摘要:
A PVD target structure for use in physical vapor deposition. The PVD target structure includes a consumable slab of source material and one or more detectors for indicating when the slab of source material is approaching or has been reduced to a given quantity representing a service lifetime endpoint of the target structure.
摘要:
A PVD target structure for use in physical vapor deposition. The PVD target structure includes a consumable slab of source material and one or more detectors for indicating when the slab of source material is approaching or has been reduced to a given quantity representing a service lifetime endpoint of the target structure.
摘要:
An adjustable anode assembly for a wet processing apparatus to allow selective tuning of the electrical field density distribution within a wet process chemical of the apparatus, which in turn allows the process specification or specifications to be selectively varied across the process surface of a wafer when processed by the apparatus. The adjustable anode assembly includes an anode which may be divided into several plates, at least one of which is capable of being moved from a first plane to at least a second plane.
摘要:
A method for forming a tube-based detector for signaling when a PVD target is reduced to a predetermined quantity of the PVD target material includes providing a mold member having an inner molding member and an outer molding member defining a space therebetween, melting a desired tube material, injecting the molten tube material into the space between the inner molding member and the outer molding member, cooling the molten tube material, removing the tube from the mold member after the molten tube material has cooled and solidified into a tube, embedding the tube in the physical vapor deposition target, wherein the tube forms an enclosure of the tube-based detector.
摘要:
A method for forming a tube-based detector for signaling when a PVD target is reduced to a predetermined quantity of the PVD target material includes providing a mold member having an inner molding member and an outer molding member defining a space therebetween, melting a desired tube material, injecting the molten tube material into the space between the inner molding member and the outer molding member, cooling the molten tube material, removing the tube from the mold member after the molten tube material has cooled and solidified into a tube, embedding the tube in the physical vapor deposition target, wherein the tube forms an enclosure of the tube-based detector.
摘要:
A PVD target structure for use in physical vapor deposition. The PVD target structure includes a consumable slab of source material and one or more detectors for indicating when the slab of source material is approaching or has been reduced to a given quantity representing a service lifetime endpoint of the target structure. Each detector includes an enclosure which may be made by forming a plurality of bores in a bulk material and separating the bulk material into a plurality of discrete enclosure units each including one of the bores. Alternatively, the enclosure of the detector may be made using a mold having one or more mold members and an extrusion, casting, electrical chemical plating, and/or sheet forming method.
摘要:
A PVD target structure for use in physical vapor deposition. The PVD target structure includes a consumable slab of source material and one or more detectors for indicating when the slab of source material is approaching or has been reduced to a given quantity representing a service lifetime endpoint of the target structure. Each detector includes an enclosure which may be made by forming a plurality of bores in a bulk material and separating the bulk material into a plurality of discrete enclosure units each including one of the bores. Alternatively, the enclosure of the detector may be made using a mold having one or more mold members and an extrusion, casting, electrical chemical plating, and/or sheet forming method.
摘要:
A adjustable upper coil or electrode for a reaction chamber apparatus useable in semiconductor processing, is constructed so that its shape may be selectively changed or so at least two portions thereof may be selectively driven at different power and/or frequencies. The adjustable upper coil or electrode, therefore, enables the plasma density distribution in the reaction chamber apparatus to be selectively controlled.
摘要:
A adjustable upper coil or electrode for a reaction chamber apparatus useable in semiconductor processing, is constructed so that its shape may be selectively changed or so at least two portions thereof may be selectively driven at different power and/or frequencies. The adjustable upper coil or electrode, therefore, enables the plasma density distribution in the reaction chamber apparatus to be selectively controlled.
摘要:
A gas distribution apparatus includes a first plate and a second plate comprising a plurality of first openings and second openings, respectively. The second plate is disposed in overlapping relation with the first plate. Overlaps of the first openings and the second openings form third openings, which provide a first gas distribution pattern at a first orientation of the plates relative to one another and a second gas distribution pattern at a second orientation different than the first orientation.