Abstract:
A measurement part controls power supplied to a heater such that a temperature of the heater becomes constant by using a heater controller, and measures the supplied power in an unignited state in which plasma is not ignited and a transient state in which the power supplied to the heater decreases after plasma is ignited. A parameter calculator performs fitting on a calculation model, which includes a heat input amount from the plasma as a parameter, for calculating the power supplied in the transient state by using the power supplied in the unignited state and the transient state and measured by the measurement part, and calculates the heat input amount. An output part configured to output information based on the heat input amount calculated by the parameter calculator
Abstract:
A placing table on an embodiment includes a supporting member and a base. The supporting member includes a placing region provided with a heater, and an outer peripheral region surrounding the placing region. The base includes a first region supporting the placing region thereon, and a second region surrounding the first region. In the second region, through holes are formed. Wirings electrically connected to the heater passes through the through holes of the second region.
Abstract:
The present disclosure relates to a placing unit including: a base to which a high-frequency power is applied; an electrostatic chuck provided on the base and including a placing region configured to place a workpiece and an outer peripheral region configured to surround the placing region; a heater provided in the placing region; a wiring layer connected to the heater and extending to an inside of the outer peripheral region; a power supply terminal connected to a contact portion of the wiring layer in the outer peripheral region; and a conductive layer formed in the outer peripheral region or in other regions along a thickness direction of the outer peripheral region so as to overlap with the power supply terminal when viewed from thickness direction of the outer peripheral region.
Abstract:
A processing system includes a thermo viewer 51 which measures a temperature distribution over a top surface of a semiconductor wafer; a temperature measuring device 14 which measures, for each of divided areas of the semiconductor wafer, a temperature of a portion in the divided area; a median value calculating unit 202 which calculates, for each divided area, a median value of a temperature distribution of the divided area, based on the temperature distribution measured by the thermo viewer 51; an offset calculating unit 204 which calculates, for each divided area, a difference between the median value and the temperature of the portion as an offset; and a temperature control unit 205 which controls, for each divided area, the temperature of the divided area such that the median value becomes equal to a set temperature, based on the offset and the temperature measured by the temperature measuring device 14.
Abstract:
A substrate support for use in a reaction chamber includes a base, and an in-situ electrostatic chuck. The chuck includes a first electrode in an upper portion of the chuck that is configured to hold a wafer to an upper surface of the upper portion by a first electrostatic attractive force under a condition of a first voltage is applied to the first electrode, and a second electrode that opposes an upper surface of the base and is configured to hold the chuck to the base by a second electrostatic attractive force under a condition that a second voltage is applied to the second electrode. Under a condition that the second voltage is not supplied to the second electrode, the second electrostatic attractive force is not present and the chuck is freed to be replaced in-situ without also removing the base and without exposing the reaction chamber to external atmosphere.
Abstract:
A plasma processing apparatus includes an external circuit electrically connected through a line to an electrical component in a processing chamber and a filter provided on the line to attenuate or block noise introduced into the line from the electrical component toward the external circuit. The filter includes a coil having constant diameter and coil length; a tubular outer conductor accommodating the coil and forming a distributed constant line in which parallel resonance occurs at multiple frequencies in combination with the coil; and a movable member for changing each winding gap of the coil and provided in an effective section where a specific one or a plurality of parallel resonance frequencies is shifted to a higher frequency side or a lower frequency side in frequency-impedance characteristics of the filter by changing the winding gap of the coil in the effective section in a longitudinal direction of the coil.
Abstract:
A placement table includes: a base; an electrostatic chuck disposed on the base and including a placement surface on which a workpiece is placed; a plurality of heat generating members disposed at a side opposite to the placement surface of the electrostatic chuck; a power supply configured to generate a current for causing each of the plurality of heat generating members to generate heat; a plurality of electric wires installed to extend in a direction crossing the placement surface from the plurality of heat generating members, respectively, and configured to connect the power supply with the heat generating members, respectively; and a filter mounted on each of the plurality of electric wires to remove a high frequency component having a frequency higher than that of the current generated by the power supply.
Abstract:
A transfer device for simultaneously or separately transferring a wafer and a consumable part having a circular shape is disclosed. The consumable part is disposed in a wafer processing module, and the outer diameter of the consumable part is larger than the outer diameter of the wafer. The transfer device comprises an end effector configured to place the wafer and the consumable part thereon simultaneously or separately, an arm configured to move the end effector, and a controller configured to control the arm, to place the consumable part on the end effector such that the center of gravity of the consumable part coincides with a first position when transferring the consumable part, and to place the wafer on the end effector such that the center of gravity of the wafer coincides with a second position between the first position and front ends of the end effector when transferring the wafer.
Abstract:
A plasma processing apparatus includes an external circuit electrically connected through a line to an electrical component in a processing chamber and a filter provided on the line to attenuate or block noise introduced into the line from the electrical component toward the external circuit. The filter includes a coil having constant diameter and coil length; a tubular outer conductor accommodating the coil and forming a distributed constant line in which parallel resonance occurs at multiple frequencies in combination with the coil; and a movable member for changing each winding gap of the coil and provided in an effective section where a specific one or a plurality of parallel resonance frequencies is shifted to a higher frequency side or a lower frequency side in frequency-impedance characteristics of the filter by changing the winding gap of the coil in the effective section in a longitudinal direction of the coil.
Abstract:
A substrate processing system allows selective replacement of one or both of two rings included in an edge ring. The substrate processing system includes a process module, a transfer robot, and a replacing module. In the process module, an edge ring is lifted from a substrate support by at least one lifter. The edge ring includes a first ring and a second ring. The edge ring is transferred between the process module and the replacing module by the transfer robot. In the replacing module, at least one of the first ring or the second ring included in the edge ring is replaced with a replacement part to prepare a replacement edge ring. The replacement edge ring is transferred between the replacing module and the process module by the transfer robot.