公开(公告)号：US10317797B2

公开(公告)日：2019-06-11

申请号：US15817724

申请日：2017-11-20

Applicant: Tokyo Electron Limited ,  TOKYO OHKA KOGYO CO., LTD.

Inventor： Hidetami Yaegashi ,  Kenichi Oyama ,  Katsumi Ohmori ,  Yoshitaka Komuro ,  Takehiro Seshimo

IPC: G03F1/36 ,  G03F1/76 ,  G03F7/20 ,  G06F17/50 ,  H01L21/033 ,  H01L21/768 ,  H01L23/544 ,  H01L21/3213

Abstract: A pattern forming method includes forming a first film patterned in a line and space shape on an underlayer film, the line and space shape including lines and a space arranged therebetween, forming a second film to cover the first film, removing the second film to form the second film on a side surface of the first film in a line shape, forming a third film to cover the first film and the second film, removing the third film formed on the first film and the second film to form the third film on a side surface of the second film, and converting the third film after removing the third film formed on the first film and the second film, wherein the third film is comprised of an organic metal compound, the organic metal compound having characteristic to increase etching tolerance when the organic metal compound undergoes a predetermined process.

公开(公告)号：US20210335568A1

公开(公告)日：2021-10-28

申请号：US17018741

申请日：2020-09-11

Applicant: Tokyo Electron Limited

Inventor： Kazuya Dobashi ,  Hiromitsu Kambara ,  Masaru Nishino ,  Reo Kosaka ,  Matthew Gwinn ,  Luis Fernandez ,  Kenichi Oyama ,  Sakurako Natori ,  Noriaki Okabe

IPC: H01J37/20 ,  H01J37/317

Abstract: A method of processing a substrate includes loading the substrate on a substrate holder. The substrate includes a major surface and a feature disposed over the major surface. The feature has a first width along an etch direction. The method includes exposing portions of the major surface and changing the first width of the feature to a second width along the etch direction by etching a first portion of the sidewalls of the feature with a gas cluster ion beam oriented along a beam direction.

公开(公告)号：US20130209941A1

公开(公告)日：2013-08-15

申请号：US13759669

申请日：2013-02-05

Applicant: TOKYO OHKA KOGYO CO., LTD ,  TOKYO ELECTRON LIMITED

Inventor： Naoto Motoike ,  Katsumi Ohmori ,  Toshiaki Hato ,  Hidetami Yaegashi ,  Kenichi Oyama

IPC: G03F7/20

CPC classification number: G03F7/2026 ,  G03F7/0045 ,  G03F7/405

Abstract: A method of forming a pattern including applying a resist composition to a substrate to form a resist film, and then subjecting the resist film to exposure and development, thereby forming a first pattern containing a resist film; forming a SiO2 film on the surface of the first pattern and the substrate; subjecting the SiO2 to etching such that the SiO2 film remains only on a side wall portion of the first pattern; and removing the first pattern, thereby forming a second pattern containing the SiO2 film. Thr resist composition contains a base component that exhibits changed solubility in a developing solution under action of an acid, and an acid generator component that generates acid upon exposure, the base component containing a resin component containing a structural unit having an acid decomposable group which exhibits increased polarity by the action of acid and has no polycyclic group.

Abstract translation: 一种形成图案的方法，包括将抗蚀剂组合物施加到基底以形成抗蚀剂膜，然后对抗蚀剂膜进行曝光和显影，从而形成含有抗蚀剂膜的第一图案; 在所述第一图案和所述基板的表面上形成SiO 2膜; 对SiO 2进行蚀刻，使得SiO 2膜仅保留在第一图案的侧壁部分上; 并且去除第一图案，从而形成包含SiO 2膜的第二图案。 Thr抗蚀剂组合物含有在酸的作用下在显影液中显示出改变的溶解性的基础成分和暴露时产生酸的酸发生剂成分，所述基体成分含有含有具有酸分解性基团的结构单元的树脂成分， 通过酸的作用增加了极性，没有多环基团。

公开(公告)号：US12165848B2

公开(公告)日：2024-12-10

申请号：US17755406

申请日：2020-10-15

Applicant: Tokyo Electron Limited

Inventor： Kenichi Oyama ,  Shohei Yamauchi ,  Kazuya Dobashi ,  Akitaka Shimizu

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  C23C8/24

Abstract: The present disclosure appropriately shortens a processing step for processing a substrate in which a silicon layer and a silicon germanium layer are alternatively laminated. The present disclosure provides a substrate processing method of processing the substrate in which the silicon layer and the silicon germanium layer are alternatively laminated, which includes forming an oxide film by selectively modifying a surface layer of an exposed surface of the silicon germanium layer by using a processing gas including fluorine and oxygen and converted into plasma.

公开(公告)号：US10211050B2

公开(公告)日：2019-02-19

申请号：US15237840

申请日：2016-08-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hidetami Yaegashi ,  Kenichi Oyama ,  Masatoshi Yamato ,  Tomohiro Iseki ,  Toyohisa Tsuruda

IPC: G03F7/20 ,  G03F7/36 ,  G03F7/004 ,  H01L21/027 ,  H01L21/31 ,  H01L21/469

Abstract: There is provided a semiconductor device manufacturing method, including: a film forming process in which, by supplying a solution for modifying a surface layer of a resist to a target object having a resist pattern and allowing the solution to infiltrate into the resist, a film having elasticity and having no compatibility with the resist is formed in the surface layer of the resist; and a heating process in which the target object having the film formed thereon is heated.

公开(公告)号：US09023225B2

公开(公告)日：2015-05-05

申请号：US14038345

申请日：2013-09-26

Applicant: Tokyo Electron Limited

Inventor： Kenichi Oyama ,  Hidetami Yaegashi

IPC: H01L21/306 ,  H01L21/308 ,  B81C1/00

CPC classification number: H01L21/306 ,  B81C1/00031 ,  B81C2201/0149 ,  H01L21/3086

Abstract: A pattern forming method includes forming a pattern forming material film on a substrate as an etching target film, the pattern forming material film having an exposing section that has porosity upon exposure and a non-exposing section, patterning and exposing the pattern forming material film for the exposing section to have the porosity, selectively infiltrating a filling material into voids of the exposing section to reinforce the exposing section, and removing the non-exposing section of the pattern forming material film by dry etching to form a predetermined pattern.

Abstract translation: 图案形成方法包括在基板上形成图案形成材料膜作为蚀刻靶膜，所述图案形成材料膜具有曝光时具有孔隙率的曝光部分和非曝光部分，图案化和曝光图案形成材料膜，用于 暴露部分具有孔隙率，选择性地将填充材料渗透到曝光部分的空隙中以加强曝光部分，以及通过干蚀刻去除图案形成材料膜的非曝光部分以形成预定图案。

公开(公告)号：US09459535B2

公开(公告)日：2016-10-04

申请号：US13759669

申请日：2013-02-05

Applicant: Tokyo Ohka Kogyo Co., Ltd. ,  Tokyo Electron Limited

Inventor： Naoto Motoike ,  Katsumi Ohmori ,  Toshiaki Hato ,  Hidetami Yaegashi ,  Kenichi Oyama

IPC: G03F7/26 ,  G03F7/20 ,  G03F7/004 ,  G03F7/40

CPC classification number: G03F7/2026 ,  G03F7/0045 ,  G03F7/405

Abstract: A method of forming a pattern including applying a resist composition to a substrate to form a resist film, and then subjecting the resist film to exposure and development, thereby forming a first pattern containing a resist film; forming a SiO2 film on the surface of the first pattern and the substrate; subjecting the SiO2 to etching such that the SiO2 film remains only on a side wall portion of the first pattern; and removing the first pattern, thereby forming a second pattern containing the SiO2 film. The resist composition contains a base component that exhibits changed solubility in a developing solution under action of an acid, and an acid generator component that generates acid upon exposure, the base component containing a resin component containing a structural unit having an acid decomposable group which exhibits increased polarity by the action of acid and has no polycyclic group.

Abstract translation: 一种形成图案的方法，包括将抗蚀剂组合物施加到基底以形成抗蚀剂膜，然后对抗蚀剂膜进行曝光和显影，从而形成含有抗蚀剂膜的第一图案; 在所述第一图案和所述基板的表面上形成SiO 2膜; 对SiO 2进行蚀刻，使得SiO 2膜仅保留在第一图案的侧壁部分上; 并且去除第一图案，从而形成包含SiO 2膜的第二图案。 抗蚀剂组合物含有在酸的作用下在显影液中显示出改变的溶解性的基质成分和暴露时产生酸的酸产生剂组分，所述基质成分含有含有具有酸分解性基团的结构单元的树脂成分， 通过酸的作用增加了极性，没有多环基团。

公开(公告)号：US09418860B2

公开(公告)日：2016-08-16

申请号：US14518699

申请日：2014-10-20

Applicant: Tokyo Electron Limited

Inventor： Mark H. Somervell ,  Makoto Muramatsu ,  Benjamen M. Rathsack ,  Tadatoshi Tomita ,  Hisashi Genjima ,  Hidetami Yaegashi ,  Kenichi Oyama

IPC: H01L21/302 ,  H01L21/308 ,  G03F7/42 ,  H01L21/027 ,  G03F7/00 ,  G03F7/09 ,  H01L21/033 ,  H01L21/3213

CPC classification number: G03F7/0002 ,  G03F7/091 ,  G03F7/165 ,  G03F7/40 ,  G03F7/42 ,  H01L21/0273 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31116 ,  H01L21/32139

Abstract: A method is provided for forming a patterned topography on a substrate. The substrate is provided with features formed atop that constitute an existing topography, and a template for directed self-assembly (DSA) is formed surrounding the exposed topography. Further to the method, the exposed template surfaces are chemically treated. In one embodiment, the surfaces are treated with a hydrogen-containing reducing chemistry to alter the surfaces to a less oxidized state. In another embodiment, the surfaces are coated with a first phase of a block copolymer (BCP) to render the surfaces more attractive to the first phase than prior to the coating. The template is then filled with the BCP to cover the exposed topography, and then the BCP is annealed within the template to drive self-assembly in alignment with the topography. Developing the annealed BCP exposes a DSA pattern immediately overlying the topography.

Abstract translation: 提供了一种在衬底上形成图案形貌的方法。 衬底具有形成在顶部的构成现有形貌的特征，并且围绕暴露的形貌形成用于定向自组装（DSA）的模板。 除了该方法之外，曝光的模板表面经化学处理。 在一个实施方案中，用含氢还原化学处理表面以将表面改变为较少氧化的状态。 在另一个实施方案中，表面涂覆有嵌段共聚物（BCP）的第一相，使表面比涂覆前比第一相更有吸引力。 然后用BCP填充模板以覆盖暴露的形貌，然后在模板内对BCP进行退火以驱动与地形对准的自组装。 开发退火的BCP暴露了立即覆盖地形的DSA模式。

公开(公告)号：US20150111387A1

公开(公告)日：2015-04-23

申请号：US14518699

申请日：2014-10-20

Applicant: Tokyo Electron Limited

Inventor： Mark H. Somervell ,  Makoto Muramatsu ,  Benjamen M. Rathsack ,  Tadatoshi Tomita ,  Hisashi Genjima ,  Hidetami Yaegashi ,  Kenichi Oyama

IPC: H01L21/308 ,  H01L21/027

CPC classification number: G03F7/0002 ,  G03F7/091 ,  G03F7/165 ,  G03F7/40 ,  G03F7/42 ,  H01L21/0273 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31116 ,  H01L21/32139

Abstract: A method is provided for forming a patterned topography on a substrate. The substrate is provided with features formed atop that constitute an existing topography, and a template for directed self-assembly (DSA) is formed surrounding the exposed topography. Further to the method, the exposed template surfaces are chemically treated. In one embodiment, the surfaces are treated with a hydrogen-containing reducing chemistry to alter the surfaces to a less oxidized state. In another embodiment, the surfaces are coated with a first phase of a block copolymer (BCP) to render the surfaces more attractive to the first phase than prior to the coating. The template is then filled with the BCP to cover the exposed topography, and then the BCP is annealed within the template to drive self-assembly in alignment with the topography. Developing the annealed BCP exposes a DSA pattern immediately overlying the topography.

Abstract translation: 提供了一种在衬底上形成图案形貌的方法。 衬底具有形成在顶部的构成现有形貌的特征，并且围绕暴露的形貌形成用于定向自组装（DSA）的模板。 除了该方法之外，曝光的模板表面经化学处理。 在一个实施方案中，用含氢还原化学处理表面以将表面改变为较少氧化的状态。 在另一个实施方案中，表面涂覆有嵌段共聚物（BCP）的第一相，使表面比涂覆前比第一相更有吸引力。 然后用BCP填充模板以覆盖暴露的形貌，然后在模板内对BCP进行退火以驱动与地形对准的自组装。 开发退火的BCP暴露了立即覆盖地形的DSA模式。