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公开(公告)号：US20170216810A1
公开(公告)日：2017-08-03
申请号：US15329619
申请日：2015-07-31
Inventor： Zetian MI , Md Golam KIBRIA , Mohammad Faqrul Alam CHOWDHURY
CPC classification number: B01J19/127 , B01J19/123 , B01J19/128 , B01J2219/0877 , B01J2219/0892 , B01J2219/1203 , B82Y30/00 , B82Y40/00 , C01B3/042 , C01B13/0207 , C25B1/003 , H01L21/02381 , H01L21/02433 , H01L21/02499 , H01L21/0254 , H01L21/02579 , H01L21/02603 , H01L21/02631 , H01L21/02639 , H01L29/0669 , H01L29/0676 , H01L29/2003 , H01L29/207 , Y02E60/364 , Y02E60/366 , Y02P20/134
Abstract: InGaN offers a route to high efficiency overall water splitting under one-step photo-excitation. Further, the chemical stability of metal-nitrides supports their use as an alternative photocatalyst. However, the efficiency of overall water splitting using InGaN and other visible light responsive photocatalysts has remained extremely low despite prior art work addressing optical absorption through band gap engineering. Within this prior art the detrimental effects of unbalanced charge carrier extraction/collection on the efficiency of the four electron-hole water splitting reaction have remained largely unaddressed. To address this growth processes are presented that allow for controlled adjustment and establishment of the appropriate Fermi level and/or band bending in order to allow the photochemical water splitting to proceed at high rate and high efficiency. Beneficially, establishing such material surface charge properties also reduces photo-corrosion and instability under harsh photocatalysis conditions.
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公开(公告)号：US20160027961A1
公开(公告)日：2016-01-28
申请号：US14776120
申请日：2014-03-14
Inventor： Zetian MI , Hieu Pham TRUNG , Songrui ZHAO
IPC: H01L33/06
Abstract: Solid state sources offers potential advantages including high brightness, electricity savings, long lifetime, and higher color rendering capability, when compared to incandescent and fluorescent light sources. To date however, many of these advantages, however, have not been borne out in providing white LED lamps for general lighting applications. The inventors have established that surface recombination through non-radiative processes results in highly inefficient electrical injection. Exploiting in-situ grown shells in combination with dot-in-a-wire LED structures to overcome this limitation through the effective lateral confinement offered by the shell the inventors have demonstrated core-shell dot-in-a-wire LEDs, with significantly improved electrical injection efficiency and output power, providing phosphor-free InGaN/GaN nanowire white LEDs operating with milliwatt output power and color rendering indices of 95-98. Additionally, the inventors demonstrate efficient UV nanowire LEDs for medical applications as well as the non-degraded growth of nanowire LEDs on amorphous substrates.
Abstract translation: 与白炽灯和荧光灯相比，固态光源提供了高亮度，节电，长寿命和更高显色能力的潜在优势。 然而，迄今为止，许多这些优点在为一般照明应用提供白色LED灯中尚未得到证实。 发明人已经确定，通过非辐射过程的表面复合导致高度低效的电注入。 利用现场生长的壳与点阵式LED结构相结合，以通过壳提供的有效的侧向限制来克服这个限制，本发明人已经证明了核 - 壳点对点LED的LED，其显着改进 电喷射效率和输出功率，提供无磷的InGaN / GaN纳米线白光LED，以毫瓦输出功率和显色指数为95-98。 此外，本发明人证明了用于医疗应用的有效的UV纳米线LED以及纳米线LED在非晶衬底上的非降解生长。
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公开(公告)号：US20200002825A1
公开(公告)日：2020-01-02
申请号：US16453010
申请日：2019-06-26
Inventor： Srinivas VANKA , Zetian MI
Abstract: There is described a silicon photoanode generally having a silicon-based substrate; and a protective layer covering the silicon-base substrate, the protective layer having a transition metal dichalcogenide (TMDC) material, being uniform and having a thickness below about 8 nm.
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公开(公告)号：US20180290887A1
公开(公告)日：2018-10-11
申请号：US15575039
申请日：2016-05-19
Inventor： Chao-Jun LI , Zetian MI , Lu LI
IPC: C01B3/00 , B01J21/06 , B01J23/52 , B01J23/42 , B01J23/46 , B01J23/44 , B01J35/00 , B01J37/02 , B01J19/12
Abstract: The present disclosure relates to a reversible hydrogen transfer process and storage system using visible light to photocatalytically generate hydrogen from compounds comprising saturated or partially saturated carbocyclic residue and catalytically hydrogenate compounds comprising at least one carbocyclic aromatic residue.
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Patent Agency Ranking
公开(公告)号：US20210257511A1
公开(公告)日：2021-08-19
申请号：US17111184
申请日：2020-12-03
Inventor： Zetian MI , Songrui ZHAO , Renjie WANG
Abstract: GaN-based nanowire heterostructures have been intensively studied for applications in light emitting diodes (LEDs), lasers, solar cells and solar fuel devices. Surface charge properties play a dominant role on the device performance and have been addressed within the prior art by use of a relatively thick large bandgap AlGaN shell covering the surfaces of axial InGaN nanowire LED heterostructures has been explored and shown substantial promise in reducing surface recombination leading to improved carrier injection efficiency and output power. However, these lead to increased complexity in device design, growth and fabrication processes thereby reducing yield/performance and increasing costs for devices. Accordingly, there are taught self-organising InGaN/AlGaN core-shell quaternary nanowire heterostructures wherein the In-rich core and Al-rich shell spontaneously form during the growth process.
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公开(公告)号：US20200156041A1
公开(公告)日：2020-05-21
申请号：US16749405
申请日：2020-01-22
Inventor： Zetian MI , Md Golam KIBRIA , Mohammad Faqrul Alam CHOWDHURY
Abstract: InGaN offers a route to high efficiency overall water splitting under one-step photo-excitation. Further, the chemical stability of metal-nitrides supports their use as an alternative photocatalyst. However, the efficiency of overall water splitting using InGaN and other visible light responsive photocatalysts has remained extremely low despite prior art work addressing optical absorption through band gap engineering. Within this prior art the detrimental effects of unbalanced charge carrier extraction/collection on the efficiency of the four electron-hole water splitting reaction have remained largely unaddressed. To address this growth processes are presented that allow for controlled adjustment and establishment of the appropriate Fermi level and/or band bending in order to allow the photochemical water splitting to proceed at high rate and high efficiency. Beneficially, establishing such material surface charge properties also reduces photo-corrosion and instability under harsh photocatalysis conditions.
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公开(公告)号：US20230369536A1
公开(公告)日：2023-11-16
申请号：US18101570
申请日：2023-01-25
Inventor： Zetian MI , Songrui ZHAO , Renjie WANG
CPC classification number: H01L33/06 , H01L33/08 , H01L33/32 , H01L33/007 , H01S5/1042 , H01S5/32341 , H01L33/18 , H01S5/021
Abstract: GaN-based nanowire heterostructures have been intensively studied for applications in light emitting diodes (LEDs), lasers, solar cells and solar fuel devices. Surface charge properties play a dominant role on the device performance and have been addressed within the prior art by use of a relatively thick large bandgap AlGaN shell covering the surfaces of axial InGaN nanowire LED heterostructures has been explored and shown substantial promise in reducing surface recombination leading to improved carrier injection efficiency and output power. However, these lead to increased complexity in device design, growth and fabrication processes thereby reducing yield/performance and increasing costs for devices. Accordingly, there are taught self-organising InGaN/AlGaN core-shell quaternary nanowire heterostructures wherein the In-rich core and Al-rich shell spontaneously form during the growth process.
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公开(公告)号：US20200098947A1
公开(公告)日：2020-03-26
申请号：US16696012
申请日：2019-11-26
Inventor： Zetian MI , Songrui ZHAO , Renjie WANG
Abstract: GaN-based nanowire heterostructures have been intensively studied for applications in light emitting diodes (LEDs), lasers, solar cells and solar fuel devices. Surface charge properties play a dominant role on the device performance and have been addressed within the prior art by use of a relatively thick large bandgap AlGaN shell covering the surfaces of axial InGaN nanowire LED heterostructures has been explored and shown substantial promise in reducing surface recombination leading to improved carrier injection efficiency and output power. However, these lead to increased complexity in device design, growth and fabrication processes thereby reducing yield/performance and increasing costs for devices. Accordingly, there are taught self-organising InGaN/AlGaN core-shell quaternary nanowire heterostructures wherein the In-rich core and Al-rich shell spontaneously form during the growth process.
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公开(公告)号：US20190237619A1
公开(公告)日：2019-08-01
申请号：US16372946
申请日：2019-04-02
Inventor： Zetian MI , Songrui ZHAO , Renjie WANG
CPC classification number: H01L33/06 , H01L33/007 , H01L33/08 , H01L33/18 , H01L33/32 , H01S5/021 , H01S5/1042 , H01S5/32341 , H01S5/4006
Abstract: GaN-based nanowire heterostructures have been intensively studied for applications in light emitting diodes (LEDs), lasers, solar cells and solar fuel devices. Surface charge properties play a dominant role on the device performance and have been addressed within the prior art by use of a relatively thick large bandgap AlGaN shell covering the surfaces of axial InGaN nanowire LED heterostructures has been explored and shown substantial promise in reducing surface recombination leading to improved carrier injection efficiency and output power. However, these lead to increased complexity in device design, growth and fabrication processes thereby reducing yield/performance and increasing costs for devices. Accordingly, there are taught self-organising InGaN/AlGaN core-shell quaternary nanowire heterostructures wherein the In-rich core and Al-rich shell spontaneously form during the growth process.
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