摘要:
In a thin-film magnetic head having a magnetic core (upper magnetic layer), in the electromagnetic conversion section, which are composed of an upper first magnetic film, inorganic insulating film, and an upper second magnetic film, the upper first magnetic film is used as a second wiring for electrical continuity between the coil and input/output terminal. The upper first magnetic film is connected to the center of a coil which is of a single-layer structure. The first upper magnetic film is made of a same material as the coil and is formed simultaneously with the latter. In the region in which an input/output terminal backing is formed, the upper first magnetic film of a second wiring is removed. Thus, the electrical continuity is established between the input/output terminal and the center of the coil.Also, the utilization of the upper first magnetic film as second wiring is applicable to a thin-film magnetic head having a coil of a multi-layer structure.
摘要:
A magnetic recording apparatus for recording information on a magnetic recording medium. A circuit for generates a recording current pulse train and supplies the pulse train to a magnetic head. The last pulse of the recording current pulse train dampled waveform. A ripple current is superposed on the damped waveform.
摘要:
A compound magnetic head includes first and second magnetic poles arranged to face each other to define a recording gap therebetween, a magnetic film arranged between the first and second magnetic poles, a first non-magnetic film arranged between the first magnetic pole and the magnetic film to define a first reproducing gap therebetween, and a second non-magnetic film arranged between the second magnetic pole and the magnetic pole to define a second reproducing gap therebetween. The recording gap and the first and second reproducing gaps have the same width and a common center line of the gap widths parallel to the direction of movement of a magnetic recording medium.
摘要:
A magnetic disc apparatus has a large recording density of 120 megabits per square inch or more, and defines a relationship among a pole thickness (Pt) of thin-film magnetic heads disposed in the magnetic disc apparatus, and a saturation flux density (Bs) of cores of the heads and a recording wavelength (.lambda.) for the thin film magnetic discs have a coercivity of 1800 Oe or more, wherein a levitation space between the head and the disc is 0.15 .mu.m or less.
摘要:
A flying head slider has a slider body in which gas bearing rails are formed on a surface thereof disposed in opposed relation to a recording medium. A bleed portion is also provided at the surface of the slider body between a pair of gas bearing rails. The bleed portion is composed of at least a rectangular-shaped deep bleed portion in which the pair of longer sides thereof are directioned in parallel to the longitudinal axis direction of the gas bearing rails.
摘要:
DC bias currents are applied to a conducting wire of a thin film magnetic head to be inspected. When the DC bias currents (I.sub.0, I.sub.1, I.sub.2) are supplied to the conducting wire, the impedances (Z.sub.0, Z.sub.1, Z.sub.2) corresponding to the DC bias currents are measured. When a ratio (.vertline.Z.sub.1 -Z.sub.0 .vertline./.vertline.Z.sub.2 -Z.sub.0 .vertline.) corresponding to an overwrite characteristic (OW) reaches to a predetermined value by lapping tip portions of an upper magnetic layer and a lower magnetic layer of the magnetic head, the lapping process of the magnetic head is finished.
摘要:
A method of making a silicon diaphragm pressure sensor includes forming an oxide film on one surface of a monocrystalline silicon substrate. A polycrystalline silicon layer is formed on the oxide film. The oxide film may be partly removed before the formation of the polycrystalline silicon layer. The polycrystalline silicon layer is heated and melt to recrystallize the same, thereby converting the polycrystalline silicon layer into a monocrystalline silicon layer. On the monocrystalline silicon layer may be epitaxially grown an additional monocrystalline silicon layer. By using the oxide film as an etching stopper, a predetermined portion of the substrate is etched over a range from the other surface of the substrate to the oxide film, thereby providing a diaphragm of the pressure sensor.
摘要:
Provided is a pressure sensor of semiconductor type, having a semiconductor diaphragm, wherein the diaphragm comprises at least one of thin wall parts and at least one of thick wall parts, and defines therein recesses formed in the lower surface of the diaphragm below the thin wall parts, piezoresistance elements are laid on the upper surface of the diaphragm near the thin wall parts, and a supporting member is sealingly jointed to the thick wall parts at the lower surface of the diaphragm, so that the recesses are sealed and confined so as to prevent high pressure fluid from blowing off when the thin wall part is broken.
摘要:
A semiconductor-type pressure transducer is disclosed in which the pressure change is detected as a resistance change by use of a bridge circuit including at least a gauge resistor changing with an external force. Each gauge resistor is made of a PN junction of a semiconductor. The pressure transducer further comprises an amplification factor compensator for cancelling the effect of the temperature change of the gauge resistors making up the bridge circuit on the amplification factor of the amplification circuit for amplifying the output of the bridge circuit.
摘要:
A current source device controls a rate of change of current flowing through a load so that the change rate of the current is equal to a change rate of a fluctuating supply voltage. A first transistor is fed with the supply voltage via a first resistor connected to its collector and a second resistor connected to its emitter. A second transistor has a base connected to a base of the first transistor, an emitter connected to a third resistor and a collector connected to a load. A current to the load is fed from the supply voltage via the load, the collector and emitter of the second transistor and the third resistor. The collector and base of the first transistor are respectively connected to a base and an emitter of a third transistor having a collector fed with the supply voltage. The ratio between a voltage drop caused across the second resistor by a reference current flowing through the first resistor, the collector and emitter of the first transistor and the second resistor, and a voltage drop caused across the third resistor by an emitter current of the second transistor, which is substantially equal to a collector current of the second transistor flowing through the load, is set to a predetermined value. The emitter area of the second transistor is enlarged beyond that of the first transistor to obtain a sufficiently large output current.