摘要:
Heat transfer systems are presented with improved heat dissipation schemes based upon an asymmetric arrangement of Peltier elements to form a hot side of greater area than the cold side. This permits greater heat dissipation at the hot side of the heat transfer device into a suitable heat sink. A substantially planar system of radial symmetry is the basis of a highly efficient heat spreading scheme. The ‘spokes’ of the system are pie-wedge shaped Peltier semiconductor elements having a small heat transfer junction at one end and large heat transfer junction at the other. In best versions, a concentric ring scheme has a cooled area at the center and a heat dump at the periphery. Semiconductor Peltier elements connect the two and provide a vehicle to carry heat radially away from a heat point source thermally coupled to the heat transfer system at an active area. These special arrangements are provided while still maintaining the necessary serial electronic circuit and parallel thermal circuit.
摘要:
Light emitting diode systems disclosed include semiconductor diodes arranged in cooperation with electrical contacts, mounting provisions, and optical couplings; where the optical couplings include at least a Fresnel lens. A Fresnel lens is further coupled to additional optical elements such as a concave or ‘negative’ lens and still further to a reflector operating via principles of total internal reflection. Both the concave lens and the reflector are aspherical in preferred versions. A cover element of single piece plastic may be formed in a molding process whereby all three of these optical elements, i.e. the Fresnel lens, the negative lens and the reflector, are formed into the single plastic piece. Further, the plastic piece may be arranged to also accommodate auxiliary systems such as alignment indexing and fastening means as well as interlocking peripheral configurations.
摘要:
New Peltier semiconductor heat transfer systems are presented herein. In particular, Peltier heat transfer systems of Peltier semiconductor elements of highly unique shape are arranged to bias the cooling side with respect to its size and consequently performance. In effect, a Peltier heat transfer system is created whereby the Peltier called side is greatly reduced in size and the Peltier hot side is greatly expanded in size. Such ‘high aspect ratio’ Peltier systems promote ‘focused’ cooling effect, which is particularly useful in conjunction with high-performance electronic devices having a small footprint. The entire cooling a fact of the Peltier device is brought to the small space approximated by a point. Thus a ‘point’ heat source such as a semiconductor laser are high-performance light emitting diode is more effectively cooled by these systems.
摘要:
New high-performance, highly tunable photophosphors are presented. These photophosphor's pump spectra and emission spectra are both manipulated via variances in the formulation of compounds taught herein. In addition, new combinations of semiconductor devices in conjunction with these optically active materials are described. In particular, light emitting semiconductors fashioned as diodes from indium gallium nitride construction are combined with these photophosphors. High-energy short wavelength light mixes with the longer wavelengths light emitted by the halogen-silicate photophosphor to produce a broad spectrum perceived by human observers as “white light”.
摘要:
Light emitting diodes are prepared with specialized packages which provide a dosing feature with respect to a phosphor wavelength converting medium. Elements of the device package form a specially shaped cavity when coupled together. The shape and size of the cavity operates to control the dosing of phosphor spiked medium of soft gel. The gel fills the cavity such that light emitted from a semiconductor die is exposed to a similar cross section independent of the exact direction of light propagation. In this way, ‘white’ LED systems are formed from blue emitting diodes as highly controlled phosphor dosing permits precise amounts of blue light to be converted to yellow light without problems with angular uniformity observed in competing technologies.
摘要:
New combinations of semiconductor devices in conjunction with optically active materials are set forth herein. In particular, light emitting semiconductors fashioned as diodes from indium gallium nitride construction are combined with high-performance optically active Langasite La3Ga5SiO14 crystalline materials. When Langasite is properly doped, it will respond to the light output emissions of the diode by absorbing high energy photons therefrom and reemitting light of longer wavelengths. High-energy short wavelength light mixes with the longer wavelengths light to produce a broad spectrum which may be perceived by human observers as white light. Langasite, a relatively new material, enjoying great utility in frequency control and stabilization schemes has heretofore never been used in combination with optical emission systems.
摘要翻译:本文阐述了与光学活性材料结合的半导体器件的新组合。 特别地,由氮化铟镓构造的二极管形成的发光半导体与高性能的光学活性的Langasite La 3 Ga 5 SiO 14 N 14 结晶材料。 当Langasite被正确掺杂时,它将通过从其吸收高能量光子并重新发射更长波长的光来响应二极管的光输出发射。 高能短波长光与较长波长的光混合以产生广谱,人类观察者可以将其视为白光。 朗兴石是一种相对较新的材料,在频率控制和稳定方案中享有很高的实用性,迄今从未与光发射系统结合使用。
摘要:
Special high performance wavelength shifting compositions has been discovered and devised. Further, these compositions when properly distributed in a bulk medium having cooperative properties forms new media having totally unique and useful characteristics. In particular, a special phosphor is devised having a dual peak spectral output when stimulated with high energy photonic input. A dual activator formula is created such that simple manipulation of specified ratios permits flexibility in tuning of color temperature output of the phosphor emitter combination. When prepared with preferred particle sizes and densities, performance improvements are observed. Finally, these phosphors are combined with other special binder materials to form colloid media with well designed optical interaction cross section whereby light emitted from a high intensity blue diode semiconductor will experience just enough wavelength shift in precisely the desired portions of the spectrum, with high efficiency, to form a white LED not found in other systems.