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    Data processing apparatus for controlling access to a memory
    92.
    发明申请
    Data processing apparatus for controlling access to a memory 有权
    用于控制对存储器的访问的数据处理装置

    公开(公告)号：US20080040530A1

    公开(公告)日：2008-02-14

    申请号：US11882855

    申请日：2007-08-06

    申请人： Kenichi Takeda

    发明人： Kenichi Takeda

    IPC分类号： G06F13/36

    CPC分类号： G06F13/28

    摘要： A data processing apparatus contains a first bus connected to a first memory, a first central processing unit (CPU) being accessible to the first memory via the first bus, a first Direct Memory Access (DMA) controller being accessible to the first memory via the first bus, and a monitor circuit connected to the first bus and monitoring addresses transferred on the first bus. The addresses transferred on the first bus are transmitted from the first DMA controller to the first memory via the first bus. The monitor circuit compares the address transferred on the first bus with a preset monitor target address. The CPU acquires the comparison results by the monitor circuit. If the comparison results show an address match, then the CPU accesses the first memory. The CPU can in this way access the first memory at a correct timing.

    摘要翻译： 数据处理装置包括连接到第一存储器的第一总线，经由第一总线可访问第一存储器的第一中央处理单元（CPU），经由第一存储器可访问的第一直接存储器存取（DMA）控制器， 第一总线，以及连接到第一总线的监视电路和监视在第一总线上传送的地址。 在第一总线上传送的地址通过第一总线从第一DMA控制器发送到第一存储器。 监视器电路将第一总线上传送的地址与预设的监视目标地址进行比较。 CPU通过监视电路获取比较结果。 如果比较结果显示地址匹配，则CPU访问第一个内存。 CPU可以以这种方式在正确的时机访问第一个内存。

    MANUFACTURING METHOD FOR PIEZOELECTRIC BODY, PIEZOELECTRIC ELEMENT, AND LIQUID DISCHARGE HEAD
    93.
    发明申请
    MANUFACTURING METHOD FOR PIEZOELECTRIC BODY, PIEZOELECTRIC ELEMENT, AND LIQUID DISCHARGE HEAD 有权
    压电体，压电元件和液体放电头的制造方法

    公开(公告)号：US20080012909A1

    公开(公告)日：2008-01-17

    申请号：US11773009

    申请日：2007-07-03

    申请人： Takanori MATSUDA ,  Kenichi Takeda ,  Katsumi Aoki ,  Toshihiro Ifuku

    发明人： Takanori MATSUDA ,  Kenichi Takeda ,  Katsumi Aoki ,  Toshihiro Ifuku

    IPC分类号： B41J2/295 ,  H01L41/08 ,  H01L41/22

    CPC分类号： B41J2/14233 ,  B41J2/161 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2/1646 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/314 ,  Y10T29/42

    摘要： A method of manufacturing a piezoelectric body, formed from a film made of an ABO3 perovskite oxide crystal epitaxially grown on a substrate, comprises forming a film containing an AOx crystal by using an oxide containing an A element and a B element by heating the substrate to a temperature which is equal to or higher than a temperature at which the AOx crystal is formed, and which is lower than a temperature at which the ABO3 perovskite oxide crystal is formed and changing the film containing the AOx crystal into a film made of the ABO3 perovskite oxide crystal by heating the substrate to a temperature which exceeds a temperature at which the AOx crystal can be present, and which is equal to or higher than a temperature at which the ABO3 perovskite oxide crystal is formed.

    摘要翻译： 制造由在衬底上外延生长的由ABO 3钙钛矿氧化物晶体制成的膜形成的压电体的方法包括通过以下步骤形成包含AO xS晶体的膜： 使用含有A元素和B元素的氧化物，通过将基板加热到等于或高于形成AO xS晶体的温度，并且低于温度 在其上形成ABO 3钙钛矿氧化物晶体，并将含有AO 结晶的膜改变为由ABO 3钙钛矿氧化物制成的膜 通过将衬底加热到​​超过可能存在AO xS晶体的温度的温度，并且其等于或高于ABO 3 形成了钙钛矿型氧化物晶体。

    Polishing method
    94.
    发明授权
    Polishing method 有权
    抛光方法

    公开(公告)号：US07279425B2

    公开(公告)日：2007-10-09

    申请号：US11581375

    申请日：2006-10-17

    申请人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

    发明人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

    IPC分类号： H01L21/302

    CPC分类号： C23F3/06 ,  B24B37/04 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/7684

    摘要： A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items such as slurries and polishing pads is reduced. A metal film formed on an insulating film comprising a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.

    摘要翻译： 抑制了划痕，剥离，凹陷和侵蚀的抛光技术，不需要复杂的清洁工艺和浆料供应/加工设备，并且消耗品如浆料和抛光垫的成本降低。 在包含凹槽的绝缘膜上形成的金属膜用含有氧化剂和使氧化物溶于水但不含抛光磨料的物质的抛光溶液抛光。

    Flow sensor
    96.
    发明申请
    Flow sensor 有权
    流量传感器

    公开(公告)号：US20070056366A1

    公开(公告)日：2007-03-15

    申请号：US11330969

    申请日：2006-01-13

    申请人： Noriyuki Sakuma ,  Naoki Yamamoto ,  Kenichi Takeda ,  Hiroshi Fukuda

    发明人： Noriyuki Sakuma ,  Naoki Yamamoto ,  Kenichi Takeda ,  Hiroshi Fukuda

    IPC分类号： G01F1/68

    CPC分类号： G01F1/6845 ,  G01F1/699 ,  G01P5/10

    摘要： The present invention provides a technology capable of achieving a highly-sensitive flow sensor, by forming a metal film having a relatively high TCR on a semiconductor substrate via an insulating film. A measurement device which is a thermal fluid flow sensor includes a heat element, resistance temperature detectors (upstream-side resistance temperature detector and downstream-side resistance temperature detector), and a resistance temperature detector for air which are all formed of a first metal film. The first metal film is formed of an α-Ta film having a resistivity lower than three times the resistivity of a Ta ingot and obtained by deposition through sputtering on an amorphous film containing metal.

    摘要翻译： 本发明提供一种能够通过在绝缘膜上在半导体衬底上形成具有较高TCR的金属膜来实现高灵敏度的流量传感器的技术。 作为热流体流量传感器的测量装置包括热元件，电阻温度检测器（上游侧电阻温度检测器和下游侧电阻温度检测器）以及空气的电阻温度检测器，全部由第一金属膜 。 第一金属膜由具有低于Ta锭的电阻率的三倍的α-Ta膜形成，并且通过溅射沉积在含有金属的非晶膜上而获得。

    Dielectric film structure, piezoelectric actuator using dielectric element film structure and ink jet head
    97.
    发明申请
    Dielectric film structure, piezoelectric actuator using dielectric element film structure and ink jet head 有权
    电介质膜结构，使用电介质膜结构的压电致动器和喷墨头

    公开(公告)号：US20060176342A1

    公开(公告)日：2006-08-10

    申请号：US11338774

    申请日：2006-01-25

    申请人： Hiroshi Aoto ,  Kenichi Takeda ,  Tetsuro Fukui ,  Toshihiro Ifuku

    发明人： Hiroshi Aoto ,  Kenichi Takeda ,  Tetsuro Fukui ,  Toshihiro Ifuku

    IPC分类号： B41J2/045

    CPC分类号： B41J2/14233 ,  H01L41/0973 ,  H01L41/316

    摘要： The present invention provides a dielectric film structure having a substrate and a dielectric film provided on the substrate and in which the dielectric film has (001) face orientation with respect to the substrate, and in which a value u in the following equation (1) regarding the dielectric film is a real number greater than 2: u=(Cc/Ca)×(Wa/Wc)  (1) where, Cc is a count number of a peak of a (001′) face of the dielectric film in an Out-of-plane X ray diffraction measurement (here, l′ is a natural number selected so that Cc becomes maximum); Ca is a count number of a peak of a (h′00) face of the dielectric film in an In-plane X ray diffraction measurement (here, h′ is a natural number selected so that Cc becomes maximum); WC is a half-value width of a peak of the (001′) face of the dielectric film in an Out-of-plane rocking curve X ray diffraction measurement; and Wa is a half-value width of a peak of the (h′00) face of the dielectric film in an In-plane rocking curve X ray diffraction measurement.

    摘要翻译： 本发明提供了一种电介质膜结构，其具有设置在基板上的基板和电介质膜，并且其中电介质膜相对于基板具有（001）面取向，并且其中以下等式（1）中的值u， 关于电介质膜是大于2的实数：<？in-line-formula description =“In-line Formulas”end =“lead”？> u =（C C 其中C是在平面外X射线衍射测量中电介质膜的（001'）面的峰的计数（这里，l'是 选择的自然数使得C 变得最大）; 在平面X射线衍射测量中，电介质膜的（h'00）面的峰值的计数数（这里，h'是选择的自然数，使得C 变为最大）; WC是在平面外的摇摆曲线X射线衍射测定中的电介质膜的（001'）面的峰值的半值宽度; 并且W a a是在平面内的摇摆曲线X射线衍射测量中电介质膜的（h'00）面的峰值的半值宽度。

    Dielectric film structure, piezoelectric actuator using dielectric element film structure and ink jet head
    98.
    发明授权
    Dielectric film structure, piezoelectric actuator using dielectric element film structure and ink jet head 失效
    电介质膜结构，使用电介质膜结构的压电致动器和喷墨头

    公开(公告)号：US07059711B2

    公开(公告)日：2006-06-13

    申请号：US10769765

    申请日：2004-02-03

    申请人： Hiroshi Aoto ,  Kenichi Takeda ,  Tetsuro Fukui ,  Toshihiro Ifuku

    发明人： Hiroshi Aoto ,  Kenichi Takeda ,  Tetsuro Fukui ,  Toshihiro Ifuku

    IPC分类号： B41J2/045

    CPC分类号： B41J2/14233 ,  H01L41/0973 ,  H01L41/316

    摘要： The present invention provides a dielectric film structure having a substrate and a dielectric film provided on the substrate and in which the dielectric film has (001) face orientation with respect to the substrate, and in which a value u in the following equation (1) regarding the dielectric film is a real number greater than 2: u=(Cc/Ca)×(Wa/Wc)  (1) where, Cc is a count number of a peak of a (00l′) face of the dielectric film in an Out-of-plane X ray diffraction measurement (here, l′ is a natural number selected so that Cc becomes maximum); Ca is a count number of a peak of a (h′00) face of the dielectric film in an In-plane X ray diffraction measurement (here, h′ is a natural number selected so that Cc becomes maximum); Wc is a half-value width of a peak of the (00l′) face of the dielectric film in an Out-of-plane rocking curve X ray diffraction measurement; and Wa is a half-value width of a peak of the (h′00) face of the dielectric film in an In-plane rocking curve X ray diffraction measurement.

    摘要翻译： 本发明提供了一种电介质膜结构，其具有设置在基板上的基板和电介质膜，并且其中电介质膜相对于基板具有（001）面取向，并且其中以下等式（1）中的值u， 关于电介质膜是大于2的实数：<？in-line-formula description =“In-line Formulas”end =“lead”？> u =（C C 其中，C是在平面外X射线衍射测量中电介质膜的（001）面的峰值的计数（这里，l'是 选择的自然数使得C 变得最大）; 在平面X射线衍射测量中，电介质膜的（h'00）面的峰值的计数数（这里，h'是选择的自然数，使得C 变为最大）; 在平面外的摇摆曲线X射线衍射测量中，电介质薄膜的（001'）面的峰值的半值宽度是半值宽度; 并且W a a是在平面内的摇摆曲线X射线衍射测量中电介质膜的（h'00）面的峰值的半值宽度。