摘要:
A polishing apparatus includes a belt-type surface plate stretched between two rollers each having a rotation shaft arranged in parallel to that of the other roller, a plurality of sheet-type polishing pads stuck on the surface plate, and a dresser for activating the polishing pads. Part of an upper end portion of each of the polishing pads facing an adjacent one of the polishing pads has an obtuse angle. Thus, the dresser is not caught by the upper end portion of each of the polishing pads, so that the generation of a scratch in the polishing pads. Therefore, a semiconductor wafer can be polished without causing a scratch thereon.
摘要:
A semiconductor wafer is wetted with slurry by injecting the slurry into at least one channel which is provided in a wear ring, while the wear ring is holding the wafer and is pressed against a polishing pad. Preferably, the channel in the wear ring includes a plurality of outlets, and the outlets provide that the slurry can exit the wear ring and contact the polishing pad. Providing that the wear ring includes at least one channel and that slurry is injected into the channel during the polishing process provides that slurry is introduced between the wear ring and the polishing pad and this greatly increases the amount of slurry getting to the wafer.
摘要:
Disclosed is a CMP slurry comprising a first colloidal particle having a primary particle diameter ranging from 5 nm to 30 nm and an average particle diameter of d1, the first colloidal particle being incorporated in an amount of w1 by weight and a second colloidal particle having a primary particle diameter larger than that of the first colloidal particle and an average particle diameter of d2, the second colloidal particle being formed of the same material as that of the first colloidal particle and incorporated in an amount of w2 by weight, wherein d1, d2, w1 and w2 are selected to concurrently meet following conditions (A) and (B) excluding situations where d1, d2, w1 and w2 concurrently meet following conditions (C) and (D):3nulld2/d1null8nullnull(A)0.7nullw1/(w1nullw2)null0.97nullnull(B)3nulld2/d1null5nullnull(C)0.7
摘要:
The invention is directed to a multi-layer polishing pad for chemical-mechanical polishing comprising a polishing layer and a bottom layer, wherein the polishing layer and bottom layer are joined together without the use of an adhesive. The invention is also directed to a polishing pad comprising an optically transmissive multi-layer polishing pad material, wherein the layers of the polishing pad material are joined together without the use of an adhesive.
摘要:
The invention provides a polishing pad comprising a body having a top surface comprising a first set of grooves with a first depth and first width and a bottom surface comprising a second set of grooves with a second depth and second width, wherein the first set of grooves and second set of grooves are interconnected and are oriented such that they are not aligned.
摘要:
A gear arrangement includes a first section having a first plurality of teeth and at least a portion of the first section is made of a compliant material. There is also a second section having a second plurality of teeth. The second section is made of a stiff material. The first section is arranged axially adjacent to the second section and each of the first plurality of teeth has a tooth flank that changes axially across the tooth flank. A method for manufacturing a gear arrangement includes fabricating a first gear, which includes a first plurality of teeth, and a bearing from a compliant material. The method also includes mounting a second gear, which includes a second plurality of teeth, to the bearing, aligning the first plurality of teeth with the second plurality of teeth, and coupling the first gear with the second gear.
摘要:
Material is removed from objects to be marked or machined by applying tools having cutouts arranged in a pattern on the objects, filling the cutouts with abrasive particles, pouring a molten metal over the tools to solidify as a backing, and then ultrasonically vibrating the backing to propel the abrasive particles through the cutouts to transfer the pattern to the objects.
摘要:
Provided is a polishing pad for a chemical mechanical polishing (CMP) apparatus, having a sealing barrier which prevents fluid leakage and moisture accumulation on a window. The polishing pad comprises an upper pad having polishing surface in contact with a wafer, a bottom pad an upper face of which is attached to a lower face of the upper pad and a lower face of which is attached to an upper face of a platen of the CMP apparatus, an aperture through the bottom pad and the upper pad, a transparent window fitted in the aperture in the upper pad, and a sealing barrier, placed between the aperture and an external face of the bottom pad in contact with a fluid, to prevent fluid leakage and accumulation of moisture derived from fluid fed on the polishing surface through the bottom pad.
摘要:
The thickness of a layer on a substrate is measured in-situ during chemical mechanical polishing. A light beam is divided through a window in a polishing pad, and the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate surface. An interference signal produced by the light beam reflecting off the substrate is monitored, and a plurality of intensity measurements are extracted from the interference signal. Each intensity measurement corresponds to a sampling zone in the path across the substrate surface. A radial position is determined for each sampling zone, and the intensity measurements are divided into a plurality of radial ranges according to the radial positions. The layer thickness is computed for each radial range from the intensity measurements associated with that radial range.
摘要:
A method and apparatus for utilizing an optimized polishing pad to increase planarity and reduce defects in CMP processing. The optimized polishing pad includes a polishing surface to remove material from and maintain a uniform polish rate with respect to a wafer surface. The polishing pad has a hardness between 62 and 98 shore A and a tensile modulus between 3,500 and 35,000 psi. A three-stage CMP process utilizes a hard pad, a first optimized pad and a second optimized pad to increase planarity while reducing surface defects.