公开(公告)号：US20240068921A1

公开(公告)日：2024-02-29

申请号：US18505066

申请日：2023-11-08

Applicant: Tokyo Electron Limited

Inventor： Satoru TERUUCHI ,  Jun HIROSE ,  Kazuya NAGASEKI ,  Shinji HIMORI

IPC: G01N15/02

CPC classification number: G01N15/0227 ,  G01N15/0211 ,  G01N2015/1087

Abstract: A particle monitoring system includes a light emitting device for irradiating an inside of a plasma processing apparatus with light, and a monitoring device to be placed on a stage in the plasma processing apparatus. The monitoring device includes a base substrate, a plurality of imaging devices, and a control device. The base substrate has a plate shape. The plurality of imaging devices have optical axes facing upward on the base substrate, and are disposed apart from each other to capture images including scattered light from the particle irradiated with the light. The control device discriminates the particle in the images captured by the plurality of imaging devices.

公开(公告)号：US20220013387A1

公开(公告)日：2022-01-13

申请号：US17484914

申请日：2021-09-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenichiro YAMADA ,  Satoru TERUUCHI ,  Kenichiro NAKAMURA ,  Takari YAMAMOTO

IPC: H01L21/67 ,  C23C16/46 ,  C23C16/509 ,  H01J37/32 ,  C23C16/50 ,  C23C16/52 ,  H01L21/683 ,  H05B1/02

Abstract: A substrate processing system includes a substrate processing apparatus and a control device. The substrate processing apparatus includes a chamber, and a placing table provided inside the chamber. The placing table places a substrate thereon, and includes a base and an electrostatic chuck provided on an upper surface of the base. The electrostatic chuck has a plurality of division regions each provided with a heater therein. The substrate processing system also includes a control device that includes a measuring unit that measures a resistance value of the heater for each of the division regions, an estimating unit that estimates a temperature of each of the division regions based on the resistance value of the heater measured by the measuring unit, and a power controller that controls a power supplied to the heater for each of the division regions based on the temperature estimated by the estimating unit.

公开(公告)号：US20240213000A1

公开(公告)日：2024-06-27

申请号：US18421988

申请日：2024-01-25

Applicant: Tokyo Electron Limited

Inventor： Kazuya NAGASEKI ,  Kazuki MOYAMA ,  Shinji HIMORI ,  Masanobu HONDA ,  Satoru TERUUCHI

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32724 ,  H01J37/3244 ,  H01L21/6833 ,  H01J2237/2065

Abstract: A processing method for performing plasma processing on a substrate includes placing a temperature adjustment target onto a support surface of a substrate support in a decompressible processing, forming a heat transfer layer by supplying, through the substrate support, a heat transfer medium including at least one of a liquid medium or a solid medium with fluidity to between the support surface of the substrate support and a back surface of the temperature adjustment target, performing plasma processing on the substrate on the support surface on which the heat transfer layer is formed, and separating the temperature adjustment target from the support surface after the plasma processing.

公开(公告)号：US20200266081A1

公开(公告)日：2020-08-20

申请号：US16866232

申请日：2020-05-04

Applicant: Tokyo Electron Limited

Inventor： Dai KITAGAWA ,  Katsuyuki KOIZUMI ,  Tsutomu NAGAI ,  Daisuke HAYASHI ,  Satoru TERUUCHI

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/683

Abstract: A placing table on an embodiment includes a supporting member and a base. The supporting member includes a placing region provided with a heater, and an outer peripheral region surrounding the placing region. The base includes a first region supporting the placing region thereon, and a second region surrounding the first region. In the second region, through holes are formed. Wirings electrically connected to the heater passes through the through holes of the second region.

公开(公告)号：US20170140954A1

公开(公告)日：2017-05-18

申请号：US15308686

申请日：2015-06-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Dai KITAGAWA ,  Katsuyuki KOIZUMI ,  Tsutomu NAGAI ,  Daisuke HAYASHI ,  Satoru TERUUCHI

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/683

Abstract: A placing table on an embodiment includes a supporting member and a base. The supporting member includes a placing region provided with a heater, and an outer peripheral region surrounding the placing region. The base includes a first region supporting the placing region thereon, and a second region surrounding the first region. In the second region, through holes are formed. Wirings electrically connected to the heater passes through the through holes of the second region.

公开(公告)号：US20170110297A1

公开(公告)日：2017-04-20

申请号：US15309399

申请日：2015-06-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoru TERUUCHI

IPC: H01J37/32 ,  F27D11/02 ,  H05B3/62 ,  H01L21/67 ,  H01L21/683

Abstract: A plasma processing apparatus according to an embodiment includes a processing container, a mounting table, a plurality of heaters, and a power supply device. The mounting table is provided in the processing container. The plurality of heaters are provided in the mounting table. The power supply device supplies electric power to the plurality of heaters. The power supply device includes a plurality of transformers and a plurality of zero-cross control type solid state relays (SSRs). The plurality of transformers are configured to step down a voltage from an alternating-current power source. Each of the plurality of transformers includes a primary coil and a secondary coil. The primary coil is connected to the alternating-current power source. Each of the plurality of SSRs is provided between one corresponding heater among the plurality of heaters and the secondary coil of one corresponding transformer among the plurality of transformers.

公开(公告)号：US20240194459A1

公开(公告)日：2024-06-13

申请号：US18416880

申请日：2024-01-18

Applicant: Tokyo Electron Limited

Inventor： Kazuya NAGASEKI ,  Kazuki MOYAMA ,  Shinji HIMORI ,  Masanobu HONDA ,  Satoru TERUUCHI

IPC: H01J37/32

CPC classification number: H01J37/32724

Abstract: A processing method and corresponding device for performing plasma processing on a substrate includes placing a temperature adjustment target onto a support surface of a substrate support in a processing chamber being decompressible, forming a heat transfer layer for the temperature adjustment target on the support surface of the substrate support, and performing plasma processing on the substrate on the support surface on which the heat transfer layer is formed. The heat transfer layer is deformable and includes at least one of a liquid layer or a deformable solid layer.

公开(公告)号：US20240096608A1

公开(公告)日：2024-03-21

申请号：US18515220

申请日：2023-11-20

Applicant: Tokyo Electron Limited

Inventor： Satoru TERUUCHI ,  Jun HIROSE ,  Kazuya NAGASEKI ,  Shinji HIMORI

IPC: H01J37/32 ,  G01N21/68

CPC classification number: H01J37/32935 ,  G01N21/68 ,  H01J2237/2445 ,  H01J2237/24585 ,  H01L21/67253

Abstract: A plasma monitoring system includes a monitoring device and a control device. The monitoring device is a device to be placed on a stage in the plasma processing apparatus. The monitoring device includes a plate-shaped base substrate, and a plurality of spectroscopes having optical axes facing upward on the base substrate, and being disposed apart from each other to acquire light emission intensities of the plasma. The control device acquires light emission intensity distribution data of the plasma in the plasma processing apparatus based on the light emission intensity acquired by each of the plurality of spectroscopes.

公开(公告)号：US20170372928A1

公开(公告)日：2017-12-28

申请号：US15630549

申请日：2017-06-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenichiro YAMADA ,  Satoru TERUUCHI ,  Kenichiro NAKAMURA ,  Takari YAMAMOTO

IPC: H01L21/67 ,  C23C16/52 ,  C23C16/50 ,  H01J37/32 ,  H05B1/02 ,  H01L21/683

CPC classification number: H01L21/67248 ,  C23C16/46 ,  C23C16/463 ,  C23C16/50 ,  C23C16/5096 ,  C23C16/52 ,  H01J37/32009 ,  H01J37/32724 ,  H01J2237/334 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6831 ,  H05B1/0233

Abstract: Disclosed is a substrate processing system including a substrate processing apparatus; and a control device that controls the substrate processing apparatus. The substrate processing apparatus includes: a chamber; a placing table provided within the chamber; and heaters embedded in the placing table corresponding to division regions, respectively. The control device includes: a holding unit that holds a table for each of the division regions; a measuring unit that measures the resistance value of each of the heaters embedded in the placing table for each of the division regions; and a controller that estimates a temperature of each of the division regions corresponding to the resistance value of each of the heaters measured by the measuring unit with reference to the table for each of the division regions, and controls an electric power to be supplied to each of the heaters so that the estimated temperature becomes a target temperature.