Polishing pad, polishing apparatus and method for polishing wafer
    1.
    发明申请
    Polishing pad, polishing apparatus and method for polishing wafer 审中-公开
    抛光垫,抛光装置和抛光晶圆的方法

    公开(公告)号:US20040266322A1

    公开(公告)日:2004-12-30

    申请号:US10834111

    申请日:2004-04-29

    IPC分类号: B24B001/00 B24B007/19

    摘要: A polishing apparatus includes a belt-type surface plate stretched between two rollers each having a rotation shaft arranged in parallel to that of the other roller, a plurality of sheet-type polishing pads stuck on the surface plate, and a dresser for activating the polishing pads. Part of an upper end portion of each of the polishing pads facing an adjacent one of the polishing pads has an obtuse angle. Thus, the dresser is not caught by the upper end portion of each of the polishing pads, so that the generation of a scratch in the polishing pads. Therefore, a semiconductor wafer can be polished without causing a scratch thereon.

    摘要翻译: 抛光装置包括在两个辊之间拉伸的带状表面板,每个辊具有平行于另一个辊的旋转轴,粘附在表面板上的多个片状抛光垫和用于激活抛光的修整器 垫 每个抛光垫的面向相邻的一个抛光垫的上端部分的一部分具有钝角。 因此,修整器不被每个抛光垫的上端部分捕获,从而在抛光垫中产生划痕。 因此,半导体晶片可以被抛光而不会在其上产生划痕。

    Method and apparatus to add slurry to a polishing system
    2.
    发明申请
    Method and apparatus to add slurry to a polishing system 失效
    将浆料添加到抛光系统的方法和设备

    公开(公告)号:US20040266321A1

    公开(公告)日:2004-12-30

    申请号:US10607116

    申请日:2003-06-26

    发明人: Michael J. Berman

    IPC分类号: B24B001/00

    CPC分类号: B24B37/32 B24B57/02

    摘要: A semiconductor wafer is wetted with slurry by injecting the slurry into at least one channel which is provided in a wear ring, while the wear ring is holding the wafer and is pressed against a polishing pad. Preferably, the channel in the wear ring includes a plurality of outlets, and the outlets provide that the slurry can exit the wear ring and contact the polishing pad. Providing that the wear ring includes at least one channel and that slurry is injected into the channel during the polishing process provides that slurry is introduced between the wear ring and the polishing pad and this greatly increases the amount of slurry getting to the wafer.

    摘要翻译: 通过将浆料注入到设置在耐磨环中的至少一个通道中,同时耐磨环保持晶片并且被压靠在抛光垫上,将半导体晶片浸入浆料中。 优选地,磨损环中的通道包括多个出口,并且出口提供浆料可以离开耐磨环并接触抛光垫。 提供磨损环包括至少一个通道,并且在抛光过程中将浆料注入通道中,使得浆料被引入磨损环和抛光垫之间,并且这大大增加了浆料进入晶片的量。

    Slurry for CMP, polishing method and method of manufacturing semiconductor device
    3.
    发明申请
    Slurry for CMP, polishing method and method of manufacturing semiconductor device 有权
    用于CMP的浆料,抛光方法和制造半导体器件的方法

    公开(公告)号:US20040261323A1

    公开(公告)日:2004-12-30

    申请号:US10838261

    申请日:2004-05-05

    IPC分类号: B24B001/00 C09C001/68

    CPC分类号: H01L21/3212 C09G1/02

    摘要: Disclosed is a CMP slurry comprising a first colloidal particle having a primary particle diameter ranging from 5 nm to 30 nm and an average particle diameter of d1, the first colloidal particle being incorporated in an amount of w1 by weight and a second colloidal particle having a primary particle diameter larger than that of the first colloidal particle and an average particle diameter of d2, the second colloidal particle being formed of the same material as that of the first colloidal particle and incorporated in an amount of w2 by weight, wherein d1, d2, w1 and w2 are selected to concurrently meet following conditions (A) and (B) excluding situations where d1, d2, w1 and w2 concurrently meet following conditions (C) and (D):3nulld2/d1null8nullnull(A)0.7nullw1/(w1nullw2)null0.97nullnull(B)3nulld2/d1null5nullnull(C)0.7

    摘要翻译: 公开了一种CMP浆料,其包含一次粒径为5nm〜30nm,平均粒径为d1的第一胶体粒子,第一胶体粒子的重量为w1,第二胶体粒子具有 一次粒径大于第一胶体粒子的粒径,平均粒径为d2,第二胶体粒子由与第一胶体粒子相同的材料形成,w 2的重量比为d 2,d2 选择w1和w2同时满足以下条件(A)和(B),不包括d1,d2,w1和w2同时满足以下条件(C)和(D)的情况:3 <= d2 / d1 <= 8 A)0.7 <= w1 /(w1 + w2)<= 0.97(B)3 <= d2 / d1 <= 5(C)0.7

    Multi-layer polishing pad material for CMP
    4.
    发明申请
    Multi-layer polishing pad material for CMP 有权
    CMP多层抛光垫材料

    公开(公告)号:US20040259484A1

    公开(公告)日:2004-12-23

    申请号:US10463680

    申请日:2003-06-17

    IPC分类号: B24B001/00

    CPC分类号: B24B37/205 B24D3/32

    摘要: The invention is directed to a multi-layer polishing pad for chemical-mechanical polishing comprising a polishing layer and a bottom layer, wherein the polishing layer and bottom layer are joined together without the use of an adhesive. The invention is also directed to a polishing pad comprising an optically transmissive multi-layer polishing pad material, wherein the layers of the polishing pad material are joined together without the use of an adhesive.

    摘要翻译: 本发明涉及一种用于化学机械抛光的多层抛光垫,其包括抛光层和底层,其中抛光层和底层在不使用粘合剂的情况下连接在一起。 本发明还涉及一种包括光学透射多层抛光垫材料的抛光垫,其中抛光垫材料的层在不使用粘合剂的情况下连接在一起。

    Polishing pad for electrochemical-mechanical polishing
    5.
    发明申请
    Polishing pad for electrochemical-mechanical polishing 审中-公开
    抛光垫用于电化学机械抛光

    公开(公告)号:US20040259479A1

    公开(公告)日:2004-12-23

    申请号:US10601601

    申请日:2003-06-23

    发明人: Roland K. Sevilla

    IPC分类号: B24B001/00

    CPC分类号: B24B37/26 B23H5/08 B24B37/046

    摘要: The invention provides a polishing pad comprising a body having a top surface comprising a first set of grooves with a first depth and first width and a bottom surface comprising a second set of grooves with a second depth and second width, wherein the first set of grooves and second set of grooves are interconnected and are oriented such that they are not aligned.

    摘要翻译: 本发明提供了一种抛光垫,其包括具有顶表面的主体,该顶表面包括具有第一深度和第一宽度的第一组凹槽,以及包括具有第二深度和第二宽度的第二组凹槽的底表面,其中第一组凹槽 并且第二组凹槽互连并且被定向成使得它们不对齐。

    Double flank delash gear mechanism
    6.
    发明申请
    Double flank delash gear mechanism 有权
    双面脱齿机构

    公开(公告)号:US20040253912A1

    公开(公告)日:2004-12-16

    申请号:US10868612

    申请日:2004-06-15

    IPC分类号: B24B001/00

    摘要: A gear arrangement includes a first section having a first plurality of teeth and at least a portion of the first section is made of a compliant material. There is also a second section having a second plurality of teeth. The second section is made of a stiff material. The first section is arranged axially adjacent to the second section and each of the first plurality of teeth has a tooth flank that changes axially across the tooth flank. A method for manufacturing a gear arrangement includes fabricating a first gear, which includes a first plurality of teeth, and a bearing from a compliant material. The method also includes mounting a second gear, which includes a second plurality of teeth, to the bearing, aligning the first plurality of teeth with the second plurality of teeth, and coupling the first gear with the second gear.

    摘要翻译: 齿轮装置包括具有第一多个齿的第一部分,并且第一部分的至少一部分由顺应性材料制成。 还有具有第二多个齿的第二部分。 第二部分由坚硬的材料制成。 第一部分轴向地布置在第二部分附近,并且第一多个齿中的每个齿具有跨越齿面轴向变化的齿面。 一种用于制造齿轮装置的方法包括制造包括第一多个齿的第一齿轮和来自顺应性材料的轴承。 该方法还包括将包括第二多个齿的第二齿轮安装到轴承上,使第一多个齿与第二多个齿对准,以及将第一齿轮与第二齿轮联接。

    Vibratory material removal system, tool and method
    7.
    发明申请
    Vibratory material removal system, tool and method 失效
    振动材料去除系统,工具和方法

    公开(公告)号:US20040248503A1

    公开(公告)日:2004-12-09

    申请号:US10457303

    申请日:2003-06-09

    发明人: David Benderly

    IPC分类号: B24B001/00

    CPC分类号: B24B1/04 B24B9/165 Y10S451/91

    摘要: Material is removed from objects to be marked or machined by applying tools having cutouts arranged in a pattern on the objects, filling the cutouts with abrasive particles, pouring a molten metal over the tools to solidify as a backing, and then ultrasonically vibrating the backing to propel the abrasive particles through the cutouts to transfer the pattern to the objects.

    摘要翻译: 通过将具有以图案布置在物体上的切口的工具从具有标记或加工的物体中取出材料,用磨料颗粒填充切口,将熔融金属浇注在工具上以固化为背衬,然后将背衬超声振动 通过切口推动磨料颗粒将图案转移到物体上。

    Polishing pad for chemical mechanical polishing apparatus
    8.
    发明申请
    Polishing pad for chemical mechanical polishing apparatus 失效
    化学机械抛光设备抛光垫

    公开(公告)号:US20040248501A1

    公开(公告)日:2004-12-09

    申请号:US10861254

    申请日:2004-06-03

    CPC分类号: B24B37/205

    摘要: Provided is a polishing pad for a chemical mechanical polishing (CMP) apparatus, having a sealing barrier which prevents fluid leakage and moisture accumulation on a window. The polishing pad comprises an upper pad having polishing surface in contact with a wafer, a bottom pad an upper face of which is attached to a lower face of the upper pad and a lower face of which is attached to an upper face of a platen of the CMP apparatus, an aperture through the bottom pad and the upper pad, a transparent window fitted in the aperture in the upper pad, and a sealing barrier, placed between the aperture and an external face of the bottom pad in contact with a fluid, to prevent fluid leakage and accumulation of moisture derived from fluid fed on the polishing surface through the bottom pad.

    摘要翻译: 本发明提供一种用于化学机械抛光(CMP)装置的抛光垫,其具有防止液体泄漏和水分积聚在窗户上的密封屏障。 抛光垫包括具有与晶片接触的抛光表面的上焊盘,底垫,其上表面附接到上焊盘的下表面,其下表面附接到压板的上表面 CMP装置,通过底垫和上垫的孔,安装在上垫中的孔中的透明窗和密封屏障,放置在孔与底部垫的与流体接触的外表面之间, 以防止流体通过底部衬垫泄漏和积聚来自在抛光表面上供给的流体的水分。

    Method for monitoring a substrate during chemical mechanical polishing
    9.
    发明申请
    Method for monitoring a substrate during chemical mechanical polishing 有权
    在化学机械抛光期间监测基板的方法

    公开(公告)号:US20040242123A1

    公开(公告)日:2004-12-02

    申请号:US10869719

    申请日:2004-06-15

    摘要: The thickness of a layer on a substrate is measured in-situ during chemical mechanical polishing. A light beam is divided through a window in a polishing pad, and the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate surface. An interference signal produced by the light beam reflecting off the substrate is monitored, and a plurality of intensity measurements are extracted from the interference signal. Each intensity measurement corresponds to a sampling zone in the path across the substrate surface. A radial position is determined for each sampling zone, and the intensity measurements are divided into a plurality of radial ranges according to the radial positions. The layer thickness is computed for each radial range from the intensity measurements associated with that radial range.

    摘要翻译: 在化学机械抛光期间原位测量基底上的层的厚度。 光束通过抛光垫中的窗口分割,并且抛光垫相对于基板的运动导致光束在穿过基板表面的路径中移动。 监测由反射离开衬底的光束产生的干涉信号,并且从干扰信号中提取多个强度测量值。 每个强度测量对应于穿过衬底表面的路径中的采样区域。 对于每个采样区域确定径向位置,并且根据径向位置将强度测量值分成多个径向范围。 从与该径向范围相关联的强度测量的每个径向范围计算层厚度。

    Chemical mechanical planarization method and apparatus for improved process uniformity, reduced topography and reduced defects
    10.
    发明申请
    Chemical mechanical planarization method and apparatus for improved process uniformity, reduced topography and reduced defects 审中-公开
    化学机械平面化方法和设备,用于改善工艺均匀性,减少地形和减少缺陷

    公开(公告)号:US20040235398A1

    公开(公告)日:2004-11-25

    申请号:US10843265

    申请日:2004-05-10

    IPC分类号: B24B001/00

    摘要: A method and apparatus for utilizing an optimized polishing pad to increase planarity and reduce defects in CMP processing. The optimized polishing pad includes a polishing surface to remove material from and maintain a uniform polish rate with respect to a wafer surface. The polishing pad has a hardness between 62 and 98 shore A and a tensile modulus between 3,500 and 35,000 psi. A three-stage CMP process utilizes a hard pad, a first optimized pad and a second optimized pad to increase planarity while reducing surface defects.

    摘要翻译: 一种利用优化的抛光垫来增加平面度并减少CMP处理中的缺陷的方法和装置。 优化的抛光垫包括抛光表面以相对于晶片表面去除材料并保持均匀的抛光速率。 抛光垫具有在62和98肖氏A之间的硬度,以及在3,500和35,000psi之间的拉伸模量。 三级CMP工艺利用硬焊盘,第一优化焊盘和第二优化焊盘来增加平面度,同时减少表面缺陷。