公开(公告)号：US10832892B2

公开(公告)日：2020-11-10

申请号：US16478770

申请日：2018-01-04

Applicant: Tokyo Electron Limited

Inventor： Kazuki Takahashi ,  Yuki Kawada ,  Naoki Matsumoto ,  Takahiro Senda ,  Koji Koyama ,  Shohei Fukano ,  Jun Yoshikawa ,  Hiroyuki Kondo ,  Takashi Minakawa

IPC: H01J37/32 ,  H05H1/46

Abstract: An antenna according to an aspect includes: a dielectric window having a first surface and a second surface, the second surface having an annular recessed surface and a flat surface surrounded by the recessed surface; a slot plate; a dielectric plate; a heat transfer member made of metal and having an upper surface and a lower surface opposing each other; a cooling jacket; and a heater, in which the upper surface includes a plurality of first regions and a second region, the cooling jacket is mounted on the plurality of first regions, the second region is recessed further toward the lower surface side than the plurality of first regions, the heater is mounted on the second region, and each of the plurality of first regions is provided at a position at least partially overlapping with the flat surface when viewed in a direction parallel to a central axis.

公开(公告)号：US20170103874A1

公开(公告)日：2017-04-13

申请号：US15285587

申请日：2016-10-05

Applicant: Tokyo Electron Limited

Inventor： Kazushi Kaneko ,  Koji Koyama

IPC: H01J37/32

CPC classification number: H01J37/32229 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/32266 ,  H01J37/32302 ,  H01J37/32311 ,  H01J37/32935 ,  H01J2237/327

Abstract: Detection accuracy of a power of a progressive wave and detection accuracy of a power of a reflection wave can be improved. In a plasma processing apparatus, a first directional coupler is provided in a first waveguide which is configured to connect a microwave generating unit and a first port of a circulator. A first detector is connected to the first directional coupler. A second port of the circulator is connected to a plasma generating unit via a second waveguide. Further, a second directional coupler is provided in a third waveguide which is configured to connect a third port of the circulator and a dummy load. A second detector is connected to the second directional coupler.

公开(公告)号：US20150096882A1

公开(公告)日：2015-04-09

申请号：US14402371

申请日：2013-06-14

Applicant: Tokyo Electron Limited

Inventor： Naoki Matsumoto ,  Koji Koyama ,  Toshihisa Ozu ,  Shota Yoshimura

IPC: H01J37/32 ,  C23F4/00

CPC classification number: H01J37/32449 ,  C23F4/00 ,  H01J37/321 ,  H01J37/3244 ,  H01L21/31116 ,  H01L21/32134

Abstract: A plasma processing apparatus 1 includes a central inlet unit that introduces a processing gas containing at least one of an Ar gas, a He gas and an etching gas toward a central portion of a wafer W; a peripheral inlet unit 61 that introduces the processing gas toward a periphery portion thereof; a flow rate adjusting unit that adjusts a flow rate of the processing gas introduced toward the central portion thereof from the central inlet unit 55 and a flow rate of the processing gas introduced toward the periphery portion thereof from the peripheral inlet unit 61; and a controller 49 that controls the flow rates of the processing gas adjusted by the flow rate adjusting unit such that a partial pressure ratio of the He gas to the Ar gas contained in the processing gas is equal to or higher than a preset value.

Abstract translation: 等离子体处理装置1包括：中心入口单元，其向晶片W的中心部分引入含有Ar气体，He气体和蚀刻气体中的至少一种的处理气体; 外围入口单元61，其将处理气体朝向其周边部分引入; 流量调节单元，其从中央入口单元55调节从其中心部分引入的处理气体的流量和从周边入口单元61向其周边部分引入的处理气体的流量; 以及控制器49，其控制由流量调节单元调节的处理气体的流量，使得处理气体中包含的He气体与Ar气体的分压比等于或高于预设值。

公开(公告)号：US11217430B2

公开(公告)日：2022-01-04

申请号：US16563528

申请日：2019-09-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masaki Inoue ,  Koji Koyama ,  Yasutaka Sakai

IPC: H01J37/32 ,  H05H1/46

Abstract: A plasma processing apparatus comprises a processing chamber, a gas supply unit, a power supply unit and a frequency control unit. The processing chamber accommodates a target object. The gas supply unit supplies a processing gas into the processing chamber. The power supply unit supplies a power of a predetermined frequency band into the processing chamber to generate plasma of the processing gas in the processing chamber. The frequency control unit sweeps a frequency of the power supplied into the processing chamber by the power supply unit from a first frequency to a second frequency at the time of generating the plasma of the processing gas in the processing chamber.

公开(公告)号：US20180211818A1

公开(公告)日：2018-07-26

申请号：US15746154

申请日：2016-07-19

Applicant: Tokyo Electron Limited

Inventor： Shinji Kubota ,  Takashi Dokan ,  Koji Koyama ,  Naoki Matsumoto

IPC: H01J37/32

CPC classification number: H01J37/3299 ,  H01J37/32302 ,  H01J37/32311 ,  H01J2237/24564

Abstract: A plasma processing apparatus includes a processing vessel; a carrier wave group generating unit configured to generate a carrier wave group including multiple carrier waves having different frequencies belonging to a preset frequency band centered on a predetermined center frequency; a plasma generating unit configured to generate plasma by using the carrier wave group; a spectrum detecting unit configured to detect a progressive wave spectrum and a reflection wave spectrum of the carrier wave group; and a control unit configured to calculate, by using the progressive wave spectrum and the reflection wave spectrum, an absorption power which is a power of the carrier wave group absorbed into the plasma, and configured to adjust a parameter, which varies a minimum value of the reflection wave spectrum and a frequency corresponding to the minimum value, such that the absorption power becomes equal to or larger than a threshold value.

公开(公告)号：US20140312767A1

公开(公告)日：2014-10-23

申请号：US14357155

申请日：2012-11-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Caizhong Tian ,  Naoki Matsumoto ,  Koji Koyama ,  Naoki Mihara ,  Kazuki Takahashi ,  Jun Yoshikawa ,  Kazuki Moyama ,  Takehiro Tanikawa

IPC: H01J37/32

CPC classification number: H01J37/32238

Abstract: A dielectric window for a plasma treatment device for a plasma treatment device that uses microwaves as a plasma source. The dielectric window is circular-plate-shaped and allows microwaves to propagate. The dielectric window has a recess that has an opening on the lower-surface side and that indents in the plate thickness direction of the dielectric window, and is provided to the lower surface at which plasma is generated when the dielectric window is provided to the plasma treatment device. The recess has a bottom surface extending in the direction perpendicular to the plate thickness direction, and a side surface extending in the plate thickness direction from the circumferential edge of the bottom surface toward the opening of the recess. In addition, an inclined surface extends at an incline relative to the plate thickness direction from the opening-side circumferential edge of the side surface toward the opening of the recess.

Abstract translation: 一种用于等离子体处理装置的等离子体处理装置的电介质窗，其使用微波作为等离子体源。 电介质窗是圆板形的，允许微波传播。 电介质窗口具有凹部，该凹部在下表面侧具有开口，并且在电介质窗口的板厚度方向上具有凹口，并且当将电介质窗设置到等离子体时设置在产生等离子体的下表面 治疗装置。 所述凹部具有沿垂直于所述板厚方向的方向延伸的底面，以及从所述底面的周缘朝向所述凹部的开口在所述板厚方向上延伸的侧面。 此外，倾斜面从侧面的开口侧周缘朝向凹部的开口以相对于板厚方向的倾斜面延伸。

公开(公告)号：US11569068B2

公开(公告)日：2023-01-31

申请号：US15821588

申请日：2017-11-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazushi Kaneko ,  Takashi Hasegawa ,  Koji Koyama ,  Naoki Matsumoto

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a microwave output unit, a wave guide tube, a tuner, a demodulation unit, and a calculation unit. The microwave output unit outputs a microwave having power corresponding to setting power while frequency-modulating the microwave in a setting frequency range. The wave guide tube guides the microwave to an antenna of a chamber main body. The tuner is provided in the wave guide tube and adjusts a position of a movable plate. The demodulation unit is provided in the wave guide tube, and acquires travelling wave power and reflected wave power for each frequency. The calculation unit calculates a frequency at which a reflection coefficient, which is calculated on the basis of the travelling wave power and the reflected wave power, for each frequency becomes a minimum point as an absorption frequency.

公开(公告)号：US10553402B2

公开(公告)日：2020-02-04

申请号：US16394190

申请日：2019-04-25

Applicant: Tokyo Electron Limited

Inventor： Yuki Kawada ,  Naoki Matsumoto ,  Koji Koyama ,  Ayako Ito ,  Takahiro Senda

IPC: H01J37/32

Abstract: An antenna device according to an exemplary embodiment radiates electromagnetic waves. In the antenna device, a dielectric window is in contact with a lower wall of a first waveguide, the first waveguide is provided between the dielectric window and a second waveguide and extends in a direction crossing a tube axis of the second waveguide, a dispersion part in the first waveguide disperses the electromagnetic waves in the first waveguide, two inner conductors disposed at different distances from the tube axis and connected to the dielectric window include coaxial conversion parts which cause propagation of the electromagnetic waves dispersed by the dispersion part to direct to the dielectric window side, a body length of the inner conductor most distant from the tube axis, out of body lengths of the two inner conductors, is longer, and a front surface of the dielectric window does not have irregularities.

公开(公告)号：US09048070B2

公开(公告)日：2015-06-02

申请号：US14357155

申请日：2012-11-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Caizhong Tian ,  Naoki Matsumoto ,  Koji Koyama ,  Naoki Mihara ,  Kazuki Takahashi ,  Jun Yoshikawa ,  Kazuki Moyama ,  Takehiro Tanikawa

IPC: H05B31/26 ,  H01J37/32

CPC classification number: H01J37/32238

Abstract: A dielectric window for a plasma treatment device for a plasma treatment device that uses microwaves as a plasma source. The dielectric window is circular-plate-shaped and allows microwaves to propagate. The dielectric window has a recess that has an opening on the lower-surface side and that indents in the plate thickness direction of the dielectric window, and is provided to the lower surface at which plasma is generated when the dielectric window is provided to the plasma treatment device. The recess has a bottom surface extending in the direction perpendicular to the plate thickness direction, and a side surface extending in the plate thickness direction from the circumferential edge of the bottom surface toward the opening of the recess. In addition, an inclined surface extends at an incline relative to the plate thickness direction from the opening-side circumferential edge of the side surface toward the opening of the recess.

Abstract translation: 一种用于等离子体处理装置的等离子体处理装置的电介质窗，其使用微波作为等离子体源。 电介质窗是圆板形的，允许微波传播。 电介质窗口具有凹部，该凹部在下表面侧具有开口，并且在电介质窗口的板厚度方向上具有凹口，并且当将电介质窗设置到等离子体时设置在产生等离子体的下表面 治疗装置。 所述凹部具有沿垂直于所述板厚方向的方向延伸的底面，以及从所述底面的周缘朝向所述凹部的开口在所述板厚方向上延伸的侧面。 此外，倾斜面从侧面的开口侧周缘朝向凹部的开口以相对于板厚方向的倾斜面延伸。

公开(公告)号：US10896811B2

公开(公告)日：2021-01-19

申请号：US16552372

申请日：2019-08-27

Applicant: Tokyo Electron Limited

Inventor： Ayako Ito ,  Koji Koyama ,  Yuki Kawada ,  Takahiro Senda ,  Naoki Matsumoto

IPC: H01J37/32 ,  H05H1/24 ,  H01P1/08

Abstract: In one exemplary embodiment, a second waveguide is connected to an upper wall of a first waveguide and communicates with the first waveguide, a dielectric window is in contact with a lower wall of the first waveguide, a first inner conductor penetrates an upper wall, is electrically connected with the upper wall, and extends along the direction of a tube axis from an inside of the first waveguide to an inside of a third waveguide, the third waveguide is connected to the lower wall on the dielectric window side and communicates with the first waveguide, a first opening end of the third waveguide is connected to the dielectric window, and a drive device is connected to the first inner conductor, and is configured to drive the first inner conductor in the direction of the tube axis.