摘要:
In a photoelectric conversion apparatus obtained by arranging and fixing a plurality of semiconductor element substrates onto a base with an adhesive, the levels of the upper surfaces of the substrates are adjusted with a desired thickness of the adhesive so as to set the upper surfaces within the same plane while the distance from the upper surface of the base to the semiconductor element surface of each substrate is kept to a design value, thereby realizing a photoelectric conversion apparatus constituted by a plurality of substrates arranged two-dimensionally, which eliminates level gaps between the substrates, and hence is free from problems such as a decrease in resolution, a deterioration in sensitivity, and peeling of a phosphor and the like.
摘要:
In a photoelectric conversion apparatus obtained by arranging and fixing a plurality of semiconductor element substrates onto a base with an adhesive, the levels of the upper surfaces of the substrates are adjusted with a desired thickness of the adhesive so as to set the upper surfaces within the same plane while the distance from the upper surface of the base to the semiconductor element surface of each substrate is kept to a design value, thereby realizing a photoelectric conversion apparatus constituted by a plurality of substrates arranged two-dimensionally, which eliminates level gaps between the substrate, and hence is free from problems such as a decrease in resolution, a deterioration in sensitivity, and peeling of a phosphor and the like.
摘要:
An imaging apparatus whose substrate or base stand is arranged to be a member to absorb or shield radiation in order to prevent semiconductor element, such as ICs, provided for driving photoelectric elements from making any malfunction or from being deteriorated by the irradiation of radiation, such as X-rays or .gamma.-rays, transmitted from the photoelectric conversion element substrate or base stand or in order to prevent radiation from being scattered.
摘要:
In a photoelectric conversion device including peripheral ICs, the peripheral ICs are in thermal contact with a substrate having photoelectric conversion elements and a chassis, which covers the peripheral ICs and has high thermal conductivity, via a thermal conductive member, so as to eliminate adverse influences of heat produced by the peripheral ICs such as a low S/N ratio.
摘要:
In a photoelectric conversion device including peripheral ICs, the peripheral ICs are in thermal contact with a substrate having photoelectric conversion elements and a chassis, which covers the peripheral ICs and has high thermal conductivity, via a thermal conductive member, so as to eliminate adverse influences of heat produced by the peripheral ICs such as a low S/N ratio.
摘要:
In a photoelectric conversion device including peripheral ICs, the peripheral ICs are in thermal contact with a substrate having photoelectric conversion elements and a chassis, which covers the peripheral ICs and has high thermal conductivity, via a thermal conductive member, so as to eliminate adverse influences of heat produced by the peripheral ICs such as a low S/N ratio.
摘要:
A photoelectric conversion apparatus comprises a plurality of transparent substrates. Each of the substrates has a a plurality of photoelectric conversion elements on a front surface thereof on a base. A light-absorbing member is provided on at least one of a rear surface and end faces of the substrate.
摘要:
In order to prevent a scintillator of an information reading apparatus from being broken in a bonding step, a protective layer is formed so as to cover the scintillator so that the shape of the scintillator is not broken.
摘要:
In order to realize a photoelectric conversion apparatus capable of easily switching a mode requiring a wide dynamic range in obtaining a motion image and a mode requiring a reduction in noise in obtaining a still image, a mode switching means is used, when a refresh operation is performed for each photoelectric conversion element, to switch between a mode of setting the potential of one electrode of the photoelectric conversion element to be higher than the potential of the other electrode, and a mode of setting the potential of one electrode of the photoelectric conversion element to be lower than the potential of the other electrode, thereby arbitrarily changing the refresh voltage. With this operation, desired photoelectric conversion signals for a motion image and a still image can be obtained.
摘要:
In a solid state image pickup apparatus with a photodetecting device and one or more thin film transistors connected to the photodetecting device formed in one pixel, a part of the photodetecting device is formed over at least a part of the thin film transistor, and the thin film transistor is constructed by a source electrode, a drain electrode, a first gate electrode, and a second gate electrode arranged on the side opposite to the first gate electrode with respect to the source electrode and the drain electrode, and the first gate electrode is connected to the second gate electrode every pixel, thereby, suppressing an adverse effect of the photodetecting device on the TFT, a leakage at turn-off TFT, variation in a threshold voltage of the TFT due to an external electric field, and accurately transferring photo carrier to a signal processing circuit.