公开(公告)号：US20120281452A1

公开(公告)日：2012-11-08

申请号：US13502832

申请日：2011-06-30

申请人： Zongliang Huo ,  Ming Liu ,  Manhong Zhang ,  Yanhua Wang ,  Shibing Long

发明人： Zongliang Huo ,  Ming Liu ,  Manhong Zhang ,  Yanhua Wang ,  Shibing Long

IPC分类号： H01L45/00 ,  G11C11/00

CPC分类号： H01L27/2409 ,  H01L27/2463

摘要： The present disclosure provides a resistive random memory cell and a resistive random memory. The resistive random memory cell comprises an upper electrode, a resistive layer, an intermediate electrode, an asymmetric tunneling barrier layer, and a lower electrode. The upper electrode, the resistive layer, and the intermediate electrode constitute a resistive storage portion. The intermediate electrode, the asymmetric tunneling barrier layer, and the lower electrode constitute a selection portion. The resistive storage portion and the selection portion share the intermediate electrode. The selection portion may be disposed above or under the resistive storage portion. The asymmetric tunneling barrier layer comprises at least two materials having different barrier heights, and is configured for rectifying forward tunneling current and reverse tunneling current flowing through the resistive random memory cell. The present disclosure uses the asymmetric tunneling barrier layer for rectifying, so as to enable selection of the resistive random memory cell. The method for manufacturing the asymmetric tunneling barrier layer does not involve doping or high-temperature annealing processes, and the thickness of the asymmetric tunneling barrier layer is relatively small, which helps 3D high-density integration of the resistive random memory.

摘要翻译： 本公开提供了电阻随机存储器单元和电阻随机存储器。 电阻随机存储单元包括上电极，电阻层，中间电极，不对称隧道势垒层和下电极。 上电极，电阻层和中间电极构成电阻存储部。 中间电极，不对称隧道势垒层和下电极构成选择部分。 电阻存储部分和选择部分共享中间电极。 选择部分可以设置在电阻存储部分的上方或下方。 非对称隧道势垒层包括具有不同势垒高度的至少两种材料，并且被配置用于整流流过电阻随机存储单元的正向隧穿电流和反向隧穿电流。 本公开使用非对称隧道势垒层进行整流，以便能够选择电阻随机存储单元。 制造不对称隧道势垒层的方法不涉及掺杂或高温退火工艺，并且不对称隧道势垒层的厚度相对较小，这有助于电阻随机存储器的3D高密度集成。

公开(公告)号：US08665631B2

公开(公告)日：2014-03-04

申请号：US13502832

申请日：2011-06-30

申请人： Zongliang Huo ,  Ming Liu ,  Manhong Zhang ,  Yanhua Wang ,  Shibing Long

发明人： Zongliang Huo ,  Ming Liu ,  Manhong Zhang ,  Yanhua Wang ,  Shibing Long

IPC分类号： G11C11/00

CPC分类号： H01L27/2409 ,  H01L27/2463

摘要： The present disclosure provides a resistive random memory cell and a resistive random memory. The resistive random memory cell comprises an upper electrode, a resistive layer, an intermediate electrode, an asymmetric tunneling barrier layer, and a lower electrode. The upper electrode, the resistive layer, and the intermediate electrode constitute a resistive storage portion. The intermediate electrode, the asymmetric tunneling barrier layer, and the lower electrode constitute a selection portion. The resistive storage portion and the selection portion share the intermediate electrode. The selection portion may be disposed above or under the resistive storage portion. The asymmetric tunneling barrier layer comprises at least two materials having different barrier heights, and is configured for rectifying forward tunneling current and reverse tunneling current flowing through the resistive random memory cell. The present disclosure uses the asymmetric tunneling barrier layer for rectifying, so as to enable selection of the resistive random memory cell. The method for manufacturing the asymmetric tunneling barrier layer does not involve doping or high-temperature annealing processes, and the thickness of the asymmetric tunneling barrier layer is relatively small, which helps 3D high-density integration of the resistive random memory.

摘要翻译： 本公开提供了电阻随机存储器单元和电阻随机存储器。 电阻随机存储单元包括上电极，电阻层，中间电极，不对称隧道势垒层和下电极。 上电极，电阻层和中间电极构成电阻存储部。 中间电极，不对称隧道势垒层和下电极构成选择部分。 电阻存储部分和选择部分共享中间电极。 选择部分可以设置在电阻存储部分的上方或下方。 非对称隧道势垒层包括具有不同势垒高度的至少两种材料，并且被配置用于整流流过电阻随机存储单元的正向隧穿电流和反向隧穿电流。 本公开使用非对称隧道势垒层进行整流，以便能够选择电阻随机存储单元。 制造不对称隧道势垒层的方法不涉及掺杂或高温退火工艺，并且不对称隧道势垒层的厚度相对较小，这有助于电阻随机存储器的3D高密度集成。

公开(公告)号：US20120140543A1

公开(公告)日：2012-06-07

申请号：US13223165

申请日：2011-08-31

申请人： Ming Liu ,  Qingyun Zuo ,  Shibing Long ,  Changqing Xie ,  Zongliang Huo

发明人： Ming Liu ,  Qingyun Zuo ,  Shibing Long ,  Changqing Xie ,  Zongliang Huo

IPC分类号： G11C17/06 ,  H01L21/8246

CPC分类号： H01L29/872 ,  G11C17/06 ,  H01L27/1021 ,  H01L29/861

摘要： The present invention relates to a one time programming memory and method of storage and manufacture of the same. It belongs to microelectronic memory technology and manufacture field. The one time programming memory comprises a diode (10) having a unidirectional conducting rectification characteristic and a variable-resistance memory (20) having a bipolar conversion characteristic. The diode (10) having the unidirectional conducting rectification characteristic and the variable-resistance memory (20) having the bipolar conversion characteristic are connected in series. The one time programming memory device of the present invention takes the bipolar variable-resistance memory (20) as a storage unit, programming the bipolar variable-resistance memory (20) into different resistance states so as to carry out multilevel storage, and takes the unidirectional conducting rectification diode (10) as a gating unit. The rectification characteristic of unidirectional conducting rectification diode (10) can not only enable the bipolar variable-resistance storage (20) to be programmed only once but also inhibit crosstalk in a cross-array structure. The one time programming memory of the present invention is suitable to integration of the cross-array structure. It has the advantages like a simple structure, easy integration and high density. It can achieve multilevel storage and reduce the cost, which contribute to widely spreading and application of the present invention.

摘要翻译： 本发明涉及一次性编程存储器及其存储和制造方法。 属于微电子存储技术和制造领域。 一次性编程存储器包括具有单向导通整流特性的二极管（10）和具有双极转换特性的可变电阻存储器（20）。 具有单向导通整流特性的二极管（10）和具有双极转换特性的可变电阻存储器（20）串联连接。 本发明的一次性编程存储装置将双极可变电阻存储器（20）作为存储单元，将双极可变电阻存储器（20）编程成不同的电阻状态，以进行多级存储，并且 单向导通整流二极管（10）作为选通单元。 单向导通整流二极管（10）的整流特性不仅可以使双极可变电阻存储器（20）只编程一次，而且可以抑制交叉阵列结构中的串扰。 本发明的一次性编程存储器适合于集成交叉阵列结构。 具有结构简单，易于集成，密度高等优点。 它可以实现多级存储并降低成本，这有助于本发明的广泛推广和应用。

公开(公告)号：US20120275220A1

公开(公告)日：2012-11-01

申请号：US13376925

申请日：2011-06-30

申请人： Ming Liu ,  Chenxi Zhu ,  Zongliang Huo ,  Feng Yan ,  Qin Wang ,  Shibing Long

发明人： Ming Liu ,  Chenxi Zhu ,  Zongliang Huo ,  Feng Yan ,  Qin Wang ,  Shibing Long

IPC分类号： H01L29/792 ,  G11C16/14 ,  G11C16/04 ,  H01L21/336

CPC分类号： H01L27/11582

摘要： The present disclosure relates to the field of microelectronics manufacture and memories. A three-dimensional multi-bit non-volatile memory and a method for manufacturing the same are disclosed. The memory comprises a plurality of memory cells constituting a memory array. The memory array may comprise: a gate stack structure; periodically and alternately arranged gate stack regions and channel region spaces; gate dielectric layers for discrete charge storage; periodically arranged channel regions; source doping regions and drain doping regions symmetrically arranged to each other; bit lines led from the source doping regions and the drain doping regions; and word lines led from the gate stack regions. The gate dielectric layers for discrete charge storage can provide physical storage spots to achieve single-bit or multi-bit operations, so as to achieve a high storage density. According to the present disclosure, the localized charge storage characteristic of the charge trapping layer and characteristics such as a longer effective channel length and a higher density of a vertical memory structure are utilized, to provide multiple storage spots in a single memory cell. Therefore, the storage density is improved while good performances such as high speed are ensured.

摘要翻译： 本公开涉及微电子制造领域和存储器。 公开了一种三维多位非易失性存储器及其制造方法。 存储器包括构成存储器阵列的多个存储单元。 存储器阵列可以包括：栅极堆叠结构; 定期和交替布置的栅极堆叠区域和沟道区域空间; 用于离散电荷存储的栅极电介质层; 定期布置的通道区域; 源极掺杂区域和漏极掺杂区域彼此对称布置; 源极掺杂区域和漏极掺杂区域引出的位线; 和从栅极堆栈区域引出的字线。 用于离散电荷存储的栅极电介质层可以提供物理存储点以实现单位或多位操作，从而实现高存储密度。 根据本公开，利用电荷俘获层的局部电荷存储特性以及垂直存储器结构的较长有效沟道长度和较高密度等特征，以在单个存储单元中提供多个存储点。 因此，存储密度得到改善，同时保证了诸如高速的良好性能。

公开(公告)号：US08705274B2

公开(公告)日：2014-04-22

申请号：US13376925

申请日：2011-06-30

申请人： Ming Liu ,  Chenxi Zhu ,  Zongliang Huo ,  Feng Yan ,  Qin Wang ,  Shibing Long

发明人： Ming Liu ,  Chenxi Zhu ,  Zongliang Huo ,  Feng Yan ,  Qin Wang ,  Shibing Long

IPC分类号： G11C16/04 ,  H01L21/336

CPC分类号： H01L27/11582

摘要： The present disclosure relates to the field of microelectronics manufacture and memories. A three-dimensional multi-bit non-volatile memory and a method for manufacturing the same are disclosed. The memory comprises a plurality of memory cells constituting a memory array. The memory array may comprise: a gate stack structure; periodically and alternately arranged gate stack regions and channel region spaces; gate dielectric layers for discrete charge storage; periodically arranged channel regions; source doping regions and drain doping regions symmetrically arranged to each other; bit lines led from the source doping regions and the drain doping regions; and word lines led from the gate stack regions. The gate dielectric layers for discrete charge storage can provide physical storage spots to achieve single-bit or multi-bit operations, so as to achieve a high storage density. According to the present disclosure, the localized charge storage characteristic of the charge trapping layer and characteristics such as a longer effective channel length and a higher density of a vertical memory structure are utilized, to provide multiple storage spots in a single memory cell. Therefore, the storage density is improved while good performances such as high speed are ensured.

摘要翻译： 本公开涉及微电子制造领域和存储器。 公开了一种三维多位非易失性存储器及其制造方法。 存储器包括构成存储器阵列的多个存储单元。 存储器阵列可以包括：栅极堆叠结构; 定期和交替布置的栅极堆叠区域和沟道区域空间; 用于离散电荷存储的栅极电介质层; 定期布置的通道区域; 源极掺杂区域和漏极掺杂区域彼此对称布置; 源极掺杂区域和漏极掺杂区域引出的位线; 和从栅极堆栈区域引出的字线。 用于离散电荷存储的栅极电介质层可以提供物理存储点以实现单位或多位操作，从而实现高存储密度。 根据本公开，利用电荷俘获层的局部电荷存储特性以及垂直存储器结构的较长有效沟道长度和较高密度等特征，以在单个存储单元中提供多个存储点。 因此，存储密度得到改善，同时保证了诸如高速的良好性能。

公开(公告)号：US08531861B2

公开(公告)日：2013-09-10

申请号：US13223165

申请日：2011-08-31

申请人： Ming Liu ,  Qingyun Zuo ,  Shibing Long ,  Changqing Xie ,  Zongliang Huo

发明人： Ming Liu ,  Qingyun Zuo ,  Shibing Long ,  Changqing Xie ,  Zongliang Huo

IPC分类号： G11C17/00

CPC分类号： H01L29/872 ,  G11C17/06 ,  H01L27/1021 ,  H01L29/861

摘要： One time programming memory and methods of storage and manufacture of the same are provided. Examples relate to microelectronic memory technology and manufacture. The one time programming memory includes a diode (10) having a unidirectional conducting rectification characteristic and a variable-resistance memory (20) having a bipolar conversion characteristic. The diode (10) having the unidirectional conducting rectification characteristic and the variable-resistance memory (20) having the bipolar conversion characteristic are connected in series. The one time programming memory device of this example takes the bipolar variable-resistance memory (20) as a storage unit, programming the bipolar variable-resistance memory (20) into different resistance states so as to carry out multilevel storage, and takes the unidirectional conducting rectification diode (10) as a gating unit. The rectification characteristic of unidirectional conducting rectification diode (10) can not only enable the bipolar variable-resistance storage (20) to be programmed only once but also inhibit crosstalk in a cross-array structure.

摘要翻译： 提供了一次编程存储器及其存储和制造方法。 实例涉及微电子存储器技术和制造。 一次编程存储器包括具有单向导通整流特性的二极管（10）和具有双极转换特性的可变电阻存储器（20）。 具有单向导通整流特性的二极管（10）和具有双极转换特性的可变电阻存储器（20）串联连接。 该实施例的一次性编程存储器件将双极可变电阻存储器（20）作为存储单元，将双极可变电阻存储器（20）编程成不同的电阻状态，以执行多级存储，并且采用单向 导通整流二极管（10）作为选通单元。 单向导通整流二极管（10）的整流特性不仅可以使双极可变电阻存储器（20）只编程一次，而且可以抑制交叉阵列结构中的串扰。

公开(公告)号：US08735245B2

公开(公告)日：2014-05-27

申请号：US13510467

申请日：2011-06-30

申请人： Hangbing Lv ,  Ming Liu ,  Shibing Long ,  Qi Liu ,  Yanhua Wang ,  Jiebin Niu

发明人： Hangbing Lv ,  Ming Liu ,  Shibing Long ,  Qi Liu ,  Yanhua Wang ,  Jiebin Niu

IPC分类号： H01L21/8239 ,  G11C11/21

CPC分类号： H01L27/101 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16

摘要： The present disclosure relates to the microelectronics field, and particularly, to a metal oxide resistive switching memory and a method for manufacturing the same. The method may comprise: forming a W-plug lower electrode above a MOS device; sequentially forming a cap layer, a first dielectric layer, and an etching block layer on the W-plug lower electrode; etching the etching block layer, the first dielectric layer, and the cap layer to form a groove for a first level of metal wiring; sequentially forming a metal oxide layer, an upper electrode layer, and a composite layer of a diffusion block layer/a seed copper layer/a plated copper layer in the groove for the first level of metal wiring; patterning the upper electrode layer and the composite layer by CMP, to form a memory cell and the first level of metal wiring in the groove in the first dielectric layer; and performing subsequent processes to complete the metal oxide resistive switching memory. According to the present disclosure, the manufacture process can be simplified, without incorporating additional exposure steps in the standard process, resulting in advantages such as reduced cost.

摘要翻译： 本公开涉及微电子领域，特别涉及金属氧化物电阻式开关存储器及其制造方法。 该方法可以包括：在MOS器件之上形成W形插塞下电极; 在W型插塞下电极上依次形成覆盖层，第一电介质层和蚀刻阻挡层; 蚀刻蚀刻阻挡层，第一介电层和盖层，以形成用于第一级金属布线的凹槽; 在用于第一级金属布线的槽中依次形成金属氧化物层，上电极层和扩散阻挡层/种子铜层/镀覆铜层的复合层; 通过CMP图案化上电极层和复合层，以在第一介电层中的沟槽中形成存储单元和第一级金属布线; 以及执行后续处理以完成金属氧化物电阻式切换存储器。 根据本公开，可以简化制造过程，而不在标准方法中引入额外的暴露步骤，导致诸如降低成本的优点。

公开(公告)号：US20120305883A1

公开(公告)日：2012-12-06

申请号：US13510467

申请日：2011-06-30

申请人： Hangbing Lv ,  Ming Liu ,  Shibing Long ,  Qi Liu ,  Yanhua Wang ,  Jiebin Niu

发明人： Hangbing Lv ,  Ming Liu ,  Shibing Long ,  Qi Liu ,  Yanhua Wang ,  Jiebin Niu

IPC分类号： H01L47/00 ,  H01L45/00

CPC分类号： H01L27/101 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16

摘要： The present disclosure relates to the microelectronics field, and particularly, to a metal oxide resistive switching memory and a method for manufacturing the same. The method may comprise: forming a W-plug lower electrode above a MOS device; sequentially forming a cap layer, a first dielectric layer, and an etching block layer on the W-plug lower electrode; etching the etching block layer, the first dielectric layer, and the cap layer to form a groove for a first level of metal wiring; sequentially forming a metal oxide layer, an upper electrode layer, and a composite layer of a diffusion block layer/a seed copper layer/a plated copper layer in the groove for the first level of metal wiring; patterning the upper electrode layer and the composite layer by CMP, to form a memory cell and the first level of metal wiring in the groove in the first dielectric layer; and performing subsequent processes to complete the metal oxide resistive switching memory. According to the present disclosure, the manufacture process can be simplified, without incorporating additional exposure steps in the standard process, resulting in advantages such as reduced cost.

摘要翻译： 本公开涉及微电子领域，特别涉及金属氧化物电阻式开关存储器及其制造方法。 该方法可以包括：在MOS器件之上形成W形插塞下电极; 在W型插塞下电极上依次形成覆盖层，第一电介质层和蚀刻阻挡层; 蚀刻蚀刻阻挡层，第一介电层和盖层，以形成用于第一级金属布线的凹槽; 在用于第一级金属布线的槽中依次形成金属氧化物层，上电极层和扩散阻挡层/种子铜层/镀覆铜层的复合层; 通过CMP图案化上电极层和复合层，以在第一介电层中的沟槽中形成存储单元和第一级金属布线; 以及执行后续处理以完成金属氧化物电阻式切换存储器。 根据本公开，可以简化制造过程，而不在标准方法中引入额外的暴露步骤，导致诸如降低成本的优点。

公开(公告)号：US08642989B2

公开(公告)日：2014-02-04

申请号：US13512797

申请日：2011-10-13

申请人： Qi Liu ,  Ming Liu ,  Shibing Long ,  Hangbing Lv

发明人： Qi Liu ,  Ming Liu ,  Shibing Long ,  Hangbing Lv

IPC分类号： H01L45/00

CPC分类号： H01L45/14 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/003 ,  G11C2213/75 ,  G11C2213/77 ,  H01L27/2409 ,  H01L45/04 ,  H01L45/1253

摘要： A Resistive Random Access Memory (RRAM) cell and a memory are disclosed. In one embodiment, the RRAM cell comprises a two-state resistor and a resistive switching memory cell connected in series. The two-state resistor can supply relatively large currents under both positive and negative voltage polarities. As a result, it is possible to reduce leakage paths in a crossbar array of memory cells, and thus to suppress reading crosstalk.

摘要翻译： 公开了电阻随机存取存储器（RRAM）单元和存储器。 在一个实施例中，RRAM单元包括串联连接的双态电阻器和电阻式开关存储器单元。 双态电阻器可以在正极和负极极性下提供相对较大的电流。 结果，可以减少存储单元的交叉开关阵列中的泄漏路径，从而抑制读取串扰。

公开(公告)号：US20130119341A1

公开(公告)日：2013-05-16

申请号：US13512797

申请日：2011-10-13

申请人： Qi Liu ,  Ming Liu ,  Shibing Long ,  Hangbing Lv

发明人： Qi Liu ,  Ming Liu ,  Shibing Long ,  Hangbing Lv

IPC分类号： H01L45/00

CPC分类号： H01L45/14 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/003 ,  G11C2213/75 ,  G11C2213/77 ,  H01L27/2409 ,  H01L45/04 ,  H01L45/1253

摘要： A Resistive Random Access Memory (RRAM) cell and a memory are disclosed. In one embodiment, the RRAM cell comprises a two-state resistor and a resistive switching memory cell connected in series. The two-state resistor can supply relatively large currents under both positive and negative voltage polarities. As a result, it is possible to reduce leakage paths in a crossbar array of memory cells, and thus to suppress reading crosstalk.

摘要翻译： 公开了电阻随机存取存储器（RRAM）单元和存储器。 在一个实施例中，RRAM单元包括串联连接的双态电阻器和电阻式开关存储器单元。 双态电阻器可以在正极和负极极性下提供相对较大的电流。 结果，可以减少存储单元的交叉开关阵列中的泄漏路径，从而抑制读取串扰。