公开(公告)号：US20060011951A1

公开(公告)日：2006-01-19

申请号：US10891569

申请日：2004-07-15

申请人： Shen-Kan Hsiung ,  Jung-Chuan Chou ,  Tai-Ping Sun ,  Chung-We Pan ,  I-Kone Kao

发明人： Shen-Kan Hsiung ,  Jung-Chuan Chou ,  Tai-Ping Sun ,  Chung-We Pan ,  I-Kone Kao

IPC分类号： H01L29/80 ,  H01L21/8238

CPC分类号： G01N27/414

摘要： A potassium/sodium ion sensing device applying an extended-gate field effect transistor, which using an extended-gate ion sensitive field effect transistor (EGFET) as base to fabricate a potassium/sodium ion sensing device, using the extended gate of the extended-gate ion sensitive field effect transistor as a signal intercept electrode, and immobilizing the hydro-aliphatic urethane diacrylate (EB2001) intermixed with electronegative additive, potassium ionophore, sodium ionophore, and the like, to fabricate a potassium/sodium ion sensing electrode. The present invention utilizes the photocurability and good hydrophilicity of the hydro-aliphatic urethane diacrylate (EB2001), and fixes potassium/sodium ionophore, can obtain a non-wave filter, single-layer, stable signal potassium and sodium ion sensor. Thus, when the present invention is applied to measure the concentration of potassium/sodium ions in a sample, the mutual interference between potassium/sodium ion electrodes can be reduced, so the measured value can be more close to the actual value.

摘要翻译： 一种使用扩展栅极离子敏感场效应晶体管（EGFET）作为基极的扩展栅极场效应晶体管的钾/钠离子感测装置，使用扩展栅极场效应晶体管的扩展栅极， 栅极离子敏感场效应晶体管作为信号截距电极，并将与负电性添加剂，钾离子载体，钠离子载体等混合的氢 - 脂族氨基甲酸酯二丙烯酸酯（EB2001）固定，制造钾/钠离子感测电极。 本发明利用了水解脂肪族聚氨酯二丙烯酸酯（EB2001）的光固化性和亲水性，并且固定了钾/钠离子载体，可以得到非波长的过滤器，单层，稳定的信号钾离子和钠离子传感器。 因此，当本发明用于测量样品中钾/钠离子的浓度时，可以减少钾离子/钠离子电极之间的相互干扰，因此测量值可以更接近实际值。

公开(公告)号：US06974716B2

公开(公告)日：2005-12-13

申请号：US10802907

申请日：2004-03-17

申请人： Stephen S. K. Hsiung ,  Jung-Chuan Chou ,  Tai-Ping Sun ,  Wen-Yaw Chung ,  Yuan-Lung Chin ,  Lei Zhen Ce

发明人： Stephen S. K. Hsiung ,  Jung-Chuan Chou ,  Tai-Ping Sun ,  Wen-Yaw Chung ,  Yuan-Lung Chin ,  Lei Zhen Ce

IPC分类号： G01N27/414 ,  H01L21/00 ,  H01L21/203 ,  H01L29/772

CPC分类号： G01N27/414

摘要： A method for fabricating a titanium nitride (TiN) sensing membrane on an extended gate field effect transistor (EGFET). The method comprises the steps of depositing a layer of aluminum on a gate terminal of the EGFET using thermal evaporation and forming the TiN sensing membrane on an exposed part of the layer of aluminum in the sensitive window as an ion sensitive sensor (pH sensor) using a radio frequency (RF) sputtering process. Because TiN is suitable for use in a standard CMOS process, all the elements in the sensing device can be mass produced and offer the benefits of low cost, high yield, and high performance.

摘要翻译： 在扩展栅场效应晶体管（EGFET）上制造氮化钛（TiN）感测膜的方法。 该方法包括以下步骤：使用热蒸发在EGFET的栅极端子上沉积铝层，并在敏感窗口中的铝层的暴露部分上形成TiN感测膜，作为离子敏感传感器（pH传感器），使用 射频（RF）溅射工艺。 由于TiN适用于标准CMOS工艺，因此可以大量生产传感器件中的所有元件，并提供低成本，高产量和高性能的优点。

公开(公告)号：US20050147741A1

公开(公告)日：2005-07-07

申请号：US10750073

申请日：2003-12-31

申请人： Shen-Kan Hsiung ,  Jung-Chuan Chou ,  Tai-Ping Sun ,  Chung-We Pan ,  Jing-Sheng Chiang

发明人： Shen-Kan Hsiung ,  Jung-Chuan Chou ,  Tai-Ping Sun ,  Chung-We Pan ,  Jing-Sheng Chiang

IPC分类号： H01L21/00

CPC分类号： G01N27/4148

摘要： A method for fabricating an array pH sensor and a readout circuit device of such array pH sensor are implemented by utilizing an extended ion sensitive field effect transistor to construct the array pH sensor and related readout circuit. The structure of the array sensor having this extended ion sensitive field effect transistor comprises a tin dioxide/metal/silicon dioxide multi-layer structure sensor and a tin dioxide/indium tin oxide/glass multi-layer structure sensor and has excellent properties. Furthermore, the readout circuit and the sensor utilize two signal generators for controlling and reading signals. In particular, the sensor can be effective for increasing the accuracy of measurement and reducing the interference of noise.

摘要翻译： 通过利用扩展的离子敏感场效应晶体管构成阵列pH传感器和相关读出电路来实现阵列pH传感器的制造方法和这种阵列pH传感器的读出电路装置。 具有该扩展离子敏感场效应晶体管的阵列传感器的结构包括二氧化锡/金属/二氧化硅多层结构传感器和二氧化锡/铟锡氧化物/玻璃多层结构传感器，并且具有优异的性能。 此外，读出电路和传感器利用两个信号发生器来控制和读取信号。 特别地，传感器可以有效地提高测量的精度并降低噪声的干扰。

公开(公告)号：US20050147736A1

公开(公告)日：2005-07-07

申请号：US10750072

申请日：2003-12-31

申请人： Shen-Kan Hsiung ,  Jung-Chuan Chou ,  Tai-Ping Sun ,  Chung-We Pan

发明人： Shen-Kan Hsiung ,  Jung-Chuan Chou ,  Tai-Ping Sun ,  Chung-We Pan

IPC分类号： A61L2/00 ,  B05D5/12 ,  G01N27/333 ,  G01N27/403

CPC分类号： G01N27/4035 ,  G01N27/3335

摘要： A process for fabricating a whole solid-state pH sensing device by using the polypyrrole as the contrast pH detector and a whole solid-state pH sensing device fabricated by the process are disclosed, wherein said device is a differential pair framework potential electrochemical sensing device fabricated by using a non-insulating solid-state inorganic ion-sensing membrane and a polypyrrole sensing membrane. The largest difference between the device of the present invention and the conventional potentiometric type pH sensor is that the sensor of the invention is a solid-state planar sensor. The differential pair framework uses tin dioxide as the ion-sensing membrane and the reference electrode, and uses a polypyrrole sensor as the differential sensor, wherein the sensitivity of tin dioxide is good and has a value up to 57 mV/pH, and the sensitivity of polypyrrole is about 27 mV/pH. These lead the sensitivity of the whole solid-state pH Sensing device to a value of 30 mV/pH and exhibits good linearity, so that the sensing device framework has practicability. Since the sensitivity of the polypyrrole can be controlled by means of its polymerization, a sensing device with controllable sensitivity can be fabricated for applying to the fabrication of a pH sensor or a biosensor.

摘要翻译： 公开了一种通过使用聚吡咯作为对比pH检测器和通过该方法制造的整个固态pH感测装置来制造整个固态pH感测装置的方法，其中所述装置是制造的差分对框架电位电化学感测装置 通过使用非绝缘固态无机离子感测膜和聚吡咯感测膜。 本发明装置与常规电位式pH传感器之间的最大差异在于本发明的传感器是固态平面传感器。 差分对框架使用二氧化锡作为离子感测膜和参比电极，并使用聚吡咯传感器作为差示传感器，其中二氧化锡的灵敏度良好，并且具有高达57mV / pH的值，灵敏度 的聚吡咯约为27mV / pH。 这些将整个固态pH传感装置的灵敏度提高到30 mV / pH值，呈现出良好的线性度，使感应装置框架具有实用性。 由于可以通过其聚合来控制聚吡咯的灵敏度，因此可以制造具有可控感光度的感测装置，用于制造pH传感器或生物传感器。

公开(公告)号：US20050139490A1

公开(公告)日：2005-06-30

申请号：US11023506

申请日：2004-12-29

申请人： Jung-Chuan Chou ,  Shin-Cheng Chang

发明人： Jung-Chuan Chou ,  Shin-Cheng Chang

IPC分类号： G01N27/414 ,  G01N33/00 ,  G01F1/64 ,  G01N17/04

CPC分类号： G01N27/414 ,  Y10T436/145555 ,  Y10T436/17

摘要： An alkaloid sensor, systems comprising the same, and measurement using the systems. The alkaloid sensor has an extended gate field effect transistor (EGFET) structure and comprises a metal oxide semiconductor field effect transistor (MOSFET) on a semiconductor substrate, a sensing unit comprising a substrate, a tin oxide film on the substrate, and a alkaloid acylase film immobilized on the tin oxide film, and a conductive wire connecting the MOSFET and the sensing unit.

摘要翻译： 生物碱传感器，包括其的系统和使用该系统的测量。 生物碱传感器具有延伸的栅极场效应晶体管（EGFET）结构，并且在半导体衬底上包括金属氧化物半导体场效应晶体管（MOSFET），感测单元包括衬底，衬底上的氧化锡膜和生物碱酰基转移酶 固定在氧化锡膜上的膜和连接MOSFET和感测单元的导线。

公开(公告)号：US20050040487A1

公开(公告)日：2005-02-24

申请号：US10950579

申请日：2004-09-28

申请人： Jung-Chuan Chou ,  Hsuan-Ming Tsai

发明人： Jung-Chuan Chou ,  Hsuan-Ming Tsai

IPC分类号： G01N27/00 ,  G01N27/414 ,  G01R27/00 ,  G01R31/02 ,  H01L21/00 ,  H01L21/04 ,  H01L21/66 ,  H01L23/58 ,  H01L27/14 ,  H01L29/772 ,  H01L31/00

CPC分类号： H01L29/66045 ,  G01N27/414 ,  H01L2924/0002 ,  H01L2924/00

摘要： An a-C:H ISFET device and manufacturing method thereof. The present invention prepares a-C:H as the detection membrane of an ISFET by plasma enhanced low pressure chemical vapor deposition (PE-LPCVD) to obtain an a-C:H ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the a-C:H ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rates of the a-C:H ISFET for different pH and hysteresis width of the a-C:H ISFET for different pH loops are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the a-C:H ISFET.

摘要翻译： 一种a-C：H ISFET器件及其制造方法。 本发明通过等离子体增强低压化学气相沉积（PE-LPCVD）制备a-C：H作为ISFET的检测膜，以获得a-C：H ISFET。 本发明还通过电流测量系统测量不同pH和温度的电流 - 电压曲线。 a-C：H ISFET的温度参数根据电流 - 电压曲线和温度之间的关系计算。 此外，aC：H ISFET对于不同pH环路的aC：H ISFET的不同pH和滞后宽度的漂移率由恒定电压/电流电路和电压 - 时间记录仪计算，以测量 aC：H ISFET。

公开(公告)号：US06806116B2

公开(公告)日：2004-10-19

申请号：US10811801

申请日：2004-03-30

申请人： Jung-Chuan Chou ,  Yii Fang Wang

发明人： Jung-Chuan Chou ,  Yii Fang Wang

IPC分类号： H01L2100

CPC分类号： G01N27/414 ,  H01L2924/0002 ,  H01L2924/00

摘要： A SnO2 ISFET device and manufacturing method thereof. The present invention prepares SnO2 as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2 ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the SnO2 ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rate of the SnO2 ISFET for different pH and hysteresis width of the SnO2 ISFET for different pH loop are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the SnO2 ISFET.

摘要翻译： SnO2 ISFET器件及其制造方法。 本发明通过溶胶 - 凝胶技术制备了SnO2作为ISFET的检测膜，以获得SnO2 ISFET。 本发明还通过电流测量系统测量不同pH和温度的电流 - 电压曲线。 SnO2 ISFET的温度参数根据电流 - 电压曲线和温度之间的关系计算。 此外，SnO2 ISFET对于不同pH环路的SnO2 ISFET的不同pH和滞后宽度的漂移速率由恒定电压/电流电路和电压时间记录仪计算，以测量SnO2 ISFET的栅极电压。

公开(公告)号：US06236075B1

公开(公告)日：2001-05-22

申请号：US09266420

申请日：1999-03-10

申请人： Shen-Kan Hsiung ,  Jung-Chuan Chou ,  Tai-Ping Sun ,  Wen Yaw Chung ,  Hung-Kwei Liao ,  Chung-Lin Wu

发明人： Shen-Kan Hsiung ,  Jung-Chuan Chou ,  Tai-Ping Sun ,  Wen Yaw Chung ,  Hung-Kwei Liao ,  Chung-Lin Wu

IPC分类号： H01L2358

CPC分类号： G01N27/414

摘要： The present invention discloses a method of forming a metal layer by thermal evaporation or RF reactive sputtering in order to fabricate a light shielding layer for an ion sensitive field effect transistor. The multi-layered construction of the ion sensitive field effect transistor with a metal thin film as a light shielding layer is SnO2/metal/SiO2 or SnO2/metal/Si3N4/SiO2, and is able to lower the effect of light successfully.

摘要翻译： 本发明公开了一种通过热蒸镀或RF反应溅射形成金属层的方法，以制造用于离子敏感场效应晶体管的遮光层。 具有金属薄膜作为遮光层的离子敏感场效应晶体管的多层结构是SnO 2 /金属/ SiO 2或SnO 2 /金属/ Si 3 N 4 / SiO 2，并且能够成功地降低光的效果。