公开(公告)号：US12094697B2

公开(公告)日：2024-09-17

申请号：US18232834

申请日：2023-08-11

Applicant: Tokyo Electron Limited

Inventor： Toshimasa Kobayashi ,  Kazuki Takahashi

IPC: H01J37/32 ,  B01D53/04

CPC classification number: H01J37/32844 ,  B01D53/0407 ,  H01J37/32229 ,  H01J37/3244 ,  H01J37/32871 ,  B01D2253/34 ,  H01J37/32311

Abstract: A plasma processing apparatus includes: a processing container in which a mounting stage mounted with a substrate is provided and a plasma process is performed on the substrate; an exhaust passage which is provided around the mounting stage and through which a gas containing a by-product released by the plasma process flows; and a first adsorption member which is arranged along an inner wall surface of the exhaust passage and of which a surface is roughened to adsorb the by-product.

公开(公告)号：US11756774B2

公开(公告)日：2023-09-12

申请号：US16939076

申请日：2020-07-27

Applicant: Tokyo Electron Limited

Inventor： Toshimasa Kobayashi ,  Kazuki Takahashi

IPC: H01J37/32 ,  B01D53/04

CPC classification number: H01J37/32844 ,  B01D53/0407 ,  H01J37/3244 ,  H01J37/32229 ,  H01J37/32871 ,  B01D2253/34 ,  H01J37/32311

Abstract: A plasma processing apparatus includes: a processing container in which a mounting stage mounted with a substrate is provided and a plasma process is performed on the substrate; an exhaust passage which is provided around the mounting stage and through which a gas containing a by-product released by the plasma process flows; and a first adsorption member which is arranged along an inner wall surface of the exhaust passage and of which a surface is roughened to adsorb the by-product.

公开(公告)号：US10832892B2

公开(公告)日：2020-11-10

申请号：US16478770

申请日：2018-01-04

Applicant: Tokyo Electron Limited

Inventor： Kazuki Takahashi ,  Yuki Kawada ,  Naoki Matsumoto ,  Takahiro Senda ,  Koji Koyama ,  Shohei Fukano ,  Jun Yoshikawa ,  Hiroyuki Kondo ,  Takashi Minakawa

IPC: H01J37/32 ,  H05H1/46

Abstract: An antenna according to an aspect includes: a dielectric window having a first surface and a second surface, the second surface having an annular recessed surface and a flat surface surrounded by the recessed surface; a slot plate; a dielectric plate; a heat transfer member made of metal and having an upper surface and a lower surface opposing each other; a cooling jacket; and a heater, in which the upper surface includes a plurality of first regions and a second region, the cooling jacket is mounted on the plurality of first regions, the second region is recessed further toward the lower surface side than the plurality of first regions, the heater is mounted on the second region, and each of the plurality of first regions is provided at a position at least partially overlapping with the flat surface when viewed in a direction parallel to a central axis.

公开(公告)号：US09048070B2

公开(公告)日：2015-06-02

申请号：US14357155

申请日：2012-11-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Caizhong Tian ,  Naoki Matsumoto ,  Koji Koyama ,  Naoki Mihara ,  Kazuki Takahashi ,  Jun Yoshikawa ,  Kazuki Moyama ,  Takehiro Tanikawa

IPC: H05B31/26 ,  H01J37/32

CPC classification number: H01J37/32238

Abstract: A dielectric window for a plasma treatment device for a plasma treatment device that uses microwaves as a plasma source. The dielectric window is circular-plate-shaped and allows microwaves to propagate. The dielectric window has a recess that has an opening on the lower-surface side and that indents in the plate thickness direction of the dielectric window, and is provided to the lower surface at which plasma is generated when the dielectric window is provided to the plasma treatment device. The recess has a bottom surface extending in the direction perpendicular to the plate thickness direction, and a side surface extending in the plate thickness direction from the circumferential edge of the bottom surface toward the opening of the recess. In addition, an inclined surface extends at an incline relative to the plate thickness direction from the opening-side circumferential edge of the side surface toward the opening of the recess.

Abstract translation: 一种用于等离子体处理装置的等离子体处理装置的电介质窗，其使用微波作为等离子体源。 电介质窗是圆板形的，允许微波传播。 电介质窗口具有凹部，该凹部在下表面侧具有开口，并且在电介质窗口的板厚度方向上具有凹口，并且当将电介质窗设置到等离子体时设置在产生等离子体的下表面 治疗装置。 所述凹部具有沿垂直于所述板厚方向的方向延伸的底面，以及从所述底面的周缘朝向所述凹部的开口在所述板厚方向上延伸的侧面。 此外，倾斜面从侧面的开口侧周缘朝向凹部的开口以相对于板厚方向的倾斜面延伸。

公开(公告)号：US09324542B2

公开(公告)日：2016-04-26

申请号：US14426671

申请日：2013-09-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Naoki Matsumoto ,  Yugo Tomita ,  Naoki Mihara ,  Kazuki Takahashi ,  Michitaka Aita ,  Jun Yoshikawa ,  Takahiro Senda ,  Yoshiyasu Sato ,  Kazuyuki Kato ,  Kenji Sudou ,  Hitoshi Mizusugi

IPC: H01L21/302 ,  H01L21/461 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/311

CPC classification number: H01J37/32449 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32238 ,  H01J37/3244 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32137 ,  H01L29/66795

Abstract: In a plasma processing apparatus of an exemplary embodiment, energy of microwaves is introduced from an antenna into the processing container through a dielectric window. The plasma processing apparatus includes a central introducing unit and a peripheral introducing unit. A central introduction port of the central introducing unit injects a gas just below the dielectric window. A plurality of peripheral introduction ports of the peripheral introducing unit injects a gas towards a periphery of the placement region. The central introducing unit is connected to with a plurality of first gas sources including a reactive gas source and a rare gas source through a plurality of first flow rate control units. The peripheral introducing unit is connected to with a plurality of second gas sources including a reactive gas source and a rare gas source through a plurality of second flow rate control units.

Abstract translation: 在示例性实施例的等离子体处理装置中，微波的能量通过电介质窗从天线引入处理容器。 等离子体处理装置包括中央引入单元和外围引入单元。 中央引入单元的中心引入口喷射恰好在电介质窗口下面的气体。 周边引入单元的多个周边引入口朝向放置区域的周边注入气体。 中央引入单元通过多个第一流量控制单元与包括反应气体源和稀有气体源的多个第一气体源连接。 周边引入单元通过多个第二流量控制单元与包括反应气体源和稀有气体源的多个第二气体源连接。

公开(公告)号：US20150228459A1

公开(公告)日：2015-08-13

申请号：US14426671

申请日：2013-09-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Naoki Matsumoto ,  Yugo Tomita ,  Naoki Mihara ,  Kazuki Takahashi ,  Michitaka Aita ,  Jun Yoshikawa ,  Takahiro Senda ,  Yoshiyasu Sato ,  Kazuyuki Kato ,  Kenji Sudou ,  Hitoshi Mizusugi

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01J37/32449 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32238 ,  H01J37/3244 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32137 ,  H01L29/66795

Abstract: In a plasma processing apparatus of an exemplary embodiment, energy of microwaves is introduced from an antenna into the processing container through a dielectric window. The plasma processing apparatus includes a central introducing unit and a peripheral introducing unit. A central introduction port of the central introducing unit injects a gas just below the dielectric window. A plurality of peripheral introduction ports of the peripheral introducing unit injects a gas towards a periphery of the placement region. The central introducing unit is connected to with a plurality of first gas sources including a reactive gas source and a rare gas source through a plurality of first flow rate control units. The peripheral introducing unit is connected to with a plurality of second gas sources including a reactive gas source and a rare gas source through a plurality of second flow rate control units.

Abstract translation: 在示例性实施例的等离子体处理装置中，微波的能量通过电介质窗从天线引入处理容器。 等离子体处理装置包括中央引入单元和外围引入单元。 中央引入单元的中心引入口喷射恰好在电介质窗口下面的气体。 周边引入单元的多个周边引入口朝向放置区域的周边注入气体。 中央引入单元通过多个第一流量控制单元与包括反应气体源和稀有气体源的多个第一气体源连接。 周边引入单元通过多个第二流量控制单元与包括反应气体源和稀有气体源的多个第二气体源连接。

公开(公告)号：US20140312767A1

公开(公告)日：2014-10-23

申请号：US14357155

申请日：2012-11-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Caizhong Tian ,  Naoki Matsumoto ,  Koji Koyama ,  Naoki Mihara ,  Kazuki Takahashi ,  Jun Yoshikawa ,  Kazuki Moyama ,  Takehiro Tanikawa

IPC: H01J37/32

CPC classification number: H01J37/32238

Abstract: A dielectric window for a plasma treatment device for a plasma treatment device that uses microwaves as a plasma source. The dielectric window is circular-plate-shaped and allows microwaves to propagate. The dielectric window has a recess that has an opening on the lower-surface side and that indents in the plate thickness direction of the dielectric window, and is provided to the lower surface at which plasma is generated when the dielectric window is provided to the plasma treatment device. The recess has a bottom surface extending in the direction perpendicular to the plate thickness direction, and a side surface extending in the plate thickness direction from the circumferential edge of the bottom surface toward the opening of the recess. In addition, an inclined surface extends at an incline relative to the plate thickness direction from the opening-side circumferential edge of the side surface toward the opening of the recess.

Abstract translation: 一种用于等离子体处理装置的等离子体处理装置的电介质窗，其使用微波作为等离子体源。 电介质窗是圆板形的，允许微波传播。 电介质窗口具有凹部，该凹部在下表面侧具有开口，并且在电介质窗口的板厚度方向上具有凹口，并且当将电介质窗设置到等离子体时设置在产生等离子体的下表面 治疗装置。 所述凹部具有沿垂直于所述板厚方向的方向延伸的底面，以及从所述底面的周缘朝向所述凹部的开口在所述板厚方向上延伸的侧面。 此外，倾斜面从侧面的开口侧周缘朝向凹部的开口以相对于板厚方向的倾斜面延伸。