公开(公告)号：US20120018771A1

公开(公告)日：2012-01-26

申请号：US13246894

申请日：2011-09-28

申请人： Shunpei YAMAZAKI ,  Kengo Akimoto

发明人： Shunpei YAMAZAKI ,  Kengo Akimoto

IPC分类号： H01L33/42 ,  H01L27/15

CPC分类号： H01L51/5206 ,  H01L27/3244 ,  H01L51/0037 ,  H01L51/0052 ,  H01L51/007 ,  H01L51/0071 ,  H01L51/0077 ,  H01L51/0081 ,  H01L51/5048

摘要： It is an object of the present invention to provide a semiconductor device, in particular, a light emitting element which can be easily manufactured with a wet method. One feature of the invention is a light emitting device including a transistor and a light emitting element. In the light emitting element, an organic layer, a light emitting layer, and a second electrode are sequentially formed over a first electrode, and the transistor is electrically connected to the light emitting element through a wiring. Here, the wiring contains aluminum, carbon, and titanium. The organic layer is formed by a wet method. The first electrode which is in contact with the organic layer is formed from indium tin oxide containing titanium oxide.

摘要翻译： 本发明的目的是提供一种半导体器件，特别是可以容易地以湿法制造的发光元件。 本发明的一个特征是包括晶体管和发光元件的发光器件。 在发光元件中，在第一电极上顺序地形成有机层，发光层和第二电极，并且晶体管通过布线电连接到发光元件。 这里，布线包含铝，碳和钛。 有机层通过湿法形成。 与有机层接触的第一电极由含氧化钛的氧化铟锡形成。

公开(公告)号：US08043796B2

公开(公告)日：2011-10-25

申请号：US11957884

申请日：2007-12-17

申请人： Kengo Akimoto

发明人： Kengo Akimoto

IPC分类号： G03F7/26

CPC分类号： H01L27/1266 ,  G02F2001/136295 ,  H01L21/263 ,  H01L21/76802 ,  H01L21/76838 ,  H01L27/1214

摘要： A light absorption layer is formed over a substrate, the light absorption layer is selectively irradiated with a laser beam, and a region of the light absorption layer, which is irradiated with the laser beam, is removed. By adding an impurity element imparting one conductivity type or an inert element to a remaining part of the light absorption layer, a tensile stress of the light absorption layer is made lower than that before irradiation with the laser beam.

摘要翻译： 在基板上形成光吸收层，用激光束选择性地照射光吸收层，去除照射激光的光吸收层的区域。 通过向光吸收层的剩余部分添加赋予一种导电型或惰性元素的杂质元素，使得光吸收层的拉伸应力低于用激光束照射之前的拉伸应力。

公开(公告)号：US08034646B2

公开(公告)日：2011-10-11

申请号：US12486785

申请日：2009-06-18

申请人： Shunpei Yamazaki ,  Kengo Akimoto

发明人： Shunpei Yamazaki ,  Kengo Akimoto

IPC分类号： H01L21/00

CPC分类号： H01L51/5206 ,  H01L27/3244 ,  H01L51/0037 ,  H01L51/0052 ,  H01L51/007 ,  H01L51/0071 ,  H01L51/0077 ,  H01L51/0081 ,  H01L51/5048

摘要： It is an object of the present invention to provide a semiconductor device, in particular, a light emitting element which can be easily manufactured with a wet method. One feature of the invention is a light emitting device including a transistor and a light emitting element. In the light emitting element, an organic layer, a light emitting layer, and a second electrode are sequentially formed over a first electrode, and the transistor is electrically connected to the light emitting element through a wiring. Here, the wiring contains aluminum, carbon, and titanium. The organic layer is formed by a wet method. The first electrode which is in contact with the organic layer is formed from indium tin oxide containing titanium oxide.

摘要翻译： 本发明的目的是提供一种半导体器件，特别是可以容易地以湿法制造的发光元件。 本发明的一个特征是包括晶体管和发光元件的发光器件。 在发光元件中，在第一电极上顺序地形成有机层，发光层和第二电极，并且晶体管通过布线电连接到发光元件。 这里，布线包含铝，碳和钛。 有机层通过湿法形成。 与有机层接触的第一电极由含氧化钛的氧化铟锡形成。

公开(公告)号：US07989815B2

公开(公告)日：2011-08-02

申请号：US12571552

申请日：2009-10-01

申请人： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

发明人： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

IPC分类号： H01L29/04

CPC分类号： H01L29/7869 ,  H01L27/0266 ,  H01L27/1225 ,  H01L27/124

摘要： The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first wiring layer and a second wiring layer which are over the gate insulating film and whose end portions overlap with the gate electrode; and an oxide semiconductor layer which is over the gate electrode and in contact with the gate insulating film and the end portions of the first wiring layer and the second wiring layer. The gate electrode of the non-linear element and a scan line or a signal line is included in a wiring, the first or second wiring layer of the non-linear element is directly connected to the wiring so as to apply the potential of the gate electrode.

摘要翻译： 保护电路使用非线性元件形成，该非线性元件包括覆盖栅电极的栅极绝缘膜; 第一布线层和第二布线层，其在栅极绝缘膜上方并且其端部与栅电极重叠; 以及氧化物半导体层，其在所述栅电极的上方并与所述栅极绝缘膜和所述第一布线层和所述第二布线层的端部接触。 非线性元件的栅电极和扫描线或信号线包括在布线中，非线性元件的第一或第二布线层直接连接到布线，以施加栅极的电位 电极。

公开(公告)号：US20110165740A1

公开(公告)日：2011-07-07

申请号：US13050002

申请日：2011-03-17

申请人： Toru Takayama ,  Kengo Akimoto

发明人： Toru Takayama ,  Kengo Akimoto

IPC分类号： H01L21/336 ,  H01L21/20

CPC分类号： H01L21/3105 ,  H01L21/31604 ,  H01L21/32055 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78696

摘要： An object is to provide a semiconductor device including a microcrystalline semiconductor film with favorable quality and a method for manufacturing the semiconductor device. In a thin film transistor formed using a microcrystalline semiconductor film, yttria-stabilized zirconia having a fluorite structure is formed in the uppermost layer of a gate insulating film in order to improve quality of a microcrystalline semiconductor film to be formed in the initial stage of deposition. The microcrystalline semiconductor film is deposited on the yttria-stabilized zirconia, so that the microcrystalline semiconductor film around an interface with a base particularly has favorable crystallinity while by crystallinity of the base.

摘要翻译： 目的在于提供一种具有质量好的微晶半导体膜的半导体装置及其制造方法。 在使用微晶半导体膜形成的薄膜晶体管中，在栅极绝缘膜的最上层形成具有萤石结构的氧化钇稳定的氧化锆，以提高在初始沉积时形成的微晶半导体膜的质量 。 微晶半导体膜沉积在氧化钇稳定的氧化锆上，使得与碱的界面周围的微晶半导体膜特别具有良好的结晶度，同时通过碱的结晶度。

公开(公告)号：US07951689B2

公开(公告)日：2011-05-31

申请号：US12232131

申请日：2008-09-11

申请人： Kengo Akimoto ,  Yuta Endo

发明人： Kengo Akimoto ,  Yuta Endo

IPC分类号： H01L21/46

CPC分类号： H01L21/76254

摘要： A highly reliable semiconductor device capable of high speed operation is manufactured over a flexible substrate at a high yield. A separation layer is formed over an insulating substrate by a sputtering method; the separation layer is flattened by a reverse sputtering method; an insulating film is formed over the flattened separation layer; a damaged area is formed by introducing hydrogen or the like into a semiconductor substrate; an insulating film is formed over the semiconductor substrate in which the damaged area is formed; the insulating film formed over the insulating substrate is bonded to the insulating film formed over the semiconductor substrate, the semiconductor substrate is separated at the damaged area so that a semiconductor layer is formed over the insulating substrate; the semiconductor layer is flattened so as to form an SOI substrate; and the semiconductor device is formed over the SOI substrate.

摘要翻译： 以高产率在柔性基板上制造能够进行高速运转的高度可靠的半导体装置。 通过溅射法在绝缘基板上形成分离层; 分离层通过反溅射法平坦化; 在平坦化的分离层上形成绝缘膜; 通过将氢等引入到半导体衬底中形成损伤区域; 在形成有损坏区域的半导体基板上形成绝缘膜; 形成在绝缘基板上的绝缘膜与半导体衬底上形成的绝缘膜接合，半导体衬底在损坏区域分离，从而在绝缘衬底上形成半导体层; 半导体层被平坦化以形成SOI衬底; 并且半导体器件形成在SOI衬底上。

公开(公告)号：US20110121290A1

公开(公告)日：2011-05-26

申请号：US13011128

申请日：2011-01-21

申请人： Kengo Akimoto ,  Tatsuya Honda ,  Norihito Sone

发明人： Kengo Akimoto ,  Tatsuya Honda ,  Norihito Sone

IPC分类号： H01L29/786

CPC分类号： H01L29/78696 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02266 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/428 ,  H01L21/465 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/045 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

摘要： An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

公开(公告)号：US20110104851A1

公开(公告)日：2011-05-05

申请号：US12950300

申请日：2010-11-19

申请人： Kengo Akimoto ,  Tatsuya Honda ,  Norihito Sone

发明人： Kengo Akimoto ,  Tatsuya Honda ,  Norihito Sone

IPC分类号： H01L21/36

CPC分类号： H01L29/78696 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02266 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/428 ,  H01L21/465 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/045 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

摘要： An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

摘要翻译： 本发明的目的是提供一种半导体器件，其制造工艺不复杂并且可以通过以氧化锌为代表的氧化物半导体膜形成薄膜晶体管来制造成本。 对于半导体器件，在基板上形成栅电极; 形成覆盖栅电极的栅极绝缘膜; 在栅绝缘膜上形成氧化物半导体膜; 并且在氧化物半导体膜上形成第一导电膜和第二导电膜。 氧化物半导体膜在沟道区域中至少具有结晶化区域。

公开(公告)号：US20110079777A1

公开(公告)日：2011-04-07

申请号：US12893513

申请日：2010-09-29

申请人： Kengo Akimoto

发明人： Kengo Akimoto

IPC分类号： H01L29/12 ,  H01L21/16

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78603

摘要： An object is to provide a method for manufacturing a highly reliable semiconductor device which includes a thin film transistor using an oxide semiconductor and having stable electric characteristics. In manufacture of a semiconductor device in which an oxide semiconductor is used for a channel formation region, after an oxide semiconductor film is formed, a conductive film including a metal, a metal compound, or an alloy that can absorb or adsorb moisture, a hydroxy group, or hydrogen is formed to overlap with the oxide semiconductor film with an insulating film provided therebetween. Then, heat treatment is performed in the state where the conductive film is exposed; in such a manner, activation treatment for removing moisture, oxygen, hydrogen, or the like adsorbed onto a surface of or in the conductive film is performed.

摘要翻译： 本发明的目的是提供一种用于制造高可靠性的半导体器件的方法，该半导体器件包括使用氧化物半导体并具有稳定的电特性的薄膜晶体管。 在使用氧化物半导体用于沟道形成区域的半导体器件的制造中，在形成氧化物半导体膜之后，可以使用能够吸收或吸附水分的金属，金属化合物或合金的导电膜，羟基 组或氢形成为与氧化物半导体膜重叠，其间设置有绝缘膜。 然后，在导电膜露出的状态下进行热处理; 以这种方式，执行吸附在导电膜表面上或导电膜中的水分，氧气，氢气等的活化处理。

公开(公告)号：US20110057918A1

公开(公告)日：2011-03-10

申请号：US12872861

申请日：2010-08-31

申请人： Hajime Kimura ,  Kengo Akimoto ,  Masashi Tsubuku ,  Toshinari Sasaki

发明人： Hajime Kimura ,  Kengo Akimoto ,  Masashi Tsubuku ,  Toshinari Sasaki

IPC分类号： G09G5/00

CPC分类号： H01L29/78693 ,  G09G3/3648 ,  G09G2300/0842 ,  H01L27/1225 ,  H01L29/78618

摘要： A display device including a pixel having a memory. The pixel includes at least a display element, a capacitor, an inverter, and a switch. The switch is controlled with a signal held in the capacitor and a signal output from the inverter so that voltage is supplied to the display element. The inverter and the switch can be constituted by transistors with the same polarity. A semiconductor layer included in the pixel may be formed using a light-transmitting material. Moreover, a gate electrode, a drain electrode, and a capacitor electrode may be formed using a light-transmitting conductive layer. The pixel is formed using a light-transmitting material in such a manner, whereby the display device can be a transmissive display device while including a pixel having a memory.

摘要翻译： 一种显示装置，包括具有存储器的像素。 像素至少包括显示元件，电容器，反相器和开关。 开关由保持在电容器中的信号和从逆变器输出的信号控制，使得电压被提供给显示元件。 逆变器和开关可以由具有相同极性的晶体管构成。 可以使用透光材料形成包括在像素中的半导体层。 此外，可以使用透光导电层来形成栅电极，漏电极和电容器电极。 以这种方式使用透光材料形成像素，由此显示装置可以是包括具有存储器的像素的透射显示装置。