公开(公告)号：US12176183B2

公开(公告)日：2024-12-24

申请号：US18486220

申请日：2023-10-13

Applicant: Tokyo Electron Limited

Inventor： Barton Lane ,  Merritt Funk ,  Yohei Yamazawa ,  Justin Moses ,  Chelsea DuBose ,  Michael Hummel

IPC: H01J37/32 ,  G01R29/08

Abstract: A radio frequency sensor assembly includes a sensor casing disposed around a central hole, the sensor casing including a first conductive cover and a second conductive cover. The assembly includes a cavity disposed around the central hole and includes a dielectric material, the cavity being bounded by a first major outer surface and a second major outer surface along a radial direction from a center of the central hole, where the first conductive cover is electrically coupled to the second conductive cover through a coupling region beyond the second major outer surface of the cavity, and electrically insulated from the second conductive cover by the cavity and the central hole. The assembly includes a current sensor electrically insulated from the sensor casing and including a current pickup disposed symmetrically around the central hole, the current pickup being disposed within the cavity and being insulated from the sensor casing.

公开(公告)号：US12173405B2

公开(公告)日：2024-12-24

申请号：US17472891

申请日：2021-09-13

Applicant: Tokyo Electron Limited

Inventor： Hiroki Iriuda ,  Yoichiro Chiba ,  Atsushi Endo

IPC: C23C16/455 ,  C23C16/52

Abstract: A processing apparatus includes: a processing container having a substantially cylindrical shape and provided with an exhaust slit on a side wall; and a plurality of gas nozzles extending in a vertical direction along an inside of the side wall of the processing container, disposed symmetrically with respect to a straight line connecting a center of the processing container and a center of the exhaust slit, and each configured to eject a same processing gas into the processing container.

公开(公告)号：US12172198B2

公开(公告)日：2024-12-24

申请号：US17585274

申请日：2022-01-26

Applicant: TOKYO ELECTRON LIMITED ,  IWATANI CORPORATION

Inventor： Kazuya Dobashi ,  Takehiko Orii ,  Yukimasa Saito ,  Kunihiko Koike ,  Takehiko Senoo ,  Koichi Izumi ,  Yu Yoshino ,  Tadashi Shojo ,  Keita Kanehira

IPC: B08B5/02 ,  B08B7/00 ,  H01L21/67 ,  H01L21/02

Abstract: There is provided a gas cluster processing device for performing a predetermined process on a workpiece by irradiating the workpiece with a gas cluster, including: a processing container in which the workpiece is disposed; a gas supply part configured to supply a gas for generating the gas cluster; a flow rate controller configured to control a flow rate of the gas supplied from the gas supply part; a cluster nozzle configured to receive the gas for generating the gas cluster at a predetermined supply pressure, spray the gas into the processing container maintained in a vacuum state, and convert the gas into the gas cluster through an adiabatic expansion; and a pressure control part provided in a pipe between the flow rate controller and the cluster nozzle and including a back pressure controller configured to control a supply pressure of the gas for generating the gas cluster.

公开(公告)号：US20240420973A1

公开(公告)日：2024-12-19

申请号：US18210762

申请日：2023-06-16

Applicant: Tokyo Electron Limited

Inventor： Michael Carcasi ,  Sean Berglund ,  Ankur Agarwal ,  Steven Gueci

IPC: H01L21/67 ,  H01L21/687

Abstract: Systems and methods are provided to control operational parameter(s) of a spin-on process based on a localized fluid velocity of a processing liquid dispensed onto a surface of a spinning semiconductor substrate. In the present disclosure, a tracer is introduced within, or incorporated onto a surface of, a processing liquid as the processing liquid is dispensed onto the spinning semiconductor substrate. Movement of the tracer is tracked over time, as the tracer flows along with the processing liquid across the spinning substrate surface, to determine a localized fluid velocity of the processing liquid at one or more radial positions on the substrate surface. The localized fluid velocity is then used to control one or more operational parameters of a spin-on process.

公开(公告)号：US20240420970A1

公开(公告)日：2024-12-19

申请号：US18703525

申请日：2022-10-25

Applicant: Tokyo Electron Limited ,  Tokyo University of Science Foundation

Inventor： Takao OKABE ,  Hirokazu UEDA ,  Naoki UMESHITA ,  Mitsuaki IWASHITA ,  Kenji SEKIGUCHI ,  Koji AKIYAMA ,  Tamotsu MORIMOTO ,  Toshikazu AKIMOTO

IPC: H01L21/67

Abstract: A liquid circulation system according to an aspect of the present disclosure is for recovering an ionic liquid supplied into a vacuum chamber and returning the recovered ionic liquid back again into the vacuum chamber, and includes a storage tank having an opening communicating with an inside of the vacuum chamber and configured to store the ionic liquid recovered from the inside of the vacuum chamber through the opening, a viscosity pump provided below the storage tank in a vertical direction, and a pipe configured to supply the ionic liquid inside the storage tank into the vacuum chamber.

公开(公告)号：US12170209B2

公开(公告)日：2024-12-17

申请号：US17443358

申请日：2021-07-26

Applicant: Tokyo Electron Limited

Inventor： Takashi Yabuta ,  Hidetoshi Nakao ,  Masatoshi Kasahara ,  Daisuke Saiki

IPC: H01L21/67 ,  B01F3/04 ,  B01F3/22 ,  B01F23/232 ,  B01F23/80 ,  H01L21/306 ,  B01F23/237

Abstract: A substrate processing apparatus includes: at least one processing part for etching a polysilicon film or an amorphous silicon film formed on a substrate using an alkaline chemical liquid; a reservoir configured to recover and store the chemical liquid used in the at least one processing part; processing lines configured to supply the chemical liquid stored in the reservoir to the at least one processing part; a circulation line configured to take out the chemical liquid from the reservoir and to return the same to the reservoir; and a first gas supply line connected to the circulation line and configured to supply an inert gas to the circulation line. The circulation line includes an ejection port configured to eject a mixed fluid of the inert gas supplied by the first gas supply line and the chemical liquid taken out from the reservoir into the chemical liquid stored in the reservoir.

公开(公告)号：US20240412955A1

公开(公告)日：2024-12-12

申请号：US18810862

申请日：2024-08-21

Applicant: Tokyo Electron Limited ,  TAIYO NIPPON SANSO CORPORATION

Inventor： Masahiko YOKOI ,  Koki TANAKA ,  Maju TOMURA ,  Yoshihide KIHARA ,  Masahiro YONEKURA

IPC: H01J37/32

Abstract: A temperature adjusting system is a temperature adjusting system that cools a part in a plasma processing chamber and includes: a condenser that condenses a temperature adjusting medium that is in a gaseous state at normal temperature and normal pressure; a heat exchanger that cools the temperature adjusting medium that has been condensed by the condenser; a temperature adjusting unit that cools the part by heat exchange with the temperature adjusting medium that has been cooled by the heat exchanger; and a pump that circulates the temperature adjusting medium.

公开(公告)号：US12167542B2

公开(公告)日：2024-12-10

申请号：US17521563

申请日：2021-11-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Manabu Nakagawasai ,  Motoi Yamagata

IPC: H05K3/30 ,  H01L21/67 ,  G01K1/14

Abstract: There is provided a method for manufacturing a substrate with a sensor in which a sensor is disposed on a plate-shaped substrate. The method comprises: holding the sensor by a magnetic force from a position on an opposite surface of a surface of the plate-shaped substrate on which the sensor is disposed that corresponds to a position where the sensor is fixed; and fixing the sensor to the plate-shaped substrate by curing an adhesive attached to the sensor in a state where the sensor is held by the magnetic force.

公开(公告)号：US12165893B2

公开(公告)日：2024-12-10

申请号：US18182716

申请日：2023-03-13

Applicant: Tokyo Electron Limited

Inventor： Norihiko Amikura ,  Masatomo Kita ,  Toshiyuki Makabe ,  Shin Matsuura ,  Nobutaka Sasaki ,  Gyeong min Park

IPC: H01L21/677 ,  H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687

Abstract: A substrate processing system includes a vacuum transfer module; a plasma process module; a transfer robot in the vacuum transfer module; a stage in the plasma process module; a first ring disposed on the stage and a second ring disposed on the first ring to surround a substrate that is placed on the stage, the second ring having an inner diameter smaller than an inner diameter of the first ring; actuators to move support pins vertically to raise the first and the second rings and a transfer jig; and a controller configured to selectively execute a simultaneous transfer mode in which the transfer robot is caused to simultaneously transfer the first ring and the second ring and a sole transfer mode in which the transfer robot is caused to transfer only the second ring.

公开(公告)号：US12165848B2

公开(公告)日：2024-12-10

申请号：US17755406

申请日：2020-10-15

Applicant: Tokyo Electron Limited

Inventor： Kenichi Oyama ,  Shohei Yamauchi ,  Kazuya Dobashi ,  Akitaka Shimizu

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  C23C8/24

Abstract: The present disclosure appropriately shortens a processing step for processing a substrate in which a silicon layer and a silicon germanium layer are alternatively laminated. The present disclosure provides a substrate processing method of processing the substrate in which the silicon layer and the silicon germanium layer are alternatively laminated, which includes forming an oxide film by selectively modifying a surface layer of an exposed surface of the silicon germanium layer by using a processing gas including fluorine and oxygen and converted into plasma.