公开(公告)号：US4873087A

公开(公告)日：1989-10-10

申请号：US355887

申请日：1982-03-08

申请人： Masataka Morishita ,  Renji Aikawa ,  Shigeo Katsuragi ,  Yoshiaki Yamamoto ,  Kenichi Sugimoto

发明人： Masataka Morishita ,  Renji Aikawa ,  Shigeo Katsuragi ,  Yoshiaki Yamamoto ,  Kenichi Sugimoto

IPC分类号： A61K9/02 ,  A61K9/08 ,  A61K47/16 ,  A61K47/18 ,  A61K47/42

CPC分类号： A61K9/02 ,  A61K47/183 ,  A61K47/42 ,  Y10S514/946 ,  Y10S514/947 ,  Y10S514/966 ,  Y10S514/967

摘要： A preparation containing an absorption promoter selected from N-acyl amino acid derivatives or N-acyl peptide derivatives represented by the formula: R-CO-A (R is an aliphatic hydrocarbon group, an aromatic hydrocarbon group or an aryl-substituted lower hydrocarbon group which may optionally be substituted, and A is an amino acid residue or a peptide residue), preferably in the presence of a salt at a concentation exhibiting higher osmotic pressure than isotonic sodium chloride solution, and a medicine is found to promote absorption of the medicine through a gastrointestinal organ such as the colon and rectum, and through the vagina.

摘要翻译： 含有选自N-酰基氨基酸衍生物或由下式表示的N-酰基肽衍生物的吸收促进剂的制剂：R-CO-A（R为脂族烃基，芳族烃基或芳基取代的低级烃基 其可以任选被取代，A是氨基酸残基或肽残基），优选在与等渗氯化钠溶液相比表现出较高渗透压浓度的盐存在下，发现药物促进药物的吸收 通过胃肠器官如结肠和直肠，并通过阴道。

公开(公告)号：US4637540A

公开(公告)日：1987-01-20

申请号：US670056

申请日：1984-11-09

申请人： Yoshitada Fujita ,  Sadashi Hanada ,  Yoshiaki Yamamoto

发明人： Yoshitada Fujita ,  Sadashi Hanada ,  Yoshiaki Yamamoto

IPC分类号： B61D17/00 ,  B23K9/00 ,  B23Q1/52 ,  B62D65/00 ,  B23Q3/00

CPC分类号： B23Q1/525 ,  Y10T29/49904 ,  Y10T29/49998

摘要： A method and apparatus for assembling a structure of rolling stock or other vehicles. The method includes: supporting the structure with a long box through fastening devices to a framework on the side of the structure, rotating the structure around an axis passing closely through the center of gravity of the structure and the long box, and bringing the structure to a halt in an arbitrary position to perform various assembly operations. The apparatus includes: a structure retaining system having a long box which supports the structure lengthwise; cylindrical shafts attached at both ends of the long box and passing through the center of gravity of the structure and the long box; rotational drive devices each having a drive mechanism for driving cylindrical rollers which support the cylindrical shafts on the retaining system; and a pedestal supporting the entire system.

摘要翻译： 一种用于组装车辆或其他车辆的结构的方法和装置。 该方法包括：通过紧固装置将结构支撑在结构侧面的框架上，将结构支撑在围绕结构和长箱的重心的轴线周围旋转结构，并使结构 在任意位置停止执行各种组装操作。 该装置包括：结构保持系统，其具有纵长方向支撑结构的长箱体; 圆柱轴连接在长箱的两端并穿过结构的重心和长箱; 旋转驱动装置各自具有用于驱动支撑保持系统上的圆柱形轴的圆柱滚子的驱动机构; 和支撑整个系统的支架。

公开(公告)号：US08955497B2

公开(公告)日：2015-02-17

申请号：US13426652

申请日：2012-03-22

申请人： Masao Ino ,  Osamu Sato ,  Yoshiaki Yamamoto

发明人： Masao Ino ,  Osamu Sato ,  Yoshiaki Yamamoto

IPC分类号： F02B29/04

CPC分类号： F02M35/10052 ,  F02B29/0462 ,  F02B29/0475 ,  F02M35/10262 ,  F02M35/10268 ,  Y02T10/146

摘要： An air intake device includes a cooler and a surge tank accommodating the cooler. The air intake device is to be connected to a cylinder head of an engine. The cylinder head includes an intake port that accommodates an intake valve. The cooler has a refrigerant passage through which refrigerant flows and an air passage through which intake air flows. The surge tank has a connector connected to the cylinder head. The cooler has a protrusion protruding from the connector toward the intake valve.

摘要翻译： 进气装置包括冷却器和容纳冷却器的缓冲罐。 进气装置将连接到发动机的气缸盖。 气缸盖包括容纳进气阀的进气口。 冷却器具有制冷剂流过的制冷剂通道和吸入空气流过的空气通道。 缓冲罐具有连接到气缸盖的连接器。 冷却器具有从连接器朝向进气阀突出的突起。

公开(公告)号：US08633542B2

公开(公告)日：2014-01-21

申请号：US13230086

申请日：2011-09-12

申请人： Tetsuya Kakehata ,  Hideto Ohnuma ,  Yoshiaki Yamamoto ,  Kenichiro Makino

发明人： Tetsuya Kakehata ,  Hideto Ohnuma ,  Yoshiaki Yamamoto ,  Kenichiro Makino

IPC分类号： H01L27/12 ,  H01L29/02

CPC分类号： H01L27/1218 ,  H01L21/76254 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/0649 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/78603 ,  H01L31/0352

摘要： An object is to provide an SOI substrate provided with a semiconductor layer which can be used practically even when a glass substrate is used as a base substrate. Another object is to provide a semiconductor device having high reliability using such an SOI substrate. An altered layer is formed on at least one surface of a glass substrate used as a base substrate of an SOI substrate to form the SOI substrate. The altered layer is formed on at least the one surface of the glass substrate by cleaning the glass substrate with solution including hydrochloric acid, sulfuric acid or nitric acid. The altered layer has a higher proportion of silicon oxide in its composition and a lower density than the glass substrate.

公开(公告)号：US08598013B2

公开(公告)日：2013-12-03

申请号：US12247470

申请日：2008-10-08

申请人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Yoichi Iikubo ,  Yoshiaki Yamamoto ,  Kenichiro Makino

发明人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Yoichi Iikubo ,  Yoshiaki Yamamoto ,  Kenichiro Makino

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772

摘要： To provide a method for manufacturing an SOI substrate provided with a semiconductor layer which can be used practically even when a substrate having a low heat-resistant temperature, such as a glass substrate or the like is used. The semiconductor layer is transferred to a supporting substrate by the steps of irradiating a semiconductor wafer with ions from one surface to form a damaged layer; forming an insulating layer over one surface of the semiconductor wafer; attaching one surface of the supporting substrate to the insulating layer formed over the semiconductor wafer and performing heat treatment to bond the supporting substrate to the semiconductor wafer; and performing separation at the damaged layer into the semiconductor wafer and the supporting substrate. The damaged layer remaining partially over the semiconductor layer is removed by wet etching and a surface of the semiconductor layer is irradiated with a laser beam.

摘要翻译： 为了提供一种制造具有半导体层的SOI衬底的方法，即使使用诸如玻璃衬底等的耐热温度低的衬底也可以实际使用。 通过以下步骤将半导体层转移到支撑衬底：从一个表面照射半导体晶片以形成损伤层; 在所述半导体晶片的一个表面上形成绝缘层; 将所述支撑基板的一个表面附接到形成在所述半导体晶片上的绝缘层，并进行热处理以将所述支撑基板接合到所述半导体晶片; 并且在所述损伤层处进行到所述半导体晶片和所述支撑基板的分离。 通过湿蚀刻除去半导体层上部分残留的损伤层，并用激光束照射半导体层的表面。

公开(公告)号：US08188402B2

公开(公告)日：2012-05-29

申请号：US12153646

申请日：2008-05-22

申请人： Koichiro Tanaka ,  Yoshiaki Yamamoto ,  Takatsugu Omata

发明人： Koichiro Tanaka ,  Yoshiaki Yamamoto ,  Takatsugu Omata

IPC分类号： B23K26/02

CPC分类号： H01L21/02683 ,  B23K26/0853 ,  B23K2101/40 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1285

摘要： The invention relates to a laser treatment apparatus including a laser oscillator, an interlock provided in the laser oscillator, a movable table which moves with a certain movement period, a timer, an interlock provided in the timer, a sensor which can detect movement of the movable table, and a computer, in which the timer starts measuring time when the sensor senses passage of the movable table, and when the movable table does not pass the sensor even after the movement period, conduction between contacts of the interlock provided in the timer is blocked to operate the interlock in the laser oscillator, thereby stopping laser output. The invention also relates to a laser treatment method using the laser treatment apparatus.

摘要翻译： 本发明涉及一种激光治疗装置，包括激光振荡器，设置在激光振荡器中的联锁装置，以一定运动周期移动的可移动工作台，定时器，定时器中设置的互锁装置，能够检测 活动台和计算机，其中定时器开始测量时间，当传感器感测到可移动台的通过时，并且当移动台甚至在移动时段之后也不通过传感器时，设置在定时器中的互锁装置的触点之间的传导 被阻止在激光振荡器中操作互锁，从而停止激光输出。 本发明还涉及使用激光治疗装置的激光治疗方法。

公开(公告)号：US07807567B2

公开(公告)日：2010-10-05

申请号：US11703701

申请日：2007-02-08

申请人： Masaya Kawano ,  Yoshiaki Yamamoto ,  Takamasa Ito

发明人： Masaya Kawano ,  Yoshiaki Yamamoto ,  Takamasa Ito

IPC分类号： H01L21/4763

CPC分类号： H01L23/5226 ,  H01L21/76804 ,  H01L21/76808 ,  H01L21/76877 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The semiconductor device of the present invention includes a first interconnection, a via-plug that is connected to the first interconnection, and a second interconnection that is formed as a single unit with the via-plug. The cross-sectional shape of the via-plug is such that the plug sidewall angle, which indicates the angle of the via-plug sidewall with respect to the surface of the first interconnection, is a positive angle; and moreover, at least two points exist between the base and the top of the via-plug on at least one sidewall of the two sidewalls of the cross-sectional shape of the via-plug at which the plug sidewall angle attains a maximum value. Since shapes that would give rise to the occurrence of concentrations of stress are not formed in the via-plug sidewalls, metal is more effectively embedded in the via-hole, and the incidence of voids is prevented.

摘要翻译： 本发明的半导体器件包括第一互连，连接到第一互连的通孔，以及与通孔连接形成为单个单元的第二互连。 通孔塞的横截面形状使得指示通孔塞侧壁相对于第一互连件的表面的角度的插塞侧壁角度为正角度; 此外，在插塞侧壁角达到最大值的过孔塞的横截面形状的两个侧壁的至少一个侧壁上，在通孔塞的基部和顶部之间至少存在两个点。 由于在通孔塞侧壁中不会形成会产生应力集中的形状，所以金属更有效地嵌入到通路孔中，能够防止空隙的发生。

公开(公告)号：US07767859B2

公开(公告)日：2010-08-03

申请号：US11836224

申请日：2007-08-09

申请人： Kazuhiko Amakawa ,  Yoshiaki Yamamoto

发明人： Kazuhiko Amakawa ,  Yoshiaki Yamamoto

IPC分类号： C07C209/48

CPC分类号： B01J23/74 ,  B01J23/868 ,  B01J37/0009 ,  B01J37/03 ,  B01J37/14 ,  B01J37/16 ,  B01J37/18 ,  C07C209/48 ,  Y10S502/52 ,  C07C211/27

摘要： A method of producing a primary amine by the hydrogenation of a nitrile in the presence of a hydrogenation catalyst. The hydrogenation catalyst contains at least one metal selected from the group consisting of nickel, cobalt and iron. Before use in the hydrogenation of nitrile, the hydrogenation catalyst is pretreated with at least one treating agent selected from the group consisting of hydrocarbons, alcohols, ethers, esters and carbon monoxide at 150 to 500° C.

摘要翻译： 通过在氢化催化剂存在下氢化腈制备伯胺的方法。 氢化催化剂含有选自镍，钴和铁中的至少一种金属。 在使用腈加氢之前，在150-500℃下用至少一种选自烃，醇，醚，酯和一氧化碳的处理剂预处理氢化催化剂。

公开(公告)号：US07695985B2

公开(公告)日：2010-04-13

申请号：US10582616

申请日：2005-12-21

申请人： Koichiro Tanaka ,  Yoshiaki Yamamoto

发明人： Koichiro Tanaka ,  Yoshiaki Yamamoto

IPC分类号： H01L21/66

CPC分类号： H01L21/02675 ,  G03F7/70383 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1266 ,  H01L27/1285 ,  Y10T29/41

摘要： When annealing of a semiconductor film is conducted using a plurality of lasers, each of the distances between laser irradiation regions is different. When a lithography step is conducted in accordance with a marker which is formed over a substrate in advance after the step, light-exposure is not correctly conducted to a portion crystallized by laser. By using a laser irradiation region obtained on a laser irradiation step as a marker, light-exposure is conducted by making a light-exposure position of a stepper coincide with a large grain size region in the laser irradiation region. A large grain size region and a poorly crystalline region are detected by utilizing a thing that scattering intensity of light is different between the large grain size region and the poorly crystalline region, thereby determining a light-exposure position.

摘要翻译： 当使用多个激光器进行半导体膜的退火时，激光照射区域之间的距离各不相同。 当根据在步骤之后预先在衬底上形成的标记进行光刻步骤时，曝光不能正确地传导到通过激光结晶的部分。 通过使用在激光照射步骤中获得的激光照射区域作为标记，通过使激光照射区域中的步进曝光位置与大粒径区域一致来进行曝光。 通过利用在大晶粒尺寸区域和不良结晶区域之间的散射光强度不同的物质来检测大晶粒尺寸区域和不良结晶区域，从而确定曝光位置。

公开(公告)号：US07608527B2

公开(公告)日：2009-10-27

申请号：US11017900

申请日：2004-12-22

申请人： Koichiro Tanaka ,  Yoshiaki Yamamoto

发明人： Koichiro Tanaka ,  Yoshiaki Yamamoto

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02686 ,  B23K26/0622 ,  B23K26/0732 ,  B23K26/0736 ,  C30B1/00 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/66757

摘要： Even when the laser irradiation is performed under the same condition with the energy distribution of the beam spot shaped as appropriate, the energy given to the irradiated surface is not yet homogeneous. When a semiconductor film is crystallized to form a crystalline semiconductor film using such inhomogeneous irradiation energy, the crystallinity becomes inhomogeneous in this film, and the characteristic of semiconductor elements manufactured using this film varies. In the present invention, an irradiated object formed over a substrate is irradiated with a laser beam having the pulse width that is an order of picosecond (10−12 second) or less.

摘要翻译： 即使当在相同条件下进行激光照射，并且适当地形成束斑的能量分布时，给予照射表面的能量还不均匀。 当使用这种不均匀的照射能量使半导体膜结晶以形成晶体半导体膜时，该膜中的结晶度变得不均匀，并且使用该膜制造的半导体元件的特性变化。 在本发明中，用脉冲宽度为微秒级（10-12秒）以下的激光照射在基板上形成的照射物体。