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1.发明授权Method for fabricating a semiconductor device in a magnetron sputtering system 失效在磁控溅射系统中制造半导体器件的方法公开(公告)号：US06361662B1
公开(公告)日：2002-03-26
申请号：US08996321
申请日：1997-12-22
申请人： Yasuhiro Chiba , Keiichi Maeda , Mitsuru Taguchi
发明人： Yasuhiro Chiba , Keiichi Maeda , Mitsuru Taguchi
IPC分类号： C23C1434
CPC分类号： H01L29/665 , C23C14/165 , C23C14/35 , H01J37/3405 , H01J37/3426 , H01L21/28052 , H01L21/28518 , H01L21/2855
摘要： Disclosed is a magnetron sputtering system enabling formation of a film of a ferroelectric substance by suppressing occurrence of a magnetic field due to an eddy current. The magnetron sputtering system includes a flat target; magnetic field applying means (magnets), provided in the vicinity of a back surface of the target, for applying a magnetic field to a front surface of the target; and magnetic field rotating means (motor) for rotating the magnetic field applying means so as to rotate the magnetic field applied to the front surface of the target. The magnetic field rotating means is provided with rotational speed varying means (speed controller) for varying the rotational speed of the magnetic field applied by the magnetic field rotating means.
摘要翻译： 公开了一种磁控管溅射系统，其能够通过抑制由涡流引起的磁场的产生而形成铁电体的膜。 磁控溅射系统包括平板靶; 设置在所述靶的背面附近的磁场施加装置（磁体），用于向所述目标的前表面施加磁场; 以及用于旋转磁场施加装置的磁场旋转装置（马达），以便旋转施加到目标的前表面的磁场。 磁场旋转装置设置有用于改变由磁场旋转装置施加的磁场的转速的转速改变装置（速度控制器）。
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公开(公告)号：US6051490A
公开(公告)日：2000-04-18
申请号：US976314
申请日：1997-11-21
申请人： Mitsuru Taguchi , Keiichi Maeda
发明人： Mitsuru Taguchi , Keiichi Maeda
IPC分类号： H01L21/768 , H01L23/485 , H01L23/532 , H01L21/4763
CPC分类号： H01L21/76831 , H01L21/76802 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76858 , H01L21/76867 , H01L21/76877 , H01L23/485 , H01L23/53223 , H01L2924/0002
摘要： A method of forming wirings which includes forming a film of a silicon-containing metal layer at a high temperature on an underlying metal, thereby forming a silicon alloy layer which includes the underlying metal and the silicon-containing metal during film formation. In a case of forming wirings by a silicon-containing metal layer, occurrence of Si nodules can be eliminated to obtain wirings of high reliability.
摘要翻译： 一种形成布线的方法，其包括在下面的金属上形成高温下的含硅金属层的膜，从而在成膜期间形成包括下面的金属和含硅金属的硅合金层。 在通过含硅金属层形成布线的情况下，可以消除Si结节的发生，从而获得高可靠性的布线。
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公开(公告)号：US06268290B1
公开(公告)日：2001-07-31
申请号：US08250332
申请日：1994-05-27
申请人： Mitsuru Taguchi , Keiichi Maeda
发明人： Mitsuru Taguchi , Keiichi Maeda
IPC分类号： H01L2144
CPC分类号： H01L21/76802 , H01L21/76831 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76858 , H01L21/76877 , H01L23/53219 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： A method of forming wirings which comprises forming a film of a silicon-containing metal layer at a high temperature on an underlying metals, thereby forming a silicon alloy layer comprising the underlying metal and the silicon-containing metal during film formation. In a case of forming wirings by a silicon-containing metal layer occurrence of Si nodules can be eliminated to obtain wirings of high reliability.
摘要翻译： 一种形成布线的方法，其包括在下面的金属上形成高温下的含硅金属层的膜，从而在成膜期间形成包含下面的金属和含硅金属的硅合金层。 在通过含硅金属层形成布线的情况下，可以消除Si结节的发生，从而获得高可靠性的布线。
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4.发明授权Multilayer interconnect structure for semiconductor device and method of manufacturing same 失效用于半导体器件的多层互连结构及其制造方法
公开(公告)号：US5719446A
公开(公告)日：1998-02-17
申请号：US797925
申请日：1997-02-12
IPC分类号： H01L21/203 , H01L21/205 , H01L21/3205 , H01L21/324 , H01L21/768 , H01L23/12 , H01L23/52 , H01L23/522 , H01L23/532 , H01L29/41
CPC分类号： H01L23/5226 , H01L23/53223 , H01L2924/0002 , Y10S257/915
摘要： A multilayer interconnect structure for a semiconductor device. The structure comprises a lower patterned metallization layer, a higher patterned metallization layer, and filled holes for electrically interconnecting these two layers. The two metallization layers are formed out of aluminum or an aluminum alloy by high-temperature aluminum sputtering or aluminum reflow techniques. A suction-preventing layer is formed either at the bottoms of the contact holes or on the surface of the lower metallization layer to prevent the material of the lower metallization layer from being sucked into the overlying contact holes.
摘要翻译： 一种用于半导体器件的多层互连结构。 该结构包括下图案化的金属化层，较高图案化的金属化层和用于电连接这两层的填充孔。 两个金属化层由铝或铝合金通过高温铝溅射或铝回流技术形成。 在接触孔的底部或下部金属化层的表面上形成防吸水层，以防止下部金属化层的材料被吸入上覆的接触孔中。
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公开(公告)号：US5776830A
公开(公告)日：1998-07-07
申请号：US947704
申请日：1997-10-09
申请人： Hirofumi Sumi , Keiichi Maeda , Yukiyasu Sugano , Kazuhide Koyama , Mitsuru Taguchi , Kazuhiro Hoshino
发明人： Hirofumi Sumi , Keiichi Maeda , Yukiyasu Sugano , Kazuhide Koyama , Mitsuru Taguchi , Kazuhiro Hoshino
IPC分类号： H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L21/283
CPC分类号： H01L21/28518 , H01L21/76843 , H01L21/76855 , H01L21/76856
摘要： The present invention provides a process for fabricating a connection structure comprising a anti-reaction layer having excellent barrier properties and having improved ohmic characteristics with respect to the semiconductor substrate. Accordingly, the present invention comprises forming a first anti-reaction layer by temporarily ceasing the film deposition, and then initiating the film deposition again to form a second anti-reaction layer on the surface of the previously deposited first anti-reaction layer. A heat treatment can be applied to the structure after depositing a anti-reaction layer.
摘要翻译： 本发明提供一种制造连接结构的方法，该连接结构包括具有优异的阻挡性能并具有相对于半导体衬底的改善的欧姆特性的抗反应层。 因此，本发明包括通过暂时停止膜沉积来形成第一抗反应层，然后再次引发膜沉积，以在先前沉积的第一抗反应层的表面上形成第二抗反应层。 沉积抗反应层后可以对结构进行热处理。
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6.发明申请SOLID-STATE IMAGING DEVICE, SEMICONDUCTOR DEVICE, MANUFACTURING METHODS THEREOF, AND ELECTRONIC APPARATUS 有权固体成像装置，半导体器件及其制造方法和电子装置公开(公告)号：US20120105696A1
公开(公告)日：2012-05-03
申请号：US13276860
申请日：2011-10-19
申请人： Keiichi Maeda
发明人： Keiichi Maeda
IPC分类号： H04N5/335 , H01L21/50 , H01L31/18 , H01L27/146 , H01L23/52
CPC分类号： H01L27/1469 , H01L21/76898 , H01L23/481 , H01L23/552 , H01L25/0657 , H01L27/14621 , H01L27/14627 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L2225/06513 , H01L2225/06541 , H01L2924/0002 , H01L2924/00
摘要： A solid-state imaging device includes an imaging element and a logic element. The imaging element includes a first semiconductor substrate, a first wiring layer, and a first metal layer, in which a pixel region which is a light sensing surface is formed. The logic element includes a second semiconductor substrate, a second wiring layer, and a second metal layer, in which a signal processing circuit that processes a pixel signal obtained at the pixel region is formed. The logic element is laminated to the imaging element so that the first metal layer and the second metal layer are bonded to each other, and the first metal layer and the second metal layer are formed on a region excluding a region in which a penetrating electrode layer penetrating a bonding surface of the imaging element and the logic element is formed.
摘要翻译： 固态成像装置包括成像元件和逻辑元件。 成像元件包括其中形成有作为感光表面的像素区域的第一半导体衬底，第一布线层和第一金属层。 逻辑元件包括第二半导体衬底，第二布线层和第二金属层，其中形成处理在像素区域获得的像素信号的信号处理电路。 将逻辑元件层压到成像元件，使得第一金属层和第二金属层彼此接合，并且第一金属层和第二金属层形成在除了穿透电极层 穿透成像元件的接合表面并形成逻辑元件。
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公开(公告)号：US5991261A
公开(公告)日：1999-11-23
申请号：US988322
申请日：1997-12-10
申请人： Keiichi Maeda , Akira Kato
发明人： Keiichi Maeda , Akira Kato
CPC分类号： G11B23/0303
摘要： A disc cartridge 1 for installing a rotary disc has a write inhibit tab 57 which is provided to be slid and indicates a writable or nonwritable status of the disc by its position. The write inhibit tab is comprised of a main body 58, upper and lower slide portions 65 through 68 formed respectively on upper and lower side ends of the main body, groove shaped intermediate slide portions 69 and 70 formed between the upper and lower slide portions, first projections 63 and 64 formed at distal ends of elastic arms extended from the main body, and second projections 71 and 72 formed on the intermediate slide portions. When the write inhibit tab is used for a disc cartridge of an unremovable disc, the upper and lower slide portions and the first projections are used, and when the write inhibit tab is used for a disc cartridge of a removable disc, the intermediate slide portions and the second projections are used.
摘要翻译： 用于安装旋转盘的盘盒1具有写入禁止片57，其被设置为滑动，并通过其位置指示盘的可写或不可写状态。 写禁止片包括主体58，分别形成在主体的上侧和下侧端的上下滑动部分65至68，形成在上滑动部分和下滑动部分之间的凹槽形中间滑动部分69和70， 形成在从主体延伸的弹性臂的前端的第一突起63和64以及形成在中间滑动部上的第二突起71和72。 当写禁止片用于不可移动盘的盘盒时，使用上下滑动部分和第一突起，当写禁止片用于可拆卸盘的盘盒时，中间滑动部分 并使用第二个投影。
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8.发明授权Copper based sintered contact material and double-layered sintered contact member 有权铜基烧结接触材料和双层烧结接触部件公开(公告)号：US07261951B2
公开(公告)日：2007-08-28
申请号：US10762243
申请日：2004-01-23
CPC分类号： C22C32/00 , C22C9/02 , C22C9/06 , C22C9/08 , F16C33/043 , F16C33/121 , F16C2204/10 , Y10S384/91 , Y10S384/912 , Y10S384/913 , Y10T428/12063 , Y10T428/12535 , Y10T428/12576 , Y10T428/12611 , Y10T428/12903 , Y10T428/12917
摘要： With the objectives of alleviating the property of attacking on the mating member by scratching-off of local agglutinates on the sliding contact surface, achieving improved wear resistance, and achieving improved seizure resistance through restraint of frictional heat generation by a hard phase, a copper based sintered contact material contains shock-resistant ceramics in an amount of 0.05 to less than 0.5 wt % as non-metallic particles composed of one or more substances selected from pulverized oxides, carbides and nitrides. The shock-resistant ceramics are comprised of SiO2 and/or two or more substances selected from SiO2, Al2O3, LiO2, TiO2 and MgO.
摘要翻译： 为了通过刮擦滑动接触表面上的局部凝集物来减轻攻击配合构件的性能，实现改进的耐磨性，并且通过限制硬质相的摩擦发热来获得提高的抗咬合性， 作为由选自粉碎的氧化物，碳化物和氮化物中的一种或多种物质组成的非金属粒子，烧结接触材料含有0.05至小于0.5重量％的抗冲击陶瓷。 耐冲击陶瓷由SiO 2和/或两种或更多种选自SiO 2，Al 2 O 3的物质组成 LiO 2，TiO 2和MgO。
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9.发明申请公开(公告)号：US20110157446A1
公开(公告)日：2011-06-30
申请号：US12970065
申请日：2010-12-16
申请人： Hiroto Kasai , Tatsuya Minakawa , Yuichi Aki , Makoto Hashimoto , Ayumu Taguchi , Takeshi Yamasaki , Isao Ichimura , Keiichi Maeda
发明人： Hiroto Kasai , Tatsuya Minakawa , Yuichi Aki , Makoto Hashimoto , Ayumu Taguchi , Takeshi Yamasaki , Isao Ichimura , Keiichi Maeda
CPC分类号： H01L27/14632 , G01N21/0303 , G01N21/6454 , G01N2021/6482 , H01L27/14629 , H01L27/14634 , H01L27/14687 , H01L2224/48091 , H01L2924/00014
摘要： An image sensor is provided. The image sensor includes a photoelectric conversion portion including a light receiving element; and a well region defined by a wall structure that is formed integrally on the photoelectric conversion portion, wherein the well region is positioned to correspond to the light receiving element of the photoelectric conversion portion. An image sensor device and methods of manufacture are also provided.
摘要翻译： 提供图像传感器。 图像传感器包括：光电转换部分，包括光接收元件; 以及由光电转换部一体地形成的壁结构限定的阱区域，其中，所述阱区域被定位成对应于所述光电转换部分的光接收元件。 还提供了一种图像传感器装置和制造方法。
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公开(公告)号：US07087318B2
公开(公告)日：2006-08-08
申请号：US10762237
申请日：2004-01-23
CPC分类号： C22C32/00 , C22C9/02 , C22C9/06 , C22C9/08 , F16C33/043 , F16C33/121 , F16C2204/10 , Y10S384/91 , Y10S384/912 , Y10S384/913 , Y10T428/12063 , Y10T428/12535 , Y10T428/12576 , Y10T428/12611 , Y10T428/12903 , Y10T428/12917
摘要： With the objectives of alleviating the property of attacking on the mating member by scratching-off of local agglutinates on the sliding contact surface, achieving improved wear resistance, and achieving improved seizure resistance through restraint of frictional heat generation by a hard phase, a copper based sintered contact material contains shock-resistant ceramics in an amount of 0.05 to less than 0.5 wt % as non-metallic particles composed of one or more substances selected from pulverized oxides, carbides and nitrides. The shock-resistant ceramics are comprised of SiO2 and/or two or more substances selected from SiO2, Al2O3, LiO2, TiO2 and MgO.
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