TEMPERATURE CONTROL APPARATUS, TEMPERATURE CONTROL METHOD AND RECORDING MEDIUM
    4.
    发明申请
    TEMPERATURE CONTROL APPARATUS, TEMPERATURE CONTROL METHOD AND RECORDING MEDIUM 审中-公开
    温度控制装置,温度控制方法和记录介质

    公开(公告)号:US20160302258A1

    公开(公告)日:2016-10-13

    申请号:US15090879

    申请日:2016-04-05

    Abstract: A processing system includes a thermo viewer 51 which measures a temperature distribution over a top surface of a semiconductor wafer; a temperature measuring device 14 which measures, for each of divided areas of the semiconductor wafer, a temperature of a portion in the divided area; a median value calculating unit 202 which calculates, for each divided area, a median value of a temperature distribution of the divided area, based on the temperature distribution measured by the thermo viewer 51; an offset calculating unit 204 which calculates, for each divided area, a difference between the median value and the temperature of the portion as an offset; and a temperature control unit 205 which controls, for each divided area, the temperature of the divided area such that the median value becomes equal to a set temperature, based on the offset and the temperature measured by the temperature measuring device 14.

    Abstract translation: 处理系统包括测量半导体晶片的顶表面上的温度分布的热观察器51; 对于半导体晶片的分割区域的每一个测量分割区域中的一部分的温度的温度测量装置14; 中值值计算单元202,其基于由热观察器51测量的温度分布,针对每个分割区域计算分割区域的温度分布的中值; 偏移计算单元204,对于每个分割区域,计算该部分的中值和温度之差作为偏移; 以及温度控制单元205,其基于由温度测量装置14测量的偏移和温度,针对每个分割区域控制分割区域的温度使得中值等于设定温度。

    STRUCTURE FOR AUTOMATIC IN-SITU REPLACEMENT OF A PART OF AN ELECTROSTATIC CHUCK

    公开(公告)号:US20210384060A1

    公开(公告)日:2021-12-09

    申请号:US16892328

    申请日:2020-06-04

    Abstract: A substrate support for use in a reaction chamber includes a base, and an in-situ electrostatic chuck. The chuck includes a first electrode in an upper portion of the chuck that is configured to hold a wafer to an upper surface of the upper portion by a first electrostatic attractive force under a condition of a first voltage is applied to the first electrode, and a second electrode that opposes an upper surface of the base and is configured to hold the chuck to the base by a second electrostatic attractive force under a condition that a second voltage is applied to the second electrode. Under a condition that the second voltage is not supplied to the second electrode, the second electrostatic attractive force is not present and the chuck is freed to be replaced in-situ without also removing the base and without exposing the reaction chamber to external atmosphere.

    PLASMA PROCESSING APPARATUS
    6.
    发明申请

    公开(公告)号:US20180374672A1

    公开(公告)日:2018-12-27

    申请号:US16012959

    申请日:2018-06-20

    Abstract: A plasma processing apparatus includes an external circuit electrically connected through a line to an electrical component in a processing chamber and a filter provided on the line to attenuate or block noise introduced into the line from the electrical component toward the external circuit. The filter includes a coil having constant diameter and coil length; a tubular outer conductor accommodating the coil and forming a distributed constant line in which parallel resonance occurs at multiple frequencies in combination with the coil; and a movable member for changing each winding gap of the coil and provided in an effective section where a specific one or a plurality of parallel resonance frequencies is shifted to a higher frequency side or a lower frequency side in frequency-impedance characteristics of the filter by changing the winding gap of the coil in the effective section in a longitudinal direction of the coil.

    PLACEMENT TABLE AND PLASMA PROCESSING APPARATUS
    7.
    发明申请
    PLACEMENT TABLE AND PLASMA PROCESSING APPARATUS 审中-公开
    放置表和等离子体加工设备

    公开(公告)号:US20150129134A1

    公开(公告)日:2015-05-14

    申请号:US14539397

    申请日:2014-11-12

    CPC classification number: H01L21/6831 H01L21/67103

    Abstract: A placement table includes: a base; an electrostatic chuck disposed on the base and including a placement surface on which a workpiece is placed; a plurality of heat generating members disposed at a side opposite to the placement surface of the electrostatic chuck; a power supply configured to generate a current for causing each of the plurality of heat generating members to generate heat; a plurality of electric wires installed to extend in a direction crossing the placement surface from the plurality of heat generating members, respectively, and configured to connect the power supply with the heat generating members, respectively; and a filter mounted on each of the plurality of electric wires to remove a high frequency component having a frequency higher than that of the current generated by the power supply.

    Abstract translation: 放置表包括:基座; 静电吸盘,其设置在所述基座上并且包括放置工件的放置面; 多个发热体,配置在与所述静电吸盘的配置面相反的一侧; 电源,被配置为产生用于使所述多个发热部件中的每一个发热的电流; 多个电线分别安装成沿与所述多个发热件相对的所述放置表面的方向延伸,并分别连接所述电源与所述发热元件; 以及安装在所述多根电线的每一根上的滤波器,以去除频率高于由所述电源产生的电流的频率的高频分量。

    TRANSFER DEVICE, TRANSFER SYSTEM, AND END EFFECTOR

    公开(公告)号:US20250069940A1

    公开(公告)日:2025-02-27

    申请号:US18946976

    申请日:2024-11-14

    Abstract: A transfer device for simultaneously or separately transferring a wafer and a consumable part having a circular shape is disclosed. The consumable part is disposed in a wafer processing module, and the outer diameter of the consumable part is larger than the outer diameter of the wafer. The transfer device comprises an end effector configured to place the wafer and the consumable part thereon simultaneously or separately, an arm configured to move the end effector, and a controller configured to control the arm, to place the consumable part on the end effector such that the center of gravity of the consumable part coincides with a first position when transferring the consumable part, and to place the wafer on the end effector such that the center of gravity of the wafer coincides with a second position between the first position and front ends of the end effector when transferring the wafer.

    PLASMA PROCESSING APPARATUS
    9.
    发明申请

    公开(公告)号:US20210280385A1

    公开(公告)日:2021-09-09

    申请号:US17322241

    申请日:2021-05-17

    Abstract: A plasma processing apparatus includes an external circuit electrically connected through a line to an electrical component in a processing chamber and a filter provided on the line to attenuate or block noise introduced into the line from the electrical component toward the external circuit. The filter includes a coil having constant diameter and coil length; a tubular outer conductor accommodating the coil and forming a distributed constant line in which parallel resonance occurs at multiple frequencies in combination with the coil; and a movable member for changing each winding gap of the coil and provided in an effective section where a specific one or a plurality of parallel resonance frequencies is shifted to a higher frequency side or a lower frequency side in frequency-impedance characteristics of the filter by changing the winding gap of the coil in the effective section in a longitudinal direction of the coil.

    SUBSTRATE PROCESSING SYSTEM AND METHOD FOR REPLACING EDGE RING

    公开(公告)号:US20210118648A1

    公开(公告)日:2021-04-22

    申请号:US17069411

    申请日:2020-10-13

    Inventor: Daisuke HAYASHI

    Abstract: A substrate processing system allows selective replacement of one or both of two rings included in an edge ring. The substrate processing system includes a process module, a transfer robot, and a replacing module. In the process module, an edge ring is lifted from a substrate support by at least one lifter. The edge ring includes a first ring and a second ring. The edge ring is transferred between the process module and the replacing module by the transfer robot. In the replacing module, at least one of the first ring or the second ring included in the edge ring is replaced with a replacement part to prepare a replacement edge ring. The replacement edge ring is transferred between the replacing module and the process module by the transfer robot.

Patent Agency Ranking