公开(公告)号：US5614733A

公开(公告)日：1997-03-25

申请号：US354502

申请日：1994-12-12

申请人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura

IPC分类号： G02F1/1362 ,  H01L21/20 ,  H01L21/77 ,  H01L21/84 ,  H01L29/76 ,  H01L31/036 ,  H01L31/112

CPC分类号： H01L27/1277 ,  G02F1/13454 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02686

摘要： A semiconductor device has a first thin film transistor and a second thin film transistor formed on a substrate. Both of the first and second thin film transistor have a crystallized channel region. One of the first and second thin film transistor is doped with a catalyst metal at a sufficient concentration for promoting the crystallization of the channel region which the other of the first and second thin film transistors is not doped with the catalyst metal.

摘要翻译： 半导体器件具有形成在衬底上的第一薄膜晶体管和第二薄膜晶体管。 第一和第二薄膜晶体管都具有晶化的沟道区。 第一和第二薄膜晶体管之一以足够的浓度掺杂有催化剂金属，以促进第一和第二薄膜晶体管中的另一个不掺杂催化剂金属的沟道区的结晶。

公开(公告)号：US06875628B1

公开(公告)日：2005-04-05

申请号：US08811742

申请日：1997-03-06

申请人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga

发明人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga

IPC分类号： H01L21/20 ,  H01L21/77 ,  H01L21/84 ,  H01L21/00

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/2022 ,  H01L27/1214 ,  H01L27/1277

摘要： Nickel is introduced to a predetermined region of a peripheral circuit section, other than a picture element section, on an amorphous silicon film to crystallize from that region. After forming gate electrodes and others, sources, drains and channels are formed by doping impurities, and laser is irradiated to improve the crystallization. After that, electrodes/wires are formed. Thereby an active matrix type liquid crystal display whose thin film transistors (TFT) in the peripheral circuit section are composed of the crystalline silicon film whose crystal is grown in the direction parallel to the flow of carriers and whose TFTs in the picture element section are composed of the amorphous silicon film can be obtained.

摘要翻译： 在非晶硅膜上将镍引入除了像素部分之外的外围电路部分的预定区域以从该区域结晶。 在形成栅电极等之后，通过掺杂杂质形成源极，漏极和沟道，照射激光以改善结晶。 之后，形成电极/电线。 由此，外围电路部的薄膜晶体管（TFT）由结晶硅晶体构成的有源矩阵型液晶显示器，晶体硅膜的晶体沿平行于载流子的方向生长，并且其像素部分中的TFT构成 的非晶硅膜。

公开(公告)号：US06756657B1

公开(公告)日：2004-06-29

申请号：US09238579

申请日：1999-01-28

申请人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Hisashi Ohtani ,  Junichi Takeyama

发明人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Hisashi Ohtani ,  Junichi Takeyama

IPC分类号： H01L31036

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02675 ,  H01L21/2026 ,  H01L29/78675

摘要： A semiconductor device is disclosed. The semiconductor device has a crystalline silicon film as an active layer region. The crystalline silicon film has needle-like or columnar crystals oriented parallel to the substrate and having a crystal growth direction of (111) axis. A method for preparing the semiconductor device comprises steps of adding a catalytic element to an amorphous silicon film; and heating the amorphous silicon film containing the catalytic element at a low temperature to crystallize the silicon film.

摘要翻译： 公开了一种半导体器件。 半导体器件具有作为有源层区域的晶体硅膜。 结晶硅膜具有平行于衬底并具有（111）轴的晶体生长方向的针状或柱状晶体。 制备半导体器件的方法包括以下步骤：向非晶硅膜添加催化元素; 并在低温下加热含有催化元素的非晶硅膜以使硅膜结晶。

公开(公告)号：US6037610A

公开(公告)日：2000-03-14

申请号：US41516

申请日：1998-03-13

申请人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Hisashi Ohtani

发明人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Hisashi Ohtani

IPC分类号： H01L21/20 ,  H01L29/786 ,  H01L29/04

CPC分类号： H01L21/2022 ,  H01L29/78675

摘要： A semiconductor device having high carrier mobility, which comprises a substrate provided thereon a base film and further thereon a crystalline non-single crystal silicon film by crystal growth, wherein, the crystals are grown along the crystallographic [110] axis, and source/drain regions are provided approximately along the direction of carrier movement which coincides to the direction of crystal growth. Moreover, the electric conductivity along this direction of crystal growth is higher than any in other directions.

公开(公告)号：US5646424A

公开(公告)日：1997-07-08

申请号：US477941

申请日：1995-06-07

申请人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/265 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L29/36 ,  H01L29/49 ,  H01L29/772 ,  H01L29/78 ,  H01L29/786 ,  H01L29/76 ,  H01L29/04 ,  H01L27/01

CPC分类号： H01L21/26506 ,  H01L21/02532 ,  H01L21/02672 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78675 ,  H01L29/78678

摘要： A thin film transistor includes a crystallized amorphous silicon film having a gate insulating film and a gate electrode formed thereon. The device includes impurities implanted in a self-aligned manner and a catalyst that accelerates the crystallization of the silicon film. The catalyst is introduced in the silicon film by adhering a coating containing the catalyst element and annealing the resulting structure at a temperature lower than the deformation temperature of the substrate to activate the doped impurities. The catalyst element can also be incorporated into the silicon film by means of ion implantation and the like. Also disclosed is a thin film transistor, which comprises a gate electrode, a gate insulating film, an amorphous silicon film having impurities implanted therein to form source and drain regions as the impurity regions, and a catalyst element introduced into the impurity regions by adhering a coating containing the catalyst element or by means of ion doping and the like, wherein the resulting structure is annealed at a temperature lower than the deformation temperature of the substrate to activate the doped impurities.

摘要翻译： 薄膜晶体管包括具有形成在其上的栅绝缘膜和栅电极的结晶非晶硅膜。 该装置包括以自对准方式注入的杂质和加速硅膜结晶的催化剂。 将催化剂通过粘附含有催化剂元素的涂层并在低于基板的变形温度的温度下退火所得结构而引入到硅膜中，以激活掺杂的杂质。 催化剂元件也可以通过离子注入等并入硅膜中。 还公开了一种薄膜晶体管，其包括栅极，栅极绝缘膜，注入杂质的非晶硅膜，以形成源极和漏极区域作为杂质区域;以及催化剂元件，通过粘附到杂质区域 包含催化剂元素的涂层或通过离子掺杂等方法，其中所得结构在低于衬底的变形温度的温度下退火以活化掺杂的杂质。

公开(公告)号：US5624851A

公开(公告)日：1997-04-29

申请号：US207173

申请日：1994-03-08

申请人： Toru Takayama ,  Hongyong Zhang ,  Yasuhiko Takemura

发明人： Toru Takayama ,  Hongyong Zhang ,  Yasuhiko Takemura

IPC分类号： H01L21/20 ,  H01L21/77 ,  H01L21/84 ,  H01L21/322 ,  H01L21/324 ,  H01L21/336

CPC分类号： H01L21/2022 ,  H01L27/1214 ,  H01L27/1229 ,  H01L27/1277

摘要： A semiconductor circuit and a process for fabricating the same, said process comprising forming in contact with an amorphous silicon film, a substance containing a catalytic element; crystallizing selected portions of the amorphous silicon film by annealing said film at a temperature lower than the ordinary crystallization temperature of an amorphous silicon film; and then crystallizing the rest of the portions by irradiating thereto laser beam or an intense light having an intensity equivalent thereto. A process similar to the one above, wherein, the catalytic element is incorporated directly into the amorphous silicon film instead of bringing a substance containing the same into contact with the amorphous silicon film.

摘要翻译： 一种半导体电路及其制造方法，所述方法包括与非晶硅膜接触，含有催化元素的物质; 通过在比非晶硅膜的普通结晶温度低的温度下对所述膜进行退火，使非晶硅膜的选定部分结晶; 然后通过向其上照射激光束或具有与其强度相当的强度的光来结晶其余部分。 类似于上述方法的方法，其中催化元素直接并入非晶硅膜中，而不是使含有该催化剂的物质与非晶硅膜接触。

公开(公告)号：US5604360A

公开(公告)日：1997-02-18

申请号：US248220

申请日：1994-05-24

申请人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga

发明人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/04 ,  H01L31/036 ,  H01L31/112 ,  H01L27/01

CPC分类号： H01L27/1214 ,  H01L21/2022 ,  H01L29/66757 ,  G09G2300/0408

摘要： Nickel is introduced to a predetermined region of a peripheral circuit section, other than a picture element section, on an amorphous silicon film to crystallize from that region. After forming gate electrodes and others, sources, drains and channels are formed by doping impurities, and laser is irradiated to improve the crystallization. After that, electrodes/wires are formed. Thereby an active matrix type liquid crystal display whose thin film transistors (TFT) in the peripheral circuit section are composed of the crystalline silicon film whose crystal is grown in the direction parallel to the flow of carriers and whose TFTs in the picture element section are composed of the amorphous silicon film can be obtained.

摘要翻译： 在非晶硅膜上将镍引入除了像素部分之外的外围电路部分的预定区域以从该区域结晶。 在形成栅电极等之后，通过掺杂杂质形成源极，漏极和沟道，照射激光以改善结晶。 之后，形成电极/电线。 由此，外围电路部的薄膜晶体管（TFT）由结晶硅晶体构成的有源矩阵型液晶显示器，晶体硅膜的晶体沿平行于载流子的方向生长，并且其像素部分中的TFT构成 的非晶硅膜。

公开(公告)号：US06979840B1

公开(公告)日：2005-12-27

申请号：US08223823

申请日：1994-04-06

申请人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Akira Mase ,  Hideki Uochi

发明人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Akira Mase ,  Hideki Uochi

IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/13 ,  H01L29/04

CPC分类号： H01L29/66757 ,  H01L27/1255

摘要： A thin-film semiconductor device or integrated circuit comprising an insulating substrate, TFTs (thin-film transistors) formed on the substrate, and multilayer conductive interconnections. The circuit has a first metallization layer becoming gate electrodes and gate interconnections. The surface of the first metallization layer is oxidized by anodic oxidation to form an insulating coating on the surface of the first metallization layer. A second metallization layer becoming source and drain electrodes or conductive interconnections is then formed on the insulating coating directly or via an interlayer insulator. An improvement in the production yield and improved reliability are accomplished.

摘要翻译： 包括绝缘基板，形成在基板上的TFT（薄膜晶体管）和多层导电互连的薄膜半导体器件或集成电路。 该电路具有成为栅电极和栅极互连的第一金属化层。 通过阳极氧化将第一金属化层的表面氧化，以在第一金属化层的表面上形成绝缘涂层。 然后在绝缘涂层上直接或经由层间绝缘体形成成为源极和漏电极或导电互连的第二金属化层。 实现了产量的提高和可靠性的提高。

公开(公告)号：US5716871A

公开(公告)日：1998-02-10

申请号：US117709

申请日：1993-09-08

申请人： Shunpei Yamazaki ,  Akira Mase ,  Hideki Uochi ,  Yasuhiko Takemura

发明人： Shunpei Yamazaki ,  Akira Mase ,  Hideki Uochi ,  Yasuhiko Takemura

IPC分类号： G02F1/1362 ,  H01L21/336 ,  H01L27/12 ,  H01L29/49 ,  H01L29/786 ,  H01L21/44

CPC分类号： H01L29/66757 ,  H01L27/12 ,  H01L29/4908 ,  H01L29/78666 ,  H01L29/78675 ,  G02F1/13454 ,  G02F2001/136245

摘要： A semiconductor device or a semiconductor integrated circuit includes a field effect transistor having a source region, a drain region and a channel regions formed within a semiconductor substrate. A lower wiring is formed on the semiconductor substrate to form a gate electrode and its extension and oxidized to form an oxide film covering the lower wiring. An upper wiring is formed over the lower wiring on the semiconductor substrate to make contact with the drain or source region. The lower wiring is electrically insulated from the upper wiring by the oxide film.

摘要翻译： 半导体器件或半导体集成电路包括具有源极区，漏极区和形成在半导体衬底内的沟道区的场效应晶体管。 在半导体基板上形成下布线以形成栅电极，并且其延伸部被氧化以形成覆盖下布线的氧化膜。 在半导体衬底上的下布线之上形成上布线以与漏区或源区接触。 下布线通过氧化膜与上布线电绝缘。

公开(公告)号：US6028326A

公开(公告)日：2000-02-22

申请号：US881257

申请日：1997-06-24

申请人： Hideki Uochi ,  Yasuhiko Takemura

发明人： Hideki Uochi ,  Yasuhiko Takemura

IPC分类号： H01L21/265 ,  H01L21/20 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786 ,  H01L29/76 ,  H01L31/036 ,  H01L31/112 ,  H01L31/0376

CPC分类号： H01L29/66757 ,  H01L21/2022 ,  H01L29/78621 ,  H01L27/1277

摘要： A crystalline silicon thin film transistor having an LDD (lightly doped drain) structure and a process for fabricating the same, which comprises introducing a catalyst element for accelerating crystallization at a concentration of 1.times.10.sup.15 cm.sup.-3 or more but less than 2.times.10.sup.19 cm.sup.-3 to the impurity region in an amorphous silicon film, crystallizing the amorphous film thereafter, and after forming gate electrode and gate insulating film, implanting an impurity in a self-aligned manner to establish an LDD structure.

摘要翻译： 一种具有LDD（轻掺杂漏极）结构的晶体硅薄膜晶体管及其制造方法，其特征在于，将1×10 15 cm -3以上且小于2×10 19 cm -3的浓度促进结晶的催化剂元件引入到 非晶硅膜中的杂质区域，然后使非晶膜结晶，并且在形成栅电极和栅绝缘膜之后，以自对准的方式注入杂质以建立LDD结构。