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268 条记录 (耗时 0.03 秒)

    Reverse lithographic process for semiconductor vias
    91.
    发明授权
    Reverse lithographic process for semiconductor vias 有权
    半导体通孔反向光刻工艺

    公开(公告)号：US06221777B1

    公开(公告)日：2001-04-24

    申请号：US09329154

    申请日：1999-06-09

    申请人： Bhanwar Singh ,  Bharath Rangarajan ,  Ursula Q. Quinto

    发明人： Bhanwar Singh ,  Bharath Rangarajan ,  Ursula Q. Quinto

    IPC分类号： H01L2100

    CPC分类号： H01L27/11521 ,  H01L21/76802 ,  H01L21/76816

    摘要： A reverse lithographic process is provided for more densely packing semiconductors onto a semiconductor wafer. A semiconductor wafer having a dielectric covered semiconductor device has a photoresist deposited which is patterned with vias in closely packed rows and columns. The resist is developed and trimmed to form via photoresist structures. A non-photosensitive polymer is deposited over the via photoresist structures and, when hardened, is subject to planarizing to expose the via photoresist structures. The via photoresist structures are removed and leave a reverse image patterned polymer. The photoresist is removed leaving the reverse image patterned polymer, which is then used to etch the dielectric to form vias to the semiconductor device.

    摘要翻译： 提供反向光刻工艺用于在半导体晶片上更密集地堆叠半导体。 具有电介质覆盖的半导体器件的半导体晶片具有沉积的光致抗蚀剂，其以紧密堆积的行和列形成通孔。 抗蚀剂被显影和修整以通过光致抗蚀剂结构形成。 非光敏聚合物沉积在通孔光致抗蚀剂结构上，并且当硬化时，进行平面化以暴露通孔光致抗蚀剂结构。 去除通孔光致抗蚀剂结构并留下反向图案图案化的聚合物。 除去光致抗蚀剂留下反向图案图案化的聚合物，然后将其用于蚀刻电介质以形成到半导体器件的通孔。

    Focus monitor structure and method for lithography process
    92.
    发明授权
    Focus monitor structure and method for lithography process 失效
    光刻工艺的聚焦监视器结构和方法

    公开(公告)号：US6063531A

    公开(公告)日：2000-05-16

    申请号：US167417

    申请日：1998-10-06

    申请人： Bhanwar Singh ,  Bharath Rangarajan ,  Khoi Anh Phan ,  Carmen L. Morales

    发明人： Bhanwar Singh ,  Bharath Rangarajan ,  Khoi Anh Phan ,  Carmen L. Morales

    IPC分类号： G03F7/20 ,  G03F9/02 ,  G03F9/00

    CPC分类号： G03F7/70625 ,  G03F7/70641

    摘要： A focus monitor structure is placed on a reticle or mask near the production device structures, such as integrated circuits, to monitor the focal conditions of the lithography process as well as other parameters, such as the critical dimension, and proximity effects. The focus monitor structure includes a series of densely packed parallel lines and an isolated line along with a line that is positioned orthogonally to the densely packed lines forming an "L" shaped structure. The focus monitor structure also includes a plurality of rectangular islands that create post structures when patterned in the resist layer. The lines of the focus monitor structure are approximately the critical dimension and the rectangular islands vary in width between .+-.10% of the critical dimension. By manually or automatically inspecting the focus monitor structure after it is patterned into a layer of resist, including measuring the width of the resist lines and the resist profile angle of the orthogonal line, information relating to the critical dimension as well as the focal conditions of the lithography process can be determined.

    摘要翻译： 将聚焦监视器结构放置在生产设备结构（例如集成电路）附近的掩模版或掩模上，以监视光刻工艺的焦点状况以及其他参数，例如临界尺寸和邻近效应。 聚焦监视器结构包括一系列密集的平行线和一条隔离的线以及一条线，该线与形成“L”形结构的密集线相正交。 聚焦监视器结构还包括当在抗蚀剂层中图案化时产生柱结构的多个矩形岛。 聚焦监视器结构的线条大致是临界尺寸，矩形岛的宽度在临界尺寸的+/- 10％之间变化。 在聚焦监视器结构被图案化成抗蚀剂层之后，通过手动或自动地检查聚焦监视器结构，包括测量抗蚀剂线的宽度和正交线的抗蚀剂轮廓角，与关键尺寸以及焦点监视结构的焦点条件 可以确定光刻工艺。

    Antireflective siliconoxynitride hardmask layer used during etching processes in integrated circuit fabrication
    93.
    发明授权
    Antireflective siliconoxynitride hardmask layer used during etching processes in integrated circuit fabrication 有权
    在集成电路制造中的蚀刻工艺期间使用的抗反射硅氧氮化物硬掩模层

    公开(公告)号：US6060380A

    公开(公告)日：2000-05-09

    申请号：US187391

    申请日：1998-11-06

    申请人： Ramkumar Subramanian ,  Bhanwar Singh ,  Simon Chan ,  Fei Wang

    发明人： Ramkumar Subramanian ,  Bhanwar Singh ,  Simon Chan ,  Fei Wang

    IPC分类号： H01L21/311 ,  H01L21/768 ,  H01L21/4763

    CPC分类号： H01L21/76811 ,  H01L21/31144 ,  H01L21/76813

    摘要： A method for etching openings in an integrated circuit uses siliconoxynitride as a hardmask layer. Because of the relatively low reflectivity of siliconoxynitride, when a photoresist layer is deposited on the siliconoxynitride hardmask layer and is exposed to light, the photoresist layer is patterned more conformingly to a desired pattern. The present invention may be used to particular advantage for etching contiguous trench lines and via holes in a dual damascene etch process for small dimension integrated circuits.

    摘要翻译： 用于蚀刻集成电路中的开口的方法使用硅氧氮化物作为硬掩模层。 由于硅氧氮化物的相对低的反射率，当光致抗蚀剂层沉积在硅氧氮化物硬掩模层上并暴露于光时，光致抗蚀剂层被图案更符合期望的图案。 本发明可以用于在用于小尺寸集成电路的双镶嵌蚀刻工艺中蚀刻连续沟槽线和通孔的特别优点。

    Systems and methods that control liquid temperature in immersion lithography to maintain temperature gradient to reduce turbulence
    96.
    发明授权
    Systems and methods that control liquid temperature in immersion lithography to maintain temperature gradient to reduce turbulence 有权
    控制浸没式光刻液温度以保持温度梯度以减少湍流的系统和方法

    公开(公告)号：US08547521B1

    公开(公告)日：2013-10-01

    申请号：US11000653

    申请日：2004-12-01

    申请人： Srikanteswara Dakshina-Murthy ,  Bhanwar Singh ,  Ramkumar Subramanian

    发明人： Srikanteswara Dakshina-Murthy ,  Bhanwar Singh ,  Ramkumar Subramanian

    IPC分类号： G03B27/42 ,  G03B27/52 ,  G03B27/54

    CPC分类号： G03F7/70891 ,  G03F7/70341

    摘要： The subject invention provides systems and methods that monitor and/or control turbulence of an immersion medium. The systems and methods relate to computer controlled techniques that reduce effects of immersion medium flow due to a liquid temperature gradient. According to an aspect of the subject invention, a number of temperature measurements of the immersion medium are obtained, and the temperature measurements are utilized to generate a gradient map of the immersion medium. By way of illustration, the temperature measurements can be made via wireless temperature sensors. The gradient map can be utilized to understand the stability of the immersion medium. According to an aspect of the subject invention, instability identified with the gradient map can be mitigated.

    摘要翻译： 本发明提供了监测和/或控制浸没介质的湍流的系统和方法。 这些系统和方法涉及由于液体温度梯度而降低浸没介质流动影响的计算机控制技术。 根据本发明的一个方面，获得浸渍介质的多个温度测量值，并利用温度测量值来产生浸渍介质的梯度图。 作为说明，可以通过无线温度传感器进行温度测量。 梯度图可用于了解浸没介质的稳定性。 根据本发明的一个方面，可以减轻用梯度图识别的不稳定性。

    Process margin using discrete assist features
    97.
    发明授权
    Process margin using discrete assist features 有权
    使用离散辅助功能的处理余量

    公开(公告)号：US07749662B2

    公开(公告)日：2010-07-06

    申请号：US11245824

    申请日：2005-10-07

    申请人： Itty Matthew ,  Bhanwar Singh

    发明人： Itty Matthew ,  Bhanwar Singh

    IPC分类号： G03F1/00

    CPC分类号： G03F1/36

    摘要： The subject invention provides a system and method for improving the process margin of a lithographic imaging system. The process margin improvement is achieved through the novel placement of discrete assist features and/or the use of forbidden pitches and specific pitch orientations. Novel geometries are utilized, which take advantage of line-end pull back and/or a lack of resolution of pitches perpendicular to an axis of a dipole illumination source. The strategic placement of a series of discrete scatterbar segments on a mask near positions of critical features, such as, for example, contacts, mitigates resist residue that can result from the use of a contiguous scatterbar.

    摘要翻译： 本发明提供了一种用于改善光刻成像系统的工艺余量的系统和方法。 通过新颖的离散辅助特征的放置和/或使用禁止间距和特定的俯仰方向来实现工艺余量的改善。 利用新的几何形状，其利用垂直于偶极照明源的轴线的线端拉回和/或缺少分支的分辨率。 在临界特征（例如接触）位置附近的掩模上的一系列离散散射片段的战略布置减轻了抵抗可能由于使用连续散射线而产生的残留物。

    Post fabrication CD modification on imprint lithography mask
    99.
    发明授权
    Post fabrication CD modification on imprint lithography mask 失效
    压印光刻掩模后制造CD修改

    公开(公告)号：US07386162B1

    公开(公告)日：2008-06-10

    申请号：US10874498

    申请日：2004-06-23

    申请人： Srikanteswara Dakshina-Murthy ,  Bhanwar Singh ,  Ramkumar Subramanian

    发明人： Srikanteswara Dakshina-Murthy ,  Bhanwar Singh ,  Ramkumar Subramanian

    IPC分类号： G06K9/00

    CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/67242

    摘要： The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that facilitate compensating for imprint mask critical dimension error(s). An aspect of the invention generates feedback information that facilitates control of imprint mask critical dimension via employing a scatterometry system to detect imprint mask critical dimension error, and mitigating the error via a spacer etchback procedure.

    摘要翻译： 本发明一般涉及光刻系统和方法，更具体地涉及有助于补偿压印掩模临界尺寸误差的系统和方法。 本发明的一个方面产生反馈信息，其通过使用散射测量系统来检测压印掩模临界尺寸误差并通过间隔回蚀程序来减轻误差，从而有助于控制压印掩模临界尺寸。

    Topography compensation of imprint lithography patterning
    100.
    发明授权
    Topography compensation of imprint lithography patterning 失效
    压印光刻图案的地形补偿

    公开(公告)号：US07376259B1

    公开(公告)日：2008-05-20

    申请号：US10874499

    申请日：2004-06-23

    申请人： Srikanteswara Dakshina-Murthy ,  Bhanwar Singh ,  Ramkumar Subramanian

    发明人： Srikanteswara Dakshina-Murthy ,  Bhanwar Singh ,  Ramkumar Subramanian

    IPC分类号： G06K9/00

    CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

    摘要： The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that modify an imprint mask. An aspect of the invention generates feedback information that facilitates control of imprint mask feature height via employing a scatterometry system to detect topography variation and, decreasing imprint mask feature height in order to compensate for topography variation.

    摘要翻译： 本发明一般涉及光刻系统和方法，更具体地涉及修改压印掩模的系统和方法。 本发明的一个方面产生反馈信息，其通过使用散射测量系统来检测地形变化和减小压印掩模特征高度以便补偿地形变化，从而有助于控制印迹掩模特征高度。