Distributed mechanism for fine-grained test power control

    公开(公告)号:US12217102B2

    公开(公告)日:2025-02-04

    申请号:US17551011

    申请日:2021-12-14

    Abstract: An integrated circuit comprises a set of processor cores, wherein each processor core of the set of processor cores includes BIST logic circuitry and multiple memory blocks coupled to the BIST logic circuitry. Each processor core further includes multiple power control circuitry, where each power control circuitry of the multiple power control circuitry is coupled to a respective processor core of the set of processor cores, multiple isolation circuitry, where each isolation circuitry of the multiple isolation circuitry is coupled to a respective processor core of the set of processor cores, a built-in-self repair (BISR) controller coupled to the each of the set of processor cores, each of the multiple power control circuitry, and each of the multiple isolation circuitry, and a safety controller coupled to the BISR controller, the multiple power control circuitry, and to the multiple isolation circuitry.

    METHODS AND APPARATUS TO CHARACTERIZE MEMORY

    公开(公告)号:US20230229338A1

    公开(公告)日:2023-07-20

    申请号:US17900551

    申请日:2022-08-31

    CPC classification number: G06F3/0653 G06F3/0604 G06F3/0679

    Abstract: An example device includes: converter circuitry having an output configured to couple to a first memory circuit from a plurality of memory circuits, the converter circuitry configured to: receive a first instruction formatted with a uniform protocol; and convert the first instruction from the uniform protocol to a protocol specific to the first memory circuit; logic circuitry having an input configured to couple to the first memory circuit, the logic circuitry configured to: receive a first result of the first instruction from the first memory circuit; and responsive to a second instruction, combine the first result with other results from ones of the plurality of memory circuits into an output.

    Parallel memory self-testing
    3.
    发明授权

    公开(公告)号:US10600495B2

    公开(公告)日:2020-03-24

    申请号:US15891789

    申请日:2018-02-08

    Abstract: In described examples of circuitry and methods for testing multiple memories, a controller generates a sequence of commands to be applied to one or more of the memories, where each given command includes expected data, and a command address. Local adapters are individually coupled with the controller and with an associated memory. Each local adapter translates the command to a memory type of the associated memory, maps the command address to a local address of the associated memory, and provides test results to the controller according to read data from the local address of the associated memory and the expected data of the command.

    MEMORY BIST CIRCUIT AND METHOD
    6.
    发明公开

    公开(公告)号:US20240170083A1

    公开(公告)日:2024-05-23

    申请号:US18057801

    申请日:2022-11-22

    CPC classification number: G11C29/1201 G11C29/18 G11C29/46

    Abstract: An electronic circuit includes: a memory including a data input, an address input, a command input, and a data output; a register having a data input coupled to the data output of the memory; a comparator circuit having a first data input coupled to the data output of the memory, and a second data input coupled to a data output of the register; an inverter circuit having a data input coupled to the data output of the register, and a data output coupled to the data input of the memory; and a controller having a command output coupled to the command input of the memory, an address output coupled to the address input of the memory, and a fault input coupled to a data output of the comparator circuit, where the controller is configured to determine whether the memory has a fault based on the fault input of the controller.

    Hierarchical, Distributed Built-in Self-Repair Solution
    8.
    发明申请
    Hierarchical, Distributed Built-in Self-Repair Solution 有权
    分层式,分布式内置自修复解决方案

    公开(公告)号:US20140189450A1

    公开(公告)日:2014-07-03

    申请号:US14108489

    申请日:2013-12-17

    Abstract: A built-in self-test (BIST) circuit to test one or more memory blocks on an integrated circuit. The one or more memory blocks further includes a first memory block and a second memory block A built-in soft-repair controller (BISoR) is provided to soft repair the one or more memory blocks. The BIST circuit in conjunction with the BISoR is configured to test and soft repair the first memory block before performing test and soft repair of the second memory block.

    Abstract translation: 内置自检(BIST)电路,用于测试集成电路上的一个或多个存储器块。 一个或多个存储器块还包括第一存储器块和第二存储器块A,提供内置的软修复控制器(BISoR)来软件修复所述一个或多个存储器块。 配置BISoR的BIST电路配置为在执行第二个内存块的测试和软修复之前测试和软修复第一个内存块。

    NON-VOLATILE MEMORY COMPRESSION FOR MEMORY REPAIR

    公开(公告)号:US20230409435A1

    公开(公告)日:2023-12-21

    申请号:US18239880

    申请日:2023-08-30

    CPC classification number: G06F11/1448 H03M7/30 G06F2201/82

    Abstract: One example includes an integrated circuit (IC). The IC includes non-volatile memory and logic. The logic is configured to receive repair code associated with a memory instance and assign a compression parameter to the repair code based on a configuration of the memory instance. The logic is also configured to compress the repair code based on the compression parameter to produce compressed repair code and to provide compressed repair data that includes the compressed repair code and compression control data that identifies the compression parameter. A non-volatile memory controller is coupled between the non-volatile memory and the logic. The non-volatile memory controller is configured to transfer the compressed repair data to and/or from the non-volatile memory.

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