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157 条记录 (耗时 0.04 秒)

    Blasting apparatus
    91.
    发明授权
    Blasting apparatus 失效
    爆破装置

    公开(公告)号：US06298785B1

    公开(公告)日：2001-10-09

    申请号：US09486304

    申请日：2000-02-24

    申请人： Hidehiko Maehata ,  Hiroaki Arai ,  Daisuke Tamakoshi ,  Tetsuya Inoue

    发明人： Hidehiko Maehata ,  Hiroaki Arai ,  Daisuke Tamakoshi ,  Tetsuya Inoue

    IPC分类号： F42B318

    CPC分类号： F42D3/00

    摘要： A thin metal wire 8 is fused and vaporized by a predetermined amount of electrical energy supplied to the thin metal wire 8 for a short period of time, whereby a blasting substance 3 is expanded in volume. Therefore, a vaporization expansion force caused by the fusion and vaporization of the thin metal wire 8 moves a shock delivering member 22, so that the shock delivering member 22, colliding with a to-be-blasted object H1, delivers a shock to the to-be-blasted object H1, thereby blasting the to-be-blasted object H1.

    摘要翻译： 细金属丝8被短时间供给到金属细线8的预定量的电能熔化和蒸发，从而爆炸物质3的体积膨胀。 因此，由金属细线8的熔化和蒸发引起的汽化膨胀力使冲击输送构件22移动，使得冲击输送构件22与被破坏物体H1碰撞，对冲击输送构件22产生冲击 被喷射物体H1，从而喷射待破坏的物体H1。

    Method of making compound semiconductor single-crystalline substrate for liquid phase epitaxial growth
    92.
    发明授权
    Method of making compound semiconductor single-crystalline substrate for liquid phase epitaxial growth 失效
    制备用于液相外延生长的化合物半导体单晶衬底的方法

    公开(公告)号：US5639299A

    公开(公告)日：1997-06-17

    申请号：US451572

    申请日：1995-05-26

    申请人： Tetsuya Inoue ,  Makoto Otsuki ,  Tetsuichi Yokota

    发明人： Tetsuya Inoue ,  Makoto Otsuki ,  Tetsuichi Yokota

    IPC分类号： H01L21/208 ,  H01L29/06 ,  C30B19/12

    CPC分类号： H01L21/02395 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02625 ,  H01L21/02628

    摘要： The disclosed method of making a compound semiconductor single-crystalline substrate for liquid phase epitaxial growth has a relatively low cost and excellent practicality. The compound semiconductor single-crystalline substrate is prepared to have a surface roughness of at least 1 .mu.m and not more than 10 .mu.m as measured over a line of 1 mm length. This substrate is employed as a substrate for an epitaxial wafer for an infrared- or visible light-emitting diode. Due to its particular roughness, the substrate can be prevented from slipping or falling while it is transported during processing. Furthermore, no lapping and polishing are required for manufacturing the substrate. Thus, the substrate for liquid phase epitaxial growth can be provided at a relatively low cost.

    摘要翻译： 所公开的制备用于液相外延生长的化合物半导体单晶衬底的方法具有相对低的成本和优异的实用性。 化合物半导体单晶衬底的制备是在1mm长度的线上测量的表面粗糙度为至少1μm且不大于10μm。 该衬底用作用于红外或可见发光二极管的外延晶片的衬底。 由于其特别的粗糙度，可以防止基板在加工过程中被输送时滑落或下降。 此外，制造基板时不需要研磨和抛光。 因此，可以以相对低的成本提供液相外延生长用基板。

    Revolution control circuit for internal combustion engine
    93.
    发明授权
    Revolution control circuit for internal combustion engine 失效
    内燃机转速控制电路

    公开(公告)号：US3970058A

    公开(公告)日：1976-07-20

    申请号：US409458

    申请日：1973-10-25

    申请人： Hidaka Tsukasaki ,  Tetsuya Inoue

    发明人： Hidaka Tsukasaki ,  Tetsuya Inoue

    IPC分类号： F02D41/40 ,  F02D31/00 ,  F02D41/02 ,  F02D41/22 ,  G01P1/10 ,  G05D13/62 ,  F02M39/00

    CPC分类号： F02D41/0205 ,  F02D31/007 ,  G01P1/103

    摘要： A revolution control circuit for an internal combustion engine comprising a speed voltage generator for generating a speed voltage in accordance with the number of revolutions of the engine, an oscillator circuit which starts to oscillate when the speed voltage becomes higher than a predetermined value, a transistor circuit for causing electrical semiconductor elements to be turned on and off intermittently in accordance with the oscillation frequency of the oscillator circuit, and a control element for increasing and decreasing the quantity of fuel injected in synchronism with the on and off operations of the transistor circuit.

    摘要翻译： 一种用于内燃机的转速控制电路，包括：速度电压发生器，用于根据发动机的转数产生转速电压;当速度电压变得高于预定值时开始振荡的振荡器电路;晶体管 根据振荡电路的振荡频率使电半导体元件间歇地导通和断开的电路，以及用于与晶体管电路的接通和断开操作同步地增加和减少喷射量的控制元件。