公开(公告)号：US07612452B2

公开(公告)日：2009-11-03

申请号：US11850332

申请日：2007-09-05

申请人： Yoshiyuki Ohba ,  Toshihiko Hayashi

发明人： Yoshiyuki Ohba ,  Toshihiko Hayashi

IPC分类号： H01L23/52

CPC分类号： H01L21/76831 ,  H01L21/76826 ,  H01L21/76835 ,  H01L21/76844 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76873 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device includes: the first step of forming, in an insulating film provided on a substrate, a recess that is porositized at least at inner walls; the second step of forming an alloy layer made of copper and a metal other than copper so as to cover the inner walls of the recess; the third step of burying a conductive layer made primarily of copper in the recess provided with the alloy layer; the fourth step of subjecting the thus treated substrate to thermal treatment to cause the metal in the alloy layer to react with a constituent component of the insulating film to form a barrier film made of a metal compound having Cu diffusion barrier properties.

摘要翻译： 一种制造半导体器件的方法包括：第一步骤，在设置在基板上的绝缘膜中形成至少在内壁形成孔的凹部; 形成由铜和铜以外的金属制成的合金层以覆盖凹部的内壁的第二步骤; 在设置有合金层的凹部中埋设主要由铜制成的导电层的第三步骤; 对经过处理的基板进行热处理以使合金层中的金属与绝缘膜的构成成分反应的第四步骤形成由具有Cu扩散阻挡性的金属化合物制成的阻挡膜。

公开(公告)号：US20060019485A1

公开(公告)日：2006-01-26

申请号：US11186657

申请日：2005-07-19

申请人： Naoki Komai ,  Toshihiko Hayashi

发明人： Naoki Komai ,  Toshihiko Hayashi

IPC分类号： H01L21/4763

CPC分类号： H01L21/76835 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76844 ,  H01L21/76862

摘要： A multi-layer wiring structure including an upper layer wiring (second buried wiring) connected to a buried wiring (first buried wiring) in lower layer wiring grooves (first wiring grooves) through connection conductors, wherein a protective film capable of enduring a cleaning treatment with hydrogen radicals or hydrogen plasma applied to the surface of the first buried wiring at the time of forming the connection conductors is formed on the inside surfaces of the wiring grooves to be filled with he second buried wiring and the wiring connection holes to be filled with the connection conductors which surfaces are liable to be eroded upon exposure to the atmosphere used in the cleaning treatment, whereby erosion of the insulation layers at the time of the cleaning is obviated, sufficient cleaning can be performed, and deterioration of characteristics can be improved.

摘要翻译： 一种多层布线结构，包括通过连接导体连接到下层布线槽（第一布线槽）中的埋地布线（第一掩埋布线）的上层布线（第二掩埋布线），其中能够承受清洁处理的保护膜 在形成连接导体时，在第一埋地布线的表面上施加氢自由基或氢等离子体形成在布线槽的内表面上，并填充第二掩埋布线和要填充的布线连接孔 这些连接导体在暴露于清洁处理中使用的气氛时易于被侵蚀，从而消除了清洁时的绝缘层的腐蚀，可以进行充分的清洁，并且可以提高特性的劣化。

公开(公告)号：US4612977A

公开(公告)日：1986-09-23

申请号：US765820

申请日：1985-08-15

申请人： Toshihiko Hayashi ,  Yoshitomi Matsuzaki

发明人： Toshihiko Hayashi ,  Yoshitomi Matsuzaki

IPC分类号： B60K11/04 ,  F01P11/02 ,  F28F9/00 ,  F28F9/02 ,  F16K5/00

CPC分类号： B60K11/04 ,  F28F2265/06

摘要： A collar member disposed about a drain bore in the radiator. A drain cock is received within the collar member and has a portion which enters the drain hose is fixed to a drain bore of the radiator and seals the drain bore when tightened. An axial groove in the drain cock places the interior of the radiator in communication with a chamber within the collar when the drain cock is loosened, so that fluid may be drained from the radiator through the chamber and the drain hose. A hose holder is connected to a fan shroud to hold a portion of the drain hose in place.

摘要翻译： 围绕散热器中的排水孔设置的轴环构件。 排水旋塞容纳在轴环构件内并且具有进入排水软管的部分固定到散热器的排水孔并在拧紧时密封排水孔。 当排放旋塞松开时，排水旋塞中的轴向凹槽使散热器的内部与轴环内的腔连通，使得流体可以通过腔室和排水软管从散热器排出。 软管支架连接到风扇罩以将排水软管的一部分固定到位。

公开(公告)号：US4428494A

公开(公告)日：1984-01-31

申请号：US434726

申请日：1982-10-18

申请人： Kazumi Hirota ,  Yotaro Tsutsumi ,  Senji Itoh ,  Tadahiko Katsura ,  Kikuo Matsuoka ,  Ichiro Hori ,  Toshihiko Hayashi

发明人： Kazumi Hirota ,  Yotaro Tsutsumi ,  Senji Itoh ,  Tadahiko Katsura ,  Kikuo Matsuoka ,  Ichiro Hori ,  Toshihiko Hayashi

IPC分类号： B65D17/28 ,  B65D20060101 ,  B65D17/34 ,  B65D17/347 ,  B65D17/353 ,  B65D17/40 ,  B65D17/42 ,  B65D17/50 ,  B65D65/32 ,  B65D77/30 ,  B65D85/72

CPC分类号： B65D17/163

摘要： Disclosed is an easily openable heat seal lid for sealing a vessel proper by forming a heat-sealed portion between the lid and the vessel proper, which comprises a laminate comprising at least an inner face member composed of a thermoplastic resin and a metal foil, wherein scores defining a portion to be opened are formed on the side inner than the portion to be heat-sealed so that the scores extend to the midway of the thickness direction of the metal foil, an opening tab is formed on the portion of the lid to be opened through a bonding fulcrum portion composed of a thermoplastic resin hot adhesive so that the push-tearing top end of the opening tab is located on the scores, and the peel strength between the opening tab and the lid in said bonding portion is at least 0.4 Kg/5 mm.

摘要翻译： 公开了一种用于通过在盖和容器本体之间形成热密封部分来适当地密封容器的容易打开的热封盖，其包括至少包括由热塑性树脂和金属箔构成的内表面构件的层压体，其中 在被热封部分的一侧形成有要打开的部分的分数，使得分数延伸到金属箔的厚度方向的中间，在盖的部分上形成开口凸片， 通过由热塑性树脂热粘合剂构成的接合支点部分打开，使得开口舌片的推拉顶端位于刻痕上，并且所述接合部分中的开口接片和盖子之间的剥离强度至少为 0.4公斤/ 5毫米。

公开(公告)号：US20120199930A1

公开(公告)日：2012-08-09

申请号：US13362758

申请日：2012-01-31

申请人： Toshihiko Hayashi

发明人： Toshihiko Hayashi

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/14636 ,  H01L27/1461 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/1469

摘要： Disclosed herein is a solid-state imaging device including: a laminated semiconductor chip configured to be obtained by bonding two or more semiconductor chip sections to each other and be obtained by bonding at least a first semiconductor chip section in which a pixel array and a multilayer wiring layer are formed and a second semiconductor chip section in which a logic circuit and a multilayer wiring layer are formed to each other in such a manner that the multilayer wiring layers are opposed to each other and are electrically connected to each other; and a light blocking layer configured to be formed by an electrically-conductive film of the same layer as a layer of a connected interconnect of one or both of the first and second semiconductor chip sections near bonding between the first and second semiconductor chip sections. The solid-state imaging device is a back-illuminated solid-state imaging device.

摘要翻译： 本文公开了一种固态成像装置，其包括：层叠半导体芯片，其被配置为通过将两个或更多个半导体芯片部彼此接合而获得，并且可以通过至少接合第一半导体芯片部分获得，所述第一半导体芯片部分中的像素阵列和多层 形成布线层，其中以多层布线层彼此相对并彼此电连接的方式彼此形成逻辑电路和多层布线层的第二半导体芯片部分; 以及遮光层，被配置为由与第一和第二半导体芯片部分之间接近接合的第一和第二半导体芯片部分之一或两者的连接互连层的相同层的导电膜形成。 固态成像装置是背照式固态成像装置。

公开(公告)号：US08669602B2

公开(公告)日：2014-03-11

申请号：US13362758

申请日：2012-01-31

申请人： Toshihiko Hayashi

发明人： Toshihiko Hayashi

IPC分类号： H01L31/062

CPC分类号： H01L27/14636 ,  H01L27/1461 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/1469

摘要： Disclosed herein is a solid-state imaging device including: a laminated semiconductor chip configured to be obtained by bonding two or more semiconductor chip sections to each other and be obtained by bonding at least a first semiconductor chip section in which a pixel array and a multilayer wiring layer are formed and a second semiconductor chip section in which a logic circuit and a multilayer wiring layer are formed to each other in such a manner that the multilayer wiring layers are opposed to each other and are electrically connected to each other; and a light blocking layer configured to be formed by an electrically-conductive film of the same layer as a layer of a connected interconnect of one or both of the first and second semiconductor chip sections near bonding between the first and second semiconductor chip sections. The solid-state imaging device is a back-illuminated solid-state imaging device.

摘要翻译： 本文公开了一种固态成像装置，其包括：层叠半导体芯片，其被配置为通过将两个或更多个半导体芯片部彼此接合而获得，并且可以通过至少接合第一半导体芯片部分获得，所述第一半导体芯片部分中的像素阵列和多层 形成布线层，其中以多层布线层彼此相对并彼此电连接的方式彼此形成逻辑电路和多层布线层的第二半导体芯片部分; 以及遮光层，被配置为由与第一和第二半导体芯片部分之间接近接合的第一和第二半导体芯片部分之一或两者的连接互连层的相同层的导电膜形成。 固态成像装置是背照式固态成像装置。

公开(公告)号：US08564033B2

公开(公告)日：2013-10-22

申请号：US12345876

申请日：2008-12-30

申请人： Toshihiko Hayashi ,  Yoshiharu Kudoh

发明人： Toshihiko Hayashi ,  Yoshiharu Kudoh

IPC分类号： H01L31/0216

CPC分类号： H01L27/14636 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/0216 ,  H01L31/0232 ,  H01L31/18

摘要： A solid-state imaging device includes: a light-receiving pixel part configured to be formed on a semiconductor substrate; a black-level reference pixel part configured to be formed on the semiconductor substrate; and a multilayer interconnect part configured to be provided over the semiconductor substrate. The multilayer interconnect part includes an insulating layer formed over the semiconductor substrate and metal interconnect layers formed as a plurality of layers in the insulating layer. The multilayer interconnect part has a first light-blocking film formed above an area between first metal interconnects of a first metal interconnect layer as one of the metal interconnect layers above the black-level reference pixel part, and a second light-blocking film that is connected to the first light-blocking film and is formed of a second metal interconnect layer over the first metal interconnect layer.

公开(公告)号：US08373786B2

公开(公告)日：2013-02-12

申请号：US12434340

申请日：2009-05-01

申请人： Yoichi Otsuka ,  Yoshiyuki Enomoto ,  Kazunori Nagahata ,  Tadayuki Kimura ,  Toshihiko Hayashi ,  Kenichi Aoyagi ,  Kiyotaka Tabuchi ,  Iwao Sugiura ,  Kensaku Maeda

发明人： Yoichi Otsuka ,  Yoshiyuki Enomoto ,  Kazunori Nagahata ,  Tadayuki Kimura ,  Toshihiko Hayashi ,  Kenichi Aoyagi ,  Kiyotaka Tabuchi ,  Iwao Sugiura ,  Kensaku Maeda

IPC分类号： H04N5/335 ,  H04N9/083 ,  H01L31/113 ,  H01L21/311

CPC分类号： H01L27/14625 ,  G02B5/201 ,  G02B5/223 ,  H01L27/14621 ,  H01L27/14685

摘要： A solid-state imaging device has: an imaging region in which a plurality of pixels each having a photoelectric conversion element are arranged, and a color filter. The color filter includes: filter components of a first color (2G), filter components of a second color (2R) formed by self-alignment and each being surrounded by the filter components of the first color (2G), and filter components of a third color (2B) formed by self-alignment and each being surrounded by the filter components of the first color (2G).

摘要翻译： 固态成像装置具有：配置有各自具有光电转换元件的多个像素的成像区域和滤色器。 滤色器包括：第一颜色（2G）的滤色镜部件，通过自对准形成的并且由第一颜色（2G）的滤光片部件包围的第二颜色（2R）的滤色镜部件，以及 第三颜色（2B）通过自对准形成，并且每个由第一颜色（2G）的滤光器部件包围。

公开(公告)号：US20080173547A1

公开(公告)日：2008-07-24

申请号：US11832931

申请日：2007-08-02

申请人： Yoshiyuki Ohba ,  Toshihiko Hayashi

发明人： Yoshiyuki Ohba ,  Toshihiko Hayashi

IPC分类号： C25D5/02

CPC分类号： H01L21/76873 ,  H01L21/76808 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76864 ,  H01L21/76867 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed herein is a method for manufacturing a semiconductor device, the method including the steps of: forming a recess in an insulating film provided over a substrate; forming a plating seed layer in such a way that an inner wall of the recess is covered, the plating seed layer arising from sequential deposition of an alloy layer composed of copper and a metal other than copper and a conductive layer composed mainly of copper; burying a conductive layer composed mainly of copper by plating in the recess on which the plating seed layer is provided; and carrying out heat treatment to cause the metal in the alloy layer to react with a constituent in the insulating film, to thereby form a barrier film composed of a metal compound having a copper diffusion barrier function at an interface between the alloy layer and the insulating film.

摘要翻译： 本发明公开了一种制造半导体器件的方法，该方法包括以下步骤：在设置在衬底上的绝缘膜中形成凹陷; 以覆盖凹部的内壁的方式形成电镀种子层，由铜和铜以外的金属的合金层的顺序沉积而产生的电镀种子层和主要由铜构成的导电层; 通过电镀将主要由铜构成的导电层埋设在设置有镀覆种子层的凹部中; 进行热处理，使合金层中的金属与绝缘膜中的成分反应，从而在合金层和绝缘层之间的界面处形成由具有铜扩散阻挡功能的金属化合物构成的阻挡膜 电影。

公开(公告)号：US20080054467A1

公开(公告)日：2008-03-06

申请号：US11850332

申请日：2007-09-05

申请人： Yoshiyuki Ohba ,  Toshihiko Hayashi

发明人： Yoshiyuki Ohba ,  Toshihiko Hayashi

IPC分类号： H01L23/52 ,  H01L21/4763

CPC分类号： H01L21/76831 ,  H01L21/76826 ,  H01L21/76835 ,  H01L21/76844 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76873 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device includes: the first step of forming, in an insulating film provided on a substrate, a recess that is porositized at least at inner walls; the second step of forming an alloy layer made of copper and a metal other than copper so as to cover the inner walls of the recess; the third step of burying a conductive layer made primarily of copper in the recess provided with the alloy layer; the fourth step of subjecting the thus treated substrate to thermal treatment to cause the metal in the alloy layer to react with a constituent component of the insulating film to form a barrier film made of a metal compound having Cu diffusion barrier properties.

摘要翻译： 一种制造半导体器件的方法包括：第一步骤，在设置在基板上的绝缘膜中形成至少在内壁形成孔的凹部; 形成由铜和铜以外的金属制成的合金层以覆盖凹部的内壁的第二步骤; 在设置有合金层的凹部中埋设主要由铜制成的导电层的第三步骤; 对经过处理的基板进行热处理以使合金层中的金属与绝缘膜的构成成分反应的第四步骤形成由具有Cu扩散阻挡性的金属化合物制成的阻挡膜。