公开(公告)号：US09171919B2

公开(公告)日：2015-10-27

申请号：US13484301

申请日：2012-05-31

申请人： Akira Ishikawa

发明人： Akira Ishikawa

IPC分类号： H01L21/3205 ,  H01L21/4763 ,  H01L29/417 ,  H01L29/66 ,  H01L29/786 ,  H01L21/84 ,  H01L27/12

CPC分类号： H01L29/41733 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： The present invention provides a method of manufacturing a semiconductor element having a miniaturized structure and a semiconductor device in which the semiconductor element having a miniaturized structure is integrated highly, by overcoming reduction of the yield caused by alignment accuracy, accuracy of a processing technique by reduced projection exposure, a finished dimension of a resist mask, an etching technique and the like. An insulating film covering a gate electrode is formed, and a source region and a drain region are exposed, a conductive film is formed thereover, a resist having a different film thickness is formed by applying the resist over the conductive film, the entire surface of the resist is exposed to light and developed, or the entire surface of the resist is etched to form a resist mask, and the conductive film is etched by using the resist mask to form a source and drain electrode.

摘要翻译： 本发明提供一种制造具有小型结构的半导体元件和半导体器件的方法，其中具有小型结构的半导体元件被高度集成，通过克服由对准精度引起的成品率的降低，加工技术的精度降低 投影曝光，抗蚀剂掩模的成品尺寸，蚀刻技术等。 形成覆盖栅电极的绝缘膜，并且源极区域和漏极区域露出，在其上形成导电膜，通过在导电膜上涂覆抗蚀剂，形成具有不同膜厚度的抗蚀剂，整个表面 将抗蚀剂曝光并显影，或者蚀刻抗蚀剂的整个表面以形成抗蚀剂掩模，并且通过使用抗蚀剂掩模来蚀刻导电膜以形成源极和漏极。

公开(公告)号：US08241426B2

公开(公告)日：2012-08-14

申请号：US11795697

申请日：2005-12-21

申请人： Syozo Takada ,  Hisanori Matsuo ,  Akira Ishikawa

发明人： Syozo Takada ,  Hisanori Matsuo ,  Akira Ishikawa

IPC分类号： B08B3/12 ,  B08B6/00 ,  B08B7/00 ,  B08B7/02

CPC分类号： H01L21/02074 ,  C11D7/5013 ,  C11D7/5022 ,  C11D11/0047 ,  H01L21/76826 ,  H01L21/76828

摘要： When the remaining slurry and polishing residue are removed by cleaning with a cleaning liquid (preferably a cleaning liquid containing a surfactant), organic matter in the cleaning liquid containing a surfactant seeps into the interlayer insulating film 3. Therefore, the substrate is subsequently washed with an organic solvent or a solution containing an organic solvent, thus washing away the organic matter that has seeped into the interlayer insulating film 3. Although the interlayer insulating film 3 is subjected to a hydrophobic treatment, since the solvent used is an organic solvent, this solvent is able to seep into the interlayer insulating film 3, dissolve the organic matter, and wash the organic matter away without being affected by this hydrophobic treatment. Afterward, the substrate 1 is dried, and the organic solvent or solution containing an organic solvent that is adhering to the surface is removed.

摘要翻译： 当通过用清洗液（优选含有表面活性剂的清洗液）清洗剩余的浆料和抛光残渣时，含有表面活性剂的清洗液中的有机物渗入层间绝缘膜3.因此，随后用 有机溶剂或含有有机溶剂的溶液，从而洗去已经渗透到层间绝缘膜3中的有机物质。尽管对层间绝缘膜3进行疏水处理，但由于使用的溶剂是有机溶剂，因此 溶剂能够渗透到层间绝缘膜3中，溶解有机物质，并且在不受这种疏水处理的影响的情况下洗涤有机物质。 之后，干燥基板1，除去附着在表面上的有机溶剂的有机溶剂或溶液。

公开(公告)号：US20110239882A1

公开(公告)日：2011-10-06

申请号：US13075048

申请日：2011-03-29

申请人： Akira Ishikawa

发明人： Akira Ishikawa

IPC分类号： B41L41/00

CPC分类号： B41F23/0409 ,  B41F7/26 ,  B41F23/0443 ,  B41M7/0045 ,  B41M7/0081

摘要： A web printing apparatus includes a transfer device which transfers highly reactive ink/varnish onto a web, and a fixing device which fixes, on the web, the highly reactive ink/varnish transferred by the transfer device. The fixing device includes only a light irradiation device which irradiates the web with light in the wavelength range, in which no ozone is generated, to cure the highly reactive ink/varnish on the web without thermal drying of the web.

摘要翻译： 纸幅印刷装置包括将高反应性油墨/清漆转印到纸幅上的转印装置和在纸幅上固定由转印装置转印的高反应性油墨/清漆的定影装置。 定影装置仅包括光纤照射装置，其在没有产生臭氧的波长范围内照射纸幅，以在幅材上没有热干燥来固化幅材上的高反应性油墨/清漆。

公开(公告)号：US07981309B2

公开(公告)日：2011-07-19

申请号：US11921008

申请日：2006-05-16

申请人： Takehiko Ueda ,  Hosei Nakahira ,  Akira Ishikawa

发明人： Takehiko Ueda ,  Hosei Nakahira ,  Akira Ishikawa

IPC分类号： C03C25/68 ,  B24B49/00

CPC分类号： G01N21/55 ,  B24B37/013 ,  B24B49/12 ,  G01N21/9501 ,  H01L21/3212 ,  H01L22/26

摘要： The spectral reflectance spectrum of an object of polishing that has reached the polishing endpoint is found ahead of time, the spectral reflectance spectrum of the object of polishing is found during polishing, and the correlation coefficient of these is seen as parameter 1. Meanwhile, the sum of the absolute values of the difference between the first order differentials of these is seen as parameter 2. Then, when parameter 1 is in a range exceeding a specific value, and parameter 2 is at its minimum, it is concluded that the polishing endpoint has been reached. Thus, it is possible to provide a method for detecting the polishing endpoint in a highly reliable CMP polishing apparatus.

摘要翻译： 达到抛光终点的抛光对象的光谱反射光谱提前发现，抛光时发现抛光对象的光谱反射光谱，其相关系数被视为参数1。 将这些的一阶微分之差的绝对值之和视为参数2.然后，当参数1在超过特定值的范围内且参数2处于最小值时，得出结论：抛光端点 已经到达 因此，可以提供一种用于在高可靠性CMP抛光装置中检测抛光终点的方法。

公开(公告)号：US07973313B2

公开(公告)日：2011-07-05

申请号：US10781795

申请日：2004-02-20

申请人： Yasuyuki Arai ,  Akira Ishikawa ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Yuko Tachimura

发明人： Yasuyuki Arai ,  Akira Ishikawa ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Yuko Tachimura

IPC分类号： H01L27/12 ,  H01L29/66

CPC分类号： H01L27/1266 ,  G06K19/07749 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/78603

摘要： The present invention provides an ultrathin thin film integrated circuit and a thin film integrated circuit device including the thin film integrated circuit device. Accordingly, the design of a product is not spoilt while an integrated circuit formed from a silicon wafer, which is thick and produces irregularities on the surface of the product container. The thin film integrated circuit according to the present invention includes a semiconductor film as an active region (for example a channel region in a thin film transistor), unlike an integrated circuit formed from a conventional silicon wafer. The thin film integrated circuit according to the present invention is thin enough that the design is not spoilt even when a product such as a card or a container is equipped with the thin film integrated circuit.

摘要翻译： 本发明提供了一种超薄薄膜集成电路和包括薄膜集成电路器件的薄膜集成电路器件。 因此，产品的设计不会被破坏，而由硅晶片形成的集成电路是厚的，并且在产品容器的表面上产生不规则性。 根据本发明的薄膜集成电路不同于由常规硅晶片形成的集成电路，包括半导体膜作为有源区（例如，薄膜晶体管中的沟道区）。 根据本发明的薄膜集成电路足够薄，即使当诸如卡或容器的产品配备有薄膜集成电路时，该设计也不会被破坏。

公开(公告)号：US07650342B2

公开(公告)日：2010-01-19

申请号：US11628952

申请日：2005-06-10

申请人： Keiji Sugiyama ,  Junichi Hirai ,  Akira Ishikawa

发明人： Keiji Sugiyama ,  Junichi Hirai ,  Akira Ishikawa

IPC分类号： G06F7/00

CPC分类号： G06Q30/02 ,  G06Q30/0201 ,  G06Q30/04 ,  G06Q30/0601 ,  G06Q40/04

摘要： A management device that provides user profile taking the user's situation into consideration. The management device creates, in response to a request from applications, a new user profile (hereinafter referred to as “comprehensive user profile”) based on a plurality of user profiles, and provides it to the applications. The management device always monitors a user's situation, directly or indirectly correlates the user's situation at the time that the user profile is registered with the user profile, and stores the same. Because the management device creates the comprehensive user profile based on the user profile corresponding to the current user situation, the comprehensive user profile reflects the user's situation which changes from time to time.

摘要翻译： 提供考虑用户情况的用户简档的管理设备。 管理设备响应于应用的请求，创建基于多个用户简档的新用户简档（以下称为“综合用户简档”），并将其提供给应用。 管理设备始终监视用户的情况，直接或间接地将用户简档登记的用户情况与用户简档相关联，并将其存储。 由于管理设备基于与当前用户情况相对应的用户简档创建综合用户简档，所以综合用户简档反映了用户不时变化的情况。

公开(公告)号：US20090047785A1

公开(公告)日：2009-02-19

申请号：US11795697

申请日：2005-12-21

申请人： Syozo Takada ,  Hisanori Matsuo ,  Akira Ishikawa

发明人： Syozo Takada ,  Hisanori Matsuo ,  Akira Ishikawa

IPC分类号： H01L21/306 ,  B24B7/00

CPC分类号： H01L21/02074 ,  C11D7/5013 ,  C11D7/5022 ,  C11D11/0047 ,  H01L21/76826 ,  H01L21/76828

摘要： When the remaining slurry and polishing residue are removed by cleaning with a cleaning liquid (preferably a cleaning liquid containing a surfactant), organic matter in the cleaning liquid containing a surfactant seeps into the interlayer insulating film 3. Therefore, the substrate is subsequently washed with an organic solvent or a solution containing an organic solvent, thus washing away the organic matter that has seeped into the interlayer insulating film 3. Although the interlayer insulating film 3 is subjected to a hydrophobic treatment, since the solvent used is an organic solvent, this solvent is able to seep into the interlayer insulating film 3, dissolve the organic matter, and wash the organic matter away without being affected by this hydrophobic treatment. Afterward, the substrate 1 is dried, and the organic solvent or solution containing an organic solvent that is adhering to the surface is removed.

摘要翻译： 当通过用清洗液（优选含有表面活性剂的清洗液）清洗剩余的浆料和抛光残渣时，含有表面活性剂的清洗液中的有机物渗入层间绝缘膜3.因此，随后用 有机溶剂或含有有机溶剂的溶液，从而洗去已经渗透到层间绝缘膜3中的有机物质。尽管对层间绝缘膜3进行疏水处理，但由于使用的溶剂是有机溶剂，因此 溶剂能够渗透到层间绝缘膜3中，溶解有机物质，并且在不受这种疏水处理的影响的情况下洗涤有机物质。 之后，干燥基板1，除去附着在表面上的有机溶剂的有机溶剂或溶液。

公开(公告)号：US20080301166A1

公开(公告)日：2008-12-04

申请号：US11628952

申请日：2005-06-10

申请人： Keiji Sugiyama ,  Junichi Hirai ,  Akira Ishikawa

发明人： Keiji Sugiyama ,  Junichi Hirai ,  Akira Ishikawa

IPC分类号： G06F17/30 ,  G06F7/00

CPC分类号： G06Q30/02 ,  G06Q30/0201 ,  G06Q30/04 ,  G06Q30/0601 ,  G06Q40/04

摘要： The present invention provides a user profile which takes a user's situation into consideration. A management device 100 creates, in response to a request from applications 110, a new user profile (hereinafter referred to as “comprehensive user profile”) based on a plurality of user profiles, and provides it to the applications 110. The management device 100 always monitors a user's situation, directly or indirectly correlates the user's situation at the time that the user profile is registered with the user profile, and stores the same. Because the management device creates the comprehensive user profile based on the user profile corresponding to the current user situation, the comprehensive user profile reflects the user's situation which changes from time to time.

摘要翻译： 本发明提供了考虑用户情况的用户简档。 管理设备100响应于来自应用110的请求，创建基于多个用户简档的新用户简档（以下称为“综合用户简档”），并将其提供给应用110.管理设备100 始终监视用户的情况，直接或间接地将用户简档登记的用户情况与用户配置文件相关联，并将其存储。 由于管理设备基于与当前用户情况相对应的用户简档创建综合用户简档，所以综合用户简档反映了用户不时变化的情况。

公开(公告)号：US07408193B2

公开(公告)日：2008-08-05

申请号：US11530353

申请日：2006-09-08

申请人： Akira Ishikawa

发明人： Akira Ishikawa

IPC分类号： H01L29/10

CPC分类号： H01L27/1266 ,  G02F1/133305 ,  G02F1/1368 ,  G02F2001/13613 ,  H01L21/84 ,  H01L24/97 ,  H01L27/124 ,  H01L2221/68368 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01056 ,  H01L2924/0106 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00

摘要： A semiconductor device packaged in three dimensions comprises a first thin film device, a second thin film device, and a third thin film device, each of the first, second, and third thin film devices comprising a first insulating film, a first electrode formed over the first insulating film, a second insulating film formed over the first electrode, first and second thin film transistors formed over the second insulating film, wherein the first thin film transistor is connected to the first electrode through a first contact hole, a third insulating film formed over the first and second thin film transistor, a second electrode formed over the third insulating film, wherein the second electrode is connected to the second thin film transistor through a second contact hole, and a fourth insulating film formed over the third insulating film and the second electrode.

摘要翻译： 封装在三维中的半导体器件包括第一薄膜器件，第二薄膜器件和第三薄膜器件，第一，第二和第三薄膜器件中的每一个包括第一绝缘膜，形成在第一薄膜器件上的第一电极 第一绝缘膜，形成在第一电极上的第二绝缘膜，形成在第二绝缘膜上的第一和第二薄膜晶体管，其中第一薄膜晶体管通过第一接触孔连接到第一电极，第三绝缘膜 形成在第一和第二薄膜晶体管上的第二电极，形成在第三绝缘膜上的第二电极，其中第二电极通过第二接触孔连接到第二薄膜晶体管，第四绝缘膜形成在第三绝缘膜上， 第二电极。

公开(公告)号：US07404827B2

公开(公告)日：2008-07-29

申请号：US10567327

申请日：2004-08-04

申请人： Akira Ishikawa ,  Masahito Chiwaki ,  Motoko Fujii ,  Akira Fujiu

发明人： Akira Ishikawa ,  Masahito Chiwaki ,  Motoko Fujii ,  Akira Fujiu

IPC分类号： D06M10/00

CPC分类号： C11D1/72 ,  C11D3/3742 ,  D06M13/463 ,  D06M15/53 ,  D06M15/6436 ,  D06M15/647

摘要： The present invention relates to a fiber product treating agent composition containing (a) a nonionic surfactant containing 1 to 3 polyoxyalkylene groups having the number-average addition mol number of the oxyalkylene group of 50 to 200 and 1 to 3 hydrocarbon groups having 14 to 32 carbon atoms and having an HLB of 16 or more and a melting point of 30 to 80° C., and (b) an amino-modified silicone compound in a mass ratio of the component (a)/the component (b) of 4/1 to 1/4.

摘要翻译： 本发明涉及一种纤维制品处理剂组合物，其含有（a）含有1〜3个氧化烯基的加成摩尔数为50〜200，1〜3个碳原子数为14〜32的聚氧化烯的非离​​子表面活性剂 碳原子，HLB为16以上，熔点为30〜80℃，（b）成分（a）/成分（b）的质量比为4的氨基改性硅氧烷化合物 / 1至1/4。