FOREIGN MATERIALS FILTERING APPARATUS AND WASHING MACHINE HAVING THE SAME
    91.
    发明申请
    FOREIGN MATERIALS FILTERING APPARATUS AND WASHING MACHINE HAVING THE SAME 有权
    异物过滤设备和洗衣机

    公开(公告)号:US20080216522A1

    公开(公告)日:2008-09-11

    申请号:US12041823

    申请日:2008-03-04

    IPC分类号: D06F39/10 B01D35/30

    CPC分类号: D06F39/10

    摘要: In a foreign materials filtering apparatus and a washing machine having the same, owing to a detachable mounting structure between a handle and a front filter and between a rear filter and the front filter, foreign materials collected in a foreign materials filtering space can be easily cleaned. Accordingly, can be solved the conventional problem that a net filter has to be kept inside out at the time of a cleaning process, resulting in causing a user's hands to become dirty. Also, can be solved the conventional problem that there is a difficulty in removing foreign materials from the net filter due to a fibrous characteristic of the net filter.

    摘要翻译: 在异物过滤装置和具有该外部材料过滤装置的洗衣机中,由于把手和前过滤器之间以及后过滤器和前过滤器之间的可拆卸的安装结构,可以容易地清除收集在异物过滤空间中的异物 。 因此,可以解决在清洁处理时必须将净过滤器保持在内部的常规问题,导致使用者的手变脏。 此外,可以解决由于净过滤器的纤维特性而难以从净过滤器去除异物的常规问题。

    Switching mode power supply and driving method
    92.
    发明申请
    Switching mode power supply and driving method 有权
    开关电源和驱动方式

    公开(公告)号:US20080089100A1

    公开(公告)日:2008-04-17

    申请号:US11807460

    申请日:2007-05-29

    IPC分类号: H02M3/335

    CPC分类号: H02M3/33515 H02M3/33523

    摘要: A switching mode power supply includes a switching transistor, coupled to a primary coil at a primary side of a transformer for converting an input DC voltage, supplying power to a secondary and a tertiary coil at a secondary side of the transformer according to an operation of the switching transistor; a switching controller receiving a feedback voltage corresponding to a first voltage generated in the secondary coil and receiving a detection signal corresponding to a current of the switching transistor to generate a switching control signal for controlling the turn on/off of the switching transistor; and a feedback signal generator receiving the first voltage and the switching control signal to set a sampling period, and storing the first voltage, sampled with a last pulse of the first pulse string within the sampling period as a feedback voltage. The output voltage is thereby accurately detected without opto-couplers or shunt regulators.

    摘要翻译: 开关电源包括开关晶体管,其耦合到变压器的初级侧的初级线圈,用于转换输入直流电压,根据变压器的次级侧向次级侧的次级侧和第三级线圈供电 开关晶体管; 接收与所述次级线圈中产生的第一电压相对应的反馈电压的开关控制器,并接收对应于所述开关晶体管的电流的检测信号,以产生用于控制所述开关晶体管的导通/截止的开关控制信号; 以及反馈信号发生器,接收第一电压和开关控制信号以设置采样周期,并且将在采样周期内的第一脉冲串的最后脉冲采样的第一电压存储为反馈电压。 因此,在没有光耦合器或分流稳压器的情况下,可以精确地检测输出电压。

    Switch control device
    93.
    发明申请
    Switch control device 失效
    开关控制装置

    公开(公告)号:US20070268169A1

    公开(公告)日:2007-11-22

    申请号:US11804468

    申请日:2007-05-18

    IPC分类号: H03M3/00

    CPC分类号: H03K17/0822 H03K2017/0806

    摘要: The present invention relates to a switch controlling apparatus. The switch controlling apparatus controls a main switch by using a first signal that corresponds to a current flowing to the main switch. The switch controlling apparatus includes a PWM controller for generating a control signal to control turning on/off of the main switch by using the first signal and a clock signal, and a TSD unit for changing the control signal corresponding to heat generated from the main switch. The TSD unit changes a response speed for the heat of the main switch by using the clock signal and the control signal.

    摘要翻译: 开关控制装置技术领域本发明涉及开关控制装置。 开关控制装置通过使用与流过主开关的电流对应的第一信号来控制主开关。 开关控制装置包括PWM控制器,用于通过使用第一信号和时钟信号产生控制主开关的导通/截止的控制信号,以及TSD单元,用于改变与从主开关产生的热相对应的控制信号 。 TSD单元通过使用时钟信号和控制信号来改变主开关的热量的响应速度。

    Thin film transistor array panel for liquid crystal display and method of manufacturing the same
    94.
    发明授权
    Thin film transistor array panel for liquid crystal display and method of manufacturing the same 有权
    用于液晶显示器的薄膜晶体管阵列面板及其制造方法

    公开(公告)号:US06798442B1

    公开(公告)日:2004-09-28

    申请号:US09450333

    申请日:1999-11-29

    IPC分类号: B02F11336

    摘要: A gate wire including a gate line extending in the horizontal direction, and a gate electrode is formed on an insulating substrate. A gate insulating layer is formed on the gate wire and covers the same. A semiconductor pattern is formed on the gate insulating layer 30, and formed on the semiconductor pattern are a data wire having a data line in the vertical direction, a source electrode, a drain electrode separated from the source electrode opposite the source electrode with respect to the gate electrode, and an align pattern located on both sides of the data line. A passivation layer is formed on the data wire and the align pattern, and has contact holes exposing the drain electrode and an opening exposing the substrate between the data line and the align pattern. Here, the align pattern adjacent to the data line is exposed through the opening, and the semiconductor pattern and the gate insulating layer are under-cut. A pixel electrode connected to the drain electrode through the contact hole is formed on the passivation layer. Here, the opening is located between the data line and the pixel electrode. In this structure, misalignment occurring in the manufacturing process of a thin film transistor panel for a liquid crystal display is minimized, and stitch defects are prevented by uniformly forming a coupling capacitance between the data line and the pixel electrode. Shorts between the data line and the pixel electrode are prevented by forming the opening between the data line and the pixel electrode.

    摘要翻译: 包括在水平方向延伸的栅极线的栅极线和在绝缘基板上形成栅电极。 栅极绝缘层形成在栅极导线上并覆盖其上。 在栅极绝缘层30上形成半导体图案,在半导体图案上形成有在垂直方向上具有数据线的数据线,源电极,与源极相对的源电极分离的漏电极相对于 栅极电极和位于数据线两侧的对准图案。 在数据线和对准图案上形成钝化层,并且具有暴露漏电极的接触孔和在数据线和对准图案之间暴露衬底的开口。 这里,与数据线相邻的对准图案通过开口露出,并且半导体图案和栅极绝缘层被切割。 通过接触孔连接到漏电极的像素电极形成在钝化层上。 这里,开口位于数据线和像素电极之间。 在这种结构中,在用于液晶显示器的薄膜晶体管面板的制造过程中发生的偏移被最小化,并且通过在数据线和像素电极之间均匀地形成耦合电容来防止缝合缺陷。 通过在数据线和像素电极之间形成开口来防止数据线与像素电极之间的短路。

    Waste gas disposal apparatus and method of the same
    95.
    发明授权
    Waste gas disposal apparatus and method of the same 失效
    废气处理装置及其方法相同

    公开(公告)号:US5832843A

    公开(公告)日:1998-11-10

    申请号:US788075

    申请日:1997-01-22

    摘要: Disclosed is a waste gas disposal apparatus and method of the same which eliminates efficiently toxic components of waste gas resulted from semiconductor manufacture process prior to waste gas emission to the atmosphere, showing improvements in disposal efficiency, safety and costs.This apparatus is comprised of an inlet head into which waste gas, inert gas and air are introduced, respectively; a heating chamber provided under the inlet head for heating up the incoming mixture gas from the inlet head to create reactant fine particles from a heating reaction; a reaction preventive unit provided in the heating chamber for making impossible to react the waste gas to the air at upper portion of the heating chamber; a scrubber unit connected to the heating chamber for scrapping off the solid dust particles adsorbed to the inner wall thereof; and a container connected to the scrubber unit by an engagement member for storing the off solid dust particles therein.

    摘要翻译: 公开了一种废气处理装置及其方法,其在废气排放到大气之前消除了由半导体制造过程产生的废气的有毒成分,显示了处理效率,安全性和成本的提高。 该装置包括分别引入废气,惰性气体和空气的入口头; 加热室,设置在入口头下方,用于加热来自入口头的入口混合气体,以产生来自加热反应的反应物细颗粒; 反应防止单元,设置在所述加热室中,用于使所述废气不可能与所述加热室的上部的空气反应; 连接到加热室的洗涤器单元,用于废除吸附在其内壁上的固体尘埃颗粒; 以及通过用于将固体粉尘颗粒存储在其中的接合构件连接到洗涤器单元的容器。

    Fabric treating machine
    97.
    发明授权
    Fabric treating machine 有权
    织物处理机

    公开(公告)号:US08833113B2

    公开(公告)日:2014-09-16

    申请号:US12753357

    申请日:2010-04-02

    IPC分类号: D06B1/02

    摘要: A fabric treating machine includes a spray nozzle for spraying water supplied from a water supply passage into an inner tub and a spray nozzle combining unit for combining the spray nozzle with a case. Fabric loaded in the inner tub can be effectively soaked through the spray nozzle. Furthermore, a spray direction of the spray nozzle can be accurately adjusted when the spray nozzle is fitted in the case, and thus the spray nozzle can be easily fitted in the case and water sprayed through the spray nozzle can be prevented from overflowing.

    摘要翻译: 织物处理机包括用于喷射从供水通道供应到内桶的喷嘴和用于将喷嘴与壳体组合的喷嘴组合单元。 装在内桶中的织物可以有效地通过喷嘴浸泡。 此外,当将喷嘴安装在壳体中时,可以精确地调节喷嘴的喷射方向,并且因此喷嘴可以容易地装配在壳体中,并且可以防止通过喷嘴喷射的水溢出。

    Method for producing induced pluripotent stem cells with high efficiency and induced poluripotent stem cells prouced thereby
    99.
    发明授权
    Method for producing induced pluripotent stem cells with high efficiency and induced poluripotent stem cells prouced thereby 有权
    由此产生高效率诱导的多能干细胞的诱导多能干细胞的方法

    公开(公告)号:US08673633B2

    公开(公告)日:2014-03-18

    申请号:US13120331

    申请日:2010-09-17

    IPC分类号: C12N5/00 C12N5/02 C12N15/00

    摘要: The present invention provides a method for producing customized pluripotent stem cells. Specifically, the present invention comprises following steps: extracting proteins from any of the dedifferentiated stem cells or induced pluripotent stem cells, the said dedifferentiated or pluripotent stem cells being prepared by any known method; introducing the protein extract into the adult somatic cells; and culturing the adult somatic cells to produce pluripotent stem cells having the same pluripotency as that of embryonic stem cells. In addition, pluripotent stem cells produced according to the present method and cell therapeutics comprising the same are provided. The method allows pluripotent stem cells to be produced very easily and at a significantly higher yield, compared to typical methods.

    摘要翻译: 本发明提供一种生产定制多能干细胞的方法。 具体地说,本发明包括以下步骤:从任何去分化干细胞或诱导多能干细胞中提取蛋白质,所述去分化或多能干细胞通过任何已知方法制备; 将蛋白质提取物引入成体体细胞; 并培养成体细胞以产生具有与胚胎干细胞相同多能性的多能干细胞。 此外,提供了根据本发明方法产生的多能干细胞和包含其的细胞治疗剂。 与典型的方法相比,该方法允许非常容易地和以显着更高的产量制造多能干细胞。

    Two Doping Regions in Lightly Doped Drain for Thin Film Transistors and Associated Doping Processes
    100.
    发明申请
    Two Doping Regions in Lightly Doped Drain for Thin Film Transistors and Associated Doping Processes 有权
    用于薄膜晶体管和相关掺杂过程的轻掺杂漏极中的两个掺杂区域

    公开(公告)号:US20140061656A1

    公开(公告)日:2014-03-06

    申请号:US13601535

    申请日:2012-08-31

    IPC分类号: H01L27/15 H01L33/08

    摘要: A method is provided for fabricating thin-film transistors (TFTs) for an LCD having an array of pixels. The method includes depositing a first photoresist layer over a portion of a TFT stack that includes a conductive gate layer, and a semiconductor layer. The method also includes doping the exposed semiconductor layer with a first doping dose. The method further includes etching a portion of the conductive gate layer to expose a portion of the semiconductor layer, and doping the exposed portion of the semiconductor layer with a second doping dose. The method also includes depositing a second photoresist layer over a first portion of the doped semiconductor layer in an active area of the pixels to expose a second portion of the doped semiconductor layer in an area surrounding the active area, and doping the second portion of the doped semiconductor layer with a third doping dose.

    摘要翻译: 提供了一种制造用于具有像素阵列的LCD的薄膜晶体管(TFT)的方法。 该方法包括在包括导电栅极层的TFT堆叠的一部分上沉积第一光致抗蚀剂层和半导体层。 该方法还包括以第一掺杂剂量掺杂暴露的半导体层。 该方法还包括蚀刻导电栅极层的一部分以暴露半导体层的一部分,并以第二掺杂剂量掺杂半导体层的暴露部分。 该方法还包括在像素的有源区域中在掺杂半导体层的第一部分上沉积第二光致抗蚀剂层,以在有源区域周围的区域中暴露掺杂半导体层的第二部分,以及掺杂半导体层的第二部分 掺杂半导体层具有第三掺杂剂量。