Method of fabricating a nonvolatile charge trap memory device
    91.
    发明授权
    Method of fabricating a nonvolatile charge trap memory device 有权
    制造非易失性电荷陷阱存储器件的方法

    公开(公告)号:US08318608B2

    公开(公告)日:2012-11-27

    申请号:US12197466

    申请日:2008-08-25

    Abstract: A method for fabricating a nonvolatile charge trap memory device is described. The method includes providing a substrate having a charge-trapping layer disposed thereon. A portion of the charge-trapping layer is then oxidized to form a blocking dielectric layer above the charge-trapping layer by exposing the charge-trapping layer to a radical oxidation process.

    Abstract translation: 描述了制造非易失性电荷陷阱存储器件的方法。 该方法包括提供其上设置有电荷捕获层的衬底。 然后通过将电荷捕获层暴露于自由基氧化过程,电荷俘获层的一部分被氧化以形成电荷俘获层上方的阻挡电介质层。

    Radical oxidation process for fabricating a nonvolatile charge trap memory device
    92.
    发明授权
    Radical oxidation process for fabricating a nonvolatile charge trap memory device 有权
    用于制造非易失性电荷陷阱存储器件的自由基氧化工艺

    公开(公告)号:US08283261B2

    公开(公告)日:2012-10-09

    申请号:US12124855

    申请日:2008-05-21

    Abstract: A method for fabricating a nonvolatile charge trap memory device is described. The method includes providing a substrate having a charge-trapping layer disposed Thereon. A portion of the charge-trapping layer is then oxidized to form a blocking dielectric layer above the charge-trapping layer by exposing the charge-trapping layer to a radical oxidation process.

    Abstract translation: 描述了制造非易失性电荷陷阱存储器件的方法。 该方法包括提供其上设置有电荷捕获层的衬底。 然后通过将电荷捕获层暴露于自由基氧化过程,电荷俘获层的一部分被氧化以形成电荷俘获层上方的阻挡电介质层。

    Oxide formation in a plasma process
    93.
    发明授权
    Oxide formation in a plasma process 有权
    在等离子体工艺中形成氧化物

    公开(公告)号:US08119538B1

    公开(公告)日:2012-02-21

    申请号:US11836683

    申请日:2007-08-09

    Abstract: A method of making a semiconductor structure is provided. The method includes forming a dielectric layer using a high density plasma oxidation process. The dielectric layer is on a storage layer and the thickness of the storage layer is reduced during the high density plasma oxidation process.

    Abstract translation: 提供制造半导体结构的方法。 该方法包括使用高密度等离子体氧化工艺形成介电层。 电介质层在存储层上,并且在高密度等离子体氧化过程中存储层的厚度减小。

    Method of ONO integration into MOS flow
    94.
    发明授权
    Method of ONO integration into MOS flow 有权
    ONO集成到MOS流中的方法

    公开(公告)号:US08071453B1

    公开(公告)日:2011-12-06

    申请号:US12608886

    申请日:2009-10-29

    CPC classification number: H01L21/768 H01L27/11568 H01L29/792

    Abstract: A method of ONO integration of a non-volatile memory device (e.g. EEPROM, floating gate FLASH and SONOS) into a baseline MOS device (e.g. MOSFET) is described. In an embodiment the bottom two ONO layers are formed prior to forming the channel implants into the MOS device, and the top ONO layer is formed simultaneously with the gate oxide of the MOS device.

    Abstract translation: 描述了将非易失性存储器件(例如EEPROM,浮动栅极FLASH和SONOS)的ONO集成到基准MOS器件(例如MOSFET)中的方法。 在一个实施例中,在将沟道植入物形成MOS器件之前形成底部的两个ONO层,并且顶部ONO层与MOS器件的栅极氧化物同时形成。

    Plasma oxidation of a memory layer to form a blocking layer in non-volatile charge trap memory devices
    95.
    发明授权
    Plasma oxidation of a memory layer to form a blocking layer in non-volatile charge trap memory devices 有权
    存储层的等离子体氧化在非挥发性电荷陷阱存储器件中形成阻挡层

    公开(公告)号:US07799670B2

    公开(公告)日:2010-09-21

    申请号:US12080175

    申请日:2008-03-31

    CPC classification number: H01L21/28282 H01L29/4234 H01L29/792

    Abstract: A blocking layer of a non-volatile charge trap memory device is formed by oxidizing a portion of a charge trapping layer of the memory device. In one embodiment, the blocking layer is grown by a radical oxidation process at temperature below 500° C. In accordance with one implementation, the radical oxidation process involves flowing hydrogen (H2) and oxygen (O2) gas mixture into a process chamber and exposing the substrate to a plasma. In a preferred embodiment, a high density plasma (HDP) chamber is employed to oxidize a portion of the charge trapping layer. In further embodiments, a portion of a silicon-rich silicon oxynitride charge trapping layer is consumptively oxidized to form the blocking layer and provide an increased memory window relative to oxidation of a nitrogen-rich silicon oxynitride layer.

    Abstract translation: 通过氧化存储器件的电荷俘获层的一部分来形成非易失性电荷陷阱存储器件的阻挡层。 在一个实施方案中,通过自由基氧化法在低于500℃的温度下生长阻挡层。根据一个实施方案,自由基氧化过程包括将氢(H 2)和氧(O 2)气体混合物流入处理室并暴露 衬底到等离子体。 在优选实施例中,使用高密度等离子体(HDP)室来氧化电荷俘获层的一部分。 在另外的实施例中,一部分富硅氧氮化硅电荷捕获层被消耗氧化以形成阻挡层,并且相对于富氮氧氮化硅层的氧化提供增加的存储窗口。

    Plasma oxidation of a memory layer to form a blocking layer in non-volatile charge trap memory devices
    96.
    发明申请
    Plasma oxidation of a memory layer to form a blocking layer in non-volatile charge trap memory devices 有权
    存储层的等离子体氧化在非挥发性电荷陷阱存储器件中形成阻挡层

    公开(公告)号:US20090242962A1

    公开(公告)日:2009-10-01

    申请号:US12080175

    申请日:2008-03-31

    CPC classification number: H01L21/28282 H01L29/4234 H01L29/792

    Abstract: A blocking layer of a non-volatile charge trap memory device is formed by oxidizing a portion of a charge trapping layer of the memory device. In one embodiment, the blocking layer is grown by a radical oxidation process at temperature below 500° C. In accordance with one implementation, the radical oxidation process involves flowing hydrogen (H2) and oxygen (O2) gas mixture into a process chamber and exposing the substrate to a plasma. In a preferred embodiment, a high density plasma (HDP) chamber is employed to oxidize a portion of the charge trapping layer. In further embodiments, a portion of a silicon-rich silicon oxynitride charge trapping layer is consumptively oxidized to form the blocking layer and provide an increased memory window relative to oxidation of a nitrogen-rich silicon oxynitride layer.

    Abstract translation: 通过氧化存储器件的电荷俘获层的一部分来形成非易失性电荷陷阱存储器件的阻挡层。 在一个实施方案中,通过自由基氧化法在低于500℃的温度下生长阻挡层。根据一个实施方案,自由基氧化过程包括将氢(H 2)和氧(O 2)气体混合物流入处理室并暴露 衬底到等离子体。 在优选实施例中,使用高密度等离子体(HDP)室来氧化电荷俘获层的一部分。 在另外的实施例中,一部分富硅氧氮化硅电荷捕获层被消耗氧化以形成阻挡层,并且相对于富氮氧氮化硅层的氧化提供增加的存储窗口。

    RADICAL OXIDATION PROCESS FOR FABRICATING A NONVOLATILE CHARGE TRAP MEMORY DEVICE
    98.
    发明申请
    RADICAL OXIDATION PROCESS FOR FABRICATING A NONVOLATILE CHARGE TRAP MEMORY DEVICE 有权
    用于制造非易失性电荷捕获存储器件的放射性氧化方法

    公开(公告)号:US20080293255A1

    公开(公告)日:2008-11-27

    申请号:US12124855

    申请日:2008-05-21

    Abstract: A method for fabricating a nonvolatile charge trap memory device is described. The method includes providing a substrate having a charge-trapping layer disposed Thereon. A portion of the charge-trapping layer is then oxidized to form a blocking Dielectric layer above the charge-trapping layer by exposing the charge-trapping layer to a radical oxidation process.

    Abstract translation: 描述了制造非易失性电荷陷阱存储器件的方法。 该方法包括提供其上设置有电荷捕获层的衬底。 然后通过将电荷捕获层暴露于自由基氧化过程,电荷俘获层的一部分被氧化以形成电荷俘获层上方的阻挡介电层。

    Single-wafer process for fabricating a nonvolatile charge trap memory device
    99.
    发明申请
    Single-wafer process for fabricating a nonvolatile charge trap memory device 有权
    用于制造非易失性电荷陷阱存储器件的单晶片工艺

    公开(公告)号:US20080293254A1

    公开(公告)日:2008-11-27

    申请号:US11904513

    申请日:2007-09-26

    Abstract: A method for fabricating a nonvolatile charge trap memory device is described. The method includes first forming a tunnel dielectric layer on a substrate in a first process chamber of a single-wafer cluster tool. A charge-trapping layer is then formed on the tunnel dielectric layer in a second process chamber of the single-wafer cluster tool. A top dielectric layer is then formed on the charge-trapping layer in the second or in a third process chamber of the single-wafer cluster tool.

    Abstract translation: 描述了制造非易失性电荷陷阱存储器件的方法。 该方法包括首先在单晶片簇工具的第一处理室中的衬底上形成隧道电介质层。 然后在单晶片簇工具的第二处理室中的隧道介电层上形成电荷捕获层。 然后在单晶片簇工具的第二或第三处理室中的电荷俘获层上形成顶部电介质层。

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