公开(公告)号：US20130200494A1

公开(公告)日：2013-08-08

申请号：US13366340

申请日：2012-02-05

申请人： Zhiying CHEN ,  Jianping ZHAO ,  Lee CHEN ,  Merritt FUNK ,  Radha SUNDARARAJAN

发明人： Zhiying CHEN ,  Jianping ZHAO ,  Lee CHEN ,  Merritt FUNK ,  Radha SUNDARARAJAN

IPC分类号： H01L29/93 ,  H01L21/329

CPC分类号： H01J37/32807 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642

摘要： A replaceable chamber element for use in a plasma processing system, such as a plasma etching system, is described. The replaceable chamber element includes a chamber component configured to be exposed to plasma in a plasma processing system, wherein the chamber component is fabricated to include a semiconductor junction, and wherein a capacitance of the chamber component is varied when a voltage is applied across the semiconductor junction.

摘要翻译： 描述了用于诸如等离子体蚀刻系统的等离子体处理系统中的可替换室元件。 可更换腔室元件包括被配置为在等离子体处理系统中暴露于等离子体的室部件，其中腔室部件被制造为包括半导体结，并且其中当跨越半导体施加电压时腔室部件的电容变化 交界处

公开(公告)号：US20130203258A1

公开(公告)日：2013-08-08

申请号：US13366341

申请日：2012-02-05

申请人： Zhiying CHEN ,  Jianping ZHAO ,  Lee CHEN ,  Merritt FUNK ,  Radha SUNDARARAJAN

发明人： Zhiying CHEN ,  Jianping ZHAO ,  Lee CHEN ,  Merritt FUNK ,  Radha SUNDARARAJAN

IPC分类号： H01L21/3065 ,  B32B9/04 ,  B05D5/12 ,  H05H1/24

CPC分类号： H01J37/32495 ,  H01J37/32504

摘要： A replaceable chamber element for use in a plasma processing system, such as a plasma etching system, is described. The replaceable chamber element includes a chamber component configured to be exposed to plasma in a plasma processing system, wherein the chamber component is fabricated of a ferroelectric material.

摘要翻译： 描述了用于诸如等离子体蚀刻系统的等离子体处理系统中的可替换室元件。 可替换室元件包括腔室部件，其被构造成在等离子体处理系统中暴露于等离子体，其中室部件由铁电材料制成。

公开(公告)号：US20110057562A1

公开(公告)日：2011-03-10

申请号：US12555080

申请日：2009-09-08

申请人： Lee CHEN ,  Jianping ZHAO ,  Ronald V. BRAVENEC ,  Merritt FUNK

发明人： Lee CHEN ,  Jianping ZHAO ,  Ronald V. BRAVENEC ,  Merritt FUNK

IPC分类号： H05H1/26 ,  H01P3/00

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/3222 ,  H01L21/67005 ,  H01Q13/10

摘要： A surface wave plasma (SWP) source is described. The SWP source comprises an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma. The EM wave launcher comprises a slot antenna having a plurality of slots. The SWP source further comprises a first recess configuration formed in the plasma surface, wherein the first recess configuration is substantially aligned with a first arrangement of slots in the plurality of slots, and a second recess configuration formed in the plasma surface, wherein the second recess configuration is either partly aligned with a second arrangement of slots in the plurality of slots or not aligned with the second arrangement of slots in the plurality of slots. A power coupling system is coupled to the EM wave launcher and configured to provide the EM energy to the EM wave launcher for forming the plasma.

摘要翻译： 描述了表面波等离子体（SWP）源。 SWP源包括电磁（EM）波发射器，其被配置为通过在邻近等离子体的EM波发射器的等离子体表面上产生表面波来将期望的EM波模式中的EM能量耦合到等离子体。 EM波发射器包括具有多个槽的缝隙天线。 SWP源还包括形成在等离子体表面中的第一凹陷构型，其中第一凹槽构型基本上与多个槽中的槽的第一布置对准，以及形成在等离子体表面中的第二凹槽构型，其中第二凹槽 配置部分地与多个槽中的槽的第二布置部分对准或者不与多个槽中的槽的第二布置对准。 功率耦合系统耦合到EM波发射器并且被配置为向用于形成等离子体的EM波发射器提供EM能量。

公开(公告)号：US20120091097A1

公开(公告)日：2012-04-19

申请号：US13275929

申请日：2011-10-18

申请人： Lee CHEN ,  Jianping ZHAO

发明人： Lee CHEN ,  Jianping ZHAO

IPC分类号： C23F1/00 ,  C23F1/08

CPC分类号： H01L21/67069 ,  H01J37/32926 ,  H01J37/32972 ,  H01J37/3299 ,  H01J2237/334 ,  H01L21/67213 ,  H01L21/67253

摘要： The invention provide apparatus and methods for creating gate structures on a substrate in real-time using Vacuum Ultra-Violet (VUV) data and Electron Energy Distribution Function (EEDƒ) data and associated (VUV/EEDƒ)-related procedures in (VUV/EEDƒ) etch systems. The (VUV/EEDƒ)-related procedures can include multi-layer-multi-step processing sequences and (VUV/EEDƒ)-related models that can include Multi-Input/Multi-Output (MIMO) models.

摘要翻译： 本发明提供了在（VUV / EED f）中使用真空超紫（VUV）数据和电子能量分布函数（EED f）数据和相关（VUV / EED f）相关程序实时地在衬底上产生栅极结构的装置和方法。 ）蚀刻系统。 （VUV /EEDƒ）相关程序可以包括可以包括多输入/多输出（MIMO）模型的多层多步骤处理序列和（VUV /EEDƒ）相关模型。

公开(公告)号：US20110081503A1

公开(公告)日：2011-04-07

申请号：US12574117

申请日：2009-10-06

申请人： Jianping ZHAO ,  Lee CHEN

发明人： Jianping ZHAO ,  Lee CHEN

IPC分类号： C23C16/513 ,  B05D5/12 ,  C23C14/34 ,  C23C14/46

CPC分类号： H01L21/0212 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831

摘要： A method of integrating a fluorine-based dielectric with a metallization scheme is described. The method includes forming a fluorine-based dielectric layer on a substrate, forming a metal-containing layer on the substrate, and adding a buffer layer or modifying a composition of the fluorine-based dielectric layer proximate an interface between the fluorine-based dielectric layer and the metal-containing layer.

摘要翻译： 描述了一种将氟基电介质与金属化方案集成的方法。 该方法包括在基板上形成氟基电介质层，在基板上形成含金属层，并在氟基介电层之间的界面附近添加缓冲层或修饰氟基电介质层的组成 和含金属层。

公开(公告)号：US20120095586A1

公开(公告)日：2012-04-19

申请号：US13275964

申请日：2011-10-18

申请人： Lee CHEN ,  Jianping ZHAO

发明人： Lee CHEN ,  Jianping ZHAO

IPC分类号： G05B23/02 ,  C23F1/08

CPC分类号： H01L21/67069 ,  H01J37/32926 ,  H01J37/32972 ,  H01J37/3299 ,  H01J2237/334 ,  H01L21/67213 ,  H01L21/67253

摘要： The invention provides an apparatus and methods for creating gate structures on a substrate in real-time using Vacuum Ultra-Violet (VUV) data and Electron Energy Distribution Function (EEDf) data and associated (VUV/EEDf)-related procedures in (VUV/EEDf) etch systems. The (VUV/EEDf)-related procedures can include multi-layer-multi-step processing sequences and (VUV/EEDf)-related models that can include Multi-Input/Multi-Output (MIMO) models.

摘要翻译： 本发明提供了一种用于在（VUV / EEDf）数据和VUV / EEDf相关过程中实时使用真空紫外（VUV）数据和电子能量分布函数（EEDf）数据和相关（VUV / EEDf）相关程序实时地在衬底上产生栅极结构的装置和方法。 EEDf）蚀刻系统。 （VUV / EEDf）相关程序可以包括可以包括多输入/多输出（MIMO）模型的多层多步骤处理序列和（VUV / EEDf）相关模型。