Thin-film magnetic head having special input/output terminal backing
connection and method of fabricating the same
    1.
    发明授权
    Thin-film magnetic head having special input/output terminal backing connection and method of fabricating the same 失效
    具有特殊输入/输出端子背衬连接的薄膜磁头及其制造方法

    公开(公告)号:US4949209A

    公开(公告)日:1990-08-14

    申请号:US231505

    申请日:1988-08-12

    IPC分类号: G11B5/31

    CPC分类号: G11B5/3106 G11B5/313

    摘要: In a thin-film magnetic head having a magnetic core (upper magnetic layer), in the electromagnetic conversion section, which are composed of an upper first magnetic film, inorganic insulating film, and an upper second magnetic film, the upper first magnetic film is used as a second wiring for electrical continuity between the coil and input/output terminal. The upper first magnetic film is connected to the center of a coil which is of a single-layer structure. The first upper magnetic film is made of a same material as the coil and is formed simultaneously with the latter. In the region in which an input/output terminal backing is formed, the upper first magnetic film of a second wiring is removed. Thus, the electrical continuity is established between the input/output terminal and the center of the coil.Also, the utilization of the upper first magnetic film as second wiring is applicable to a thin-film magnetic head having a coil of a multi-layer structure.

    Method for making a thin film magnetic head
    6.
    发明授权
    Method for making a thin film magnetic head 失效
    制造薄膜磁头的方法

    公开(公告)号:US4861398A

    公开(公告)日:1989-08-29

    申请号:US123278

    申请日:1987-11-20

    IPC分类号: G11B5/31 G11B5/455

    摘要: DC bias currents are applied to a conducting wire of a thin film magnetic head to be inspected. When the DC bias currents (I.sub.0, I.sub.1, I.sub.2) are supplied to the conducting wire, the impedances (Z.sub.0, Z.sub.1, Z.sub.2) corresponding to the DC bias currents are measured. When a ratio (.vertline.Z.sub.1 -Z.sub.0 .vertline./.vertline.Z.sub.2 -Z.sub.0 .vertline.) corresponding to an overwrite characteristic (OW) reaches to a predetermined value by lapping tip portions of an upper magnetic layer and a lower magnetic layer of the magnetic head, the lapping process of the magnetic head is finished.

    摘要翻译: 将直流偏置电流施加到待检查的薄膜磁头的导线上。 当直流偏置电流(I0,I1,I2)被提供给导线时,测量对应于直流偏置电流的阻抗(Z0,Z1,Z2)。 当通过研磨磁头的上部磁性层和下部磁性层的尖端部分而将与覆盖特性(OW)相对应的比率(| Z1-Z0 | / | Z2-Z0))达到预定值时,研磨 磁头的处理完成。

    Method of making silicon diaphragm pressure sensor
    7.
    发明授权
    Method of making silicon diaphragm pressure sensor 失效
    制造硅膜压力传感器的方法

    公开(公告)号:US4670969A

    公开(公告)日:1987-06-09

    申请号:US694990

    申请日:1985-01-25

    摘要: A method of making a silicon diaphragm pressure sensor includes forming an oxide film on one surface of a monocrystalline silicon substrate. A polycrystalline silicon layer is formed on the oxide film. The oxide film may be partly removed before the formation of the polycrystalline silicon layer. The polycrystalline silicon layer is heated and melt to recrystallize the same, thereby converting the polycrystalline silicon layer into a monocrystalline silicon layer. On the monocrystalline silicon layer may be epitaxially grown an additional monocrystalline silicon layer. By using the oxide film as an etching stopper, a predetermined portion of the substrate is etched over a range from the other surface of the substrate to the oxide film, thereby providing a diaphragm of the pressure sensor.

    摘要翻译: 制造硅膜压力传感器的方法包括在单晶硅衬底的一个表面上形成氧化膜。 在氧化物膜上形成多晶硅层。 在形成多晶硅层之前可以部分地去除氧化膜。 将多晶硅层加热熔化,使其重结晶,从而将多晶硅层转化为单晶硅层。 在单晶硅层上可以外延生长另外的单晶硅层。 通过使用氧化膜作为蚀刻停止层,在从衬底的另一个表面到氧化膜的范围内蚀刻衬底的预定部分,从而提供压力传感器的隔膜。

    Pressure sensor with improved semiconductor diaphragm
    8.
    发明授权
    Pressure sensor with improved semiconductor diaphragm 失效
    带有改进的半导体膜片的压力传感器

    公开(公告)号:US4511878A

    公开(公告)日:1985-04-16

    申请号:US534076

    申请日:1983-09-20

    IPC分类号: G01L9/04 G01L9/00 G01L9/06

    摘要: Provided is a pressure sensor of semiconductor type, having a semiconductor diaphragm, wherein the diaphragm comprises at least one of thin wall parts and at least one of thick wall parts, and defines therein recesses formed in the lower surface of the diaphragm below the thin wall parts, piezoresistance elements are laid on the upper surface of the diaphragm near the thin wall parts, and a supporting member is sealingly jointed to the thick wall parts at the lower surface of the diaphragm, so that the recesses are sealed and confined so as to prevent high pressure fluid from blowing off when the thin wall part is broken.

    摘要翻译: 提供一种具有半导体膜片的半导体型压力传感器,其中隔膜包括薄壁部分和至少一个厚壁部分中的至少一个,并且在其中限定形成在薄壁​​下方的隔膜的下表面中的凹部 零件,压阻元件放置在薄壁部分附近的隔膜的上表面上,并且支撑构件与隔膜的下表面的厚壁部分密封地接合,使得凹部被密封和限制,以便 当薄壁部分破裂时,防止高压液体吹走。

    Semiconductor-type pressure transducer
    9.
    发明授权
    Semiconductor-type pressure transducer 失效
    半导体式压力传感器

    公开(公告)号:US4604899A

    公开(公告)日:1986-08-12

    申请号:US597753

    申请日:1984-04-06

    CPC分类号: G01L1/2281 G01L9/065

    摘要: A semiconductor-type pressure transducer is disclosed in which the pressure change is detected as a resistance change by use of a bridge circuit including at least a gauge resistor changing with an external force. Each gauge resistor is made of a PN junction of a semiconductor. The pressure transducer further comprises an amplification factor compensator for cancelling the effect of the temperature change of the gauge resistors making up the bridge circuit on the amplification factor of the amplification circuit for amplifying the output of the bridge circuit.

    摘要翻译: 公开了一种半导体型压力传感器,其中通过使用至少包括用外力改变的量规电阻器的桥式电路将压力变化检测为电阻变化。 每个规格电阻由半导体的PN结制成。 压力传感器还包括放大系数补偿器,用于抵消构成桥式电路的量规电阻器的温度变化对放大电路的放大系数的影响,用于放大桥式电路的输出。

    Constant current source device having a ratio metricity between supply
voltage and output current
    10.
    发明授权
    Constant current source device having a ratio metricity between supply voltage and output current 失效
    恒流源装置具有电源电压和输出电流之间的比率

    公开(公告)号:US4591780A

    公开(公告)日:1986-05-27

    申请号:US559467

    申请日:1983-12-08

    CPC分类号: G05F3/30 G05F3/265

    摘要: A current source device controls a rate of change of current flowing through a load so that the change rate of the current is equal to a change rate of a fluctuating supply voltage. A first transistor is fed with the supply voltage via a first resistor connected to its collector and a second resistor connected to its emitter. A second transistor has a base connected to a base of the first transistor, an emitter connected to a third resistor and a collector connected to a load. A current to the load is fed from the supply voltage via the load, the collector and emitter of the second transistor and the third resistor. The collector and base of the first transistor are respectively connected to a base and an emitter of a third transistor having a collector fed with the supply voltage. The ratio between a voltage drop caused across the second resistor by a reference current flowing through the first resistor, the collector and emitter of the first transistor and the second resistor, and a voltage drop caused across the third resistor by an emitter current of the second transistor, which is substantially equal to a collector current of the second transistor flowing through the load, is set to a predetermined value. The emitter area of the second transistor is enlarged beyond that of the first transistor to obtain a sufficiently large output current.

    摘要翻译: 电流源装置控制流过负载的电流的变化率,使得电流的变化率等于电源电压波动的变化率。 第一晶体管经由连接到其集电极的第一电阻器和连接到其发射极的第二电阻器馈送电源电压。 第二晶体管具有连接到第一晶体管的基极的基极,连接到第三电阻器的发射极和连接到负载的集电极。 通过负载,第二晶体管的集电极和发射极以及第三电阻从供电电压馈送到负载的电流。 第一晶体管的集电极和基极分别连接到具有馈送有电源电压的集电极的第三晶体管的基极和发射极。 通过流过第一电阻器的参考电流,第一晶体管的集电极和发射极以及第二电阻器在第二电阻器之间引起的电压降之间的比率以及由第二电阻器的发射极电流引起的第三电阻器的电压降 基本上等于流过负载的第二晶体管的集电极电流的晶体管被​​设定为预定值。 第二晶体管的发射极面积比第一晶体管的发射极面积增大,以获得足够大的输出电流。