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    Uper Layer Film Forming Composition for Liquid Immersion and Method of Forming Photoresist Pattern
    2.
    发明申请
    Uper Layer Film Forming Composition for Liquid Immersion and Method of Forming Photoresist Pattern 有权
    用于液体浸渍的Uper层成膜组合物和形成光刻胶图案的方法

    公开(公告)号：US20070269734A1

    公开(公告)日：2007-11-22

    申请号：US10586187

    申请日：2005-01-14

    申请人： Toru Kimura ,  Yukio Nishimura ,  Tomohiro Utaka ,  Hiroaki Nemoto ,  Atsushi Nakamura ,  Takashi Chiba ,  Hiroki Nakagawa

    发明人： Toru Kimura ,  Yukio Nishimura ,  Tomohiro Utaka ,  Hiroaki Nemoto ,  Atsushi Nakamura ,  Takashi Chiba ,  Hiroki Nakagawa

    IPC分类号： G03F7/20 ,  G03F7/11 ,  H01L21/027

    CPC分类号： G03F7/2041 ,  C08F214/182 ,  C08F214/186 ,  C08F216/10 ,  C08F220/18 ,  C08F220/24 ,  G03F7/11 ,  C08F220/06 ,  C08F2222/1013

    摘要： An immersion upper layer film composition is provided which exhibits sufficient transparency for the exposure wavelength 248 nm(KrF) and 193 nm(ArF), can form a protective film on the photoresist film without being intermixed with the photoresist film, is not eluted into water used during immersion exposure to maintain a stable film, and can be easily dissolved in an alkaline developer. The composition applied to coat on the photoresist film when using an immersion exposure device which is irradiated through water provided between a lens and the photoresist film, the composition comprises a resin forming a water-stable film during irradiation and being dissolved in a subsequent developer, and a solvent containing a monovalent alcohol having 6 or less carbon atoms, and the resin contains a resin component having an alcoholic hydroxyl group on the side chain containing a fluoroalkyl group on at least the carbon atom of α-position.

    摘要翻译： 提供了对于曝光波长248nm（KrF）和193nm（ArF）显示足够的透明度的浸没上层膜组合物，可以在光致抗蚀剂膜上形成保护膜而不与光致抗蚀剂膜混合，不会被洗脱到水中 在浸渍曝光期间使用以保持稳定的膜，并且可以容易地溶解在碱性显影剂中。 当使用通过设置在透镜和光致抗蚀剂膜之间的水照射的浸没曝光装置时，该组合物涂覆在光致抗蚀剂膜上，该组合物包含在照射期间形成水稳定膜并溶解在随后的显影剂中的树脂， 和含有6个以下碳原子的一元醇的溶剂，该树脂含有至少在α-位的碳原子上在侧链上含有氟烷基的具有醇羟基的树脂成分。

    Upper layer film forming composition for liquid immersion and method of forming photoresist pattern
    3.
    发明授权
    Upper layer film forming composition for liquid immersion and method of forming photoresist pattern 有权
    用于液浸的上层成膜组合物和形成光致抗蚀剂图案的方法

    公开(公告)号：US08247165B2

    公开(公告)日：2012-08-21

    申请号：US10586187

    申请日：2005-01-14

    申请人： Toru Kimura ,  Yukio Nishimura ,  Tomohiro Utaka ,  Hiroaki Nemoto ,  Atsushi Nakamura ,  Takashi Chiba ,  Hiroki Nakagawa

    发明人： Toru Kimura ,  Yukio Nishimura ,  Tomohiro Utaka ,  Hiroaki Nemoto ,  Atsushi Nakamura ,  Takashi Chiba ,  Hiroki Nakagawa

    IPC分类号： G03C1/00 ,  G03F7/00 ,  C08F18/20

    CPC分类号： G03F7/2041 ,  C08F214/182 ,  C08F214/186 ,  C08F216/10 ,  C08F220/18 ,  C08F220/24 ,  G03F7/11 ,  C08F220/06 ,  C08F2222/1013

    摘要： An immersion upper layer film composition is provided which exhibits sufficient transparency for the exposure wavelength 248 nm(KrF) and 193 nm(ArF), can form a protective film on the photoresist film without being intermixed with the photoresist film, is not eluted into water used during immersion exposure to maintain a stable film, and can be easily dissolved in an alkaline developer. The composition applied to coat on the photoresist film when using an immersion exposure device which is irradiated through water provided between a lens and the photoresist film, the composition comprises a resin forming a water-stable film during irradiation and being dissolved in a subsequent developer, and a solvent containing a monovalent alcohol having 6 or less carbon atoms, and the resin contains a resin component having an alcoholic hydroxyl group on the side chain containing a fluoroalkyl group on at least the carbon atom of α-position.

    摘要翻译： 提供了对于曝光波长248nm（KrF）和193nm（ArF）显示足够的透明度的浸没上层膜组合物，可以在光致抗蚀剂膜上形成保护膜而不与光致抗蚀剂膜混合，不会被洗脱到水中 在浸渍曝光期间使用以保持稳定的膜，并且可以容易地溶解在碱性显影剂中。 当使用通过设置在透镜和光致抗蚀剂膜之间的水照射的浸没曝光装置时，该组合物涂覆在光致抗蚀剂膜上，该组合物包含在照射期间形成水稳定膜并溶解在随后的显影剂中的树脂， 和含有6个以下碳原子的一元醇的溶剂，该树脂含有至少在α-位的碳原子上的侧链上含有氟烷基的具有醇羟基的树脂成分。

    Lactone copolymer and radiation-sensitive resin composition
    4.
    发明申请
    Lactone copolymer and radiation-sensitive resin composition 有权
    内酯共聚物和辐射敏感树脂组合物

    公开(公告)号：US20090053649A1

    公开(公告)日：2009-02-26

    申请号：US11579646

    申请日：2005-05-02

    申请人： Hiromitsu Nakashima ,  Tomohiro Utaka ,  Takashi Chiba ,  Eiji Yoneda ,  Atsushi Nakamura

    发明人： Hiromitsu Nakashima ,  Tomohiro Utaka ,  Takashi Chiba ,  Eiji Yoneda ,  Atsushi Nakamura

    IPC分类号： G03F7/004 ,  C08F24/00

    CPC分类号： C08F220/28 ,  C08F220/18 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397

    摘要： A radiation-sensitive resin composition excelling in basic properties as a resist such as sensitivity, resolution, and the like, having a wide depth of focus (DOF) to both a line-and-space pattern and an isolated space pattern, and exhibiting a minimal line width change due to fluctuation of a bake temperature, and having a small line width limit in which the line pattern destroying phenomenon does not occur, and a lactone-containing copolymer useful as a resin component of the composition are provided.The lactone-containing copolymer is represented by a copolymer of the following compounds (1-1), (2-1), and (3-1). The radiation-sensitive resin composition comprises (a) the lactone-containing copolymer and (b) a photoacid generator.

    摘要翻译： 作为具有对于线间距图案和隔离空间图案的宽焦点（DOF）的宽灵敏度，分辨率等的抗蚀剂的基本性能优异的辐射敏感性树脂组合物， 由于烘烤温度的波动引起的线宽变化最小，并且具有不发生线型破坏现象的小线宽限制，并且提供可用作该组合物的树脂成分的含内酯共聚物。 含有内酯的共聚物由以下化合物（1-1），（2-1）和（3-1）的共聚物表示。 辐射敏感性树脂组合物包含（a）含内酯共聚物和（b）光酸产生剂。

    Upper layer-forming composition and photoresist patterning method
    7.
    发明授权
    Upper layer-forming composition and photoresist patterning method 有权
    上层形成组合物和光致抗蚀剂图案化方法

    公开(公告)号：US08076053B2

    公开(公告)日：2011-12-13

    申请号：US12091712

    申请日：2006-10-25

    申请人： Atsushi Nakamura ,  Hiroki Nakagawa ,  Hiromitsu Nakashima ,  Takayuki Tsuji ,  Hiroshi Dougauchi ,  Daita Kouno ,  Yukio Nishimura

    发明人： Atsushi Nakamura ,  Hiroki Nakagawa ,  Hiromitsu Nakashima ,  Takayuki Tsuji ,  Hiroshi Dougauchi ,  Daita Kouno ,  Yukio Nishimura

    IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/40 ,  G03F7/11

    CPC分类号： G03F7/11 ,  C08F220/18 ,  C08F220/30 ,  G03F7/0046 ,  G03F7/2041

    摘要： An upper layer-forming composition formed on a photoresist while causing almost no intermixing with the photoresist film and a photoresist patterning method are provided. The upper layer-forming composition is stably maintained without being eluted in a medium such as water during liquid immersion lithography and is easily dissolved in an alkaline developer. The upper layer-forming composition covers a photoresist film for forming a pattern by exposure to radiation. The composition comprises a resin dissolvable in a developer for the photoresist film and a solvent in which the resin is dissolved. The solvent has a viscosity of less than 5.2×10−3 Pa·s at 20° C. In addition, the solvent does not cause intermixing of the photoresist film and the upper layer-forming composition. The solvent contains an ether or a hydrocarbon.

    摘要翻译： 提供了形成在光致抗蚀剂上的上层形成组合物，同时几乎不与光致抗蚀剂膜混合，并且提供光致抗蚀剂图案化方法。 上层形成组合物在液浸光刻期间稳定地保持在介质如水中不被洗脱，并容易溶解在碱性显影剂中。 上层形成组合物覆盖用于通过暴露于辐射形成图案的光致抗蚀剂膜。 该组合物包含可溶于光致抗蚀剂膜的显影剂中的树脂和溶解有树脂的溶剂。 溶剂在20℃下的粘度小于5.2×10-3Pa·s。此外，溶剂不会引起光致抗蚀剂膜和上层形成组合物的混合。 溶剂含有醚或烃。

    POSITIVE-WORKING RADIATION-SENSITIVE COMPOSITION AND METHOD FOR RESIST PATTERN FORMATION USING THE COMPOSITION
    8.
    发明申请
    POSITIVE-WORKING RADIATION-SENSITIVE COMPOSITION AND METHOD FOR RESIST PATTERN FORMATION USING THE COMPOSITION 审中-公开
    积极工作的辐射敏感性组合物和使用组合物形成抗蚀剂图案的方法

    公开(公告)号：US20100068650A1

    公开(公告)日：2010-03-18

    申请号：US12529341

    申请日：2008-03-17

    申请人： Yukio Nishimura ,  Kaori Sakai ,  Nobuji Matsumura ,  Makoto Sugiura ,  Atsushi Nakamura ,  Gouji Wakamatsu ,  Yuusuke Anno

    发明人： Yukio Nishimura ,  Kaori Sakai ,  Nobuji Matsumura ,  Makoto Sugiura ,  Atsushi Nakamura ,  Gouji Wakamatsu ,  Yuusuke Anno

    IPC分类号： G03F7/039 ,  G03F7/40

    CPC分类号： G03F7/0035 ,  G03F7/0397 ,  G03F7/2024 ,  G03F7/2041 ,  G03F7/40

    摘要： A method of patterning using double exposure patterning in a liquid immersion lithographic process is provided. The patterning method comprises a step of forming a first pattern on a substrate using a first resist layer forming composition, a step of making the first pattern inactive, a step of forming a second pattern on a substrate on which a pattern has been formed using a second resist layer forming composition and exposing the second resist layer to radiation, and a step of developing the exposed resist layer to form a second pattern in the space area of the first pattern. The first resist layer forming composition contains a cross-linking agent which accelerates conversion of the first layer from positive-working to negative-working.

    摘要翻译： 提供了一种在液浸光刻工艺中使用双曝光图案化的图案化方法。 图案化方法包括使用第一抗蚀剂层形成组合物在基板上形成第一图案的步骤，使第一图案无效的步骤，在其上已经形成图案的基板上形成第二图案的步骤，使用 第二抗蚀剂层形成组合物并将第二抗蚀剂层暴露于辐射，以及在第一图案的空间区域中显影曝光的抗蚀剂层以形成第二图案的步骤。 第一抗蚀剂层形成组合物含有交联剂，其加速第一层从正性转变为负性转化。

    UPPER LAYER-FORMING COMPOSITION AND PHOTORESIST PATTERNING METHOD
    9.
    发明申请
    UPPER LAYER-FORMING COMPOSITION AND PHOTORESIST PATTERNING METHOD 有权
    上层成型和光电子图案方法

    公开(公告)号：US20100003615A1

    公开(公告)日：2010-01-07

    申请号：US12091712

    申请日：2006-10-25

    申请人： Atsushi Nakamura ,  Hiroki Makagawa ,  Hiromitsu Nakashima ,  Takayuki Tsuji ,  Hiroshi Dougauchi ,  Daita Kouno ,  Yukio Nishimura

    发明人： Atsushi Nakamura ,  Hiroki Makagawa ,  Hiromitsu Nakashima ,  Takayuki Tsuji ,  Hiroshi Dougauchi ,  Daita Kouno ,  Yukio Nishimura

    IPC分类号： G03F7/20 ,  G03F7/004

    CPC分类号： G03F7/11 ,  C08F220/18 ,  C08F220/30 ,  G03F7/0046 ,  G03F7/2041

    摘要： An upper layer-forming composition formed on a photoresist while causing almost no intermixing with the photoresist film and a photoresist patterning method are provided. The upper layer-forming composition is stably maintained without being eluted in a medium such as water during liquid immersion lithography and is easily dissolved in an alkaline developer. The upper layer-forming composition covers a photoresist film for forming a pattern by exposure to radiation. The composition comprises a resin dissolvable in a developer for the photoresist film and a solvent in which the resin is dissolved. The solvent has a viscosity of less than 5.2×10−3 Pa·s at 20° C. In addition, the solvent does not cause intermixing of the photoresist film and the upper layer-forming composition. The solvent contains an ether or a hydrocarbon.

    摘要翻译： 提供了形成在光致抗蚀剂上的上层形成组合物，同时几乎不与光致抗蚀剂膜混合，并且提供光致抗蚀剂图案化方法。 上层形成组合物在液浸光刻期间稳定地保持在介质如水中不被洗脱，并容易溶解在碱性显影剂中。 上层形成组合物覆盖用于通过暴露于辐射形成图案的光致抗蚀剂膜。 该组合物包含可溶于光致抗蚀剂膜的显影剂中的树脂和溶解有树脂的溶剂。 溶剂在20℃时的粘度小于5.2×10 -3 Pa.s。此外，溶剂不会引起光致抗蚀剂膜和上层形成组合物的混合。 溶剂含有醚或烃。