公开(公告)号：US20200340114A1

公开(公告)日：2020-10-29

申请号：US16835849

申请日：2020-03-31

Applicant: ASM IP HOLDING B.V.

Inventor： Jani Hamalainen ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/455 ,  C23C16/06 ,  C23C16/30 ,  C23C16/08 ,  C23C16/34

Abstract: Methods for depositing rhenium-containing thin films are provided. In some embodiments metallic rhenium-containing thin films are deposited. In some embodiments rhenium sulfide thin films are deposited. In some embodiments films comprising rhenium nitride are deposited. The rhenium-containing thin films may be deposited by cyclic vapor deposition processes, for example using rhenium halide precursors. The rhenium-containing thin films may find use, for example, as 2D materials.

公开(公告)号：US10208379B2

公开(公告)日：2019-02-19

申请号：US15820188

申请日：2017-11-21

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami Pore ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/00 ,  C23C16/455 ,  C23C16/30 ,  H01L45/00 ,  C23C16/18 ,  C23C16/44 ,  H01L21/02

Abstract: Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR1R2R3)3 are preferably used, wherein R1, R2, and R3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.

公开(公告)号：US20180099916A1

公开(公告)日：2018-04-12

申请号：US15729210

申请日：2017-10-10

Applicant: ASM IP Holding B.V.

Inventor： Timo Hatanpää ,  Miika Mattinen ,  Mikko Ritala ,  Markku Leskelä

IPC: C07C49/92 ,  C23C16/455 ,  C23C16/30 ,  C07C45/77

CPC classification number: C07C49/92 ,  C07C45/77 ,  C23C16/305 ,  C23C16/45553

Abstract: Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS2, WNx, WO3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.

公开(公告)号：US09765431B2

公开(公告)日：2017-09-19

申请号：US15073275

申请日：2016-03-17

Applicant: ASM IP HOLDING B.V.

Inventor： Jani Hamalainen ,  Jani Holopainen ,  Timo Hatanpaa ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/455 ,  C23C16/08 ,  C23C16/18 ,  C23C16/30 ,  C23C16/50 ,  C23C16/40

CPC classification number: C23C16/45527 ,  C23C16/08 ,  C23C16/18 ,  C23C16/30 ,  C23C16/401 ,  C23C16/50

Abstract: The present application relates to atomic layer deposition (ALD) processes for producing metal phosphates such as titanium phosphate, aluminum phosphate and lithium phosphate, as well as to ALD processes for depositing lithium silicates.

公开(公告)号：US20160222515A1

公开(公告)日：2016-08-04

申请号：US15096511

申请日：2016-04-12

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami Pore ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/455 ,  H01L45/00 ,  H01L21/02 ,  C23C16/44 ,  C23C16/18

CPC classification number: C23C16/45553 ,  C23C16/18 ,  C23C16/305 ,  C23C16/4408 ,  C23C16/45555 ,  H01L21/02521 ,  H01L21/02538 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02551 ,  H01L21/0262 ,  H01L45/06 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1616

Abstract: Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR1R2R3)3 are preferably used, wherein R1, R2, and R3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.

Abstract translation: 提供了用于形成含有Sb，Sb-Te，Ge-Sb和Ge-Sb-Te薄膜的含VA薄膜的原子层沉积（ALD）工艺，以及相关组合物和结构。 优选使用Sb（SiR1R2R3）3的Sb前体，其中R1，R2和R3是烷基。 As，Bi和P前体也被描述。 还提供了用于合成这些Sb前体的方法。 还提供了在相变存储器件中使用Sb薄膜的方法。

公开(公告)号：US09382615B2

公开(公告)日：2016-07-05

申请号：US13802382

申请日：2013-03-13

Applicant: ASM IP HOLDING B.V.

Inventor： Miia Mäntymäki ,  Jani Hämäläinen ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/08 ,  C23C16/30 ,  C23C16/455

CPC classification number: C23C16/45527 ,  C23C16/08 ,  C23C16/30 ,  C23C16/45534

Abstract: A vapor deposition process for forming a thin film on a substrate in a reaction chamber where the process includes contacting the substrate with a fluoride precursor. The process results in the formation of a lithium fluoride thin film.

Abstract translation: 一种用于在反应室中的基底上形成薄膜的气相沉积工艺，其中所述方法包括使基底与氟化物前体接触。 该方法导致形成氟化锂薄膜。