CHIP COMPONENT AND CHIP COMPONENT PRODUCTION METHOD

    公开(公告)号:US20240153678A1

    公开(公告)日:2024-05-09

    申请号:US17769311

    申请日:2020-09-24

    Abstract: A chip component 10 comprises: an insulating substrate 1 on which a resistor 3 serving as a functional element is formed; a pair of internal electrodes (front electrodes 2, end surface electrodes 6, and back electrodes 5) that is formed to cover both end portions of the insulating substrate 1 and connected to the resistor 3; a barrier layer 8 that is formed on a surface of each of the internal electrodes and mainly composed of nickel; and an external connection layer 9 that is formed on a surface of the barrier layer 8 and mainly composed of tin, and the barrier layer 8 is composed of alloy plating (Ni—P) including nickel and phosphorus, which is formed by electrolytic plating, and a content rate of phosphorus in the alloy plating of an inner region is made different from that of an outer region so that at least the inner region of the barrier layer 8 has magnetic properties.

    Sulfurization detection resistor and manufacturing method therefor

    公开(公告)号:US11940401B2

    公开(公告)日:2024-03-26

    申请号:US17418000

    申请日:2019-12-24

    CPC classification number: G01N27/041 H01C17/22 H01C17/28 H01C7/00

    Abstract: A sulfurization detection resistor makes it possible to detect a degree of sulfurization accurately and easily, and a manufacturing method for such sulfurization detection resistor. A sulfurization detection resistor includes an insulated substrate having a rectangular parallelepiped shape, a first front electrode and a second front electrode formed at both ends on a main surface of the insulated substrate, multiple sulfurization detecting conductors connected in parallel to the first front electrode, multiple resistive elements connected between the sulfurization detecting conductors and the second front electrode, and a protective film formed to partially cover the sulfurization detecting conductors and entirely cover the resistive elements. The sulfurization detecting conductors have their sulfurization detecting portions exposed out of the protective film, and different timings are set for these sulfurization detecting portions respectively to become disconnected depending on a cumulative amount of sulfurization.

    SENSOR DEVICE
    94.
    发明公开
    SENSOR DEVICE 审中-公开

    公开(公告)号:US20240077347A1

    公开(公告)日:2024-03-07

    申请号:US18272660

    申请日:2022-01-20

    CPC classification number: G01F1/69 G01F1/6965

    Abstract: An object is to provide a sensor device capable of highly accurately detecting a flow rate at 360 degrees in a radial direction with respect to a first sensor element including a resistive element for flow rate detection. A sensor device according to the present invention includes a substrate, a first sensor element including a resistive element for flow rate detection, and a second sensor element including a resistive element for temperature compensation. Each of the first sensor element and the second sensor element is supported to be separated from a surface of the substrate via a pair of lead wires, and the first sensor element is disposed at a higher position than the second sensor element.

    Current detection resistor
    95.
    发明授权

    公开(公告)号:US11842830B2

    公开(公告)日:2023-12-12

    申请号:US17602120

    申请日:2020-03-03

    CPC classification number: H01C7/13 G01R15/144 G01R15/146 G01R19/0023 H01C1/144

    Abstract: A shunt resistor 10, 110 includes a flat resistive element 11; a first electrode block 12 that is made of a conductive metal material and is laminated on a lower surface 11a of the resistive element 11; and a second electrode block 13, 113 that is made of a conductive metal material and is laminated on an upper surface 11b of the resistive element 11, in which the second electrode block 13, 113 is a block body including an electrode portion 14 connected to the resistive element 11 and an extension portion 15, 115 extending downward from a side surface of the electrode portion 14.

    GAS SENSOR
    96.
    发明公开
    GAS SENSOR 审中-公开

    公开(公告)号:US20230349851A1

    公开(公告)日:2023-11-02

    申请号:US18206816

    申请日:2023-06-07

    CPC classification number: G01N27/125 B28B1/30 B28B1/48 G01N33/0036

    Abstract: A sensor element (12) has a cross-sectional area that continuously only increases from a positive (+) electrode side toward a negative (−) electrode side, thereby leading a hot spot, which attempts to move to the negative electrode side, to a lower resistance side. A position that is at nearly equal distances from paired electrodes (13 and 15) formed on either end of the sensor element (12) is set as a hot spot generating position, so as to avoid damage to the electrodes due to heat emitted by the hot spot.

    Chip resistor and method for manufacturing chip resistor

    公开(公告)号:US11798714B2

    公开(公告)日:2023-10-24

    申请号:US17828276

    申请日:2022-05-31

    Inventor: Naoto Oka

    CPC classification number: H01C17/006 H01C1/142 H01C7/003

    Abstract: Resistive elements are formed in belt shape in regions sandwiched between secondary division prediction lines set onto a large substrate and extending in a direction orthogonal to primary division prediction lines, a plurality of front electrodes disposed facing each other at predetermined intervals on the resistive elements are formed so as to be across the primary division prediction lines, a glass coat layer covering each of the resistive elements and extending in the direction orthogonal to the secondary division prediction lines is formed, a resin coat layer covering an entire surface of the large substrate from a top of the glass coat layer is formed, and after that, the large substrate is diced along the primary division prediction lines and the secondary division prediction lines to obtain individual chip base bodies.

    Chip component
    98.
    发明授权

    公开(公告)号:US11657932B2

    公开(公告)日:2023-05-23

    申请号:US17752200

    申请日:2022-05-24

    Inventor: Naoto Oka

    CPC classification number: H01C7/003 H01C1/142

    Abstract: A chip resistor including: a rectangular parallelepiped insulating substrate; a strip-shaped resistor; a pair of front electrodes formed on a front surface of the resistor at both ends in the longitudinal direction; an insulating protective layer; and a pair of end face electrodes formed at both ends of the insulating substrate in the longitudinal direction, each of which is connected to each end face of the resistor, corresponding one of the front electrodes, and protective film; and a pair of external electrodes, wherein a cross-sectional shape of each of the front electrodes is almost a triangle in which a side of the end face has a maximum height, and a shape of an end face of each of the end face electrodes is almost a square.

    MANUFACTURING METHOD OF RESISTOR AND RESISTOR

    公开(公告)号:US20230146171A1

    公开(公告)日:2023-05-11

    申请号:US17759487

    申请日:2020-12-25

    CPC classification number: H01C1/14 H01C17/006

    Abstract: A manufacturing method of a resistor contains: a step of forming a resistor base material by stacking an electrode material, a resistive material, and an electrode material in this order and by bonding the electrode material, the resistive material, and the electrode material by applying pressure in the stacked direction; a step of passing the resistor base material through a die, the die being formed with an opening portion having a dimension smaller than an outer dimension of the resistor base material; and a step of obtaining an individual resistor from the resistor base material passed through the die.

    CHIP RESISTOR AND METHOD OF MANUFACTURING CHIP RESISTOR

    公开(公告)号:US20230133764A1

    公开(公告)日:2023-05-04

    申请号:US17959641

    申请日:2022-10-04

    Inventor: Taro KIMURA

    Abstract: A chip resistor includes: an insulating substrate; a pair of front electrodes; a resistor connecting between both the front electrodes; an undercoat layer provided on the resistor; an overcoat layer provided on the undercoat layer, an auxiliary film provided so as to be over a connecting portion between the front electrode and the resistor at a position away from an end face of the insulating substrate; a pair of end face electrodes; and a pair of external plating layers covering the end face electrodes, the front electrodes, and the auxiliary film, wherein the auxiliary film is formed of a resin material containing metal particles, and a portion of the auxiliary film is sandwiched between the undercoat layer and the overcoat layer.

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