公开(公告)号：US07239374B2

公开(公告)日：2007-07-03

申请号：US11041832

申请日：2005-01-25

申请人： Yukio Taniguchi ,  Masakiyo Matsumura

发明人： Yukio Taniguchi ,  Masakiyo Matsumura

IPC分类号： G03B27/72 ,  G03B27/54

CPC分类号： G03B27/72

摘要： A light application apparatus includes an optical modulation element provided with a plurality of phase steps, a light beam which is entered into the optical modulation element being phase-modulated by the phase steps and exits from the optical modulation element as a light beam having a first light intensity distribution. An optical system is arranged between the optical modulation element and an predetermined plane. The optical system divides the phase-modulated light beam into at least two light fluxes having second and third light intensity distributions and different optical characteristics from each other, and projects a light beam including the divided two light fluxes, the light intensity distributions of the projected light fluxes being combined with each other, so that the projected light beam has a fourth light intensity distribution with an inverse peak shape on the predetermined plane and enters the predetermined plane. The first to fourth light intensity distributions are different from each other on the predetermined plane.

摘要翻译： 一种光应用装置，包括具有多个相位步进的光调制元件，入射到光调制元件中的光束被相位步进相位调制并从光调制元件出射，作为具有第一 光强分布。 光学系统布置在光调制元件和预定平面之间。 光学系统将相位调制光束分成具有第二和第三光强分布和不同光学特性的至少两个光束，并且投影包括分割的两个光束的光束，投影的光强度分布 光束彼此组合，使得投影光束在预定平面上具有反向峰值形状的第四光强分布并进入预定平面。 第一至第四光强分布在预定平面上彼此不同。

公开(公告)号：US20060027762A1

公开(公告)日：2006-02-09

申请号：US11198185

申请日：2005-08-08

申请人： Yukio Taniguchi ,  Masakiyo Matsumura

发明人： Yukio Taniguchi ,  Masakiyo Matsumura

IPC分类号： G21G5/00

CPC分类号： H01L21/02678 ,  B23K26/066 ,  G03F1/34 ,  G03F7/70283 ,  H01L21/2026 ,  Y10S117/904

摘要： A light irradiation apparatus includes a light modulation element which has a phase step having a phase difference substantially different from 180°, an illumination optical system which illuminates the light modulation element, and an image formation optical system which forms, on an irradiation surface, a light intensity distribution based on a light beam phase-modulated by the light modulation element. The illumination optical system illuminates the light modulation element with an illumination light beam inclined in a direction normal to a step line of the phase step.

摘要翻译： 光照射装置包括具有相差大于180°的相位差的光调制元件，照明光调制元件的照明光学系统，以及在照射面上形成照明面的成像光学系统， 基于由光调制元件相位调制的光束的光强分布。 照明光学系统照射光调制元件，该照明光束在垂直于阶段阶跃线的方向上倾斜。

公开(公告)号：US20050162632A1

公开(公告)日：2005-07-28

申请号：US11041832

申请日：2005-01-25

申请人： Yukio Taniguchi ,  Masakiyo Matsumura

发明人： Yukio Taniguchi ,  Masakiyo Matsumura

IPC分类号： G02F1/13 ,  G02F1/00 ,  G03B27/72 ,  H01L21/00

CPC分类号： G03B27/72

摘要： A light application apparatus includes an optical modulation element provided with a plurality of phase steps, a light beam which is entered into the optical modulation element being phase-modulated by the phase steps and exits from the optical modulation element as a light beam having a first light intensity distribution. An optical system is arranged between the optical modulation element and an predetermined plane. The optical system divides the phase-modulated light beam into at least two light fluxes having second and third light intensity distributions and different optical characteristics from each other, and projects a light beam including the divided two light fluxes, the light intensity distributions of the projected light fluxes being combined with each other, so that the projected light beam has a fourth light intensity distribution with an inverse peak shape on the predetermined plane and enters the predetermined plane. The first to fourth light intensity distributions are different from each other on the predetermined plane.

摘要翻译： 一种光应用装置，包括具有多个相位步进的光调制元件，入射到光调制元件中的光束被相位步进相位调制并从光调制元件出射，作为具有第一 光强分布。 光学系统布置在光调制元件和预定平面之间。 光学系统将相位调制光束分成具有第二和第三光强分布和不同光学特性的至少两个光束，并且投影包括分割的两个光束的光束，投影的光强度分布 光束彼此组合，使得投影光束在预定平面上具有反向峰值形状的第四光强分布并进入预定平面。 第一至第四光强分布在预定平面上彼此不同。

公开(公告)号：US08168979B2

公开(公告)日：2012-05-01

申请号：US12467852

申请日：2009-05-18

申请人： Tomoya Kato ,  Masakiyo Matsumura

发明人： Tomoya Kato ,  Masakiyo Matsumura

IPC分类号： H01L29/10 ,  H01L29/76 ,  H01L31/036 ,  H01L31/112

CPC分类号： H01L21/02675 ,  H01L21/02609 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78678 ,  H01L29/78696

摘要： According to a crystallization method, in the crystallization by irradiating a non-single semiconductor thin film of 40 to 100 nm provided on an insulation substrate with a laser light, a light intensity distribution having an inverse peak pattern is formed on the surface of the substrate, a light intensity gradient of the light intensity distribution is controlled, a crystal grain array is formed in which each crystal grain is aligned having a longer shape in a crystal growth direction than in a width direction and having a preferential crystal orientation (100) in a grain length direction, and a TFT is formed in which a source region and a drain region are formed so that current flows across a plurality of crystal grains of the crystal grain array in the crystal growth direction.

摘要翻译： 根据结晶化方法，在通过用激光照射设置在绝缘基板上的40〜100nm的非单一半导体薄膜的结晶化中，在基板的表面上形成具有逆峰图案的光强度分布 控制光强分布的光强度梯度，形成晶体晶格阵列，其中每个晶粒在晶体生长方向上比在宽度方向上具有更长的形状，并且具有优选的晶体取向（100） 形成晶粒长度方向，并且形成TFT，其中形成源区和漏区，使得电流在晶粒生长方向上流过晶粒阵列的多个晶粒。

公开(公告)号：US20090004763A1

公开(公告)日：2009-01-01

申请号：US12145826

申请日：2008-06-25

申请人： Takashi Ono ,  Masakiyo Matsumura ,  Kazurumi Azuma ,  Tomoya Kato

发明人： Takashi Ono ,  Masakiyo Matsumura ,  Kazurumi Azuma ,  Tomoya Kato

IPC分类号： H01L21/00 ,  B05C11/00

CPC分类号： G01B11/06 ,  B23K26/048 ,  H01L21/02678 ,  H01L21/02686

摘要： The present invention discloses a laser crystallization method and crystallization apparatus using a high-accuracy substrate height control mechanism. There is provided a laser crystallization method includes obtaining a first pulse laser beam having an inverse-peak-pattern light intensity distribution formed by a phase shifter, and irradiating a thin film disposed on a substrate with the first pulse laser beam, thereby melting and crystallizing the thin film, the method includes selecting a desired one of reflected light components of a second laser beam by using a polarizing element disposed on an optical path of the second laser beam when illuminating, with the second laser beam, an first pulse laser beam irradiation position of the thin film, correcting a height of the substrate to a predetermined height by detecting the selected reflected light component, and irradiating the first pulse laser beam to the thin film having the corrected height.

摘要翻译： 本发明公开了一种使用高精度基板高度控制机构的激光结晶方法和结晶装置。 提供了一种激光结晶方法，包括获得具有由移相器形成的反峰值图案光强度分布的第一脉冲激光束，并用第一脉冲激光束照射设置在基板上的薄膜，由此熔化和结晶 该薄膜的方法包括：当利用第二激光束照射第二激光束时，使用设置在第二激光束的光路上的偏振元件来选择第二激光束的所需一个反射光分量 通过检测所选择的反射光分量将衬底的高度校正到预定高度，并将第一脉冲激光束照射到具有校正高度的薄膜上。

公开(公告)号：US20070063228A1

公开(公告)日：2007-03-22

申请号：US11432387

申请日：2006-05-12

申请人： Tomoya Kato ,  Masakiyo Matsumura ,  Yoshiaki Nakazaki

发明人： Tomoya Kato ,  Masakiyo Matsumura ,  Yoshiaki Nakazaki

IPC分类号： H01L27/148 ,  H01L29/768 ,  H01L29/74

CPC分类号： H01L29/78621 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78675 ,  H01L29/78678

摘要： An object of the present invention is to provide a thin film transistor having a high mobility and having fewer fluctuations in the mobility or threshold voltage characteristics. A non-single-crystal semiconductor thin film having a thickness of less than 50 nm and disposed on an insulating substrate is irradiated with laser light having an inverse-peak-patterned light intensity distribution to grow crystals unidirectionally in a lateral direction. Thus, band-like crystal grains having a dimension in a crystal growth direction, which is longer than a width, are arranged adjacent to each other in a width direction to form a crystal grain array. A source region and a drain region of a TFT are formed so that a current flows in the crystal growth direction in an area including a plurality of crystal grains of this crystal grain array.

摘要翻译： 本发明的目的是提供一种具有高迁移率并具有较少的迁移率或阈值电压特性波动的薄膜晶体管。 用具有反峰图案的光强度分布的激光照射厚度小于50nm并且设置在绝缘基板上的非单晶半导体薄膜，以在横向上单向生长晶体。 因此，具有长于宽度的晶体生长方向的尺寸的带状晶粒沿宽度方向彼此相邻地布置以形成晶粒阵列。 形成TFT的源极区域和漏极区域，使得电流在包含该晶体阵列的多个晶粒的区域中的晶体生长方向上流动。

公开(公告)号：US07173593B2

公开(公告)日：2007-02-06

申请号：US10662531

申请日：2003-09-16

申请人： Masakiyo Matsumura ,  Takahiro Korenari

发明人： Masakiyo Matsumura ,  Takahiro Korenari

IPC分类号： G09G3/36

CPC分类号： G09G3/3648 ,  G09G3/3614 ,  G09G2300/0809 ,  G09G2300/0842

摘要： A liquid crystal display includes pixels arrayed in a matrix of rows and columns, scanning lines extending along the rows of the pixels, signal lines extending along the columns of the pixels, and pixel driving sections which are disposed near intersections of the scanning lines and signal lines, and each of which is controlled via one scanning line to capture a data signal on one signal line and output the data signal to one pixel. Particularly, each pixel driving section includes a memory circuit having a transistor whose gate is connected to the one signal line, and first and second storage capacitances which are charged to positive and negative power supply voltages and connected to a source and drain of the transistor to store the data signal as analog drive voltages of positive and negative polarities, respectively.

摘要翻译： 液晶显示器包括排列成行和列的矩阵的像素，沿着像素行延伸的扫描线，沿着像素的列延伸的信号线，以及设置在扫描线和信号的交叉点附近的像素驱动部分 线，并且其中的每一个通过一条扫描线控制以在一个信号线上捕获数据信号，并将数据信号输出到一个像素。 特别地，每个像素驱动部分包括具有栅极连接到一个信号线的晶体管的存储电路，以及被充电到正和负电源电压并连接到晶体管的源极和漏极的第一和第二存储电容， 将数据信号分别作为正极性和负极性的模拟驱动电压存储。

公开(公告)号：US06828178B2

公开(公告)日：2004-12-07

申请号：US10192850

申请日：2002-07-11

申请人： Masakiyo Matsumura ,  Yasuhisa Oana ,  Hiroyuki Abe ,  Yoshitaka Yamamoto ,  Hideo Koseki ,  Mitsunori Warabisako

发明人： Masakiyo Matsumura ,  Yasuhisa Oana ,  Hiroyuki Abe ,  Yoshitaka Yamamoto ,  Hideo Koseki ,  Mitsunori Warabisako

IPC分类号： H01L2184

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L21/67373 ,  H01L21/67379 ,  H01L21/67772 ,  H01L21/67775 ,  H01L27/1218 ,  H01L27/1274 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/66772 ,  H01L29/78654 ,  H01L29/78675

摘要： A thin film semiconductor device and a method for producing it are described. In the thin film layer of semiconductor of the device, a plurality of large size single-crystalline grains of semiconductor are formed in a regulated configuration, and each of single crystalline grains is equipped with one unit of electric circuit having a gate electrode, a source electrode and drain electrode. Such regulated arrangement of large size single-crystalline grains in the semiconductor layer is realized by a process including a step of irradiating the layer of amorphous or polycrystalline semiconductor with energy beam such as excimer laser so that maximum irradiation intensity points and minimum irradiation intensity points are arranged regulatedly. The device can have a high mobility such as about 500 cm2/V sec.

摘要翻译： 对薄膜半导体器件及其制造方法进行说明。 在器件的半导体薄膜层中，以规定的形式形成多个大尺寸的半导体单晶晶粒，并且每个单晶粒都配备有一个单元的电路，该电路具有栅电极，源极 电极和漏电极。 半导体层中大尺寸单晶晶粒的这种调节布置通过包括以下步骤的方法来实现：使用能量束如准分子激光器照射非晶或多晶半导体层，使得最大照射强度点和最小照射强度点为 按规定排列。 该装置可以具有高迁移率，例如约500cm 2 / V sec。

公开(公告)号：US07830606B2

公开(公告)日：2010-11-09

申请号：US12509269

申请日：2009-07-24

申请人： Takashi Ono ,  Kazufumi Azuma ,  Masakiyo Matsumura

发明人： Takashi Ono ,  Kazufumi Azuma ,  Masakiyo Matsumura

IPC分类号： G02B27/10

CPC分类号： G02B3/005 ,  G02B3/0062 ,  G02B3/06 ,  G02B27/0927 ,  G02B27/0961

摘要： An optical device comprises a first cylindrical lens array in which a plurality of first lens segments each having a first radius of curvature and a first width so as to divide laser light into a plurality of light components are arranged, and a plurality of second lens segments each having a second radius of curvature and a second width, and provided in at least one position of the first cylindrical lens array so as to be arranged between adjacent first lens segments.

摘要翻译： 光学装置包括：第一柱面透镜阵列，其中多个第一透镜段各自具有第一曲率半径和第一宽度以将激光分成多个光分量，并且多个第二透镜段 每个具有第二曲率半径和第二宽度，并且设置在第一柱面透镜阵列的至少一个位置，以便布置在相邻的第一透镜段之间。

公开(公告)号：US07485505B2

公开(公告)日：2009-02-03

申请号：US11855755

申请日：2007-09-14

申请人： Yoshiaki Nakazaki ,  Genshiro Kawachi ,  Terunori Warabisako ,  Masakiyo Matsumura

发明人： Yoshiaki Nakazaki ,  Genshiro Kawachi ,  Terunori Warabisako ,  Masakiyo Matsumura

IPC分类号： H01L21/84

CPC分类号： H01L21/02675 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： The present invention provides a thin-film transistor offering a higher electron (or hole) mobility, a method for manufacturing the thin-film transistor, and a display using the thin-film transistor. The present invention provides a thin-film transistor having a source region, a channel region, and a drain region in a semiconductor thin film with a crystal grown in a horizontal direction, the thin-film transistor having a gate insulating film and a gate electrode over the channel region, wherein a drain edge of the drain region which is adjacent to the channel region is formed in the vicinity of a crystal growth end position.

摘要翻译： 本发明提供了提供更高电子（或空穴）迁移率的薄膜晶体管，薄膜晶体管的制造方法和使用该薄膜晶体管的显示器。 本发明提供一种具有在水平方向上生长的晶体的半导体薄膜中的源极区，沟道区和漏极区的薄膜晶体管，该薄膜晶体管具有栅极绝缘膜和栅电极 在沟道区域上形成漏极区的与沟道区相邻的漏极边缘在晶体生长终点附近。