公开(公告)号：US6049074A

公开(公告)日：2000-04-11

申请号：US379630

申请日：1999-08-24

申请人： Tadao Endo ,  Akira Funakoshi ,  Akira Tago ,  Shinichi Takeda ,  Eiichi Takami ,  Masakazu Morishita ,  Shinichi Hayashi ,  Chiori Mochizuki ,  Toshikazu Tamura ,  Minoru Watanabe

发明人： Tadao Endo ,  Akira Funakoshi ,  Akira Tago ,  Shinichi Takeda ,  Eiichi Takami ,  Masakazu Morishita ,  Shinichi Hayashi ,  Chiori Mochizuki ,  Toshikazu Tamura ,  Minoru Watanabe

IPC分类号： G01T1/20 ,  H01J35/10 ,  H01L27/00 ,  H01L27/14 ,  H01L27/144 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/115 ,  H04N5/32

CPC分类号： H01L27/14663 ,  H01L27/1446 ,  H01L27/14618 ,  H01L27/14623 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14676 ,  H01L31/02 ,  H01L31/02322 ,  H01L31/024 ,  H01L31/085 ,  H01L31/115 ,  H01L2924/0002 ,  H04N5/32

摘要： In a photoelectric conversion device including peripheral ICs, the peripheral ICs are in thermal contact with a substrate having photoelectric conversion elements and a chassis, which covers the peripheral ICs and has high thermal conductivity, via a thermal conductive member, so as to eliminate adverse influences of heat produced by the peripheral ICs such as a low S/N ratio.

摘要翻译： 在包括外围IC的光电转换装置中，外围IC通过导热部件与具有光电转换元件的基板和底板热接触，该基板覆盖外围IC并具有高导热性，以消除不利影响 的外部IC产生的热量，例如低S / N比。

公开(公告)号：US5965872A

公开(公告)日：1999-10-12

申请号：US107283

申请日：1998-06-30

申请人： Tadao Endo ,  Akira Funakoshi ,  Akira Tago ,  Shinichi Takeda ,  Eiichi Takami ,  Masakazu Morishita ,  Shinichi Hayashi ,  Chiori Mochizuki ,  Toshikazu Tamura ,  Minoru Watanabe

发明人： Tadao Endo ,  Akira Funakoshi ,  Akira Tago ,  Shinichi Takeda ,  Eiichi Takami ,  Masakazu Morishita ,  Shinichi Hayashi ,  Chiori Mochizuki ,  Toshikazu Tamura ,  Minoru Watanabe

IPC分类号： G01T1/20 ,  H01J35/10 ,  H01L27/00 ,  H01L27/14 ,  H01L27/144 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/115 ,  H04N5/32

CPC分类号： H01L27/14663 ,  H01L27/1446 ,  H01L27/14618 ,  H01L27/14623 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14676 ,  H01L31/02 ,  H01L31/02322 ,  H01L31/024 ,  H01L31/085 ,  H01L31/115 ,  H01L2924/0002 ,  H04N5/32

摘要： In a photoelectric conversion device including peripheral ICs, the peripheral ICs are in thermal contact with a substrate having photoelectric conversion elements and a chassis, which covers the peripheral ICs and has high thermal conductivity, via a thermal conductive member, so as to eliminate adverse influences of heat produced by the peripheral ICs such as a low S/N ratio.

摘要翻译： 在包括外围IC的光电转换装置中，外围IC通过导热部件与具有光电转换元件的基板和底板热接触，该基板覆盖外围IC并具有高导热性，以消除不利影响 的外部IC产生的热量，例如低S / N比。

公开(公告)号：US5811790A

公开(公告)日：1998-09-22

申请号：US803106

申请日：1997-02-20

申请人： Tadao Endo ,  Akira Funakoshi ,  Akira Tago ,  Shinichi Takeda ,  Eiichi Takami ,  Masakazu Morishita ,  Shinichi Hayashi ,  Chiori Mochizuki ,  Toshikazu Tamura ,  Minoru Watanabe

发明人： Tadao Endo ,  Akira Funakoshi ,  Akira Tago ,  Shinichi Takeda ,  Eiichi Takami ,  Masakazu Morishita ,  Shinichi Hayashi ,  Chiori Mochizuki ,  Toshikazu Tamura ,  Minoru Watanabe

IPC分类号： G01T1/20 ,  H01J35/10 ,  H01L27/00 ,  H01L27/14 ,  H01L27/144 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/115 ,  H04N5/32

CPC分类号： H01L27/14663 ,  H01L27/1446 ,  H01L27/14618 ,  H01L27/14623 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14676 ,  H01L31/02 ,  H01L31/02322 ,  H01L31/024 ,  H01L31/085 ,  H01L31/115 ,  H01L2924/0002 ,  H04N5/32

摘要： In a photoelectric conversion device including peripheral ICs, the peripheral ICs are in thermal contact with a substrate having photoelectric conversion elements and a chassis, which covers the peripheral ICs and has high thermal conductivity, via a thermal conductive member, so as to eliminate adverse influences of heat produced by the peripheral ICs such as a low S/N ratio.

摘要翻译： 在包括外围IC的光电转换装置中，外围IC通过导热部件与具有光电转换元件的基板和底板热接触，该基板覆盖外围IC并具有高导热性，以消除不利影响 的外部IC产生的热量，例如低S / N比。

公开(公告)号：US5777335A

公开(公告)日：1998-07-07

申请号：US721947

申请日：1996-09-27

申请人： Chiori Mochizuki ,  Akira Funakoshi ,  Akira Tago ,  Shinichi Takeda ,  Eiichi Takami ,  Masakazu Morishita ,  Shinichi Hayashi ,  Tadao Endo ,  Toshikazu Tamura

发明人： Chiori Mochizuki ,  Akira Funakoshi ,  Akira Tago ,  Shinichi Takeda ,  Eiichi Takami ,  Masakazu Morishita ,  Shinichi Hayashi ,  Tadao Endo ,  Toshikazu Tamura

IPC分类号： G01T1/20 ,  H01L27/14 ,  H01L27/146 ,  H04N5/32 ,  G01T1/29

CPC分类号： G01T1/2018

摘要： An imaging apparatus whose substrate or base stand is arranged to be a member to absorb or shield radiation in order to prevent semiconductor element, such as ICs, provided for driving photoelectric elements from making any malfunction or from being deteriorated by the irradiation of radiation, such as X-rays or .gamma.-rays, transmitted from the photoelectric conversion element substrate or base stand or in order to prevent radiation from being scattered.

摘要翻译： 一种成像装置，其基板或基座被布置为吸收或屏蔽辐射的部件，以便防止为驱动光电元件而导致的光电元件的半导体元件（例如IC）发生故障或由辐射照射而劣化 作为从光电转换元件基板或基座传送的X射线或γ射线，或者为了防止辐射被散射。

公开(公告)号：US06352875B1

公开(公告)日：2002-03-05

申请号：US09176258

申请日：1998-10-21

申请人： Shinichi Hayashi ,  Akira Funakoshi ,  Akira Tago ,  Satoshi Okada ,  Shinichi Takeda ,  Eiichi Takami ,  Masakazu Morishita ,  Chiori Mochizuki ,  Tadao Endo ,  Toshikazu Tamura

发明人： Shinichi Hayashi ,  Akira Funakoshi ,  Akira Tago ,  Satoshi Okada ,  Shinichi Takeda ,  Eiichi Takami ,  Masakazu Morishita ,  Chiori Mochizuki ,  Tadao Endo ,  Toshikazu Tamura

IPC分类号： H01L310203

CPC分类号： H01L27/14618 ,  H01L24/14 ,  H01L27/14634 ,  H01L27/14676 ,  H01L31/0203 ,  H01L31/02322 ,  H01L2924/12042 ,  H01L2924/351 ,  Y10T156/1077 ,  Y10T156/1092 ,  H01L2924/00

摘要： In a photoelectric conversion apparatus obtained by arranging and fixing a plurality of semiconductor element substrates onto a base with an adhesive, the levels of the upper surfaces of the substrates are adjusted with a desired thickness of the adhesive so as to set the upper surfaces within the same plane while the distance from the upper surface of the base to the semiconductor element surface of each substrate is kept to a design value, thereby realizing a photoelectric conversion apparatus constituted by a plurality of substrates arranged two-dimensionally, which eliminates level gaps between the substrates, and hence is free from problems such as a decrease in resolution, a deterioration in sensitivity, and peeling of a phosphor and the like.

摘要翻译： 在通过使用粘合剂将多个半导体元件基板布置并固定到基底上而获得的光电转换装置中，以期望的粘合剂厚度调整基板的上表面的水平，以将上表面设置在 从基板的上表面到每个基板的半导体元件表面的距离保持相同的平面，从而实现由二维排列的多个基板构成的光电转换装置，从而消除了 基板，因此没有诸如分辨率降低，灵敏度降低和荧光体剥离等问题。

公开(公告)号：US5856699A

公开(公告)日：1999-01-05

申请号：US733772

申请日：1996-10-18

申请人： Shinichi Hayashi ,  Akira Funakoshi ,  Akira Tago ,  Satoshi Okada ,  Shinichi Takeda ,  Eiichi Takami ,  Masakazu Morishita ,  Chiori Mochizuki ,  Tadao Endo ,  Toshikazu Tamura

发明人： Shinichi Hayashi ,  Akira Funakoshi ,  Akira Tago ,  Satoshi Okada ,  Shinichi Takeda ,  Eiichi Takami ,  Masakazu Morishita ,  Chiori Mochizuki ,  Tadao Endo ,  Toshikazu Tamura

IPC分类号： G01J1/44 ,  G01T1/20 ,  H01L27/14 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0203 ,  H01L31/0232 ,  H01L31/042 ,  H01L31/09 ,  H01L31/14 ,  H04N1/028 ,  H04N1/04 ,  H04N5/335 ,  H05K3/30

CPC分类号： H01L27/14618 ,  H01L24/14 ,  H01L27/14634 ,  H01L31/0203 ,  H01L31/02322 ,  H01L27/14676 ,  H01L2924/12042 ,  H01L2924/351 ,  Y10T156/1077 ,  Y10T156/1092

摘要： In a photoelectric conversion apparatus obtained by arranging and fixing a plurality of semiconductor element substrates onto a base with an adhesive, the levels of the upper surfaces of the substrates are adjusted with a desired thickness of the adhesive so as to set the upper surfaces within the same plane while the distance from the upper surface of the base to the semiconductor element surface of each substrate is kept to a design value, thereby realizing a photoelectric conversion apparatus constituted by a plurality of substrates arranged two-dimensionally, which eliminates level gaps between the substrate, and hence is free from problems such as a decrease in resolution, a deterioration in sensitivity, and peeling of a phosphor and the like.

摘要翻译： 在通过使用粘合剂将多个半导体元件基板布置并固定到基底上而获得的光电转换装置中，以期望的粘合剂厚度调整基板的上表面的水平，以将上表面设置在 从基板的上表面到每个基板的半导体元件表面的距离保持相同的平面，从而实现由二维排列的多个基板构成的光电转换装置，从而消除了 基板，因此没有诸如分辨率降低，灵敏度劣化和荧光体剥离等问题。

公开(公告)号：US5793047A

公开(公告)日：1998-08-11

申请号：US710948

申请日：1996-09-24

申请人： Isao Kobayashi ,  Akira Funakoshi ,  Akira Tago ,  Noriyuki Kaifu ,  Shinichi Takeda ,  Eiichi Takami ,  Masakazu Morishita ,  Shinichi Hayashi ,  Chiori Mochizuki ,  Tadao Endo ,  Toshikazu Tamura ,  Kazuaki Tashiro

发明人： Isao Kobayashi ,  Akira Funakoshi ,  Akira Tago ,  Noriyuki Kaifu ,  Shinichi Takeda ,  Eiichi Takami ,  Masakazu Morishita ,  Shinichi Hayashi ,  Chiori Mochizuki ,  Tadao Endo ,  Toshikazu Tamura ,  Kazuaki Tashiro

IPC分类号： G01J1/44 ,  G01T1/24 ,  H01L21/02 ,  H01L27/12 ,  H01L27/146 ,  H04N1/028 ,  H04N1/04 ,  H04N5/335 ,  H04N5/369 ,  H04N9/07 ,  G01T1/20

CPC分类号： H01L27/14609 ,  H01L27/14623 ,  H01L27/14663

摘要： A photoelectric conversion apparatus comprises a plurality of transparent substrates. Each of the substrates has a a plurality of photoelectric conversion elements on a front surface thereof on a base. A light-absorbing member is provided on at least one of a rear surface and end faces of the substrate.

摘要翻译： 光电转换装置包括多个透明基板。 每个基板在其前表面上具有多个光电转换元件。 光吸收构件设置在基板的后表面和端面中的至少一个上。

公开(公告)号：US07750422B2

公开(公告)日：2010-07-06

申请号：US11685044

申请日：2007-03-12

申请人： Minoru Watanabe ,  Masakazu Morishita ,  Chiori Mochizuki ,  Takamasa Ishii ,  Keiichi Nomura

发明人： Minoru Watanabe ,  Masakazu Morishita ,  Chiori Mochizuki ,  Takamasa Ishii ,  Keiichi Nomura

IPC分类号： H01L31/0224

CPC分类号： H01L27/12 ,  H01L27/14643 ,  H04N5/32

摘要： In a solid state image pickup apparatus with a photodetecting device and one or more thin film transistors connected to the photodetecting device formed in one pixel, a part of the photodetecting device is formed over at least a part of the thin film transistor, and the thin film transistor is constructed by a source electrode, a drain electrode, a first gate electrode, and a second gate electrode arranged on the side opposite to the first gate electrode with respect to the source electrode and the drain electrode, and the first gate electrode is connected to the second gate electrode every pixel, thereby, suppressing an adverse effect of the photodetecting device on the TFT, a leakage at turn-off TFT, variation in a threshold voltage of the TFT due to an external electric field, and accurately transferring photo carrier to a signal processing circuit.

摘要翻译： 在具有与一个像素形成的受光器件连接的受光器件和一个以上的薄膜晶体管的固态摄像装置中，在所述薄膜晶体管的至少一部分上形成有所述受光器件的一部分， 薄膜晶体管由源电极，漏电极，第一栅电极和第二栅电极构成，第二栅电极相对于源电极和漏极布置在与第一栅电极相反的一侧，第一栅极为 连接到每个像素的第二栅电极，从而抑制光检测器件对TFT的不利影响，关断TFT处的泄漏，由于外部电场引起的TFT的阈值电压的变化，以及精确地传输照片 载波到信号处理电路。

公开(公告)号：US20090185659A1

公开(公告)日：2009-07-23

申请号：US12349733

申请日：2009-01-07

申请人： Takamasa Ishii ,  Masakazu Morishita ,  Chiori Mochizuki ,  Minoru Watanabe ,  Keiichi Nomura

发明人： Takamasa Ishii ,  Masakazu Morishita ,  Chiori Mochizuki ,  Minoru Watanabe ,  Keiichi Nomura

IPC分类号： H05G1/58 ,  G01J1/44 ,  G01T1/24

CPC分类号： H04N5/3745 ,  H01L27/14632 ,  H01L27/14658 ,  H01L27/14663 ,  H04N5/35527

摘要： Sensitivity is freely changeable to another one in correspondence to a photographing mode, and both still image photographing and moving image photographing for example which are largely different from each other in dosage of exposure to radiation and which are also different from each other in required sensitivity are carried out so as to meet that request. A source or drain electrode of a TFT 21 is connected to a signal output circuit 3 through a signal line 14a and an IC 5. A source/drain of a TFT 23 is connected to the signal output circuit 3 through a signal line 14b and the IC 5. Thus, in each pixel 6, any one of the signal lines 14a and 14b is freely selectable when a signal is read out.

摘要翻译： 灵敏度可自由地变化为与拍摄模式相对应的灵敏度，并且静止图像拍摄和例如在暴露于辐射的剂量中彼此大不相同并且在所需灵敏度上彼此不同的动态图像拍摄中， 进行，以满足这一要求。 TFT21的源极或漏极通过信号线14a和IC5连接到信号输出电路3. TFT 23的源极/漏极通过信号线14b连接到信号输出电路3，并且 因此，在每个像素6中，当读出信号时，信号线14a和14b中的任何一个可以自由地选择。

公开(公告)号：US20090040310A1

公开(公告)日：2009-02-12

申请号：US12245391

申请日：2008-10-03

申请人： Keiichi Nomura ,  Masakazu Morishita ,  Chiori Mochizuki ,  Minoru Watanabe ,  Takamasa Ishii

发明人： Keiichi Nomura ,  Masakazu Morishita ,  Chiori Mochizuki ,  Minoru Watanabe ,  Takamasa Ishii

IPC分类号： H04N5/335

CPC分类号： H04N5/32 ,  H01L27/14603 ,  H01L27/14658

摘要： A solid-state image pickup device according to the present invention has a plurality of photoelectric conversion elements and a plurality of switching elements. The photoelectric conversion element is formed above at least one switching element, and a shielding electrode layer is disposed between the switching elements and the photoelectric conversion elements. Further, a radiation image pickup device according to the present invention has a radiation conversion layer for directly converting radiation into electric charges, and a plurality of switching elements, and has the radiation conversion layer formed above one or more switching elements, and a shielding electrode layer disposed between the switching elements and the radiation conversion layer.

摘要翻译： 根据本发明的固态图像拾取装置具有多个光电转换元件和多个开关元件。 光电转换元件形成在至少一个开关元件上方，并且屏蔽电极层设置在开关元件和光电转换元件之间。 此外，根据本发明的放射线摄像装置具有用于将辐射直接转换为电荷的辐射转换层和多个开关元件，并且具有形成在一个或多个开关元件上方的辐射转换层和屏蔽电极 层之间设置在开关元件和辐射转换层之间。