Method for the manufacture of electromagnetic radiation reflecting devices
    1.
    发明授权
    Method for the manufacture of electromagnetic radiation reflecting devices 有权
    制造电磁辐射反射装置的方法

    公开(公告)号:US06759132B2

    公开(公告)日:2004-07-06

    申请号:US10295767

    申请日:2002-11-14

    IPC分类号: B32B900

    摘要: Method for manufacturing electromagnetic radiation reflecting devices, said method comprising the steps of: a) providing a silicon substrate defined by at least one first free surface, b) forming on said first surface a layer of protective material provided with an opening which exposes a region of the first free surface, and c)etching the region of the free surface by means of an anisotropic agent to remove at least one portion of the substrate and define a second free surface of the substrate inclined in relation to said first surface. Furthermore, said first free surface is parallel to the crystalline planes {110} of silicon substrate and said step (c) comprises a progressing step of the anisotropic agent such that the second free surface resulting from the etching step is parallel to the planes {100} of said substrate.

    摘要翻译: 用于制造电磁辐射反射装置的方法,所述方法包括以下步骤:a)提供由至少一个第一自由表面限定的硅衬底,b)在所述第一表面上形成一层保护材料,所述保护材料层具有暴露区域 的第一自由表面,以及c)借助于各向异性剂蚀刻所述自由表面的区域以去除所述衬底的至少一部分并且限定所述衬底相对于所述第一表面倾斜的第二自由表面。 此外,所述第一自由表面平行于硅衬底的晶面{110},并且所述步骤(c)包括各向异性剂的进行步骤,使得由蚀刻步骤产生的第二自由表面平行于平面{100 }。

    Inexpensive method of manufacturing an SOI wafer
    7.
    发明授权
    Inexpensive method of manufacturing an SOI wafer 有权
    制造SOI晶片的廉价方法

    公开(公告)号:US06350657B1

    公开(公告)日:2002-02-26

    申请号:US09359870

    申请日:1999-07-26

    IPC分类号: H01L21311

    摘要: A method of manufacturing an SOI (silicon on insulator) wafer includes the step of selective anisotropic etching to form, in the substrate, trenches which extend to a predetermined depth from a major surface of the substrate and between which pillar portions of the substrate are defined. The method further includes the step of selective isotropic etching to enlarge the trenches, starting at a predetermined distance from the major surface, thus reducing the thicknesses of the pillar portions of the substrate between adjacent trenches. Also, the method includes the steps of selective oxidation to convert the pillar portions of reduced thickness of the substrate into silicon dioxide and to fill the trenches with silicon dioxide, starting substantially from the predetermined distance, and epitaxial growth of a silicon layer on the major surface of the substrate. The method permits more freedom in the selection of the dimensional ratios between the trenches and the pillars and thus enables the necessary crystallographic quality of the epitaxial layer to be achieved, ensuring a continuous buried oxide layer.

    摘要翻译: 制造SOI(绝缘体上硅)晶片的方法包括选择性各向异性蚀刻的步骤,以在衬底中形成从衬底的主表面延伸到预定深度并且在衬底的哪个柱部分被限定的沟槽之间 。 该方法还包括选择性各向同性蚀刻步骤,以从主表面预定距离开始扩大沟槽,从而减小相邻沟槽之间的衬底的柱部分的厚度。 此外,该方法包括以下步骤:选择性氧化以将衬底的厚度的柱部分转换为二氧化硅,并且以基本上从预定距离开始的二氧化硅填充沟槽,以及主层上的硅层的外延生长 基板的表面。 该方法允许在选择沟槽和柱之间的尺寸比例时更多的自由度,并且因此能够实现外延层的必要的晶体学质量,确保连续的掩埋氧化物层。

    Integrated chemical microreactor with separated channels
    8.
    发明申请
    Integrated chemical microreactor with separated channels 有权
    具有分离通道的集成化学微反应器

    公开(公告)号:US20050142597A1

    公开(公告)日:2005-06-30

    申请号:US10997235

    申请日:2004-11-24

    摘要: The microreactor is formed by a sandwich including a first body, an intermediate sealing layer and a second body. A buried channel extends in the first body and communicates with the surface of the first body through a first and a second apertures. A first and a second reservoirs are formed in the second body and are at least partially aligned with the first and second apertures. The sealing layer separates the first aperture from the first reservoir and the second aperture from the second reservoir, thereby avoiding contamination of liquids contained in the buried channel from the outside and from any adjacent buried channels. The sealing layer is perforated during use of the device, but a resilient plug can be used to reseal the device.

    摘要翻译: 微反应器由包括第一主体,中间密封层和第二主体的夹层形成。 掩埋通道在第一主体中延伸并且通过第一和第二孔与第一主体的表面连通。 第一和第二储存器形成在第二主体中并且至少部分地与第一和第二孔对准。 密封层将第一孔与第一储存器和第二孔分隔开来自第二储存器,从而避免了从外部和任何相邻的埋入通道污染包含在掩埋通道中的液体。 在使用该装置期间密封层是穿孔的,但是可以使用弹性塞来重新密封装置。

    Integrated semiconductor microreactor for real-time monitoring of biological reactions
    10.
    发明授权
    Integrated semiconductor microreactor for real-time monitoring of biological reactions 有权
    集成半导体微反应器,用于实时监测生物反应

    公开(公告)号:US07906321B2

    公开(公告)日:2011-03-15

    申请号:US11009171

    申请日:2004-12-10

    IPC分类号: C12M1/34 C12M3/00

    摘要: An integrated semiconductor chemical microreactor for real-time polymerase chain reaction (PCR) monitoring, has a monolithic body of semiconductor material; a number of buried channels formed in the monolithic body; an inlet trench and an outlet trench for each buried channel; and a monitoring trench for each buried channel, extending between the inlet and outlet trenches thereof from the top surface of the monolithic body to the respective buried channel. Real-time PCR monitoring is carried out by channeling light beams into the buried channels, possibly through one of the inlet or outlet trenches, whereby the light beams impinge on the fluid therein and collecting the emergent light coming out from the monitoring trench.

    摘要翻译: 一种用于实时聚合酶链反应(PCR)监测的集成半导体化学微反应器,具有半导体材料的整体; 形成在整体式主体中的多个埋入通道; 每个掩埋通道的入口沟槽和出口沟槽; 以及用于每个掩埋通道的监测沟槽,其在其入口和出口沟槽之间从单体主体的顶表面延伸到相应的掩埋通道。 通过将光束通过入口或出口沟槽中的一个引入到掩埋通道中,从而使光束照射在其中的流体并收集从监测沟槽出来的出射光,从而进行实时PCR监测。