公开(公告)号：US20100232088A1

公开(公告)日：2010-09-16

申请号：US12597408

申请日：2008-03-31

申请人： Hiroaki Fujita ,  Kazuhiko Kimura ,  Masatoshi Iemura ,  Masashi Ozawa ,  Makoto Ashiura ,  Tetsuji Kawazura

发明人： Hiroaki Fujita ,  Kazuhiko Kimura ,  Masatoshi Iemura ,  Masashi Ozawa ,  Makoto Ashiura ,  Tetsuji Kawazura

IPC分类号： H01G9/10 ,  C08F236/10 ,  C08L9/00 ,  C08K3/34 ,  C08K3/36 ,  C08K3/04

CPC分类号： C08F255/10 ,  C08F8/02 ,  C08F8/30 ,  C08F8/42 ,  C08F2810/10 ,  C08F2810/20 ,  C08F2810/30 ,  H01G9/10 ,  C08F210/12

摘要： An electrolytic capacitor sealer capable of fulfilling the requirement such as long-term heat resistance without risk of reversion due to crosslinking with an organic peroxide and an electrolytic capacitor using such a sealer are provided.A sealer is formed of a modified butyl rubber composition obtained by using an organic peroxide to crosslink a modified butyl rubber composition which has been modified by reacting butyl rubber with a compound (a) having in the molecule a nitroxide free radical that is stable at room temperature even in the presence of oxygen, a radical initiator (b), and a bifunctional or higher radical polymerizable monomer (c), and of a modified butyl rubber composition obtained by compounding a radical polymerizable monomer (c) with a modified butyl rubber composition that has been obtained by reacting butyl rubber with a compound (a) having in the molecule a nitroxide free radical that is stable at room temperature even in the presence of oxygen and a radical initiator (b), and then crosslinking the composition thus obtained with an organic peroxide.

摘要翻译： 提供一种电解电容器封口机，其能够满足诸如长期耐热性的要求，而不会由于与有机过氧化物的交联而导致的回复风险以及使用这种密封剂的电解电容器。 通过使用有机过氧化物使改性丁基橡胶组合物交联改性的丁基橡胶组合物形成密封剂，所述改性丁基橡胶组合物通过使丁基橡胶与分子中具有在室内稳定的氮氧自由基的化合物（a）反应而改性 即使在存在氧的情况下，自由基引发剂（b）和双功能或更高级自由基聚合性单体（c），也可以是将自由基聚合性单体（c）与改性丁基橡胶组合物 通过使丁基橡胶与分子中具有在氧气和自由基引发剂（b）的存在下在室温下稳定的氮氧自由基的化合物（a）反应获得的，然后将由此获得的组合物与 有机过氧化物。

公开(公告)号：US07582503B2

公开(公告)日：2009-09-01

申请号：US11973237

申请日：2007-10-05

申请人： Takashi Abe ,  Nobuo Nakamura ,  Keiji Mabuchi ,  Tomoyuki Umeda ,  Hiroaki Fujita ,  Eiichi Funatsu ,  Hiroki Sato

发明人： Takashi Abe ,  Nobuo Nakamura ,  Keiji Mabuchi ,  Tomoyuki Umeda ,  Hiroaki Fujita ,  Eiichi Funatsu ,  Hiroki Sato

IPC分类号： H01L21/00

CPC分类号： H01L27/14643 ,  H01L23/544 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02162 ,  H01L31/0232 ,  H01L31/02327 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

摘要翻译： 形成背照式CMOS图像传感器包括在形成有源区或栅电极期间在硅衬底的布线侧上形成配准标记的工艺。 使用活性区域的硅化物膜也可以用于配准标记。 此后，通过使用红光或近红外线从背面读取对准标记，并且完成步进机的配准。 也可以在背面（照明侧）的氧化硅膜上形成配准标记，与配线侧的配准标记对准，并且通过使用由此形成的配准标记来实现所需的配准。

公开(公告)号：US07521278B2

公开(公告)日：2009-04-21

申请号：US11550137

申请日：2006-10-17

申请人： Hiroaki Fujita

发明人： Hiroaki Fujita

IPC分类号： H01L21/308 ,  H01L21/339

CPC分类号： H01L27/14683 ,  H01L27/1463

摘要： A method for forming the passivation layer for silicon-isolation interface between photosensitive regions of an image sensor, the method includes providing a substrate having a plurality of spaced apart photosensitive regions that collect charge in response to incident light; etching trenches in the substrate between the photosensitive regions; forming a plurality of masks over the photosensitive regions so that trenches between the photosensitive regions are not covered by the masks; implanting the image sensor with a first low dose to passivate the trenches; filling the trenches with a dielectric to form isolation between the photosensitive regions; forming a plurality of masks which cover the photosensitive regions but does not cover a surface corner of the isolation trench to permit passivation implantation at the surface corner of the trench isolation; and implanting the image sensor at a second low dose to passivate the surface corner of trenched isolation region.

摘要翻译： 一种形成用于图像传感器的感光区域之间的硅隔离界面的钝化层的方法，所述方法包括提供具有响应于入射光收集电荷的多个间隔开的光敏区域的基板; 蚀刻感光区域之间的衬底中的沟槽; 在感光区域上形成多个掩模，使得感光区域之间的沟槽不被掩模覆盖; 以第一低剂量植入图像传感器以钝化沟槽; 用电介质填充沟槽以在感光区域之间形成隔离; 形成覆盖感光区域但不覆盖隔离沟槽的表面角的多个掩模，以允许在沟槽隔离的表面角处进行钝化注入; 以及将图像传感器植入第二低剂量以钝化沟槽隔离区域的表面角。

公开(公告)号：US07515185B2

公开(公告)日：2009-04-07

申请号：US10509977

申请日：2003-04-04

申请人： Nobuo Nakamura ,  Tomoyuki Umeda ,  Keiji Mabuchi ,  Hiroaki Fujita ,  Takashi Abe ,  Eiichi Funatsu ,  Hiroki Sato

发明人： Nobuo Nakamura ,  Tomoyuki Umeda ,  Keiji Mabuchi ,  Hiroaki Fujita ,  Takashi Abe ,  Eiichi Funatsu ,  Hiroki Sato

IPC分类号： H04N5/335 ,  H01L27/148

CPC分类号： H04N5/3597 ,  H04N5/3698 ,  H04N5/3741

摘要： A solid-state imaging device for enlarging an operating margin of a pixel portion and achieving complete transfer of a signal charge by using a plurality of power supply voltages, wherein a plurality of power supplies having different power supply voltage values are supplied to portions of a semiconductor chip 1. For example, as a first power supply system, a first digital power supply voltage (DVDD1) is supplied from a power supply terminal 45, a first digital ground voltage (DVSS1) is supplied from a power supply terminal 46, a second digital power supply voltage (DVDD2) is supplied from a power supply terminal 47, a second digital ground voltage (DVSS2) is supplied from a power supply terminal 48, a third digital power supply (DVDD3) is supplied from a power supply terminal 49, and a third digital ground voltage (DVSS3) is supplied from a power supply terminal 50, and as a second power supply system, a first analog power supply voltage (AVDD1) is supplied from a power supply terminal 40, a first analog ground voltage (AVSS1) is supplied from a power supply terminal 41, a second analog power supply voltage (AVDD2) is supplied from a power supply terminal 42, and a second analog ground voltage (AVSS2) is supplied from a power supply terminal 43.

摘要翻译： 一种固态成像装置，用于放大像素部分的工作裕度并通过使用多个电源电压实现信号电荷的完全传送，其中具有不同电源电压值的多个电源被提供给 半导体芯片1.例如，作为第一电源系统，从电源端子45供给第一数字电源电压（DVDD1），从电源端子46供给第一数字接地电压（DVSS1） 从电源端子47供给第二数字电源电压（DVDD2），从电源端子48供给第二数字接地电压（DVSS2），从电源端子49供给第三数字电源（DVDD3） ，并且从电源端子50提供第三数字接地电压（DVSS3），作为第二电源系统，从电源端子提供第一模拟电源电压（AVDD1） 如图40所示，从电源端子41提供第一模拟地电压（AVSS1），从电源端子42提供第二模拟电源电压（AVDD2），从第二模拟电源电压（AVSS2）供给第二模拟接地电压 电源端子43。

公开(公告)号：US20080102554A1

公开(公告)日：2008-05-01

申请号：US11973237

申请日：2007-10-05

申请人： Takashi Abe ,  Nobuo Nakamura ,  Keiji Mabuchi ,  Tomoyuki Umeda ,  Hiroaki Fujita ,  Eiichi Funatsu ,  Hiroki Sato

发明人： Takashi Abe ,  Nobuo Nakamura ,  Keiji Mabuchi ,  Tomoyuki Umeda ,  Hiroaki Fujita ,  Eiichi Funatsu ,  Hiroki Sato

IPC分类号： H01L31/18

CPC分类号： H01L27/14643 ,  H01L23/544 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02162 ,  H01L31/0232 ,  H01L31/02327 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

摘要翻译： 形成背照式CMOS图像传感器包括在形成有源区或栅电极期间在硅衬底的布线侧上形成配准标记的工艺。 使用活性区域的硅化物膜也可以用于配准标记。 此后，通过使用红光或近红外线从背面读取对准标记，并且完成步进机的配准。 也可以在背面（照明侧）的氧化硅膜上形成配准标记，与配线侧的配准标记对准，并且通过使用由此形成的配准标记来实现所需的配准。

公开(公告)号：US20080042175A1

公开(公告)日：2008-02-21

申请号：US11973562

申请日：2007-10-09

申请人： Takashi Abe ,  Nobuo Nakamura ,  Keiji Mabuchi ,  Tomoyuki Umeda ,  Hiroaki Fujita ,  Eiichi Funatsu ,  Hiroki Sato

发明人： Takashi Abe ,  Nobuo Nakamura ,  Keiji Mabuchi ,  Tomoyuki Umeda ,  Hiroaki Fujita ,  Eiichi Funatsu ,  Hiroki Sato

IPC分类号： H01L31/0232 ,  H01L27/146

CPC分类号： H01L27/14643 ,  H01L23/544 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02162 ,  H01L31/0232 ,  H01L31/02327 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

公开(公告)号：US20070221881A1

公开(公告)日：2007-09-27

申请号：US11723147

申请日：2007-03-16

申请人： Atsuko Fujita ,  Hiroaki Fujita ,  Norikatsu Hattori

发明人： Atsuko Fujita ,  Hiroaki Fujita ,  Norikatsu Hattori

IPC分类号： C09K19/34 ,  C09K19/32 ,  C09K19/30 ,  C09K19/12

CPC分类号： C09K19/3402 ,  C09K19/42 ,  C09K2019/0407 ,  C09K2019/0411 ,  C09K2019/123 ,  C09K2019/3004 ,  C09K2019/3009 ,  C09K2019/301 ,  C09K2019/3016 ,  C09K2019/3425 ,  Y10T428/10

摘要： A liquid crystal composition having a negative dielectric anisotropy and including a first component, which is a liquid crystal compound having a chroman ring, in which two hydrogens are replaced by fluorine, a second component, which is a liquid crystal compound having phenylene in which two hydrogens are replaced by fluorine and chlorine, and a particular third component, and a liquid crystal display device including the liquid crystal composition.

摘要翻译： 具有负介电各向异性的液晶组合物，并且包括作为具有苯并二氢吡喃环的液晶化合物的第一组分，其中两个氢被氟取代，第二组分是具有亚苯基的液晶化合物，其中两个 氢被氟和氯代替，特别是第三组分，以及包括该液晶组合物的液晶显示装置。

公开(公告)号：US20060203113A1

公开(公告)日：2006-09-14

申请号：US10545740

申请日：2004-02-20

申请人： Takamasa Wada ,  Eiichi Funatsu ,  Keiji Mabuchi ,  Ken Nakajima ,  Katsuaki Hirota ,  Nobuyuki Satou ,  Takashi Abe ,  Tomoyuki Umeda ,  Nobuo Nakamura ,  Hiroaki Fujita ,  Hiroki Sato

发明人： Takamasa Wada ,  Eiichi Funatsu ,  Keiji Mabuchi ,  Ken Nakajima ,  Katsuaki Hirota ,  Nobuyuki Satou ,  Takashi Abe ,  Tomoyuki Umeda ,  Nobuo Nakamura ,  Hiroaki Fujita ,  Hiroki Sato

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H04N9/045 ,  H04N5/3456 ,  H04N5/3458 ,  H04N5/347 ,  H04N5/374

摘要： When pixels are simply skipped while keeping both an order of pixel information and a spatial positional relation the same as those in all-pixel readout, since a distance between pixels to be read out increases, the Nyquist frequency decreases and aliasing noise increases. A 5×5 pixel block is set as a unit pixel block and pieces of pixel information in first, third, and fifth columns of first, third, and fifth rows of a pixel arrangement are added and outputted as an output in an ath row and an ath column of the unit pixel block. Then, pieces of pixel information in sixth, eighth, and tenth columns of the first, the third, and the fifth rows of the pixel arrangement are added and outputted as an output in the ath row and a bth column of the unit pixel block. Subsequently, pieces of pixel information are added and outputted up to a last column or a column near the last column. Thereafter, pieces of pixel information in the first, the third, and the fifth columns of the sixth, the eighth, and the tenth rows of the pixel arrangement are added and outputted as an output in a bth row and the ath column of the unit pixel block. Subsequently, all arbitrary pixels are read out while repeating the same operation and skipping and adding pieces of pixel information.

摘要翻译： 当像素被简单地跳过同时保持像素信息的顺序和空间位置关系与全像素读出中的顺序相同时，由于要读出的像素之间的距离增加，所以奈奎斯特频率降低并且混叠噪声增加。 将5×5像素块设置为单位像素块，并且将像素布置的第一，第三和第五行的第一，第三和第五列中的像素信息的像素信息相加并输出为运动行中的输出，并且运动 单位像素块的列。 然后，将像素配置的第一，第三和第五行的第六列，第八列和第五列中的像素信息的像素信息相加并输出为单位像素块的运动行和第b列中的输出。 随后，将像素信息添加并输出到最后一列或靠近最​​后一列的列。 此后，将像素配置的第六行，第八行和第十行的第一列，第三列和第五列中的像素信息相加并输出为第b行的输出和单元的运动列 像素块。 随后，在重复相同的操作并跳过和添加像素信息的同时读出所有任意像素。

公开(公告)号：US20060118764A1

公开(公告)日：2006-06-08

申请号：US11293121

申请日：2005-12-05

申请人： Hiroaki Fujita ,  Norikatsu Hattori

发明人： Hiroaki Fujita ,  Norikatsu Hattori

IPC分类号： C09K19/30 ,  C09K19/52 ,  C09K19/12

CPC分类号： C09K19/3048 ,  C09K19/3001 ,  C09K19/3003 ,  C09K19/3028 ,  C09K19/3066 ,  C09K2019/0407 ,  C09K2019/3027 ,  Y10T428/10

摘要： A liquid crystal composition comprising as a first component at least two compounds selected from the group of compounds represented by formula (1), and having a negative dielectric anisotropy: wherein R1 is independently alkyl having 1 to 10 carbons or alkenyl having 2 to 10 carbons; R2 is independently alkyl having 1 to 10 carbons, alkenyl having 2 to 10 carbons, or alkoxy having 1 to 9 carbons; Z1 is independently a single bond, —C2H4—, —CH2O—, or —CH═CH—; ring A is independently 1,4-cyclohexylene or 1,4-phenylene; and n is independently 0 or 1.

摘要翻译： 一种液晶组合物，其包含作为第一组分的至少两种选自式（1）表示的化合物的化合物，并具有负的介电各向异性：其中R 1独立地为具有1至10个的烷基 具有2至10个碳的碳或烯基; R 2独立地为具有1至10个碳的烷基，具有2至10个碳的烯基或具有1至9个碳的烷氧基; Z 1是独立的单键，-C 2 H 4 - ， - CH 2 O - 或 - -CH-CH-; 环A独立地为1,4-亚环己基或1,4-亚苯基; 且n独立地为0或1。

公开(公告)号：US20050224758A1

公开(公告)日：2005-10-13

申请号：US11101567

申请日：2005-04-08

申请人： Hitoshi Yamamoto ,  Yasuyuki Sasada ,  Hiroaki Fujita

发明人： Hitoshi Yamamoto ,  Yasuyuki Sasada ,  Hiroaki Fujita

IPC分类号： C09K19/12 ,  C09K19/20 ,  C09K19/30 ,  C09K19/42 ,  C09K19/52

CPC分类号： C09K19/20 ,  C09K19/3066 ,  C09K19/42 ,  C09K2019/047 ,  Y10T428/10

摘要： The present invention is to provide such a liquid crystal composition that satisfies plural characteristic features selected from a wide temperature range of a nematic phase, a low viscosity, an appropriate optical anisotropy, a large negative dielectric anisotropy and a large specific resistance. The liquid crystal composition of the invention contains, as a first component, at least one compound selected from the group consisting of compounds represented by Formula (1-1) to (1-4); contains, as a second component, at least one compound selected from the group consisting of compounds represented by Formula (2-1) to (2-3); and has a negative dielectric anisotropy. In the following formulae, all the symbols are defined in claim 1.

摘要翻译： 本发明提供这样的液晶组合物，其满足从向列相的宽温度范围，低粘度，适当的光学各向异性，大的负介电各向异性和大电阻率等选择的多种特征。 本发明的液晶组合物含有选自由式（1-1）〜（1-4）表示的化合物的至少一种化合物作为第一成分; 含有作为第二成分的至少一种选自由式（2-1）〜（2-3）表示的化合物的化合物; 并具有负介电各向异性。 在下列公式中，所有符号在权利要求1中定义。