-
公开(公告)号：US20150236196A1
公开(公告)日：2015-08-20
申请号：US14703767
申请日：2015-05-04
Applicant: Soraa Laser Diode, Inc.
Inventor： Nicholas J. Pfister , James W. Raring , Mathew Schmidt
CPC classification number: H01L33/0095 , H01L29/20 , H01L33/0075 , H01L33/32 , H01L2933/0066 , H01S5/0014 , H01S5/0202 , H01S5/0203 , H01S5/0421 , H01S5/2013 , H01S5/3013 , H01S5/3202 , H01S5/32341
Abstract: A method for forming optical devices. The method includes providing a gallium nitride substrate member having a crystalline surface region and a backside region. The method also includes subjecting the backside region to a laser scribing process to form a plurality of scribe regions on the backside region and forming a metallization material overlying the backside region including the plurality of scribe regions. The method removes at least one optical device using at least one of the scribe regions.
Abstract translation: 一种形成光学器件的方法。 该方法包括提供具有结晶表面区域和背面区域的氮化镓衬底构件。 该方法还包括使背面区域进行激光划线工艺以在背面区域上形成多个划线区域，并形成覆盖包括多个划线区域的背面区域的金属化材料。 该方法使用至少一个划线区域去除至少一个光学装置。
-
公开(公告)号：US20180097337A1
公开(公告)日：2018-04-05
申请号：US15820047
申请日：2017-11-21
Applicant: Soraa Laser Diode, Inc.
Inventor： James W. Raring , Mathew Schmidt , Christiane Poblenz
IPC: H01S5/343 , H01S5/227 , H01S5/20 , B82Y20/00 , H01S5/32 , H01S5/34 , H01S5/02 , H01S5/028 , H01S5/00 , H01S5/40
CPC classification number: H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0202 , H01S5/028 , H01S5/2009 , H01S5/227 , H01S5/3202 , H01S5/3213 , H01S5/3407 , H01S5/4025
Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
-
公开(公告)号：US10424900B2
公开(公告)日：2019-09-24
申请号：US16144328
申请日：2018-09-27
Applicant: Soraa Laser Diode, Inc.
Inventor： James W. Raring , Mathew Schmidt , Christiane Poblenz
IPC: H01S5/343 , H01S5/34 , H01L21/02 , B82Y20/00 , H01S5/20 , H01S5/32 , H01S5/227 , B28D5/00 , H01L21/467 , H01S5/00 , H01S5/02 , H01S5/028 , H01S5/40
Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
-
公开(公告)号：US09786810B2
公开(公告)日：2017-10-10
申请号：US14703767
申请日：2015-05-04
Applicant: Soraa Laser Diode, Inc.
Inventor： Nicholas J. Pfister , James W. Raring , Mathew Schmidt
CPC classification number: H01L33/0095 , H01L29/20 , H01L33/0075 , H01L33/32 , H01L2933/0066 , H01S5/0014 , H01S5/0202 , H01S5/0203 , H01S5/0421 , H01S5/2013 , H01S5/3013 , H01S5/3202 , H01S5/32341
Abstract: A method for forming optical devices. The method includes providing a gallium nitride substrate member having a crystalline surface region and a backside region. The method also includes subjecting the backside region to a laser scribing process to form a plurality of scribe regions on the backside region and forming a metallization material overlying the backside region including the plurality of scribe regions. The method removes at least one optical device using at least one of the scribe regions.
-
公开(公告)号：US20200091684A1
公开(公告)日：2020-03-19
申请号：US16579252
申请日：2019-09-23
Applicant: Soraa Laser Diode, Inc.
Inventor： James W. Raring , Mathew Schmidt , Christiane Poblenz
Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
-
Patent Agency Ranking
公开(公告)号：US20190103728A1
公开(公告)日：2019-04-04
申请号：US16144328
申请日：2018-09-27
Applicant: Soraa Laser Diode, Inc.
Inventor： James W. Raring , Mathew Schmidt , Christiane Poblenz
IPC: H01S5/343 , B82Y20/00 , H01S5/34 , H01S5/32 , H01S5/20 , H01S5/227 , H01S5/40 , H01S5/02 , H01S5/00 , H01S5/028
CPC classification number: H01S5/34333 , B28D5/0011 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/467 , H01S5/0014 , H01S5/0202 , H01S5/028 , H01S5/2009 , H01S5/227 , H01S5/3202 , H01S5/3213 , H01S5/3407 , H01S5/4025
Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
-
公开(公告)号：US10090644B2
公开(公告)日：2018-10-02
申请号：US15820047
申请日：2017-11-21
Applicant: Soraa Laser Diode, Inc.
Inventor： James W. Raring , Mathew Schmidt , Christiane Poblenz
IPC: H01S5/34 , H01S5/343 , H01S5/20 , H01S5/227 , B82Y20/00 , H01S5/00 , H01S5/02 , H01S5/028 , H01S5/32 , H01S5/40
Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
-
公开(公告)号：US09853420B2
公开(公告)日：2017-12-26
申请号：US15363756
申请日：2016-11-29
Applicant: Soraa Laser Diode, Inc.
Inventor： James W. Raring , Mathew Schmidt , Christiane Poblenz
IPC: H01S5/34 , H01S5/343 , H01S5/20 , H01S5/227 , B82Y20/00 , H01S5/00 , H01S5/02 , H01S5/028 , H01S5/32 , H01S5/40
CPC classification number: H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0202 , H01S5/028 , H01S5/2009 , H01S5/227 , H01S5/3202 , H01S5/3213 , H01S5/3407 , H01S5/4025
Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
-
公开(公告)号：US20170331255A1
公开(公告)日：2017-11-16
申请号：US15363756
申请日：2016-11-29
Applicant: Soraa Laser Diode, Inc.
Inventor： James W. Raring , Mathew Schmidt , Christiane Poblenz
CPC classification number: H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0202 , H01S5/028 , H01S5/2009 , H01S5/227 , H01S5/3202 , H01S5/3213 , H01S5/3407 , H01S5/4025
Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
-
10.发明授权Laser devices having a gallium and nitrogen containing semipolar surface orientation 有权具有镓和氮的半极性表面取向的激光器件公开(公告)号：US09166373B1
公开(公告)日：2015-10-20
申请号：US14603948
申请日：2015-01-23
Applicant: Soraa Laser Diode, Inc.
Inventor： James W. Raring , Mathew Schmidt , Bryan Ellis , Hua Huang , Melvin McLaurin , Christiane Poblenz Elsass
CPC classification number: H01S5/3202 , H01S5/0287 , H01S5/1039 , H01S5/2018 , H01S5/22 , H01S5/3013 , H01S5/3063 , H01S5/32341 , H01S5/34333 , H01S5/4031 , H01S2304/04
Abstract: Laser devices formed on a semipolar surface region of a gallium and nitrogen containing material are disclosed. The laser devices have a laser stripe configured to emit a laser beam having a cross-polarized emission state.
Abstract translation: 公开了在含镓和氮的材料的半极性表面区域上形成的激光器件。 激光器件具有被配置为发射具有交叉极化发射状态的激光束的激光条纹。
-
-
-
-
-
-
-
-
-
Search Results
10
records
(took 0.019 seconds)
