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Patent Agency Ranking
公开(公告)号：US20210193871A1
公开(公告)日：2021-06-24
申请号：US16757920
申请日：2018-10-31
Applicant: The Regents of the University of California
Inventor： Matthew S. Wong , David Hwang , Abdullah Alhassan , Steven P. DenBaars
Abstract: A reduction in leakage current and an increase in efficiency of III-nitride LEDs is obtained by sidewall passivation using atomic layer deposition of a dielectric. Atomic layer deposition is a hydrogen-free deposition method, which avoids problems associated with the effects of hydrogen on passivation and transparency.
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公开(公告)号：US20190207043A1
公开(公告)日：2019-07-04
申请号：US16325246
申请日：2017-08-17
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Benjamin P. Yonkee , Asad J. Mughal , David Hwang , Erin C. Young , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC: H01L31/0304 , H01L33/00 , H01L21/02 , H01L33/32
CPC classification number: H01L31/03044 , H01L21/0254 , H01L21/02579 , H01L33/007 , H01L33/32 , Y02E10/544
Abstract: A physical vapor deposition (e.g., sputter deposition) method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and electron cyclotron resonance (ECR) sputtering to grow one or more tunnel junctions. In another method, the surface of the p-type layer is treated before deposition of the tunnel junction on the p-type layer. In yet another method, the whole device (including tunnel junction) is grown using MOCVD and the p-type layers of the III-nitride material are reactivated by lateral diffusion of hydrogen through mesa sidewalls in the III-nitride material, with one or more lateral dimensions of the mesa that are less than or equal to about 200 μm. A flip chip display device is also disclosed.
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公开(公告)号：US10985285B2
公开(公告)日：2021-04-20
申请号：US16325246
申请日：2017-08-17
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Benjamin P. Yonkee , Asad J. Mughal , David Hwang , Erin C. Young , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC: H01L31/0304 , H01L29/207 , H01L33/32 , H01L33/00 , H01L21/02 , H01L29/36
Abstract: A physical vapor deposition (e.g., sputter deposition) method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and electron cyclotron resonance (ECR) sputtering to grow one or more tunnel junctions. In another method, the surface of the p-type layer is treated before deposition of the tunnel junction on the p-type layer. In yet another method, the whole device (including tunnel junction) is grown using MOCVD and the p-type layers of the III-nitride material are reactivated by lateral diffusion of hydrogen through mesa sidewalls in the III-nitride material, with one or more lateral dimensions of the mesa that are less than or equal to about 200 μm. A flip chip display device is also disclosed.
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公开(公告)号：US20170236807A1
公开(公告)日：2017-08-17
申请号：US15582215
申请日：2017-04-28
Applicant: The Regents of the University of California
Inventor： David Hwang , Nathan G. Young , Ben Yonkee , Burhan K. Saifaddin , Steven P. DenBaars , James S. Speck , Shuji Nakamura
CPC classification number: H01L33/0075 , H01L25/0753 , H01L33/0079 , H01L33/32 , H01L33/486
Abstract: III-V micro light-emitting diodes (LEDs) are fabricated using a photoelectrochemical (PEC) etch. A sacrificial layer and III-V device layers are epitaxially grown on a host substrate, wherein the III-V device layers are patterned to form the micro-LEDs. The sacrificial layer is removed by a photoelectrochemical (PEC) etch, so as to fully or partially separate the micro-LEDs from the substrate, before or after the micro-LEDs are bonded to a submount or intermediate substrate. The micro-LEDs may be bonded to a submount with a polymer film deposited thereon, wherein the polymer film with the micro-LEDs is subsequently delaminated from the submount. Alternatively, the intermediate substrate may be a transfer medium, wherein the micro-LEDs are separated from the host substrate by mechanical fracturing, and then bonded to a second substrate, after which the intermediate substrate is removed, wherein a third substrate may be bonded to exposed surfaces of the transferred micro-LEDs.
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5.发明公开公开(公告)号：US20240145625A1
公开(公告)日：2024-05-02
申请号：US18546484
申请日：2022-02-28
Applicant: The Regents of the University of California
Inventor： David Hwang , Matthew S. Wong , Shuji Nakamura
CPC classification number: H01L33/06 , H01L33/007 , H01L33/24 , H01L33/325
Abstract: A device including an activated p-type layer comprising a III-Nitride based Mg-doped layer grown by vapor phase deposition or a growth method different from MBE. The p-type layer is activated through a sidewall of the p-type layer after the removal of defects from the sidewall thereby increasing a hole concentration in the p-type layer. In one or more examples, the device includes an active region between a first n-type layer and the p-type layer; a second n-type layer on the p-type layer; and a tunnel junction between the second n-type layer and the p-type layer, and the activated p-type layer has a hole concentration characterized by a current density of at least 100 Amps per centimeter square flowing between the first n-type layer and the second n-type layer in response to a voltage of 4 volts or less applied across the first n-type layer and the second n-type layer.
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