公开(公告)号：US07485505B2

公开(公告)日：2009-02-03

申请号：US11855755

申请日：2007-09-14

申请人： Yoshiaki Nakazaki ,  Genshiro Kawachi ,  Terunori Warabisako ,  Masakiyo Matsumura

发明人： Yoshiaki Nakazaki ,  Genshiro Kawachi ,  Terunori Warabisako ,  Masakiyo Matsumura

IPC分类号： H01L21/84

CPC分类号： H01L21/02675 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： The present invention provides a thin-film transistor offering a higher electron (or hole) mobility, a method for manufacturing the thin-film transistor, and a display using the thin-film transistor. The present invention provides a thin-film transistor having a source region, a channel region, and a drain region in a semiconductor thin film with a crystal grown in a horizontal direction, the thin-film transistor having a gate insulating film and a gate electrode over the channel region, wherein a drain edge of the drain region which is adjacent to the channel region is formed in the vicinity of a crystal growth end position.

摘要翻译： 本发明提供了提供更高电子（或空穴）迁移率的薄膜晶体管，薄膜晶体管的制造方法和使用该薄膜晶体管的显示器。 本发明提供一种具有在水平方向上生长的晶体的半导体薄膜中的源极区，沟道区和漏极区的薄膜晶体管，该薄膜晶体管具有栅极绝缘膜和栅电极 在沟道区域上形成漏极区的与沟道区相邻的漏极边缘在晶体生长终点附近。

公开(公告)号：US20070023757A1

公开(公告)日：2007-02-01

申请号：US11428496

申请日：2006-07-03

申请人： Yoshiaki Nakazaki ,  Genshiro Kawachi ,  Terunori Warabisako ,  Masakiyo Matsumura

发明人： Yoshiaki Nakazaki ,  Genshiro Kawachi ,  Terunori Warabisako ,  Masakiyo Matsumura

IPC分类号： H01L29/76

CPC分类号： H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： The present invention provides a thin-film transistor having a higher mobility for electrons or holes, a method for manufacturing the thin-film transistor, and a display using the thin-film transistor. Thus, the present invention provides a thin-film transistor having a source region, a channel region, and a drain region in a semiconductor thin film having a crystallization region with a crystal grown in a horizontal direction, the thin-film transistor having a gate insulating film and a gate electrode over the channel region, wherein a drain edge of the drain region which is adjacent to the channel region is formed in the vicinity of a crystal growth end position.

摘要翻译： 本发明提供了一种对于电子或空穴具有较高迁移率的薄膜晶体管，薄膜晶体管的制造方法和使用该薄膜晶体管的显示器。 因此，本发明提供一种薄膜晶体管，其在具有在水平方向上生长的晶体的结晶区域的半导体薄膜中具有源极区域，沟道区域和漏极区域，所述薄膜晶体管具有栅极 绝缘膜和沟道区上的栅极电极，其中在晶体生长结束位置附近形成漏极区的与沟道区相邻的漏极边缘。

公开(公告)号：US07288787B2

公开(公告)日：2007-10-30

申请号：US11428477

申请日：2006-07-03

申请人： Yoshiaki Nakazaki ,  Genshiro Kawachi ,  Terunori Warabisako ,  Masakiyo Matsumura

发明人： Yoshiaki Nakazaki ,  Genshiro Kawachi ,  Terunori Warabisako ,  Masakiyo Matsumura

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L21/02675 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： The present invention provides a thin-film transistor offering a higher electron (or hole) mobility, a method for manufacturing the thin-film transistor, and a display using the thin-film transistor. The present invention provides a thin-film transistor having a source region, a channel region, and a drain region in a semiconductor thin film with a crystal grown in a horizontal direction, the thin-film transistor having a gate insulating film and a gate electrode over the channel region, wherein a drain edge of the drain region which is adjacent to the channel region is formed in the vicinity of a crystal growth end position.

摘要翻译： 本发明提供了提供更高电子（或空穴）迁移率的薄膜晶体管，薄膜晶体管的制造方法和使用该薄膜晶体管的显示器。 本发明提供一种具有在水平方向上生长的晶体的半导体薄膜中的源极区，沟道区和漏极区的薄膜晶体管，该薄膜晶体管具有栅极绝缘膜和栅电极 在沟道区域上形成漏极区的与沟道区相邻的漏极边缘在晶体生长终点附近。

公开(公告)号：US20060033104A1

公开(公告)日：2006-02-16

申请号：US11197637

申请日：2005-08-05

申请人： Yoshiaki Nakazaki ,  Fumiki Nakano ,  Genshiro Kawachi ,  Terunori Warabisako ,  Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masato Hiramatsu ,  Tomoya Kato

发明人： Yoshiaki Nakazaki ,  Fumiki Nakano ,  Genshiro Kawachi ,  Terunori Warabisako ,  Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masato Hiramatsu ,  Tomoya Kato

IPC分类号： H01L29/04 ,  H01L29/76 ,  H01L27/12

CPC分类号： H01L21/02675 ,  B23K26/073 ,  G02F1/13454 ,  H01L21/2026 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78675 ,  H01L29/78696

摘要： There is disclosed a thin film transistor having a source region, a channel region, and a drain region in a semiconductor thin film whose crystals have grown in a transverse direction, the thin film transistor having a gate insulating film and a gate electrode in an upper part of the channel region, wherein a channel-region-side edge portion of the drain region or the source region is disposed in such a manner as to be positioned in the vicinity of an end position of lateral growth.

摘要翻译： 公开了一种在半导体薄膜中具有晶体沿横向生长的源极区，沟道区和漏极区的薄膜晶体管，薄膜晶体管具有栅极绝缘膜和位于上部的栅电极 沟道区域的一部分，其中漏极区域或源极区域的沟道区域侧边缘部分以这样的方式设置，以便位于横向生长的结束位置附近。

公开(公告)号：US20050212063A1

公开(公告)日：2005-09-29

申请号：US11085111

申请日：2005-03-22

申请人： Fumiki Nakano ,  Genshiro Kawachi ,  Yoshiaki Nakazaki ,  Shinzo Tsuboi ,  Takahiko Endo ,  Tomoya Kato

发明人： Fumiki Nakano ,  Genshiro Kawachi ,  Yoshiaki Nakazaki ,  Shinzo Tsuboi ,  Takahiko Endo ,  Tomoya Kato

IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L21/8236 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786

CPC分类号： H01L27/1296 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78696

摘要： There is provided a thin-film transistor that is formed on an insulating substrate, is capable of a high-speed operation, has small non-uniformity among devices, is hardly susceptible to device destruction due to high voltage, and is free from the effect of a parasitic transistor that forms at an edge part of an Si island. The thin-film semiconductor device is formed using a thin-film semiconductor provided on the insulating substrate and includes a gate region for formation of a channel region through which a drain current flows. The gate region has a ring shape in plan on the insulating substrate. High concentration impurity-doped regions are dividedly provided on an inside and an outside of the ring-shaped gate region, and the channel region is formed of a plurality of fan-shaped semiconductor single-crystal portions.

摘要翻译： 提供一种薄膜晶体管，其形成在绝缘基板上，能够进行高速运转，器件之间的不均匀性较小，几乎不易受高电压造成的器件破坏，并且不受影响 形成在Si岛的边缘部分的寄生晶体管。 薄膜半导体器件使用设置在绝缘基板上的薄膜半导体形成，并且包括用于形成漏极电流流过的沟道区域的栅极区域。 栅极区域在绝缘基板上具有平面的环形形状。 高浓度杂质掺杂区被分割地设置在环形栅极区域的内部和外部，并且沟道区域由多个扇形半导体单晶部分形成。

公开(公告)号：US07309900B2

公开(公告)日：2007-12-18

申请号：US11085111

申请日：2005-03-22

申请人： Fumiki Nakano ,  Genshiro Kawachi ,  Yoshiaki Nakazaki ,  Shinzo Tsuboi ,  Takahiko Endo ,  Tomoya Kato

发明人： Fumiki Nakano ,  Genshiro Kawachi ,  Yoshiaki Nakazaki ,  Shinzo Tsuboi ,  Takahiko Endo ,  Tomoya Kato

IPC分类号： H01L29/76

CPC分类号： H01L27/1296 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78696

摘要： There is provided a thin-film transistor that is formed on an insulating substrate, is capable of a high-speed operation, has small non-uniformity among devices, is hardly susceptible to device destruction due to high voltage, and is free from the effect of a parasitic transistor that forms at an edge part of an Si island. The thin-film semiconductor device is formed using a thin-film semiconductor provided on the insulating substrate and includes a gate region for formation of a channel region through which a drain current flows. The gate region has a ring shape in plan on the insulating substrate. High concentration impurity-doped regions are dividedly provided on an inside and an outside of the ring-shaped gate region, and the channel region is formed of a plurality of fan-shaped semiconductor single-crystal portions.

摘要翻译： 提供一种薄膜晶体管，其形成在绝缘基板上，能够进行高速运转，器件之间的不均匀性较小，几乎不易受高电压造成的器件破坏，并且不受影响 形成在Si岛的边缘部分的寄生晶体管。 薄膜半导体器件使用设置在绝缘基板上的薄膜半导体形成，并且包括用于形成漏极电流流过的沟道区域的栅极区域。 栅极区域在绝缘基板上具有平面的环形形状。 高浓度杂质掺杂区被分割地设置在环形栅极区域的内部和外部，并且沟道区域由多个扇形半导体单晶部分形成。

公开(公告)号：US20070228469A1

公开(公告)日：2007-10-04

申请号：US11758217

申请日：2007-06-05

申请人： Fumiki Nakano ,  Genshiro Kawachi ,  Yoshiaki Nakazaki ,  Shinzo Tsuboi ,  Takahiko Endo ,  Tomoya Kato

发明人： Fumiki Nakano ,  Genshiro Kawachi ,  Yoshiaki Nakazaki ,  Shinzo Tsuboi ,  Takahiko Endo ,  Tomoya Kato

IPC分类号： H01L29/786 ,  H01L27/12

CPC分类号： H01L27/1296 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78696

摘要： There is provided a thin-film transistor that is formed on an insulating substrate, is capable of a high-speed operation, has small non-uniformity among devices, is hardly susceptible to device destruction due to high voltage, and is free from the effect of a parasitic transistor that forms at an edge part of an Si island. The thin-film semiconductor device is formed using a thin-film semiconductor provided on the insulating substrate and includes a gate region for formation of a channel region through which a drain current flows. The gate region has a ring shape in plan on the insulating substrate. High concentration impurity-doped regions are dividedly provided on an inside and an outside of the ring-shaped gate region, and the channel region is formed of a plurality of fan-shaped semiconductor single-crystal portions.

摘要翻译： 提供一种薄膜晶体管，其形成在绝缘基板上，能够进行高速运转，器件之间的不均匀性较小，几乎不易受高电压造成的器件破坏，并且不受影响 形成在Si岛的边缘部分的寄生晶体管。 薄膜半导体器件使用设置在绝缘基板上的薄膜半导体形成，并且包括用于形成漏极电流流过的沟道区域的栅极区域。 栅极区域在绝缘基板上具有平面的环形形状。 高浓度杂质掺杂区被分割地设置在环形栅极区域的内部和外部，并且沟道区域由多个扇形半导体单晶部分形成。

公开(公告)号：US20070063228A1

公开(公告)日：2007-03-22

申请号：US11432387

申请日：2006-05-12

申请人： Tomoya Kato ,  Masakiyo Matsumura ,  Yoshiaki Nakazaki

发明人： Tomoya Kato ,  Masakiyo Matsumura ,  Yoshiaki Nakazaki

IPC分类号： H01L27/148 ,  H01L29/768 ,  H01L29/74

CPC分类号： H01L29/78621 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78675 ,  H01L29/78678

摘要： An object of the present invention is to provide a thin film transistor having a high mobility and having fewer fluctuations in the mobility or threshold voltage characteristics. A non-single-crystal semiconductor thin film having a thickness of less than 50 nm and disposed on an insulating substrate is irradiated with laser light having an inverse-peak-patterned light intensity distribution to grow crystals unidirectionally in a lateral direction. Thus, band-like crystal grains having a dimension in a crystal growth direction, which is longer than a width, are arranged adjacent to each other in a width direction to form a crystal grain array. A source region and a drain region of a TFT are formed so that a current flows in the crystal growth direction in an area including a plurality of crystal grains of this crystal grain array.

摘要翻译： 本发明的目的是提供一种具有高迁移率并具有较少的迁移率或阈值电压特性波动的薄膜晶体管。 用具有反峰图案的光强度分布的激光照射厚度小于50nm并且设置在绝缘基板上的非单晶半导体薄膜，以在横向上单向生长晶体。 因此，具有长于宽度的晶体生长方向的尺寸的带状晶粒沿宽度方向彼此相邻地布置以形成晶粒阵列。 形成TFT的源极区域和漏极区域，使得电流在包含该晶体阵列的多个晶粒的区域中的晶体生长方向上流动。

公开(公告)号：US07335910B2

公开(公告)日：2008-02-26

申请号：US11432387

申请日：2006-05-12

申请人： Tomoya Kato ,  Masakiyo Matsumura ,  Yoshiaki Nakazaki

发明人： Tomoya Kato ,  Masakiyo Matsumura ,  Yoshiaki Nakazaki

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/036 ,  H01L31/0376 ,  H01L29/00

CPC分类号： H01L29/78621 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78675 ,  H01L29/78678

摘要： An object of the present invention is to provide a thin film transistor having a high mobility and having fewer fluctuations in the mobility or threshold voltage characteristics. A non-single-crystal semiconductor thin film having a thickness of less than 50 nm and disposed on an insulating substrate is irradiated with laser light having an inverse-peak-patterned light intensity distribution to grow crystals unidirectionally in a lateral direction. Thus, band-like crystal grains having a dimension in a crystal growth direction, which is longer than a width, are arranged adjacent to each other in a width direction to form a crystal grain array. A source region and a drain region of a TFT are formed so that a current flows in the crystal growth direction in an area including a plurality of crystal grains of this crystal grain array.

摘要翻译： 本发明的目的是提供一种具有高迁移率并具有较少的迁移率或阈值电压特性波动的薄膜晶体管。 用具有反峰图案的光强度分布的激光照射厚度小于50nm并且设置在绝缘基板上的非单晶半导体薄膜，以在横向上单向生长晶体。 因此，具有长于宽度的晶体生长方向的尺寸的带状晶粒沿宽度方向彼此相邻地布置以形成晶粒阵列。 形成TFT的源极区域和漏极区域，使得电流在包含该晶体阵列的多个晶粒的区域中的晶体生长方向上流动。

公开(公告)号：US20070001949A1

公开(公告)日：2007-01-04

申请号：US11514759

申请日：2006-09-01

申请人： Yoshiaki Nakazaki

发明人： Yoshiaki Nakazaki

IPC分类号： G09G3/36

CPC分类号： H01L27/1214 ,  G02F1/136204 ,  G09G5/006 ,  H01L2924/0002 ,  H01L2924/00

摘要： An input-output (I/O) protective circuit having more stable I/O protective function for use in the liquid crystal display device and including in one embodiment a resistance provided between an I/O terminal pad and an I/O primary stage thin film transistor, a wiring connecting the I/O terminal pad with the resistance, and two I/O protective thin film transistors connected in series between a ground terminal and a power source terminal. The above wiring is connected with each joint portion of the two I/O protective thin film transistors and, each of the two I/O protective thin film transistors has p-type substrate potential fixing terminals and n-type substrate potential fixing terminals, which are connected with each of the channel layers of the I/O protective thin film transistors, and p-type substrate potential fixing terminals and n-type substrate potential fixing terminals are connected with the ground terminals.

摘要翻译： 一种输入输出（I / O）保护电路，其具有用于液晶显示装置的更稳定的I / O保护功能，并且在一个实施例中包括在I / O端子焊盘和I / O初级薄层之间提供的电阻 薄膜晶体管，将I / O端子焊盘与电阻连接的布线以及串联在接地端子和电源端子之间的两个I / O保护薄膜晶体管。 上述布线与两个I / O保护薄膜晶体管的每个接合部分连接，并且两个I / O保护薄膜晶体管中的每一个具有p型衬底电位固定端子和n型衬底电势固定端子，其中 与I / O保护薄膜晶体管的每个沟道层连接，p型衬底电位固定端子和n型衬底电位固定端子与接地端子连接。