中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

193 records (took 0.047 seconds)

    Semiconductor memory device and method for reducing cell activation during write operations
    94.
    发明授权
    Semiconductor memory device and method for reducing cell activation during write operations 有权
    用于在写入操作期间减少电池激活的半导体存储器件和方法

    公开(公告)号：US07542356B2

    公开(公告)日：2009-06-02

    申请号：US11790146

    申请日：2007-04-24

    Applicant: Kwang-Jin Lee ,  Sang-Beom Kang ,  Hyung-Rok Oh ,  Beak-Hyung Cho ,  Woo-Yeong Cho

    Inventor： Kwang-Jin Lee ,  Sang-Beom Kang ,  Hyung-Rok Oh ,  Beak-Hyung Cho ,  Woo-Yeong Cho

    IPC: G11C7/06

    CPC classification number: G11C13/0069 ,  G11C7/06 ,  G11C7/1006 ,  G11C13/0004 ,  G11C2013/0076 ,  G11C2211/5647

    Abstract: Embodiments of the invention provide devices or methods that include a status bit representing an inversion of stored data. New data is written to selected cells, the new data is selectively inverted, and the status bit is selectively toggled, based on a comparison between pre-existing data and new data associated with a write command. A benefit of embodiments of the invention is that fewer memory cells must be activated in many instances (when compared to conventional art approaches). Moreover, embodiments of the invention may also reduce the average amount of activation current required to write to variable resistive memory devices and other memory device types.

    Abstract translation: 本发明的实施例提供了包括表示存储数据的反转的状态位的设备或方法。 将新数据写入所选择的单元，根据预先存在的数据与与写命令相关联的新数据之间的比较，选择性地反转新数据并选择性地切换状态位。 本发明的实施例的优点在于，在许多情况下（与传统技术方法相比），必须激活更少的存储器单元。 此外，本发明的实施例还可以减少写入可变电阻存储器件和其他存储器件类型所需的平均激活电流量。

    Impact-reinforcing agent having multilayered structure, method for preparing the same, and thermoplastic resin comprising the same
    95.
    发明授权
    Impact-reinforcing agent having multilayered structure, method for preparing the same, and thermoplastic resin comprising the same 有权
    具有多层结构的冲击强化剂，其制备方法和包含该冲击增强剂的热塑性树脂

    公开(公告)号：US07534832B2

    公开(公告)日：2009-05-19

    申请号：US10505517

    申请日：2002-12-26

    Applicant: Jeongheon Ahn ,  Seon-Hee Han ,  Kwang-Jin Lee

    Inventor： Jeongheon Ahn ,  Seon-Hee Han ,  Kwang-Jin Lee

    IPC: C08L53/00

    CPC classification number: C08L55/02 ,  C08F257/02 ,  C08F265/04 ,  C08F265/06 ,  C08F265/08 ,  C08F285/00 ,  C08L27/06 ,  C08L51/003 ,  C08L51/04 ,  C08L67/02 ,  C08L69/00 ,  C08L2666/24 ,  C08L2666/02 ,  C08L2666/14 ,  C08L2666/04

    Abstract: The present invention relates to an acrylic impact modifier having a multilayered structure, which offers both superior impact resistance and coloring characteristics to engineering plastics, such as polycarbonate (PC) and a polycarbonate/polybutylene terephthalate alloy resin, or to a polyvinyl chloride resin. The present invention provides an acrylic impact modifier having a multilayered structure comprising: a) a seed prepared by emulsion copolymerization of a vinylic monomer and a hydrophilic monomer; b) a rubbery core surrounding the seed and comprising a C2 to C8 alkyl acrylate polymer, and c) a shell surrounding the rubbery core and comprising a C1, to C4 alkyl methacrylate polymer, a method for preparing the same, and a thermoplastic resin comprising the same.

    Abstract translation: 本发明涉及一种具有多层结构的丙烯酸类抗冲击改性剂，其对工程塑料如聚碳酸酯（PC）和聚碳酸酯/聚对苯二甲酸丁二醇酯合成树脂或聚氯乙烯树脂具有优异的抗冲击性和着色特性。 本发明提供具有多层结构的丙烯酸类抗冲改性剂，其包含：a）通过乙烯基单体和亲水单体的乳液共聚制备的种子; b）包围种子并包含C 2至C 8烷基丙烯酸酯聚合物的橡胶芯，和c）包围橡胶芯并包含甲基丙烯酸C1-C4烷基酯聚合物的壳，其制备方法和包含 一样。

    Method Of Manufacturing For Aromatic Polyamide Composite Membrane
    98.
    发明申请
    Method Of Manufacturing For Aromatic Polyamide Composite Membrane 审中-公开
    芳香族聚酰胺复合膜的制造方法

    公开(公告)号：US20080199619A1

    公开(公告)日：2008-08-21

    申请号：US12063070

    申请日：2006-08-08

    Applicant: Jae Hee Ryu ,  Sung Hak Choi ,  Kwang Jin Lee

    Inventor： Jae Hee Ryu ,  Sung Hak Choi ,  Kwang Jin Lee

    IPC: B05D3/10

    CPC classification number: C08J5/2275 ,  C08J2300/202

    Abstract: The present invention provides a method of manufacturing an aromatic polyamide composite membrane comprising: coating an aqueous solution containing polyfunctional aromatic amine to a porous polymer substrate; and reacting the coated substrate with an organic solution containing polyfunctional aromatic acyl halide to lead to interfacial condensation polymerization between the polyfunctional aromatic amine and the polyfunctional aromatic acyl halide so that the reaction product resulting from the interfacial condensation polymerization is coated on the surface of the substrate, characterized in that either of the aqueous solution containing polyfunctional aromatic amine or the organic solution containing polyfunctional aromatic acyl halide has dendritic polymer as one of polyfunctional compounds added thereto. The resulting aromatic polyamide composite membrane which includes dendrimer as polyfunctional compound, exhibits high salt rejection rate and water flux.

    Abstract translation: 本发明提供了一种制备芳族聚酰胺复合膜的方法，包括：将多官能芳族胺的水溶液涂布到多孔聚合物基材上; 并使涂覆的基材与含有多官能芳族酰卤的有机溶液反应，导致多官能芳族胺和多官能芳族酰卤之间的界面缩聚，从而将界面缩聚产生的反应产物涂覆在基材表面上 其特征在于，含有多官能芳香族胺的水溶液或含有多官能芳香族酰卤的有机溶液中的任一种都具有树枝状聚合物作为添加多官能化合物之一。 得到的芳香族聚酰胺复合膜，其包含作为多官能化合物的树枝状大分子，显示出高的脱盐率和水通量。

    Memory system and resistive memory device including buffer memory for reduced overhead
    99.
    发明申请
    Memory system and resistive memory device including buffer memory for reduced overhead 审中-公开
    存储器系统和电阻式存储器件包括用于减少开销的缓冲存储器

    公开(公告)号：US20080123391A1

    公开(公告)日：2008-05-29

    申请号：US11901438

    申请日：2007-09-17

    Applicant: Woo-Yeong Cho ,  Du-Eung Kim ,  Kwang-Jin Lee

    Inventor： Woo-Yeong Cho ,  Du-Eung Kim ,  Kwang-Jin Lee

    IPC: G11C11/00 ,  G11C7/00 ,  G11C8/00

    CPC classification number: G11C7/22 ,  G11C7/1051 ,  G11C7/1069 ,  G11C7/1078 ,  G11C7/1087 ,  G11C11/005 ,  G11C13/0004

    Abstract: A resistive memory device includes a memory core unit and a buffer memory for reducing overhead of a memory controller in a memory system. The buffer memory stores input data associated with a write command. The memory core unit includes resistive memory cells for storing the input data from the buffer memory. The buffer memory is comprised of a different type of memory cells from the resistive memory cells such that the different type of memory cells writes the input data with a faster speed than the resistive memory cells.

    Abstract translation: 电阻式存储器件包括存储器核心单元和用于减少存储器系统中存储器控制器的开销的缓冲存储器。 缓冲存储器存储与写命令相关联的输入数据。 存储器核心单元包括用于存储来自缓冲存储器的输入数据的电阻存储器单元。 缓冲存储器由来自电阻式存储器单元的不同类型的存储器单元组成，使得不同类型的存储单元以比电阻存储器单元更快的速度写入输入数据。

Patent Agency Ranking