摘要:
A solid-state imaging device includes: a light-receiving pixel part configured to be formed on a semiconductor substrate; a black-level reference pixel part configured to be formed on the semiconductor substrate; and a multilayer interconnect part configured to be provided over the semiconductor substrate. The multilayer interconnect part includes an insulating layer formed over the semiconductor substrate and metal interconnect layers formed as a plurality of layers in the insulating layer. The multilayer interconnect part has a first light-blocking film formed above an area between first metal interconnects of a first metal interconnect layer as one of the metal interconnect layers above the black-level reference pixel part, and a second light-blocking film that is connected to the first light-blocking film and is formed of a second metal interconnect layer over the first metal interconnect layer.
摘要:
A solid-state imaging device with a multi-pixel sharing structure, wherein the area of each photoelectric conversion element can be secured independent of a reduction in area of each pixel. A solid-state imaging device including photoelectric conversion elements arranged in a two-dimensional array and voltage conversion elements for converting charge produced by photoelectric conversion through the corresponding photoelectric conversion elements into voltage.
摘要:
There is provided a solid-state imaging device including a substrate of which surface is provided with a pixel area where a plurality of pixels arranged, each pixel including a photoelectric converting element to receive light from a subject image and perform photoelectric conversion on the received light to generate signal charge, and a surrounding area that is positioned around the pixel area and that includes a surrounding circuit to process the signal charge generated by the photoelectric converting elements. The solid-state imaging device includes a color filter facing the substrate so as to receive the light from the subject image in a surface corresponding to the surface of the substrate and to allow the light to transmit therethrough onto the surface of the substrate. The color filter includes a first colored layer and a second colored layer.
摘要:
Object To provide a passive ultrasonic tag and an ultrasonic reading system that are constructed more simply and record and/or read information more reliably by using ultrasonic waves for transmission/reception.Solving Means A passive ultrasonic tag 100 according to a first embodiment of this invention includes a tag body 102. The tag body has two or more holes (106, 108, 110) disposed extensively on a surface 104 of the tag body. The holes have bottoms (112, 114, 116) at predetermined depths (d1, d2, d3) from the surface of the tag body (z). The depths of at least two of the two or more holes are set to different values. As a result, when a three-dimensional range including surfaces and bottoms of the two holes is scanned using ultrasonic waves, the ultrasonic waves are reflected in different manners (R1, R2, R3) on the basis of the depths of the two holes. This allows information to be recorded and read.
摘要:
A solid-state imaging device is provided. The solid-state imaging device includes an imaging region having a plurality of pixels arranged on a semiconductor substrate, in which each of the pixels includes a photoelectric converting portion and a charge converting portion for converting a charge generated by photoelectric conversion into a pixel signal and blooming is suppressed by controlling a substrate voltage of the semiconductor substrate.
摘要:
A solid-state imaging device is provided. The solid-state imaging device includes an imaging area that includes arrayed pixels having photoelectric converting units and transistor elements; and a peripheral circuit, in which a wiring line in the imaging area that is shifted based on pupil correction amount and a wiring line in the peripheral circuit that is not shifted are connected through a connection expanded portion integrally formed with one or both of the wiring lines.
摘要:
A solid-state image pickup device includes a pixel unit in which a plurality of photoelectric conversion elements having different sensitivities are arranged; and a pixel reading unit configured to read and add output signals from the plurality of photoelectric conversion elements in the pixel unit, and to obtain an output signal seemingly from one pixel. The pixel unit includes an absorbing unit configured to absorb overflowing electric charge from a photoelectric conversion element with a high sensitivity.
摘要:
Disclosed is a solid-state imaging device which includes a plurality of pixels in an arrangement, each of the pixels including a photoelectric conversion element, pixel transistors including a transfer transistor, and a floating diffusion region, in which the channel width of transfer gate of the transfer transistor is formed to be larger on a side of the floating diffusion region than on a side of the photoelectric conversion element.
摘要:
A solid state imaging device including: a pixel region that is formed on a light incidence side of a substrate and to which a plurality of pixels that include photoelectric conversion units is arranged; a peripheral circuit unit that is formed in a lower portion in the substrate depth direction of the pixel region and that includes an active element; and a light shielding member that is formed between the pixel region and the peripheral circuit unit and that shields the incidence of light, emitted from an active element, to the photoelectric conversion unit.
摘要:
A camera with a solid-state imaging device which includes a plurality of pixels in an arrangement, each of the pixels including a photoelectric conversion element, pixel transistors including a transfer transistor, and a floating diffusion region, in which the channel width of transfer gate of the transfer transistor is formed to be larger on a side of the floating diffusion region than on a side of the photoelectric conversion element.