望的粘合剂厚度调整基板的上表面的水平，以将上表面设置在 从基板的上表面到每个基板的半导体元件表面的距离保持相同的平面，从而实现由二维排列的多个基板构成的光电转换装置，从而消除了 基板，因此没有诸如分辨率降低，灵敏度降低和荧光体剥离等问题。

公开(公告)号：US5856699A

公开(公告)日：1999-01-05

申请号：US733772

申请日：1996-10-18

申请人： Shinichi Hayashi ,  Akira Funakoshi ,  Akira Tago ,  Satoshi Okada ,  Shinichi Takeda ,  Eiichi Takami ,  Masakazu Morishita ,  Chiori Mochizuki ,  Tadao Endo ,  Toshikazu Tamura

发明人： Shinichi Hayashi ,  Akira Funakoshi ,  Akira Tago ,  Satoshi Okada ,  Shinichi Takeda ,  Eiichi Takami ,  Masakazu Morishita ,  Chiori Mochizuki ,  Tadao Endo ,  Toshikazu Tamura

IPC分类号： G01J1/44 ,  G01T1/20 ,  H01L27/14 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0203 ,  H01L31/0232 ,  H01L31/042 ,  H01L31/09 ,  H01L31/14 ,  H04N1/028 ,  H04N1/04 ,  H04N5/335 ,  H05K3/30

CPC分类号： H01L27/14618 ,  H01L24/14 ,  H01L27/14634 ,  H01L31/0203 ,  H01L31/02322 ,  H01L27/14676 ,  H01L2924/12042 ,  H01L2924/351 ,  Y10T156/1077 ,  Y10T156/1092

摘要： In a photoelectric conversion apparatus obtained by arranging and fixing a plurality of semiconductor element substrates onto a base with an adhesive, the levels of the upper surfaces of the substrates are adjusted with a desired thickness of the adhesive so as to set the upper surfaces within the same plane while the distance from the upper surface of the base to the semiconductor element surface of each substrate is kept to a design value, thereby realizing a photoelectric conversion apparatus constituted by a plurality of substrates arranged two-dimensionally, which eliminates level gaps between the substrate, and hence is free from problems such as a decrease in resolution, a deterioration in sensitivity, and peeling of a phosphor and the like.

摘要翻译： 在通过使用粘合剂将多个半导体元件基板布置并固定到基底上而获得的光电转换装置中，以期望的粘合剂厚度调整基板的上表面的水平，以将上表面设置在 从基板的上表面到每个基板的半导体元件表面的距离保持相同的平面，从而实现由二维排列的多个基板构成的光电转换装置，从而消除了 基板，因此没有诸如分辨率降低，灵敏度劣化和荧光体剥离等问题。

公开(公告)号：US5777335A

公开(公告)日：1998-07-07

申请号：US721947

申请日：1996-09-27

申请人： Chiori Mochizuki ,  Akira Funakoshi ,  Akira Tago ,  Shinichi Takeda ,  Eiichi Takami ,  Masakazu Morishita ,  Shinichi Hayashi ,  Tadao Endo ,  Toshikazu Tamura

发明人： Chiori Mochizuki ,  Akira Funakoshi ,  Akira Tago ,  Shinichi Takeda ,  Eiichi Takami ,  Masakazu Morishita ,  Shinichi Hayashi ,  Tadao Endo ,  Toshikazu Tamura

IPC分类号： G01T1/20 ,  H01L27/14 ,  H01L27/146 ,  H04N5/32 ,  G01T1/29

CPC分类号： G01T1/2018

摘要： An imaging apparatus whose substrate or base stand is arranged to be a member to absorb or shield radiation in order to prevent semiconductor element, such as ICs, provided for driving photoelectric elements from making any malfunction or from being deteriorated by the irradiation of radiation, such as X-rays or .gamma.-rays, transmitted from the photoelectric conversion element substrate or base stand or in order to prevent radiation from being scattered.

摘要翻译： 一种成像装置，其基板或基座被布置为吸收或屏蔽辐射的部件，以便防止为驱动光电元件而导致的光电元件的半导体元件（例如IC）发生故障或由辐射照射而劣化 作为从光电转换元件基板或基座传送的X射线或γ射线，或者为了防止辐射被散射。

公开(公告)号：US6049074A

公开(公告)日：2000-04-11

申请号：US379630

申请日：1999-08-24

申请人： Tadao Endo ,  Akira Funakoshi ,  Akira Tago ,  Shinichi Takeda ,  Eiichi Takami ,  Masakazu Morishita ,  Shinichi Hayashi ,  Chiori Mochizuki ,  Toshikazu Tamura ,  Minoru Watanabe

发明人： Tadao Endo ,  Akira Funakoshi ,  Akira Tago ,  Shinichi Takeda ,  Eiichi Takami ,  Masakazu Morishita ,  Shinichi Hayashi ,  Chiori Mochizuki ,  Toshikazu Tamura ,  Minoru Watanabe

IPC分类号： G01T1/20 ,  H01J35/10 ,  H01L27/00 ,  H01L27/14 ,  H01L27/144 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/115 ,  H04N5/32

CPC分类号： H01L27/14663 ,  H01L27/1446 ,  H01L27/14618 ,  H01L27/14623 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14676 ,  H01L31/02 ,  H01L31/02322 ,  H01L31/024 ,  H01L31/085 ,  H01L31/115 ,  H01L2924/0002 ,  H04N5/32

摘要： In a photoelectric conversion device including peripheral ICs, the peripheral ICs are in thermal contact with a substrate having photoelectric conversion elements and a chassis, which covers the peripheral ICs and has high thermal conductivity, via a thermal conductive member, so as to eliminate adverse influences of heat produced by the peripheral ICs such as a low S/N ratio.

摘要翻译： 在包括外围IC的光电转换装置中，外围IC通过导热部件与具有光电转换元件的基板和底板热接触，该基板覆盖外围IC并具有高导热性，以消除不利影响 的外部IC产生的热量，例如低S / N比。

公开(公告)号：US5965872A

公开(公告)日：1999-10-12

申请号：US107283

申请日：1998-06-30

申请人： Tadao Endo ,  Akira Funakoshi ,  Akira Tago ,  Shinichi Takeda ,  Eiichi Takami ,  Masakazu Morishita ,  Shinichi Hayashi ,  Chiori Mochizuki ,  Toshikazu Tamura ,  Minoru Watanabe

发明人： Tadao Endo ,  Akira Funakoshi ,  Akira Tago ,  Shinichi Takeda ,  Eiichi Takami ,  Masakazu Morishita ,  Shinichi Hayashi ,  Chiori Mochizuki ,  Toshikazu Tamura ,  Minoru Watanabe

IPC分类号： G01T1/20 ,  H01J35/10 ,  H01L27/00 ,  H01L27/14 ,  H01L27/144 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/115 ,  H04N5/32

CPC分类号： H01L27/14663 ,  H01L27/1446 ,  H01L27/14618 ,  H01L27/14623 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14676 ,  H01L31/02 ,  H01L31/02322 ,  H01L31/024 ,  H01L31/085 ,  H01L31/115 ,  H01L2924/0002 ,  H04N5/32

摘要： In a photoelectric conversion device including peripheral ICs, the peripheral ICs are in thermal contact with a substrate having photoelectric conversion elements and a chassis, which covers the peripheral ICs and has high thermal conductivity, via a thermal conductive member, so as to eliminate adverse influences of heat produced by the peripheral ICs such as a low S/N ratio.

摘要翻译： 在包括外围IC的光电转换装置中，外围IC通过导热部件与具有光电转换元件的基板和底板热接触，该基板覆盖外围IC并具有高导热性，以消除不利影响 的外部IC产生的热量，例如低S / N比。

公开(公告)号：US5811790A

公开(公告)日：1998-09-22

申请号：US803106

申请日：1997-02-20

申请人： Tadao Endo ,  Akira Funakoshi ,  Akira Tago ,  Shinichi Takeda ,  Eiichi Takami ,  Masakazu Morishita ,  Shinichi Hayashi ,  Chiori Mochizuki ,  Toshikazu Tamura ,  Minoru Watanabe

发明人： Tadao Endo ,  Akira Funakoshi ,  Akira Tago ,  Shinichi Takeda ,  Eiichi Takami ,  Masakazu Morishita ,  Shinichi Hayashi ,  Chiori Mochizuki ,  Toshikazu Tamura ,  Minoru Watanabe

IPC分类号： G01T1/20 ,  H01J35/10 ,  H01L27/00 ,  H01L27/14 ,  H01L27/144 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/115 ,  H04N5/32

CPC分类号： H01L27/14663 ,  H01L27/1446 ,  H01L27/14618 ,  H01L27/14623 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14676 ,  H01L31/02 ,  H01L31/02322 ,  H01L31/024 ,  H01L31/085 ,  H01L31/115 ,  H01L2924/0002 ,  H04N5/32

摘要： In a photoelectric conversion device including peripheral ICs, the peripheral ICs are in thermal contact with a substrate having photoelectric conversion elements and a chassis, which covers the peripheral ICs and has high thermal conductivity, via a thermal conductive member, so as to eliminate adverse influences of heat produced by the peripheral ICs such as a low S/N ratio.

摘要翻译： 在包括外围IC的光电转换装置中，外围IC通过导热部件与具有光电转换元件的基板和底板热接触，该基板覆盖外围IC并具有高导热性，以消除不利影响 的外部IC产生的热量，例如低S / N比。

公开(公告)号：US5793047A

公开(公告)日：1998-08-11

申请号：US710948

申请日：1996-09-24

申请人： Isao Kobayashi ,  Akira Funakoshi ,  Akira Tago ,  Noriyuki Kaifu ,  Shinichi Takeda ,  Eiichi Takami ,  Masakazu Morishita ,  Shinichi Hayashi ,  Chiori Mochizuki ,  Tadao Endo ,  Toshikazu Tamura ,  Kazuaki Tashiro

发明人： Isao Kobayashi ,  Akira Funakoshi ,  Akira Tago ,  Noriyuki Kaifu ,  Shinichi Takeda ,  Eiichi Takami ,  Masakazu Morishita ,  Shinichi Hayashi ,  Chiori Mochizuki ,  Tadao Endo ,  Toshikazu Tamura ,  Kazuaki Tashiro

IPC分类号： G01J1/44 ,  G01T1/24 ,  H01L21/02 ,  H01L27/12 ,  H01L27/146 ,  H04N1/028 ,  H04N1/04 ,  H04N5/335 ,  H04N5/369 ,  H04N9/07 ,  G01T1/20

CPC分类号： H01L27/14609 ,  H01L27/14623 ,  H01L27/14663

摘要： A photoelectric conversion apparatus comprises a plurality of transparent substrates. Each of the substrates has a a plurality of photoelectric conversion elements on a front surface thereof on a base. A light-absorbing member is provided on at least one of a rear surface and end faces of the substrate.

摘要翻译： 光电转换装置包括多个透明基板。 每个基板在其前表面上具有多个光电转换元件。 光吸收构件设置在基板的后表面和端面中的至少一个上。

公开(公告)号：US06608312B1

公开(公告)日：2003-08-19

申请号：US09653010

申请日：2000-08-31

申请人： Satoshi Okada ,  Masakazu Morishita ,  Chiori Mochizuki

发明人： Satoshi Okada ,  Masakazu Morishita ,  Chiori Mochizuki

IPC分类号： G01T120

CPC分类号： H01L27/14663 ,  G01T1/20

摘要： In order to prevent a scintillator of an information reading apparatus from being broken in a bonding step, a protective layer is formed so as to cover the scintillator so that the shape of the scintillator is not broken.

摘要翻译： 为了防止信息读取装置的闪烁体在接合步骤中破裂，形成保护层以覆盖闪烁器，使得闪烁体的形状不破裂。

公开(公告)号：US06476867B1

公开(公告)日：2002-11-05

申请号：US08717628

申请日：1996-09-23

申请人： Isao Kobayashi ,  Noriyuki Kaifu ,  Shinichi Takeda ,  Masakazu Morishita ,  Tadao Endo

发明人： Isao Kobayashi ,  Noriyuki Kaifu ,  Shinichi Takeda ,  Masakazu Morishita ,  Tadao Endo

IPC分类号： H04N5335

CPC分类号： H04N5/32

摘要： In order to realize a photoelectric conversion apparatus capable of easily switching a mode requiring a wide dynamic range in obtaining a motion image and a mode requiring a reduction in noise in obtaining a still image, a mode switching means is used, when a refresh operation is performed for each photoelectric conversion element, to switch between a mode of setting the potential of one electrode of the photoelectric conversion element to be higher than the potential of the other electrode, and a mode of setting the potential of one electrode of the photoelectric conversion element to be lower than the potential of the other electrode, thereby arbitrarily changing the refresh voltage. With this operation, desired photoelectric conversion signals for a motion image and a still image can be obtained.

摘要翻译： 为了实现能够容易地切换在获得运动图像时需要宽动态范围的模式的光电转换装置以及在获得静止图像时需要降低噪声的模式，则使用模式切换装置，当刷新操作为 对于每个光电转换元件执行，以在将光电转换元件的一个电极的电位设置为高于另一个电极的电位的模式之间切换，以及设置光电转换元件的一个电极的电位的模式 低于另一个电极的电位，从而任意地改变刷新电压。 通过该操作，可以获得用于运动图像和静止图像的期望的光电转换信号。

公开(公告)号：US07750422B2

公开(公告)日：2010-07-06

申请号：US11685044

申请日：2007-03-12

申请人： Minoru Watanabe ,  Masakazu Morishita ,  Chiori Mochizuki ,  Takamasa Ishii ,  Keiichi Nomura

发明人： Minoru Watanabe ,  Masakazu Morishita ,  Chiori Mochizuki ,  Takamasa Ishii ,  Keiichi Nomura

IPC分类号： H01L31/0224

CPC分类号： H01L27/12 ,  H01L27/14643 ,  H04N5/32

摘要： In a solid state image pickup apparatus with a photodetecting device and one or more thin film transistors connected to the photodetecting device formed in one pixel, a part of the photodetecting device is formed over at least a part of the thin film transistor, and the thin film transistor is constructed by a source electrode, a drain electrode, a first gate electrode, and a second gate electrode arranged on the side opposite to the first gate electrode with respect to the source electrode and the drain electrode, and the first gate electrode is connected to the second gate electrode every pixel, thereby, suppressing an adverse effect of the photodetecting device on the TFT, a leakage at turn-off TFT, variation in a threshold voltage of the TFT due to an external electric field, and accurately transferring photo carrier to a signal processing circuit.

摘要翻译： 在具有与一个像素形成的受光器件连接的受光器件和一个以上的薄膜晶体管的固态摄像装置中，在所述薄膜晶体管的至少一部分上形成有所述受光器件的一部分， 薄膜晶体管由源电极，漏电极，第一栅电极和第二栅电极构成，第二栅电极相对于源电极和漏极布置在与第一栅电极相反的一侧，第一栅极为 连接到每个像素的第二栅电极，从而抑制光检测器件对TFT的不利影响，关断TFT处的泄漏，由于外部电场引起的TFT的阈值电压的变化，以及精确地传输照片 载波到信号处理电路。