公开(公告)号：US07388318B2

公开(公告)日：2008-06-17

申请号：US10518704

申请日：2003-06-20

申请人： Tetsuo Yamada ,  Kosuke Nishimura ,  Keigo Nagao

发明人： Tetsuo Yamada ,  Kosuke Nishimura ,  Keigo Nagao

IPC分类号： H01L41/08

CPC分类号： H03H9/562 ,  H03H3/02 ,  H03H9/02094 ,  H03H9/02102 ,  H03H9/02157 ,  H03H9/564 ,  H03H9/568 ,  H03H9/585 ,  H03H9/588

摘要： A thin film piezoelectric device includes a substrate (12) having via holes (22) and a piezoelectric laminated structure (14) consisting of a lower electrode (15), a piezoelectric film (16), and an upper electrode (17) formed on the substrate (12) via an insulation layer (13). A plurality of thin film piezoelectric resonators (210, 220) are formed for the via holes (22). The piezoelectric laminated structure (14) includes diaphragms (23) located to face the via holes (22) and a support area other than those. The thin film piezoelectric resonators (210, 220) are electrically connected by the lower electrode (15). When the straight line in the substrate plane passing through the centers (1, 2) of the diaphragms (23) of the thin film piezoelectric resonators (210, 220) has the length D1 of the segment passing through the support area and the distance between the centers of the diaphragms of the thin film piezoelectric resonators (210, 220) is D0,the ratio D1/D0 is 0.1 to 0.5. The via hole (22) is fabricated by the deep graving type reactive ion etching method.

摘要翻译： 一种薄膜压电装置，包括具有通孔（22）的基板（12）和由下电极（15），压电膜（16）和上电极（17）构成的压电层叠结构（14） 所述基板（12）经由绝缘层（13）。 为通孔（22）形成多个薄膜压电谐振器（210,220）。 压电层叠结构（14）包括面对通孔（22）的位置和除了这些之外的支撑区域的隔膜（23）。 薄膜压电谐振器（210,220）通过下电极（15）电连接。 当穿过薄膜压电谐振器（210,220）的隔膜（23）的中心（1,2）的基板平面中的直线具有穿过支撑区域的段的长度D 1和距离 在薄膜压电谐振器（210,220）的膜片的中心之间的距离为D 0，比率D 1 / D 0为0.1至0.5。 通孔（22）通过深刻型反应离子蚀刻法制造。

公开(公告)号：US20060202769A1

公开(公告)日：2006-09-14

申请号：US10551680

申请日：2004-03-30

申请人： Keigo Nagao ,  Kosuke Nishimura ,  Tetsuo Yamada ,  Osamu Otani ,  Sakae Matsuzaki

发明人： Keigo Nagao ,  Kosuke Nishimura ,  Tetsuo Yamada ,  Osamu Otani ,  Sakae Matsuzaki

IPC分类号： H03B5/34

CPC分类号： H03H9/174 ,  H03H3/02 ,  H03H9/0523 ,  H03H9/1014 ,  H03H9/564 ,  H03H9/568

摘要： A piezoelectric thin film device (10) comprising a substrate (12) having a vibration space (20), and a piezoelectric lamination structure (14) formed on the upper surface of the substrate, the piezoelectric lamination structure comprising a piezoelectric film (16) and a lower electrode (15) and upper electrode (17) which are formed on opposite surfaces thereof, respectively, the vibration space (20) being so formed as to allow the vibration of a vibrating section (23) constituted by including at least part of the piezoelectric lamination structure (14) and part of an insulating layer (13). The vibrating space (20) is composed of a first via hole (21) formed from the lower surface of the substrate (12) toward the upper surface thereof so as to form an intermediate surface (25) in the substrate, and a second via hole (22) formed from the intermediate surface (23) toward the upper surface of the substrate so as to be positioned inside the first via hole (21) as seen vertically.

摘要翻译： 一种压电薄膜器件（10），包括具有振动空间（20）的衬底（12）和形成在所述衬底的上表面上的压电层压结构（14），所述压电层压结构包括压电薄膜（16） 以及分别形成在其相对表面上的下电极（15）和上电极（17），所述振动空间（20）形成为允许振动部分（23）的振动，所述振动部分（23）包括至少部分 的压电层压结构（14）和绝缘层（13）的一部分。 所述振动空间（20）由从所述基板（12）的下表面向其上表面形成的第一通孔（21）构成，以在所述基板上形成中间面（25），所述第二通孔 从中间表面（23）形成的孔（22）朝向基板的上表面，以便位于第一通孔（21）的内部。

公开(公告)号：US20050248238A1

公开(公告)日：2005-11-10

申请号：US10518704

申请日：2003-06-20

申请人： Tetsuo Yamada ,  Kosuke Nishimura ,  Keigo Nagao

发明人： Tetsuo Yamada ,  Kosuke Nishimura ,  Keigo Nagao

IPC分类号： H01L41/22 ,  H01L41/29 ,  H03H3/02 ,  H03H9/02 ,  H03H9/56 ,  H03H9/58 ,  H01L41/047

CPC分类号： H03H9/562 ,  H03H3/02 ,  H03H9/02094 ,  H03H9/02102 ,  H03H9/02157 ,  H03H9/564 ,  H03H9/568 ,  H03H9/585 ,  H03H9/588

摘要： A thin film piezoelectric device includes a substrate (12) having via holes (22) and a piezoelectric laminated structure (14) consisting of a lower electrode (15), a piezoelectric film (16), and an upper electrode (17) formed on the substrate (12) via an insulation layer (13). A plurality of thin film piezoelectric resonators (210, 220) are formed for the via holes (22). The piezoelectric laminated structure (14) includes diaphragms (23) located to face the via holes (22) and a support area other than those. The thin film piezoelectric resonators (210, 220) are electrically connected by the lower electrode (15). When the straight line in the substrate plane passing through the centers (1, 2) of the diaphragms (23) of the thin film piezoelectric resonators (210, 220) has the length D1 of the segment passing through the support area and the distance between the centers of the diaphragms of the thin film piezoelectric resonators (210, 220) is D0,the ratio D1/D0 is 0.1 to 0.5. The via hole (22) is fabricated by the deep graving type reactive ion etching method.

摘要翻译： 一种薄膜压电装置，包括具有通孔（22）的基板（12）和由下电极（15），压电膜（16）和上电极（17）构成的压电层叠结构（14） 所述基板（12）经由绝缘层（13）。 为通孔（22）形成多个薄膜压电谐振器（210,220）。 压电层叠结构（14）包括面对通孔（22）的位置和除了这些之外的支撑区域的隔膜（23）。 薄膜压电谐振器（210,220）通过下电极（15）电连接。 当穿过薄膜压电谐振器（210,220）的隔膜（23）的中心（1,2）的基板平面中的直线具有穿过支撑区域的段的长度D 1和距离 在薄膜压电谐振器（210,220）的膜片的中心之间的距离为D 0，比率D 1 / D 0为0.1至0.5。 通孔（22）通过深刻型反应离子蚀刻法制造。

公开(公告)号：US20050093397A1

公开(公告)日：2005-05-05

申请号：US10995447

申请日：2004-11-23

申请人： Tetsuo Yamada ,  Keigo Nagao ,  Chisen Hashimoto

发明人： Tetsuo Yamada ,  Keigo Nagao ,  Chisen Hashimoto

IPC分类号： H04R19/02 ,  B06B1/06 ,  G10K11/04 ,  H01L41/09 ,  H01L41/22 ,  H01L41/313 ,  H03H3/02 ,  H03H9/02 ,  H03H9/05 ,  H03H9/13 ,  H03H9/17 ,  H03H9/56 ,  H03H9/58 ,  H04R31/00 ,  H01L41/08

CPC分类号： H03H9/173 ,  B06B1/0644 ,  G10K11/04 ,  H03H3/02 ,  H03H9/02094 ,  H03H9/02102 ,  H03H9/02149 ,  H03H9/174 ,  H03H9/562 ,  H03H9/564 ,  H03H9/585 ,  H03H9/587 ,  H03H2003/021 ,  H03H2003/0428 ,  Y10S977/888 ,  Y10T29/42 ,  Y10T29/49155

摘要： A pit (52) is formed in a substrate comprising a silicon wafer (51) on a surface of which a silicon oxide thin layer (53) is formed. A sandwich structure (60) comprising a piezoelectric layer (62) and lower and upper electrodes (61, 63) joined to both surfaces of the piezoelectric layer is disposed so as to stride over the pit (52). The upper surface of the lower electrode (61) and the lower surface of the piezoelectric layer (62) joined to the upper surface of the lower electrode are treated so that the RMS variation of the height thereof is equal to 25 nm or less. The thickness of the lower electrode (61) is set to 150 nm or less. According to such a structure, there is provided a high-performance thin film bulk acoustic resonator which are excellent in electromechanical coupling coefficient and acoustic quality factor.

摘要翻译： 在其表面上形成有硅晶片（51）的基板中形成有凹坑（52），其形成有氧化硅薄层（53）。 包括压电层（62）的三明治结构（60）和与压电层的两个表面接合的下电极和上电极（61,63），以跨越凹坑（52）。 处理下电极（61）的上表面和接合到下电极的上表面的压电层（62）的下表面，使得其高度的RMS变化等于25nm或更小。 下电极（61）的厚度设定为150nm以下。 根据这样的结构，提供了机电耦合系数和声音质量因子优异的高性能薄膜体声波谐振器。

公开(公告)号：US07482737B2

公开(公告)日：2009-01-27

申请号：US11546765

申请日：2006-10-12

申请人： Tetsuo Yamada ,  Keigo Nagao ,  Eiji Masui

发明人： Tetsuo Yamada ,  Keigo Nagao ,  Eiji Masui

IPC分类号： H03H9/125

CPC分类号： H03H9/585 ,  H01L41/0477 ,  H03H3/02 ,  H03H9/02031 ,  H03H9/13 ,  H03H9/173 ,  H03H9/174 ,  H03H2003/021 ,  H03H2003/023

摘要： A piezoelectric thin film resonator has a substrate and a piezoelectric layered structure including a lower electrode, piezoelectric aluminum nitride thin film with c-axis orientation and upper electrode formed on the substrate in this order. The lower electrode are made of a metal thin film including a layer containing ruthenium as a major component having a full-width half maximum (FWHM) of a rocking curve of a (0002) diffraction peak of ruthenium of 3.0° or less. The piezoelectric aluminum nitride thin film formed on the lower electrode has a full-width half maximum (FWHM) of a rocking curve of a (0002) diffraction peak of 2.0° or less.

摘要翻译： 压电薄膜谐振器具有基板和压电层叠结构，其包括下电极，具有c轴取向的压电氮化铝薄膜和在基板上依次形成的上电极。 下电极由包含钌作为主要成分的层的金属薄膜制成，其中钌的（0002）钌衍射峰的摇摆曲线的全宽度半峰值（FWHM）为3.0°以下。 形成在下电极上的压电氮化铝薄膜具有2.0°以下的（0002）衍射峰的摇摆曲线的全宽半最大值（FWHM）。

公开(公告)号：US07212082B2

公开(公告)日：2007-05-01

申请号：US10538137

申请日：2004-12-17

申请人： Keigo Nagao ,  Tetsuro Kunisawa ,  Tetsuo Yamada

发明人： Keigo Nagao ,  Tetsuro Kunisawa ,  Tetsuo Yamada

IPC分类号： H03H9/15 ,  H03H3/02 ,  H03H9/54

CPC分类号： H03H3/04 ,  H01L41/316 ,  H03H9/173 ,  H03H9/174

摘要： Method of producing a piezoelectric thin film device comprises a step of forming an insulating layer (12) capable of being etched by a specific chemical substance on the upper surface of a substrate (11); a step of forming a sacrificial layer (13) made of a substance having a higher etching rate by the specific chemical substance than the insulating layer on a partial region of the insulating layer; a step of forming a lower electrode (15) on a region including the sacrificial layer; a step of forming the piezoelectric thin film (16) on a region including a part of the lower electrode; a step of forming an upper electrode (17) on a region including a part of the piezoelectric thin film; a step of forming via hole (18), which penetrates the piezoelectric thin film and lower electrode, so as to expose a part of the sacrificial layer; and a step of forming a space (20) for oscillation by etching both the sacrificial layer and the insulating layer with the same specific chemical substance by introducing the specific chemical substance through the via hole.

摘要翻译： 制造压电薄膜器件的方法包括在衬底（11）的上表面上形成能够被特定化学物质蚀刻的绝缘层（12）的步骤; 在所述绝缘层的部分区域上形成由具有比所述绝缘层更高的蚀刻速率的物质制成的牺牲层（13）的步骤; 在包括所述牺牲层的区域上形成下电极（15）的步骤; 在包括下电极的一部分的区域上形成压电薄膜（16）的步骤; 在包括压电薄膜的一部分的区域上形成上电极（17）的步骤; 形成穿过压电薄膜和下电极的通孔（18）的步骤，以暴露牺牲层的一部分; 以及通过使特定的化学物质通过通孔，通过用相同的特定化学物质蚀刻牺牲层和绝缘层来形成用于振荡的空间（20）的步骤。

公开(公告)号：US20070080611A1

公开(公告)日：2007-04-12

申请号：US11546765

申请日：2006-10-12

申请人： Tetsuo Yamada ,  Keigo Nagao ,  Eiji Masui

发明人： Tetsuo Yamada ,  Keigo Nagao ,  Eiji Masui

IPC分类号： H01L41/047

CPC分类号： H03H9/585 ,  H01L41/0477 ,  H03H3/02 ,  H03H9/02031 ,  H03H9/13 ,  H03H9/173 ,  H03H9/174 ,  H03H2003/021 ,  H03H2003/023

摘要： A piezoelectric thin film resonator has a substrate and a piezoelectric layered structure including a lower electrode, piezoelectric aluminum nitride thin film with c-axis orientation and upper electrode formed on the substrate in this order. The lower electrode are made of a metal thin film including a layer containing ruthenium as a major component having a full-width half maximum (FWHM) of a rocking curve of a (0002) diffraction peak of ruthenium of 3.0° or less. The piezoelectric aluminum nitride thin film formed on the lower electrode has a full-width half maximum (FWHM) of a rocking curve of a (0002) diffraction peak of 2.0° or less.

摘要翻译： 压电薄膜谐振器具有基板和压电层叠结构，其包括下电极，具有c轴取向的压电氮化铝薄膜和在基板上依次形成的上电极。 下电极由包含钌作为主要成分的层的金属薄膜制成，其中钌的（0002）钌衍射峰的摇摆曲线的全宽度半峰值（FWHM）为3.0°以下。 形成在下电极上的压电氮化铝薄膜具有2.0°以下的（0002）衍射峰的摇摆曲线的全宽半最大值（FWHM）。

公开(公告)号：US07140084B2

公开(公告)日：2006-11-28

申请号：US10995447

申请日：2004-11-23

申请人： Tetsuo Yamada ,  Keigo Nagao ,  Chisen Hashimoto

发明人： Tetsuo Yamada ,  Keigo Nagao ,  Chisen Hashimoto

IPC分类号： H04R17/00 ,  H05K3/10 ,  B24B1/00

CPC分类号： H03H9/173 ,  B06B1/0644 ,  G10K11/04 ,  H03H3/02 ,  H03H9/02094 ,  H03H9/02102 ,  H03H9/02149 ,  H03H9/174 ,  H03H9/562 ,  H03H9/564 ,  H03H9/585 ,  H03H9/587 ,  H03H2003/021 ,  H03H2003/0428 ,  Y10S977/888 ,  Y10T29/42 ,  Y10T29/49155

摘要： A method of producing a thin film bulk acoustic resonator having a piezoelectric layer, a first electrode joined to a first surface of the piezoelectric layer, and a second electrode joined to a second surface of the piezoelectric layer, which is located at the opposite side to the first surface, including the steps of forming a pit on a surface of a substrate; filling the pit with a sacrificial layer; polishing a surface of the sacrificial layer so that the RMS variation of a height of the surface of the sacrificial layer is equal to 25 nm or less; forming the first electrode over a partial area of the surface of the sacrificial layer and a partial area of the surface of the substrate; forming the piezoelectric layer on the first electrode so that RMS variation of a height of the second surface of the piezoelectric layer is equal to 5% or less of a thickness of the piezoelectric layer; forming the second electrode on the piezoelectric layer; and removing the sacrificial layer from the inside of the pit by etching.

摘要翻译： 一种制造具有压电层的薄膜体声波谐振器的方法，连接到压电层的第一表面的第一电极和连接到压电层的第二表面的第二电极，该第二电极位于与压电层相对的一侧 所述第一表面包括在基板的表面上形成凹坑的步骤; 用牺牲层填充坑; 抛光牺牲层的表面，使得牺牲层的表面的高度的RMS变化等于25nm或更小; 在所述牺牲层的表面的部分区域和所述衬底的表面的部分区域上形成所述第一电极; 在第一电极上形成压电层，使得压电层的第二表面的高度的RMS变化等于压电层的厚度的5％以下; 在压电层上形成第二电极; 并通过蚀刻从凹坑的内部去除牺牲层。

公开(公告)号：US06936837B2

公开(公告)日：2005-08-30

申请号：US10477308

申请日：2002-05-10

申请人： Tetsuo Yamada ,  Keigo Nagao ,  Chisen Hashimoto ,  Morito Akiyama ,  Naohiro Ueno ,  Hiroshi Tateyama

发明人： Tetsuo Yamada ,  Keigo Nagao ,  Chisen Hashimoto ,  Morito Akiyama ,  Naohiro Ueno ,  Hiroshi Tateyama

IPC分类号： H03H9/02 ,  H03H9/56 ,  H03H9/58 ,  H01L47/00

CPC分类号： H03H9/174 ,  H03H9/02094 ,  H03H9/562 ,  H03H9/564 ,  H03H9/585 ,  H03H9/588 ,  Y10S438/90

摘要： A thin film bulk acoustic resonator comprises a substrate (12) of a silicon single crystal, a base film (13) formed on the substrate (12) and composed of a dielectric film mainly containing silicon oxide, and a piezoelectric stacked structure (14) formed on the base film (13). A vibratory section (21) composed of a part of the base film (13) and a part of the piezoelectric stacked structure (14). The piezoelectric stacked structure (14) includes a lower electrode (15), a piezoelectric film (16), and an upper electrode (17) formed in this order from below. The substrate (12) had a via hole (20) in the region corresponding to the vibratory section (21). The via hole forms a space for allowing vibration of the vibratory section (21). The piezoelectric film (16) is an aluminum nitride thin film containing 0.2 to 3.0 atom % of alkaline earth metal and/or a rare earth metal. Thus, the thin film bulk acoustic resonator has a high performance such as a large electromechanical coupling coefficient, an excellent acoustic quality factor (Q) and an excellent frequency-temperature characteristic.

摘要翻译： 薄膜体声波谐振器包括硅单晶的衬底（12），形成在衬底（12）上并由主要包含氧化硅的电介质膜构成的基膜（13）和压电堆叠结构（14） 形成在基膜（13）上。 由所述基膜（13）的一部分和所述压电堆叠结构（14）的一部分构成的振动部（21）。 压电堆叠结构（14）包括下部电极（15），压电膜（16）和从下方依次形成的上部电极（17）。 基板（12）在对应于振动部分（21）的区域中具有通孔（20）。 通孔形成用于允许振动部分（21）振动的空间。 压电膜（16）是含有0.2〜3.0原子％的碱土金属和/或稀土金属的氮化铝薄膜。 因此，薄膜体声波谐振器具有高的机电耦合系数，良好的声学质量因子（Q）和优异的频率 - 温度特性等性能。

公开(公告)号：US06842088B2

公开(公告)日：2005-01-11

申请号：US10142233

申请日：2002-05-09

申请人： Tetsuo Yamada ,  Keigo Nagao ,  Chisen Hashimoto

发明人： Tetsuo Yamada ,  Keigo Nagao ,  Chisen Hashimoto

IPC分类号： H04R19/02 ,  B06B1/06 ,  G10K11/04 ,  H01L41/09 ,  H01L41/22 ,  H01L41/313 ,  H03H3/02 ,  H03H9/02 ,  H03H9/05 ,  H03H9/13 ,  H03H9/17 ,  H03H9/56 ,  H03H9/58 ,  H04R31/00 ,  H03H9/15 ,  H03H9/54

CPC分类号： H03H9/173 ,  B06B1/0644 ,  G10K11/04 ,  H03H3/02 ,  H03H9/02094 ,  H03H9/02102 ,  H03H9/02149 ,  H03H9/174 ,  H03H9/562 ,  H03H9/564 ,  H03H9/585 ,  H03H9/587 ,  H03H2003/021 ,  H03H2003/0428 ,  Y10S977/888 ,  Y10T29/42 ,  Y10T29/49155

摘要： A pit (52) is formed in a substrate comprising a silicon wafer (51) on a surface of which a silicon oxide thin layer (53) is formed. A sandwich structure (60) comprising a piezoelectric layer (62) and lower and upper electrodes (61, 63) joined to both surfaces of the piezoelectric layer is disposed so as to stride over the pit (52). The upper surface of the lower electrode (61) and the lower surface of the piezoelectric layer (62) joined to the upper surface of the lower electrode are treated so that the RMS variation of the height thereof is equal to 25 nm or less. The thickness of the lower electrode (61) is set to 150 nm or less. According to such a structure, there is provided a high-performance thin film bulk acoustic resonator which are excellent in electromechanical coupling coefficient and acoustic quality factor.

摘要翻译： 在其表面上形成有硅晶片（51）的基板中形成有凹坑（52），其形成有氧化硅薄层（53）。 包括压电层（62）的三明治结构（60）和与压电层的两个表面接合的下电极和上电极（61,63），以跨越凹坑（52）。 处理下电极（61）的上表面和接合到下电极的上表面的压电层（62）的下表面，使得其高度的RMS变化等于25nm或更小。 下电极（61）的厚度设定为150nm以下。 根据这样的结构，提供了机电耦合系数和声音质量因子优异的高性能薄膜体声波谐振器。