中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

19 records (took 0.016 seconds)

    Microwave control method
    1.
    发明授权
    Microwave control method 有权

    公开(公告)号：US10679826B2

    公开(公告)日：2020-06-09

    申请号：US15646290

    申请日：2017-07-11

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Jun Yoshikawa ,  Naoki Matsumoto ,  Kazushi Kaneko

    IPC: B23K10/00 ,  H01J37/32 ,  H01J37/244

    Abstract: A microwave control method is used in a microwave plasma processing apparatus including a microwave generation unit, a waveguide for guiding a microwave generated by the microwave generation unit, a tuner for controlling a position of a movable short-circuiting plate, and a stub provided between the tuner and an antenna in the waveguide and insertable into an inner space of the waveguide. The method includes detecting the position of the movable short-circuiting plate controlled by the tuner for the microwave outputted by the microwave generation unit, determining whether or not a difference between a reference position and the detected position of the movable short-circuiting plate is within a tolerable range, and controlling an insertion length of the stub into the inner space of the waveguide when it is determined that the difference between the position of the movable short-circuiting plate and the reference position is not within the tolerable range.

    Plasma processing apparatus
    2.
    发明授权
    Plasma processing apparatus 有权
    等离子体处理装置

    公开(公告)号：US09574270B2

    公开(公告)日：2017-02-21

    申请号：US14605338

    申请日：2015-01-26

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Jun Yoshikawa ,  Michitaka Aita

    IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  C23C16/511 ,  C23C16/34 ,  H01J37/32

    CPC classification number: C23C16/511 ,  C23C16/345 ,  H01J37/32192 ,  H01J37/3222

    Abstract: Disclosed is provides a plasma processing apparatus that processes a workpiece. The plasma processing apparatus includes: a processing container configured to accommodate the workpiece; a coaxial waveguide configured to transmit microwaves generated in a microwave generator; and a slow wave plate configured to adjust a wavelength of the microwaves transmitted from the coaxial waveguide and to introduce the microwaves into the processing container. A lower end portion of an inner conductor of the coaxial waveguide has a tapered shape of which a diameter increases downwardly, the slow wave plate has an annular shape in a plan view, and the inner surface of the slow wave plate encloses the lower end portion of the inner conductor and is located more outside than an inner surface of an outer conductor of the coaxial waveguide in a radial direction.

    Abstract translation: 公开了一种处理工件的等离子体处理装置。 等离子体处理装置包括：处理容器，其构造成容纳工件; 同轴波导，被配置为发送在微波发生器中产生的微波; 以及慢波板，被配置为调节从同轴波导传输的微波的波长并将微波引入处理容器。 同轴波导的内导体的下端部具有直径向下增大的锥形形状，慢波板在俯视图中呈环状，慢波板的内表面包围下端部 并且位于比同轴波导的外导体的径向外侧更外侧的位置。

    PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
    4.
    发明申请
    PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS 有权
    等离子体处理方法和等离子体处理装置

    公开(公告)号：US20150228459A1

    公开(公告)日：2015-08-13

    申请号：US14426671

    申请日：2013-09-20

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Naoki Matsumoto ,  Yugo Tomita ,  Naoki Mihara ,  Kazuki Takahashi ,  Michitaka Aita ,  Jun Yoshikawa ,  Takahiro Senda ,  Yoshiyasu Sato ,  Kazuyuki Kato ,  Kenji Sudou ,  Hitoshi Mizusugi

    IPC: H01J37/32 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/683 ,  H01L21/67

    CPC classification number: H01J37/32449 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32238 ,  H01J37/3244 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32137 ,  H01L29/66795

    Abstract: In a plasma processing apparatus of an exemplary embodiment, energy of microwaves is introduced from an antenna into the processing container through a dielectric window. The plasma processing apparatus includes a central introducing unit and a peripheral introducing unit. A central introduction port of the central introducing unit injects a gas just below the dielectric window. A plurality of peripheral introduction ports of the peripheral introducing unit injects a gas towards a periphery of the placement region. The central introducing unit is connected to with a plurality of first gas sources including a reactive gas source and a rare gas source through a plurality of first flow rate control units. The peripheral introducing unit is connected to with a plurality of second gas sources including a reactive gas source and a rare gas source through a plurality of second flow rate control units.

    Abstract translation: 在示例性实施例的等离子体处理装置中，微波的能量通过电介质窗从天线引入处理容器。 等离子体处理装置包括中央引入单元和外围引入单元。 中央引入单元的中心引入口喷射恰好在电介质窗口下面的气体。 周边引入单元的多个周边引入口朝向放置区域的周边注入气体。 中央引入单元通过多个第一流量控制单元与包括反应气体源和稀有气体源的多个第一气体源连接。 周边引入单元通过多个第二流量控制单元与包括反应气体源和稀有气体源的多个第二气体源连接。

    DIELECTRIC WINDOW FOR PLASMA TREATMENT DEVICE, AND PLASMA TREATMENT DEVICE
    5.
    发明申请
    DIELECTRIC WINDOW FOR PLASMA TREATMENT DEVICE, AND PLASMA TREATMENT DEVICE 有权
    用于等离子体处理装置的电介质窗口和等离子体处理装置

    公开(公告)号：US20140312767A1

    公开(公告)日：2014-10-23

    申请号：US14357155

    申请日：2012-11-08

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Caizhong Tian ,  Naoki Matsumoto ,  Koji Koyama ,  Naoki Mihara ,  Kazuki Takahashi ,  Jun Yoshikawa ,  Kazuki Moyama ,  Takehiro Tanikawa

    IPC: H01J37/32

    CPC classification number: H01J37/32238

    Abstract: A dielectric window for a plasma treatment device for a plasma treatment device that uses microwaves as a plasma source. The dielectric window is circular-plate-shaped and allows microwaves to propagate. The dielectric window has a recess that has an opening on the lower-surface side and that indents in the plate thickness direction of the dielectric window, and is provided to the lower surface at which plasma is generated when the dielectric window is provided to the plasma treatment device. The recess has a bottom surface extending in the direction perpendicular to the plate thickness direction, and a side surface extending in the plate thickness direction from the circumferential edge of the bottom surface toward the opening of the recess. In addition, an inclined surface extends at an incline relative to the plate thickness direction from the opening-side circumferential edge of the side surface toward the opening of the recess.

    Abstract translation: 一种用于等离子体处理装置的等离子体处理装置的电介质窗，其使用微波作为等离子体源。 电介质窗是圆板形的，允许微波传播。 电介质窗口具有凹部，该凹部在下表面侧具有开口，并且在电介质窗口的板厚度方向上具有凹口，并且当将电介质窗设置到等离子体时设置在产生等离子体的下表面 治疗装置。 所述凹部具有沿垂直于所述板厚方向的方向延伸的底面，以及从所述底面的周缘朝向所述凹部的开口在所述板厚方向上延伸的侧面。 此外，倾斜面从侧面的开口侧周缘朝向凹部的开口以相对于板厚方向的倾斜面延伸。

    Plasma processing apparatus
    6.
    发明授权
    Plasma processing apparatus 有权
    等离子体处理装置

    公开(公告)号：US09343270B2

    公开(公告)日：2016-05-17

    申请号：US14187466

    申请日：2014-02-24

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Toshihisa Nozawa ,  Jun Yoshikawa ,  Michitaka Aita ,  Masahiro Yamazaki ,  Takehisa Saito ,  Fumihiko Kaji ,  Koji Yamagishi

    IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

    CPC classification number: H01J37/32192 ,  H01J37/32229 ,  H01J37/3244

    Abstract: A plasma processing apparatus includes a processing chamber configured to partition a processing space and a microwave generator configured to generate microwaves for plasma excitation. Further, the plasma processing apparatus includes a dielectric member mounted in the processing chamber so as to seal the processing space, and configured to introduce the microwaves generated by the microwave generator into the processing space. Further, the plasma processing apparatus includes an injector mounted in the dielectric member, and configured to supply the processing gas made in a plasma state due to the microwaves to the processing space through a through-hole formed in the dielectric member. Further, the plasma processing apparatus includes a waveguide plate made of a dielectric material mounted in the injector so as to surround the through-hole of the dielectric member, and configured to guide the microwaves propagated into the dielectric member toward the through-hole to an inside of the injector.

    Abstract translation: 等离子体处理装置包括：处理室，被配置为分隔处理空间;以及微波发生器，被配置为产生用于等离子体激发的微波。 此外，等离子体处理装置包括安装在处理室中的电介质部件，以密封处理空间，并且将微波发生器产生的微波引入处理空间。 此外，等离子体处理装置包括安装在电介质构件中的喷射器，并且构造成通过形成在电介质构件中的通孔将由微波产生的等离子体状态的处理气体提供给处理空间。 此外，等离子体处理装置包括由安装在喷射器中的电介质材料制成的波导板，以便围绕电介质构件的通孔，并被构造成将传播到电介质构件中的微波朝向通孔引导至 注射器内部

    Dielectric window for plasma treatment device, and plasma treatment device
    7.
    发明授权
    Dielectric window for plasma treatment device, and plasma treatment device 有权
    等离子体处理装置的介质窗和等离子体处理装置

    公开(公告)号：US09048070B2

    公开(公告)日：2015-06-02

    申请号：US14357155

    申请日：2012-11-08

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Caizhong Tian ,  Naoki Matsumoto ,  Koji Koyama ,  Naoki Mihara ,  Kazuki Takahashi ,  Jun Yoshikawa ,  Kazuki Moyama ,  Takehiro Tanikawa

    IPC: H05B31/26 ,  H01J37/32

    CPC classification number: H01J37/32238

    Abstract: A dielectric window for a plasma treatment device for a plasma treatment device that uses microwaves as a plasma source. The dielectric window is circular-plate-shaped and allows microwaves to propagate. The dielectric window has a recess that has an opening on the lower-surface side and that indents in the plate thickness direction of the dielectric window, and is provided to the lower surface at which plasma is generated when the dielectric window is provided to the plasma treatment device. The recess has a bottom surface extending in the direction perpendicular to the plate thickness direction, and a side surface extending in the plate thickness direction from the circumferential edge of the bottom surface toward the opening of the recess. In addition, an inclined surface extends at an incline relative to the plate thickness direction from the opening-side circumferential edge of the side surface toward the opening of the recess.

    Abstract translation: 一种用于等离子体处理装置的等离子体处理装置的电介质窗，其使用微波作为等离子体源。 电介质窗是圆板形的，允许微波传播。 电介质窗口具有凹部，该凹部在下表面侧具有开口，并且在电介质窗口的板厚度方向上具有凹口，并且当将电介质窗设置到等离子体时设置在产生等离子体的下表面 治疗装置。 所述凹部具有沿垂直于所述板厚方向的方向延伸的底面，以及从所述底面的周缘朝向所述凹部的开口在所述板厚方向上延伸的侧面。 此外，倾斜面从侧面的开口侧周缘朝向凹部的开口以相对于板厚方向的倾斜面延伸。

    Plasma processing apparatus
    10.
    发明授权
    Plasma processing apparatus 有权

    公开(公告)号：US11456157B2

    公开(公告)日：2022-09-27

    申请号：US16752153

    申请日：2020-01-24

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Jun Yoshikawa

    IPC: H01J37/32

    Abstract: A plasma processing apparatus includes a processing container that defines a processing space, a gas supply unit provided on a sidewall of the processing container and configured to supply gas to the processing space, a dielectric member having a facing surface that faces the processing space, and an antenna provided on a surface opposite to the facing surface of the dielectric member and configured to radiate microwaves that turn the gas into plasma to the processing space through the dielectric member. The gas supply unit includes a transport hole transporting the gas to a position where the gas does not reach the processing space in the inside of the sidewall of the processing container and an injection hole communicated to the transport hole and configured to inject the gas transported to the position into the processing space. The injection hole has a diameter larger than that of the transport hole.

Patent Agency Ranking