公开(公告)号：US10326920B2

公开(公告)日：2019-06-18

申请号：US16040145

申请日：2018-07-19

Applicant: SONY CORPORATION

Inventor： Yoshiaki Masuda ,  Yuki Miyanami ,  Hideshi Abe ,  Tomoyuki Hirano ,  Masanari Yamaguchi ,  Yoshiki Ebiko ,  Kazufumi Watanabe ,  Tomoharu Ogita

IPC: H04N5/225 ,  G02B1/118 ,  H01L27/146 ,  H01L31/0232 ,  H04N5/369 ,  H01L31/10 ,  H04N5/359 ,  H04N5/374 ,  H04N9/04

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

公开(公告)号：US20180301499A1

公开(公告)日：2018-10-18

申请号：US16014129

申请日：2018-06-21

Applicant: Sony Corporation

Inventor： Keiji Mabuchi ,  Hideshi Abe ,  Hideo Kanbe ,  Shiro Uchida

IPC: H01L27/146 ,  G01J5/20 ,  G01J3/36 ,  G01J3/28 ,  H01L27/30

Abstract: A solid-state imaging device includes an Si substrate in which a photoelectric conversion unit that photoelectrically converts visible light incident from a back surface side is formed, and a lower substrate provided under the Si substrate and configured to photoelectrically convert infrared light incident from the back surface side.

公开(公告)号：US09831284B2

公开(公告)日：2017-11-28

申请号：US15054677

申请日：2016-02-26

Applicant: Sony Corporation

Inventor： Keiji Mabuchi ,  Hideshi Abe ,  Hideo Kanbe ,  Shiro Uchida

IPC: H01L27/146 ,  G01J5/20 ,  G01J3/28 ,  G01J3/36

CPC classification number: H01L27/14652 ,  G01J3/2803 ,  G01J3/36 ,  G01J5/20 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14647 ,  H01L27/14649 ,  H01L27/14683 ,  H01L27/14687 ,  H01L27/1469 ,  H01L27/30 ,  H01L27/307

Abstract: A solid-state imaging device includes an Si substrate in which a photoelectric conversion unit that photoelectrically converts visible light incident from a back surface side is formed, and a lower substrate provided under the Si substrate and configured to photoelectrically convert infrared light incident from the back surface side.

公开(公告)号：US09794457B2

公开(公告)日：2017-10-17

申请号：US14891947

申请日：2014-06-20

Applicant: SONY CORPORATION

Inventor： Yoshiaki Masuda ,  Yuki Miyanami ,  Hideshi Abe ,  Tomoyuki Hirano ,  Masanari Yamaguchi ,  Yoshiki Ebiko ,  Kazufumi Watanabe ,  Tomoharu Ogita

IPC: H04N5/225 ,  G02B1/11 ,  H01L27/146 ,  H01L31/0232 ,  H04N5/369 ,  G02B1/118

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

公开(公告)号：US09264631B2

公开(公告)日：2016-02-16

申请号：US14394658

申请日：2013-04-17

Applicant: Sony Corporation

Inventor： Kojiro Yagami ,  Hideshi Abe ,  Tatsushiro Hirata

IPC: H01L25/00 ,  H04N5/33 ,  G02F1/35 ,  H04N17/00 ,  G01J5/04 ,  G01J5/58 ,  G01J5/08 ,  H01L27/146 ,  G01J5/00

CPC classification number: H04N5/33 ,  G01J5/00 ,  G01J5/046 ,  G01J5/0853 ,  G01J5/58 ,  G01J2005/0077 ,  G02F1/353 ,  G02F2202/36 ,  G02F2203/11 ,  G02F2203/12 ,  H01L27/14649 ,  H04N17/002

Abstract: An infrared conversion device includes: a substrate (122); and a metal fine particle layer (123) formed on the substrate (122), wherein the metal fine particle layer (123) is formed with metal fine particles (124) and a dielectric material (125) that fills gaps between the metal fine particles (124) and absorbs incident infrared rays. Alternatively, an infrared conversion device detects infrared rays converted into visible light by detecting a change caused in the permittivity of a light receiving material (125) by infrared absorption as a change in the intensity of scattering light based on local plasmon resonance.

Abstract translation: 红外线转换装置包括：基板（122）; 和形成在基板（122）上的金属微粒子层（123），其中金属微粒层（123）形成有金属微粒（124）和填充金属微粒之间的间隙的电介质材料（125） （124）并吸收入射的红外线。 或者，红外线转换装置通过基于局部等离子体共振来检测通过红外线吸收的受光材料（125）的介电常数的变化作为散射光的强度的变化，来检测被变换为可见光的红外线。

公开(公告)号：US20150069237A1

公开(公告)日：2015-03-12

申请号：US14394658

申请日：2013-04-17

Applicant: Sony Corporation

Inventor： Kojiro Yagami ,  Hideshi Abe ,  Tatsushiro Hirata

IPC: H04N5/33 ,  G01J5/00

CPC classification number: H04N5/33 ,  G01J5/00 ,  G01J5/046 ,  G01J5/0853 ,  G01J5/58 ,  G01J2005/0077 ,  G02F1/353 ,  G02F2202/36 ,  G02F2203/11 ,  G02F2203/12 ,  H01L27/14649 ,  H04N17/002

Abstract: An infrared conversion device includes: a substrate (122); and a metal fine particle layer (123) formed on the substrate (122), wherein the metal fine particle layer (123) is formed with metal fine particles (124) and a dielectric material (125) that fills gaps between the metal fine particles (124) and absorbs incident infrared rays. Alternatively, an infrared conversion device detects infrared rays converted into visible light by detecting a change caused in the permittivity of a light receiving material (125) by infrared absorption as a change in the intensity of scattering light based on local plasmon resonance.

Abstract translation: 红外线转换装置包括：基板（122）; 和形成在基板（122）上的金属微粒子层（123），其中金属微粒层（123）形成有金属微粒（124）和填充金属微粒之间的间隙的电介质材料（125） （124）并吸收入射的红外线。 或者，红外线转换装置通过基于局部等离子体共振来检测通过红外线吸收的受光材料（125）的介电常数的变化作为散射光的强度的变化，来检测被变换为可见光的红外线。

公开(公告)号：US10771664B2

公开(公告)日：2020-09-08

申请号：US16251531

申请日：2019-01-18

Applicant: SONY CORPORATION

Inventor： Yoshiaki Masuda ,  Yuki Miyanami ,  Hideshi Abe ,  Tomoyuki Hirano ,  Masanari Yamaguchi ,  Yoshiki Ebiko ,  Kazufumi Watanabe ,  Tomoharu Ogita

IPC: H04N5/225 ,  G02B1/118 ,  H01L27/146 ,  H04N5/369 ,  H01L31/0232 ,  H04N5/359 ,  H04N5/374 ,  H04N9/04 ,  H01L31/0203 ,  H01L31/10

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

公开(公告)号：US10147755B2

公开(公告)日：2018-12-04

申请号：US15784793

申请日：2017-10-16

Applicant: Sony Corporation

Inventor： Keiji Mabuchi ,  Hideshi Abe ,  Hideo Kanbe ,  Shiro Uchida

IPC: H01L27/146 ,  H01L27/30 ,  G01J5/20 ,  G01J3/28 ,  G01J3/36

Abstract: A solid-state imaging device includes an Si substrate in which a photoelectric conversion unit that photoelectrically converts visible light incident from a back surface side is formed, and a lower substrate provided under the Si substrate and configured to photoelectrically convert infrared light incident from the back surface side.

公开(公告)号：US10044918B2

公开(公告)日：2018-08-07

申请号：US15720993

申请日：2017-09-29

Applicant: SONY CORPORATION

Inventor： Yoshiaki Masuda ,  Yuki Miyanami ,  Hideshi Abe ,  Tomoyuki Hirano ,  Masanari Yamaguchi ,  Yoshiki Ebiko ,  Kazufumi Watanabe ,  Tomoharu Ogita

IPC: H04N5/225 ,  H04N5/369 ,  H01L27/146 ,  H01L31/0232 ,  G02B1/118

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

公开(公告)号：US09819846B2

公开(公告)日：2017-11-14

申请号：US14891947

申请日：2014-06-20

Applicant: SONY CORPORATION

Inventor： Yoshiaki Masuda ,  Yuki Miyanami ,  Hideshi Abe ,  Tomoyuki Hirano ,  Masanari Yamaguchi ,  Yoshiki Ebiko ,  Kazufumi Watanabe ,  Tomoharu Ogita

IPC: H04N5/225 ,  G02B1/11 ,  H01L27/146 ,  H01L31/0232 ,  H04N5/369 ,  G02B1/118

CPC classification number: H04N5/2254 ,  G02B1/118 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/1464 ,  H01L31/02327 ,  H01L31/10 ,  H04N5/359 ,  H04N5/369 ,  H04N5/3696 ,  H04N5/374 ,  H04N9/04

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.